Automotive P-Channel 40 V (D-S) 175 C MOSFET

Transcription

1 Automotive P-Channel 4 V (D-S) 75 C MOSFET SQM2P4-4L PRODUCT SUMMARY V DS (V) - 4 R DS(on) ( ) at V GS = - V.4 R DS(on) ( ) at V GS = V.6 I D (A) - 2 Configuration TO-263 Single S FEATURES Halogen-free According to IEC Definition TrenchFET Power MOSFET Package with Low Thermal Resistance AEC-Q Qualified d % R g and UIS Tested Compliant to RoHS Directive 22/95/EC G G D S Top View D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-263 SQM2P4-4L-GE3 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 4 Gate-Source Voltage V GS ± 2 V T Continuous Drain Current a C = 25 C - 2 I D T C = 25 C - 2 Continuous Source Current (Diode Conduction) a I S - 2 A Pulsed Drain Current b I DM - 33 Single Pulse Avalanche Current I AS - 8 L =. mh Single Pulse Avalanche Energy E AS 32 mj T Maximum Power Dissipation b C = 25 C 375 P D T C = 25 C 25 W Operating Junction and Storage Temperature Range T J, T stg - 55 to + 75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c R thja 4 Junction-to-Case (Drain) R thjc.4 C/W Notes a. Package limited. b. Pulse test; pulse width 3 μs, duty cycle 2 %. c. When mounted on " square PCB (FR-4 material). d. Parametric verification ongoing. S-236-Rev. B, 7-Oct- Document Number: 6747 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 SQM2P4-4L SPECIFICATIONS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS =, I D = - 25 μa V Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = - 25 μa Gate-Source Leakage I GSS V DS = V, V GS = ± 2 V - - ± na Zero Gate Voltage Drain Current I DSS V GS = V V DS = - 4 V, T J = 25 C μa V GS = V V DS = - 4 V V GS = V V DS = - 4 V, T J = 75 C On-State Drain Current a I D(on) V GS = - V V DS - 5 V A Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = - V I D = - 3 A Drain-Source On-State Resistance a R DS(on) V GS = - V I D = - 3 A, T J = 25 C V GS = - V I D = - 3 A, T J = 75 C V GS = V I D = - 2 A Forward Transconductance b g fs V DS = - 5 V, I D = - 3 A S Dynamic b Input Capacitance C iss Output Capacitance C oss V GS = V V DS = - 2 V, f = MHz pf Reverse Transfer Capacitance C rss Total Gate Charge c Q g Gate-Source Charge c Q gs V GS = - V V DS = - 2 V, I D = - A nc Gate-Drain Charge c Q gd Gate Resistance R g f = MHz Turn-On Delay Time c t d(on) Rise Time c t r V DD = - 2 V, R L = Turn-Off Delay Time c t d(off) I D - A, V GEN = - V, R g = ns Fall Time c t f Source-Drain Diode Ratings and Characteristics b Pulsed Current a I SM A Forward Voltage V SD I F = - A, V GS = V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S-236-Rev. B, 7-Oct- 2 Document Number: 6747 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 SQM2P4-4L TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 24 2 V GS =Vthru5V 5 2 I D - Drain Current (A) V GS =4V I D - Drain Current (A) 9 6 T C = 25 C 4 V GS =3V V DS - Drain-to-Source Voltage (V) 3 T C = 25 C T C = - 55 C V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 g fs - Transconductance (S) T C = 25 C T C = - 55 C T C = 25 C R DS(on) - On-Resistance (Ω) V GS =4.5V V GS =V I D - Drain Current (A) Transconductance I D - Drain Current (A) On-Resistance vs. Drain Current 5 C - Capacitance (pf) C oss C iss V GS - Gate-to-Source Voltage (V) I D = A V DS =2V C rss V DS - Drain-to-Source Voltage (V) Capacitance Q g - Total Gate Charge (nc) Gate Charge S-236-Rev. B, 7-Oct- 3 Document Number: 6747 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 SQM2P4-4L TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 2. I D =3A R DS(on) - On-Resistance (Normalized) V GS =V I S - Source Current (A).. T J = 5 C T J = 25 C T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature V SD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage.5.2 R DS(on) - On-Resistance (Ω) T J = 5 C V