uclamp3301p Low Voltage μclamp for ESD and CDE Protection
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- Gerard Buck Shields
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1 - MicroClamp Description The μclamp TVS diodes are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDAs. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The μclamp 330P is constructed using Semtech s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. The μclamp330p is in an 2-pin SLP006P2 package. It measures.0 x 0.6 x 0.5. The leads are spaced at a pitch of 0.65 and are finished with lead-free NiPdAu. Each device will protect one line operating at 3.3 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD iunity requirements of IEC , Level 4 (±5kV air, ±8kV contact discharge). The combination of small size and high ESD surge capability makes them ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. Dimensions uclamp330p Low μclamp for ESD and CDE Protection Features Transient protection for data lines to IEC (ESD) IEC (EFT) Cable Discharge Event (CDE) Ultra-small package Protects one data line Low clamping voltage Working voltage: 3.3V Low leakage current Solid-state silicon-avalanche technology Mechanical Characteristics SLP006P2 package Pb-Free, Halogen Free, RoHS/WEEE Compliant Nominal Dimensions:.0 x 0.6 x 0.5 Lead Finish: NiPdAu Molding compound flaability rating: UL 94V-0 Marking: Marking code, cathode band Packaging: Tape and Reel Applications Cellular Handsets & Accessories Personal Digital Assistants (PDAs) Notebooks & Handhelds Portable Instrumentation Digital Cameras Peripherals MP3 Players Schematic & PIN Configuration Revision 2/24/200 Maximum Dimensions () SLP006P2 (Bottom View)
2 uclamp330p Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power (tp = 8/20μs) M aximum Peak Pulse Current ( tp = 8/20μs) P pk 40 Watts I pp 5 Amps ESD per IEC ESD per IEC (Air) (Contact) V ESD +/- 20 +/- 5 kv Operating Temperature T J -40 to +85 C Storage Temperature T STG 55 to C Electrical Characteristics (T=25 o C) Parameter Symbol Conditions Minimum Typical Maximum Units Reverse Stand-Off V WM R. 3 3 V Punch-Through Snap-Back V PT V SB I PT I SB = 2μA V = 50mA 2. 8 V Reverse Leakage Current I R V RWM = 3.3V μa Clamping V C I PP = A, tp = 8/20μs 5. 5 V Clamping V C I PP = 5A, tp = 8/20μs 8. 0 V Reverse Clamping V CR I PP = A, tp = 8/20μs 2. 4 V I/O pin to Gnd Junction Capacitance C j = 0V, f = MHz V R pf V R I/O pin to Gnd = 3.3V, f = MHz 4 pf 200 Semtech Corp. 2
3 uclamp330p Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve Peak Pulse Power - P PP (kw) Pulse Duration - tp (µs) % of Rated Power or I PP Ambient Temperature - T A ( o C) Clamping vs. Peak Pulse Current Normalized Junction Capacitance vs. Reverse Clamping - V C (V) Waveform Parameters: 2 tr = 8μs td = 20μs Peak Pulse Current - I PP (A) Insertion Loss S2 Cj(VR) / Cj(VR=0V) Reverse - V R (V) ESD Clamping (8kV Contact per IEC ) f = MHz CH S2 LOG 6 db / REF 0 db : db 900 MHz 2: db.8 GHz 3: db 2.5 GHz 0 db -6 db 4 4: db 227MHz -2 db -8 db db -30 db -36 db MHz 0 MHz 00 MHz GHz 3 GHz START. 030 MHz STOP MHz Note: Data is taken with a 0x attenuator 200 Semtech Corp. 3
4 uclamp330p Applications Information Device Connection Options The μclamp330p is designed to protect one data or I/O line operating at 3.3 volts. It will present a high impedance to the protected line up to 3.3 volts. It will turn on when the line voltage exceeds 3.5 volts. The device is unidirectional and may be used on lines where the signal polarity is above ground. The cathode band should be placed towards the line that is to be protected. These devices should not be connected to DC supply rails as they can latch up as described below. Due to the snap-back characteristics of the low voltage TVS, it is not recoended that the I/O line be directly connected to a DC source greater than snapback votlage (V SB ) as the device can latch on as described below. EPD TVS Characteristics Device Schematic & Pin Configuration Pin 2 Pin EPD TVS IV Characteristic Curve The μclamp330p is constructed using Semtech s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the μclamp330p can effectively operate at 3.3V while maintaining excellent electrical characteristics. V F IPP I SB I PT I R V RWM VSB VPT V C The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (V RWM ). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (V PT ) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. When the TVS is conducting current, it will exhibit a slight snap-back or negative resistance characteris- tics due to its structures. This point is defined on the curve by the snap-back voltage (V SB ) and snap-back current (I SB ). To return to a non-conducting state, the current through the device must fall below the I SB (approximately <50mA) and the voltage must fall below the V SB (normally 2.8 volts for a 3.3V device). If a 3.3V TVS is connected to 3.3V DC source, it will never fall below the snap-back voltage of 2.8V and will therefore stay in a conducting state. I F 200 Semtech Corp. 4
5 uclamp330p Applications Information - Spice Model Figure - uclamp330p Spice Model Table - μclamp330p Spice Parameters Parameter IS BV VJ RS IBV CJO TT U nit D (TVS) D2 (LCRD) Amp.00E-20.00E-20 Volt Volt Ohm Farad 4E-2 7E-2 Amp.0E-3.0E-3 sec 2.54E E- 9 M N --.. EG ev Semtech Corp. 5
6 uclamp330p Outline Drawing - SLP006P2 A D B aaa C A TOP VIEW E A C SEATING PLANE DIMENSIONS INCHES MILLIMETERS DIM MIN NOM MAX MIN NOM MAX A A b D E e.026 BSC 0.65 BSC L R N 2 2 aaa bbb PIN ID bxn bbb C A B R e 2x L BOTTOM VIEW NOTES:. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). Land Pattern - SLP006P2 (C) G Z X Y DIMENSIONS DIM INCHES MILLIMETERS C (.033) (0.85) G X Y Z NOTES:. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 200 Semtech Corp. 6
7 uclamp330p Marking Code 3P Note: Cathode band at Pin 2 PIN ID Ordering Information Part Number uclamp330p.tct Working Qty per Reel Reel Size 3.3V 3,000 7 Inch Notes: ) MicroClamp, uclamp and μclamp are trademarks of Semtech Corporation Tape and Reel Specification Cathode Band Location User Direction of feed Device Orientation in Tape A0 B0 K / / /-0.0 Tape Width B, (Max) D D E F P P0 P2 T W (.65) ( ) 0.4 ±0.25 (.03).750±.0 (.069±.004) 3.5±0.05 (.38±.002) 4.0±0.0 (.57±.00-4) 4.0±0. (.57±.00-4) 2.0±0.05 (.079±.002) 0.254±0.02 (.06) (.32±.02) Contact Information Semtech Corporation Protection Products Division 200 Flynn Road, Camarillo, CA 9302 Phone: (805)498-2 FAX (805) Semtech Corp. 7
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