IRFZ46N PD C. HEXFET Power MOSFET. R DS(on) = 0.020Ω I D = 53A
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1 HEXFET Power MOSFET P C IRFZ46N dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated G V SS = 55V R S(on) = 0.020Ω escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve the owest possibe on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient device for use in a wide variety of appications. S I = 53 The TO-220 package is universay preferred for a commercia-industria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance and ow package cost of the TO-220 contribute to its wide acceptance throughout the industry. bsoute Maximum Ratings Therma Resistance TO-220B Parameter Max. Units T C = 25 C Continuous rain Current, V V 53 T C = 0 C Continuous rain Current, V V 37 I M Pused rain Current 80 C = 25 C Power issipation 20 W Linear erating Factor 0.77 W/ C V GS Gate-to-Source Votage ±20 V E S Singe Puse vaanche Energy 230 mj I R vaanche Current 28 E R Repetitive vaanche Energy 2 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (.6mm from case) Mounting torque, 6-32 or M3 screw. bf in (.N m) Parameter Min. Typ. Max. Units R θjc Junction-to-Case.3 R θcs Case-to-Sink, Fat, Greased Surface 0.50 C/W R θj Junction-to-mbient 62 8/25/97
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 55 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Votage Temp. Coefficient 0.07 V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance Ω V GS = V, I = 28 V GS(th) Gate Threshod Votage V V S = V GS, I = 250µ g fs Forward Transconductance 6 S V S = 25V, I = 28 I SS rain-to-source Leakage Current 25 V S = 55V, V GS = 0V µ 250 V S = 44V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 0 V GS = 20V n Gate-to-Source Reverse Leakage -0 V GS = -20V Q g Tota Gate Charge 6 I = 28 Q gs Gate-to-Source Charge 3 nc V S = 44V Q gd Gate-to-rain ("Mier") Charge 24 V GS = V, See Fig. 6 and 3 t d(on) Turn-On eay Time 2 V = 28V t r Rise Time 80 I = 28 ns t d(off) Turn-Off eay Time 43 R G = 2Ω t f Fa Time 52 R = 0.98Ω, See Fig. Between ead, L Interna rain Inductance 4.5 6mm (0.25in.) nh from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 500 V GS = 0V C oss Output Capacitance 450 pf V S = 25V C rss Reverse Transfer Capacitance 60 ƒ =.0MHz, See Fig. 5 G S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 53 (Body iode) showing the G I SM Pused Source Current 80 integra reverse (Body iode) p-n junction diode. V S iode Forward Votage.3 V T J = 25 C, I S = 28, V GS = 0V t rr Reverse Recovery Time 72 ns T J = 25 C, I F = 28 Q rr Reverse Recovery Charge 2 3 nc di/dt = 0/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L ) S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) ƒ I S 28, di/dt 240/µs, V V (BR)SS, T J 75 C V = 25V, starting T J = 25 C, L = 4µH R G = 25Ω, I S = 28. (See Figure 2) Puse width 300µs; duty cyce 2%.
3 I, rain-to-source C urrent () 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I, rain-to-source C urrent () 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T C = 25 C 0. 0 V S, rain-to-source Votage (V) Fig. Typica Output Characteristics 20µs PULSE WITH T C = 75 C 0. 0 V S, rain-to-source Votage (V) Fig 2. Typica Output Characteristics I, rain-to-s ource C urrent ( ) 00 0 V S= 25V 20µs PULSE W ITH V GS T = 25 C J T = 75 C J, Gate-to-Source Votage (V) R S(on), rain-to-s ource On Resistance (Normaized) I = 46 V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature
4 C, Capacitance (pf) 2800 V GS = 0V, f = M Hz C iss = C gs C gd, C ds SHORTE 2400 C rss = C gd C oss = C ds C gd 2000 C is s 600 C oss C rss V S, rain-to-source Votage (V) V, Gate-to-Source V otage (V ) GS I = 28 V S = 44V V S = 28V FOR TEST CIRCUIT 0 SEE FIGURE Q, Tota Gate Charge (nc) G Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J V GS = 0V V S, Source-to-rain Votage (V) I, rain Current () 00 OPE RTION IN THIS RE LIMITE BY RS(on) 0 µs 0µs ms T ms C = 25 C T J = 75 C Singe Puse 0 V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea
5 60 50 R G V GS V S.U.T. - V I, rain Current () Fig a. Switching Time Test Circuit V S 90% V Puse Width µs uty Factor 0. % T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum rain Current Vs. Case Temperature Fig b. Switching Time Waveforms Therma Response (Z thjc ) 0. = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t Peak T J = P M x Z thjc TC t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-Case
6 L V S.U.T. R G V - V I S t p 0.0Ω Fig 2a. Uncamped Inductive Test Circuit V (BR)SS t p V V S E S, Singe Puse vaanche Energy (mj) TOP BOTTOM V = 25V Starting T J, Junction Temperature ( C) I I S Fig 2b. Uncamped Inductive Waveforms Fig 2c. Maximum vaanche Energy Vs. rain Current Current Reguator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF V Q GS Q G.U.T. V - S V GS V G 3m Charge Fig 3a. Basic Gate Charge Waveform I G I Current Samping Resistors Fig 3b. Gate Charge Test Circuit
7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G river same type as.u.t. I S controed by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-ppied Votage Inductor Curent Body iode Forward rop Rippe 5% I S * V GS = 5V for Logic Leve evices Fig 4. For N-Channe HEXFETS
8 Package Outine TO-220B Outine imensions are shown in miimeters (inches) 2.87 (.3) 2.62 (.3).54 (.45).29 (.405) 3.78 (.49) 3.54 (.39) (.8 5) (.6 5) - B -.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) (.255 ) 6. (.240 ) (.045) M IN LE SSIGNMENTS - G TE 2 - R IN 3 - SOURCE 4 - R IN 4.09 (.555) 3.47 (.530) 4.06 (.60) 3.55 (.40).40 (.055) 3X.5 (.045) 2.54 (.0) 2X 3X 0.93 (.037) 0.69 (.027) (.0 4 ) M B M 3X 0.55 (.022) 0.46 (.08) 2.92 (.5) 2.64 (.4) NOTES: IM E N S IO N IN G & TO LE R N C IN G PE R N SI Y 4.5M, O U TLIN E C O N F OR M S TO JE E C O U TLIN E TO B. 2 C O N TR OL LIN G IM E N S IO N : IN C H 4 H E TSIN K & LE M E S U R E M E N TS O N O T IN C L U E BU R R S. Part Marking Information TO-220B EXMPLE EXMPLE : THIS : THIS N IS N IRF IRF WITH WITH SSEMBLY SSEMBLY LOT LOT COE COE 9BM 9BM INTERNTIONL RECTIFIER RECTIFIER IRF LOGO LOGO B 9B M M SSEMBLY LOT LOT COE COE PRT PRT NUMBER NUMBER TE TE COE COE (YYWW) W) YY YY = YER = YER WW WW = WEEK = WEEK WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITLY: Via Liguria 49, 07 Borgaro, Torino Te: IR FR EST: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Te: IR SOUTHEST SI: 35 Outram Road, #-02 Tan Boon Liat Buiding, Singapore 036 Te: ata and specifications subject to change without notice. 8/97
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