DATA SHEET. BF998; BF998R Silicon N-channel dual-gate MOS-FETs DISCRETE SEMICONDUCTORS

Transcription

1 DISCRETE SEMICONDUCTORS DATA SHEET Silicon N-channel dual-gate MOS-FETs Supersedes data of April 99 File under Discrete Semiconductors, SC7 996 Aug

2 FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to GHz. 4 3 g 2 d APPLICATIONS VHF and UHF applications with 2 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT43 or SOT43R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Top view Marking code: MOp. Fig. 2 MAM39 g Simplified outline (SOT43) and symbol; BF g 2 g s,b d PINNING PIN SYMBOL DESCRIPTION s, b source 2 d drain 3 g 2 gate 2 4 g gate Top view 2 Marking code: MOp. Fig.2 MAM4 Simplified outline (SOT43R) and symbol; BF998R. s,b QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V DS drain-source voltage 2 V I D drain current 3 ma P tot total power dissipation 2 mw y fs forward transfer admittance 24 ms C ig-s input capacitance at gate 2. pf C rs reverse transfer capacitance f = MHz 25 ff F noise figure f = 8 MHz db T j operating junction temperature 5 C 996 Aug 2

3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage 2 V I D drain current 3 ma ±I G gate current ma ±I G2 gate 2 current ma P tot total power dissipation; BF998 up to T amb =6 C; see Fig.3; note 2 mw up to T amb =5 C; see Fig.3; note 2 2 mw P tot total power dissipation; BF998R up to T amb =5 C; see Fig.4; note 2 mw T stg storage temperature C T j operating junction temperature 5 C Notes. Device mounted on a ceramic substrate, 8 mm mm.7 mm. 2. Device mounted on a printed-circuit board. MLA98 MGA2 2 2 P tot (2) () (mw) P tot (mw) 2 T amb ( oc) 2 T amb ( C) () Ceramic substrate. (2) Printed-circuit board. Fig.3 Power derating curves; BF998. Fig.4 Power derating curve; BF998R. 996 Aug 3

4 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air; BF998 note 46 K/W note 2 5 K/W R th j-a thermal resistance from junction to ambient in free air; BF998R note 5 K/W Notes. Device mounted on a ceramic substrate, 8 mm mm.7 mm. 2. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS T j =25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ±V (BR)G-SS gate -source breakdown voltage V G2-S =V DS = ; I G-SS = ± ma 6 2 V ±V (BR)G2-SS gate 2-source breakdown voltage V G-S =V DS = ; I G2-SS = ± ma 6 2 V V (P)G-S gate -source cut-off voltage V G2-S =4V; V DS =8V; I D =2µA 2. V V (P)G2-S gate 2-source cut-off voltage V G-S = ; V DS =8V; I D =2µA.5 V I DSS drain-source current V G2-S =4V; V DS =8V; V G-S = ; note 2 8 ma ±I G-SS gate cut-off current V G2-S =V DS = ; V G-S = ±5 V 5 na ±I G2-SS gate 2 cut-off current V G-S =V DS = ; V G2-S = ±5 V 5 na Note. Measured under pulse condition. DYNAMIC CHARACTERISTICS Common source; T amb =25 C; V DS =8V;V G2-S = 4 V; I D = ma. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT y fs forward transfer admittance f = khz 2 24 ms C ig-s input capacitance at gate f = MHz pf C ig2-s input capacitance at gate 2 f = MHz.2 pf C os output capacitance f = MHz.5 pf C rs reverse transfer capacitance f = MHz 25 ff F noise figure f = 2 MHz; G S = 2 ms; B S =B Sopt.6 db f = 8 MHz; G S = 3.3 ms; B S =B Sopt. db 996 Aug 4

5 24 handbook, I halfpage D (ma) 2 6 MGE83 V G-S =.4 V.3 V.2 V 24 handbook, I halfpage D (ma) 2 6 V G2-S = 4 V 3 V 2 V MGE85 V 2 8. V V. V.2 V 4.3 V.4 V.5 V V DS (V) V V G (V) V G2-S = 4 V; T amb =25 C. Fig.5 Output characteristics; typical values. V DS = 8 V; T amb =25 C. Fig.6 Transfer characteristics; typical values. 24 handbook, I halfpage D (ma) 2 6 MGE84 typ 3 y fs (ms) 24 8 MGE8 4 V 3 V 2 V V 2 8 min V G2-S = V.5 V V G (mv) I D (ma) V DS = 8 V; V G2-S = 4 V; T amb =25 C. V DS = 8 V; T amb =25 C. Fig.7 Drain current as a function of gate voltage; typical values. Fig.8 Forward transfer admittance as a function of drain current; typical values. 996 Aug 5

