SJPZ Series. Power Zener Diodes. Features and Benefits. Description. Application. Package: Surface Mount. Product Structure

Transcription

1 Features and Benefits High Transient Peak Reverse Power, P RSM : 500 W Low Reverse Breakdown oltage, Z : up to 4. (max) at I Z = ma Low Reverse Leakage Current, I R : 0 μa (max) Flammability rating UL94-0 (Equivalent) Pins Pb (lead) free Description The SJPZ series are 500 W silicon diodes, which can sustain a high voltage with low loss. Application Surge voltage absorption Package: Surface Mount Not to scale Product Structure Epoxy resin body Silicon chip Solder-plated copper leadframe June 5, 009

2 Selection Guide Part Number Reverse Breakdown oltage, Z () Reverse Leakage Current, I R (μa) Temperature Coefficient Breakdown oltage, γ Z (m/ C) Equivalent Resistance of Breakdown Region, R Z (Ω) SJPZ-N8L SJPZ-N8R 6.8 to 9. 0 (max) 3 (typ) (typ) SJPZ-N7L SJPZ-N7R 5. to (max) 3 (typ) 4 (typ) SJPZ-N33L SJPZ-N33R 3.0 to (max) 9 (typ) 5 (typ) SJPZ-N40L SJPZ-N40R 37.8 to 4. 0 (max) 35 (typ) 7 (typ) *See the Packing Options page for details on the packing orientation. Tape and Reel Packing* Absolute Maximum Ratings Characteristic Symbol Conditions Rating Unit Allowable Power Dissipation P Refer to figure W Transient Peak Reverse Power P RSM 500 μs, single square wave 500 W Junction Temperature T j 55 to 50 C Storage Temperature T stg 55 to 50 C Electrical Characteristics valid at T A = 5 C, unless otherwise specified Characteristic Symbol Test Conditions alue Unit SJPZ-N8 6.8 to 9. Reverse Breakdown oltage Reverse Leakage Current Temperature Coefficient Breakdown oltage Equivalent Resistance of Breakdown Region Forward oltage Z I R γ Z R Z F SJPZ-N7 5. to 8.9 I Z = ma SJPZ-N to 35.0 SJPZ-N to 4. SJPZ-N8 R = 3 μa SJPZ-N7 R = 0 μa (max) SJPZ-N33 R = 5 μa SJPZ-N40 R = 30 μa SJPZ-N8 3 (typ) m/ C SJPZ-N7 3 (typ) m/ C I Z = ma SJPZ-N33 9 (typ) m/ C SJPZ-N40 35 (typ) m/ C SJPZ-N8 (typ) Ω SJPZ-N7 4 (typ) Ω I Z = 0 to 0 ma SJPZ-N33 5 (typ) Ω SJPZ-N40 7 (typ) Ω SJPZ-N8 SJPZ-N7 I F = A. (max) SJPZ-N33 SJPZ-N40 June 5, 009

3 Characteristic Performance Allowable Power Dissipation, P (W) Allowable Power Dissipation versus Ambient Temperature Ambient Temperature, T A ( C) Figure. Derating Characteristic Mounted on glass-epoxy PCB Solder land area 3 x 3 mm each Transient Peak Reverse Power versus Pulse Width Transient Peak Reverse Power, PRSM (W) Pulse Width, t (ms) Figure. Transient Peak Reverse Power Characteristic 3 June 5, 009

4 Package Outline 4.5 ±0..6 ±0. Cathode Index Band X.3 ±0.4.0 MIN X.5 ± Dimensions in mm Package Marking ZN YMDD Cathode Index Band Product Number ZN is an abbreviation of SJPZ-N is the nominal Z voltage Lot Number Y is the last digit of the year (0 to 9) M is the month ( to 9, O, N, D) DD is the day (0 to 3) Material Composition and Internal Structure 4. Body: Plastic, epoxy resin. Chip: Si 3. Leadframe: Cu with solder plating 4. Interior Leadframe: Cu 3 3 Weight: Approximately 0.07 g Pin treatment Pb-free. Device composition compliant with the RoHS directive. 4 June 5, 009

5 Packing Options Embossed Tape Feeding Direction 0.05 L orientation ZN YMDD Dimensions in mm Feeding Direction Tape and reel dimensions the same for both orientations R orientation ZN YMDD Reel R pieces per reel () Device is placed in the embossed pocket with the mounting electrode down. () 50 to 00 mm leader tape is attached to the tip of the tape. (3) 0 or more blank pockets are provided at both the beginning and the end of the tape June 5, 009

6 The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest revision of the document before use. Application and operation examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products herein. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. In the case that you use Sanken products or design your products by using Sanken products, the reliability largely depends on the degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. In general, derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor products. For these stresses, instantaneous values, maximum values and minimum values must be taken into consideration. In addition, it should be noted that since power devices or IC's including power devices have large self-heating value, the degree of derating of junction temperature affects the reliability significantly. When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. Anti radioactive ray design is not considered for the products listed herein. Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken's distribution network. The contents in this document must not be transcribed or copied without Sanken's written consent. 6 June 5, 009