NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349

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1 thru 2N3507AU4 Available on commercial versions NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DESCRIPTION Qualified Levels: JAN, JANTX and JANTXV This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The U4 package is hermetically sealed and provides a low profile for minimizing board height. The 'A' version maintains it's forward current transfer ratio,, at low temperature at higher collector-emitter voltage. These devices also available in TO-5 and TO-39 packages. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website FEATURES JEDEC registered through series. RoHS compliant versions available (commercial grade only). Vce(sat) = 0.5 Ic = 500 ma. Rise time t r = 30 ns I C = 1.5 A, I B1 = 150 ma. Fall time t f = 35 ns I C = 1.5 A, I B1 = I B2 = 150 ma. APPLICATIONS / BENEFITS General purpose transistors for medium power applications requiring high frequency switching and low package profile. Military and other high-reliability applications. U4 Package Also available in: TO-39 package (leaded) 2N3506 2N3507A TO-5 package (long-leaded) 2N3506L 2N3507AL MAXIMUM RATINGS Parameters / Test Conditions Symbol Unit Collector-Emitter Voltage V CEO V Collector-Base Voltage V CBO V Emitter-Base Voltage V EBO 5.0 V Collector Current I C 3.0 A Total Power T A = + C T C = +100 C (2) P 1.0 D 5.0 W Operating & Storage Junction Temperature Range T J, T stg -65 to +200 C Notes: 1. Derate linearly 5.71 mw/ C for T A > + C. 2. Vce = 40 V. MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: LDS , Rev. 1 (111616) 2011 Microsemi Corporation Page 1 of 6

2 thru 2N3507AU4 MECHANICAL and PACKAGING CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel plated kovar lid. TERMINALS: Gold over nickel plated surface mount terminations. MARKING: Part number, date code, manufacturer s ID. POLARITY: See package dimensions. TAPE & REEL option: Standard per EIA-481D. Consult factory for quantities. WEIGHT:.1 grams (1 milligrams). See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3506 A U4 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = commercial JEDEC type number (see Electrical Characteristics table) RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-rohs compliant Surface Mount Package -55 C at higher V CE Symbol C obo I C I CEO I CEX I EBO V BE V CE V CEO V CBO V EB V EBO SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance. Collector current, dc. Collector cutoff current, base open. Collector cutoff current, circuit between base and emitter. Emitter cutoff current, collector open. Common-emitter static forward current transfer ratio. Base-emitter voltage, dc. Collector-emitter voltage, dc. Collector-emitter voltage, base open. Collector-emitter voltage, emitter open. Emitter-base voltage, dc. Emitter-base voltage, collector open. LDS , Rev. 1 (111616) 2011 Microsemi Corporation Page 2 of 6

3 thru 2N3507AU4 ELECTRICAL T A = + C, unless otherwise noted. OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I C = 10 ma Collector-Emitter Cutoff Current V CE = 40 V V CE = 60 V Collector-Base Breakdown Voltage I C = 100 µa Emitter-Base Breakdown Voltage I E = 10 µa V (BR)CEO I CEX V (BR)CBO V µa V (BR)EBO 5 V V ON CHARACTERISTICS (1) I C = 500 ma, V CE = 1 V I C = 1.5 A, V CE = 2 V I C = 2.5 A, V CE = 3 V I C = 3.0 A, V CE = 5 V I C = 500 ma, V CE = C I C = 500 ma, V CE = C Collector-Emitter Saturation Voltage I C = 500 ma, I B = 50 ma Collector-Emitter Saturation Voltage I C = 1.5 A, I B = 150 ma Collector-Emitter Saturation Voltage I C = 2.5 A, I B = 0 ma Base-Emitter Saturation Voltage I C = 500 ma, I B = 50 ma Base-Emitter Saturation Voltage I C = 1.5 A, I B = 150 ma Base-Emitter Saturation Voltage I C = 2.5 A, I B = 0 ma 2N3506AU4 2N3507AU V CE(sat) 0.5 V V CE(sat) 1.0 V V CE(sat) 1.5 V V BE(sat) 1.0 V V BE(sat) V V BE(sat) 2.0 V (1) Pulse Test: Pulse Width = 300 µs, duty cycle 2.0%. LDS , Rev. 1 (111616) 2011 Microsemi Corporation Page 3 of 6

4 thru 2N3507AU4 ELECTRICAL T A = + C, unless otherwise noted. DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short- Circuit Forward Current Transfer Ratio h fe I C = 100 ma, V CE = 5 V, f = 20 MHz Output Capacitance V CB = 10 V, I E = 0, 100 khz f 1.0 MHz C obo 40 pf Input Capacitance V EB = 3.0 V, I C = 0, 100 khz f 1.0 MHz C ibo 300 pf SWITCHING CHARACTERISTICS (2) Delay Time I C = 1.5 A, I B1 = 150 ma t d 15 ns Rise Time I C = 1.5 A, I B1 = 150 ma Storage Time I C = 1.5 A, I B1 = I B2 = 150 ma Fall Time I C = 1.5 A, I B1 = I B2 = 150 ma t r 30 ns t s 55 ns t f 35 ns (2) Consult MIL-PRF-19500/349 for additional information. LDS , Rev. 1 (111616) 2011 Microsemi Corporation Page 4 of 6

5 thru 2N3507AU4 GRAPHS DC Operation Maximum Rating (W) =================== Legend Legend (Top (Top to to Bottom) =================== Vce = 4 V Vce = 4V Vce = 15V = 15 V Vce = 60V Vce = 60 V T C ( o C) (Case) FIGURE 1 Temperature-Power Derating Curve NOTES: Thermal Resistance Junction to Case = 7.0 o C/W Case mounted to infinite sink. THETA ( o C/W) TIME (s) FIGURE 2 Maximum Thermal Impedance (R ӨJC ) LDS , Rev. 1 (111616) 2011 Microsemi Corporation Page 5 of 6

6 thru 2N3507AU4 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. Dimensions Ltr Inches Millimeters Min Max Min Max BL BW CH LH LW LW LL LL LS LS Q Q TERMINAL 1 COLLECTOR 2 BASE 3 EMITTER LDS , Rev. 1 (111616) 2011 Microsemi Corporation Page 6 of 6

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