6 3 y fs (ms) 24 MGE82 V G2-S = 4 V.5 C os (pf).4 MGE8 3 V V.2 2 ma 6 V. ma 8 ma V V G (V) V DS (V) V DS = 8 V; T amb =25 C. V G2-S = 4 V; f = MHz; T amb =25 C. Fig.9 Forward transfer admittance as a function of gate voltage; typical values. Fig. Output capacitance as a function of drain-source voltage; typical values. 2.3 C is (pf) 2. MGE C is (pf) 2.3 MBH V G-S (V) V G2 S (V) V DS = 8 V; V G2-S = 4 V; f = MHz; T amb =25 C. Fig. Gate input capacitance as a function of gate -source voltage; typical values. V DS = 8 V; V G-S = V; f = MHz; T amb =25 C. Fig.2 Gate input capacitance as a function of gate 2-source voltage; typical values. 996 Aug 6

7 MGC466 3 MGC467 3 y is (ms) y rs (µs) ϕ rs (deg) b is 2 ϕ rs 2 y rs g is 2 2 f (MHz) 3 2 f (MHz) 3 V DS = 8 V; V G2-S = 4 V; I D = ma; T amb =25 C. Fig.3 Input admittance as a function of the frequency; typical values. V DS = 8 V; V G2-S = 4 V; I D = ma; T amb =25 C. Fig.4 Reverse transfer admittance and phase as a function of frequency; typical values. 2 MGC468 2 MGC469 y fs (ms) y fs ϕ fs (deg) y os (ms) b os ϕ fs g os 2 f (MHz) f (MHz) 3 V DS = 8 V; V G2-S = 4 V; I D = ma; T amb =25 C. Fig.5 Forward transfer admittance and phase as a function of frequency; typical values. V DS = 8 V; V G2-S = 4 V; I D = ma; T amb =25 C. Fig.6 Output admittance as a function of the frequency; typical values. 996 Aug 7

8 handbook, full pagewidth V agc V DD 47 µf 2 µh 47 kω.8 kω L2 5 Ω output 5 Ω input V DD C 5.5 pf 4 kω L 5 pf D BB45 33 kω 36 Ω pf D2 BB45 33 kω kω V tun input V tun output MGE82 V DD = 2 V; G S = 2 ms; G L =.5 ms. L = 45 nh; 4 turns.8 mm copper wire, internal diameter 4 mm. L2 = 6 nh; 3 turns.8 mm copper wire, internal diameter 8 mm. Tapped at approximately half a turn from the cold side, to adjust G L =.5 ms. C adjusted for G S = 2 ms. Fig.7 Gain control test circuit at f = 2 MHz. 996 Aug 8

9 handbook, full pagewidth V DD V agc V DD 4 kω kω 27 kω L4 L L3 5 Ω output 5 Ω input L2 C 2 to 8 pf C2.5 to 3.5 pf.8 kω 36 Ω C3.5 to 3.5 pf C4 4 to 4 pf MGE8 V DD V DD = 2 V; G S = 3.3 ms; G L = ms. L = L4 = 2 nh; turns.5 mm copper wire, without spacing, internal diameter 3 mm. L2 = 2 cm, silvered.8 mm copper wire, 4 mm above ground plane. L3 = 2 cm, silvered.5 mm copper wire, 4 mm above ground plane. Fig.8 Gain control test circuit at f = 8 MHz. 996 Aug 9

10 G tr (db) 2 MGE88 G tr (db) I DSS = typ min 2 MGE I DSS = typ min V agc (V) V agc (V) V DD = 2 V; f = 2 MHz; T amb =25 C. Fig.9 Automatic gain control characteristics measured in circuit of Fig.7. V DD = 2 V; f = 8 MHz; T amb =25 C. Fig.2 Automatic gain control characteristics measured in circuit of Fig Aug

11 PACKAGE OUTLINES handbook, full pagewidth A B.2 M A B o. o o M A B MBC845.7 TOP VIEW Dimensions in mm. Fig.2 SOT43. handbook, full pagewidth A B.2 M A o. o o MBC844. M B TOP VIEW Dimensions in mm. Fig.22 SOT43R. 996 Aug

12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 996 Aug 2