GS(th) Variance (V) I D = 25 μa I D =5mA T J = 25 C V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage T J - Temperature ( C) Threshold Voltage V DS - Drain-to-Source Voltage (V) I D =ma T J - Junction Temperature ( C) Drain Source Breakdown vs. Junction Temperature S-236-Rev. B, 7-Oct- 4 Document Number: 6747 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 SQM2P4-4L THERMAL RATINGS (T A = 25 C, unless otherwise noted) I DM Limited I D - Drain Current (A) Limited by R DS(on)* I D Limited µs ms ms ms, s, s, DC. T C = 25 C Single Pulse BVDSS Limited... V DS - Drain-to-Source Voltage (V) * V GS minimum V GS at which R DS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S-236-Rev. B, 7-Oct- 5 Document Number: 6747 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 SQM2P4-4L THERMAL RATINGS (T A = 25 C, unless otherwise noted) 2 Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 C) - Normalized Transient Thermal Impedance Junction to Case (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.62", double sided with 2 oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S-236-Rev. B, 7-Oct- 6 Document Number: 6747 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 Ordering Information D 2 PAK / TO-263 and TO-262 Ordering codes for the SQ rugged series power MOSFETs in the D 2 PAK / TO-263 and TO-262 packages: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQMN4-2m7 SQMN4-2M7-GE3 SQMN4-2M7_GE3 SQMN- SQMN--GE3 SQMN-_GE3 SQMN5-6L SQMN5-6L-GE3 SQMN5-6L_GE3 SQMP6-8m9L SQMP6-8M9L-GE3 SQMP6-8M9L_GE3 SQM2N2-m3L SQM2N2-M3L-GE3 SQM2N2-M3L_GE3 SQM2N3-m5L SQM2N3-M5L-GE3 SQM2N3-M5L_GE3 SQM2N4-m7 SQM2N4-M7-GE3 SQM2N4-M7_GE3 SQM2N4-m7L SQM2N4-M7L-GE3 SQM2N4-M7L_GE3 SQM2N4-m9 SQM2N4-M9-GE3 SQM2N4-M9_GE3 SQM2N6-6 SQM2N6-6-GE3 SQM2N6-6_GE3 SQM2N6-3m5L SQM2N6-3M5L-GE3 SQM2N6-3M5L_GE3 SQM2N-9 SQM2N-9-GE3 SQM2N-9_GE3 SQM2N-3m8 SQM2N-3M8-GE3 SQM2N-3M8_GE3 SQM2P4-4L SQM2P4-4L-GE3 SQM2P4-4L_GE3 SQM2P6-7L SQM2P6-7L-GE3 SQM2P6-7L_GE3 SQM2P-mL - SQM2P_mLGE3 SQM2N4-mL SQM2N4-ML-GE3 SQM2N4-ML_GE3 SQM2N4-m7L SQM2N4-M7L-GE3 SQM2N4-M7L_GE3 SQM2N4-m8 SQM2N4-M8-GE3 SQM2N4-M8_GE3 SQM25N5-52 SQM25N5-52-GE3 SQM25N5-52_GE3 SQM35N3-97 SQM35N3-97-GE3 SQM35N3-97_GE3 SQM4EL - SQM4EL_GE3 SQM4N-3 SQM4N-3-GE3 SQM4N-3_GE3 SQM4N5-38 SQM4N5-38-GE3 SQM4N5-38_GE3 SQM4P-4L SQM4P-4L-GE3 SQM4P-4L_GE3 SQM47N-24L SQM47N-24L-GE3 SQM47N-24L_GE3 SQM52EL - SQM52EL_GE3 SQM5N4-4mL SQM5N4-4ML-GE3 SQM5N4-4ML_GE3 SQM5N4-4m SQM5N4-4M-GE3 SQM5N4-4M_GE3 SQM5P3-7 SQM5P3-7-GE3 SQM5P3-7_GE3 SQM5P4-9L SQM5P4-9L-GE3 SQM5P4-9L_GE3 SQM5P6-5L SQM5P6-5L-GE3 SQM5P6-5L_GE3 SQM5P8-25L SQM5P8-25L-GE3 SQM5P8-25L_GE3 SQM63E - SQM63E_GE3 SQM6N6-5 SQM6N6-5-GE3 SQM6N6-5_GE3 SQM6N2-35 SQM6N2-35-GE3 SQM6N2-35_GE3 SQM76EL - SQM76EL_GE3 SQM85N5-9 SQM85N5-9-GE3 SQM85N5-9_GE3 SQV2N-3m8 SQV2N-3m8-GE3 SQV2N-3m8_GE3 SQV2N6-4m7L - SQV2N6-4m7L_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 6-Jul-6 Document Number: 6764 For technical questions, contact: automostechsupport@vishay.com ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 TO-263 (D 2 PAK): 3-LEAD Package Information -B- E -A- L2 A c2 D4 D2 D3 E K 6 E3 D L3 L D A A e b2 b Detail A c E2. M A M 2 PL - 5 L L4 DETAIL A (ROTATED 9 ) M b b SECTION A-A Notes. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. c c c* INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A b b b Thin lead Thick lead c Thin lead Thick lead c D D D D D E E E E e. BSC 2.54 BSC K L L L L L4. BSC.254 BSC M ECN: T3-77-Rev. K, 3-Sep-3 DWG: 5843 Revison: 3-Sep-3 Document Number: 798 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 AN826 RECOMMENDED MINIMUM PADS FOR D 2 PAK: 3-Lead.42 (.668).635 (6.29).355 (9.7).45 (3.683).35 (3.429).2 (5.8).5 (.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: Apr-5

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