P-Channel 12 V (D-S) MOSFET

Transcription

1 Si065X PChannel V (S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) 0.56 at V GS =.5 V at V GS =.5V nc 0.5 at V GS =.8V 0.9 FEATURES TrenchFET Power MOSFET 00 % R g Tested Material categorization: For definitions of compliance please see /doc?999 APPLICATIONS Load Switch for Portable evices SC89 (LEAS) S 6 Marking Code G 5 S W XX Lot Traceability and ate Code Part # Code Y Y G Top View Ordering Information: Si065XTGE (Lead (Pb)free and Halogenfree) PChannel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 5 C, unless otherwise noted) Parameter Symbol Limit Unit rainsource Voltage V S V GateSource Voltage V GS ± 8 T A = 5 C.8 b, c Continuous rain Current (T J = 50 C) I T A = 70 C 0.9 b, c A Pulsed rain Current I M 8 Continuous Sourcerain iode Current T A = 5 C I S 0. b, c T A = 5 C Maximum Power issipation a 0.6 b, c P W T A = 70 C 0.5 b, c Operating Junction and Storage Temperature Range T J, T stg 55 to 50 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 0 50 Maximum JunctiontoAmbient a, b Steady State R thja C/W State Notes: a. Maximum under steady state conditions is 650 C/W. b. Surface mounted on " x " FR board. c. t = 5 s. ocument Number: 70 S69Rev., 09Jul THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT /doc?9000

2 Si065X SPECIFICATIONS (T J = 5 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static rainsource Breakdown Voltage V S V GS = 0 V, I = 50 µa V V S Temperature Coefficient V S /T J 8.7 I = 50 µa V GS(th) Temperature Coefficient V GS(th) /T J. mv/ C GateSource Threshold Voltage V GS(th) V S = V GS, I = 50 µa V GateSource Leakage I GSS V S = 0 V, V GS = ± 8 V ± 00 na V S = V, V GS = 0 V na Zero Gate Voltage rain Current I SS V S = V, V GS = 0 V, T J = 85 C 0 µa OnState rain Current a I (on) V S = 5 V, V GS =.5 V 8 A V GS =.5 V, I =.8 A rainsource OnState Resistance a R S(on) V GS =.5 V, I =.07 A V GS =.8 V, I = 0.9 A Forward Transconductance g fs V S = 6 V, I =.8 A 5.8 S ynamic b Input Capacitance C iss 80 Output Capacitance C oss V S = 6 V, V GS = 0 V, f = MHz 90 pf Reverse Transfer Capacitance C rss 5 V S = 6 V, V GS = 5 V, I =.8 A Total Gate Charge Q g nc GateSource Charge Q gs V S = 6 V, V GS =.5 V, I = Gaterain Charge Q gd.7 Gate Resistance R g f = MHz 0 5 TurnOn elay Time t d(on) 9.5 Rise Time t r V = 6 V, R L = TurnOff elaytime t d(off) I 0.95 A, V GEN =.5 V, R g = ns Fall Time t f rainsource Body iode Characteristics Pulse iode Forward Current a I SM 8 A Body iode Voltage V S I S = 0.6 A 0.8. V Body iode Reverse Recovery Time t rr 9. nc Body iode Reverse Recovery Charge Q rr I F = 0.7 A, di/dt = 00 A/µs Reverse Recovery Fall Time t a.7 ns Reverse Recovery Rise Time t b 5.5 Notes: a. Pulse test; pulse width 00 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ocument Number: 70 S69Rev., 09Jul THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT /doc?9000

3 Si065X TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) 8.0 V GS = 5 V thru.5 V (A) rain Current 6 V GS = V rain Current (A).5.0 T C = 5 C I V GS =.5 V 0.5 T C = 5 C V GS =.0 V V S raintosource Voltage (V) Output Characteristics T C = 55 C V GS GatetoSource Voltage (V) Transfer Characteristics Curves vs. Temp. 0.5 OnResistance (Ω) V GS =.8 V V GS =.5 V V GS =.5 V R S(on) I rain Current (A) OnResistance vs. rain Current 5 I =.8 A GatetoSource Voltage (V) I 000 Capacitance (pf) C iss C 00 C oss C rss V S raintosource Voltage (V) Capacitance. V S = 6 V V S = 9.6 V OnResistance....0 V GS V GS =.5 V, I =.8 A (Normalized) V GS =.5 V, I =.07 A V GS =.8 V, I = 0.9 A R S(on ) Q g Total Gate Charge (nc) Gate Charge V GS GatetoSource Voltage (V) OnResistance vs. Junction Temperature ocument Number: 70 S69Rev., 09Jul THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT /doc?9000

4 Si065X TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) I S Source Current (A) 0 0. T J = 50 C T J = 5 C raintosource OnResistance (Ω) I =.09 A T A = 5 C T A = 5 C V S Sourcetorain Voltage (V) Sourcerain iode Forward Voltage R S(on ) V GS GatetoSource Voltage (V) R S(on) vs. V GS vs. Temperature V GS(th) (V ) 0.6 I = 50 µa BVSS (V) T J Temperature ( C) Threshold Voltage Temperature ( C) BVSS vs. Temparture 0 rain Current (A) Limited by R S(on)* 0. ms 0 ms 00 ms s 0 s I 0.0 T A = 5 C Single Pulse C BVSS Limited V S raintosource Voltage (V) * V GS > minimum V GS at which R S(on) is specified Safe Operating Area, JunctiontoAmbient ocument Number: 70 S69Rev., 09Jul THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT /doc?9000

5 Si065X TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) uty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse uration (s) Notes: P M t t t. uty Cycle, = t. Per Unit Base = R thja = 50 C/W. T JM T A = P M Z (t) thja. Surface Mounted Normalized Thermal Transient Impedance, JunctiontoAmbient maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?70. ocument Number: 70 S69Rev., 09Jul 5 THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT /doc?9000

6 Package Information SC89 6Leads (SOT56F) E/ A e x aaa C B 6 5 SECTION BB E/ C 6 E E x aaa C ETAIL A 5 x bbb C e B 6x b ddd M C A B L A L A A SEE ETAIL A Notes. imensions in millimeters.. imension does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.5 mm per dimension E does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.5 mm per side.. imensions and E are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body.. atums A, B and to be determined 0.0 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.5 mm from the lead tip. IM. MILLIMETERS MIN. NOM. MAX. A A b c E E e e L L C09Rev. C, Aug WG: 5880 Revision: Aug ocument Number: 76 For technical questions, contact: analogswitchtechsupport@vishay.com THIS OCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT /doc?9000

7 Application Note 86 RECOMMENE MINIMUM PAS FOR SC89: 6Lead 0.05 (.00) (.75) 0.0 (0.798) 0.09 (0.78) 0.0 (0.00) 0.05 (0.0) 0.00 (0.500) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE ocument Number: 7605 Revision: Jan08

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