Outline. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000

Transcription

1 Nch 3V 4.5A Power MOSFET Datasheet Outline V DSS 3V TSMT6 R DS(on) (Max.) 38mW I D 4.5A P D.25W () (2) (3) (6) (5) (4) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). 4) Pb-free lead plating ; RoHS compliant Inner circuit () Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain * ESD PROTECTION DIODE *2 BODY DIODE Packaging specifications Packaging Taping Application Reel size (mm) 8 DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3, Taping code Marking TR QL Absolute maximum ratings(t a = 25 C) Parameter Symbol Value Unit Drain - Source voltage V DSS 3 V Continuous drain current I D * Pulsed drain current I D,pulse *2 4.5 A 8 A Gate - Source voltage V GSS 2 V Power dissipation P D *3 P D *4.25 W.6 W Junction temperature T j 5 C Range of storage temperature T stg -55 to +5 C / Rev.B

2 Thermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - ambient R thja *3 R thja *4 - - C/W C/W Electrical characteristics(t a = 25 C),unless otherwise specified Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D = ma V Breakdown voltage temperature coefficient ΔV (BR)DSS ΔT j I D =ma referenced to 25 C mv/ C Zero gate voltage drain current I DSS V DS = 3V, V GS = V - - ma Gate - Source leakage current I GSS V GS = 2V, V DS = V - - ma Gate threshold voltage V GS (th) V DS = V, I D = ma V Gate threshold voltage temperature coefficient ΔV (GS)th ΔT j I D =ma referenced to 25 C mv/ C V GS =V, I D =4.5A Static drain - source on - state resistance R DS(on) V GS =4.5V, I D =4.5A V GS =4.V, I D =4.5A mw V GS =V, I D =4.5A, T j =25 C Gate input resistannce R G f = MHz, open drain W Transconductance g fs V DS =V, I D =4.5A S * Limited only by maximum temperature allowed. *2 Pw ms, Duty cycle % *3 Mounted on a ceramic board (3 3.8mm) *4 Mounted on a FR4 (5 2.8mm) Pulsed 2/ Rev.B

3 Electrical characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Input capacitance C iss V GS = V Output capacitance C oss V DS = V pf Reverse transfer capacitance C rss f = MHz Turn - on delay time t d(on) Rise time t r Turn - off delay time t d(off) Fall time t f V DD 5V, V GS = V I D = 2.25A R L = 6.67W R G = W ns Gate Charge characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q g V DD 5V, I D =4.5A V GS = 5V V DD 5V, I D =4.5A V GS = V nc Gate - Source charge Q gs Gate - Drain charge Q gd V DD 5V, I D =4.5A V GS = 5V Body diode electrical characteristics (Source-Drain)(T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Inverse diode continuous, forward current I S * T a = 25 C - - A Forward voltage V SD V GS = V, I s =.A V 3/ Rev.B

4 Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Power Dissipation : P D /P D max. [%] Operation in this area is limited by R DS (on) (V GS = V) P W = ms P W = ms DC Operation P W = ms. T a =25ºC Single Pulse Mounted on a ceramic board. (3mm 3mm.8mm).. Junction Temperature : T j [ C] Drain - Source Voltage : V DS [V] Normalized Transient Thermal Resistance : r (t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width T a =25ºC Single Pulse top D =. D =.5 D =. D =.5 D =. bottom Single. Rth(ch-a)=ºC/W Rth(ch-a)(t)=r(t) Rth(ch-a) Mounted on ceramic board (3mm 3mm.8mm)... Peak Transient Power : P(W) Fig.4 Single Pulse Maximum Power dissipation T a =25ºC Single Pulse.. Pulse Width : P W [s] Pulse Width : P W [s] 4/ Rev.B

5 Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) V GS =.V V GS = 4.V T a =25ºC Pulsed V GS = 4.V V GS = 2.8V T a =25ºC Pulsed V GS = 2.8V V GS = 2.5V V GS = 2.5V.5 V GS = 2.V.5 V GS = 2.V Drain - Source Voltage : V DS [V] Drain - Source Voltage : V DS [V] Fig.7 Breakdown Voltage vs. Junction Temperature Fig.8 Typical Transfer Characteristics Drain - Source Breakdown Voltage : V (BR)DSS [V] V GS = V I D = ma Pulsed Junction Temperature : T j [ C] Gate - Source Voltage : V GS [V] 5/ Rev.B

6 Electrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig. Transconductance vs. Drain Current Gate Threshold Voltage : V GS(th) [V] 3 2 V DS = V I D = ma Pulsed Transconductance : g fs [S] V DS = V Pulsed T a = -25ºC T a =25ºC T a =75ºC T a =25ºC... Junction Temperature : T j [ C] Fig. Drain CurrentDerating Curve Fig.2 Static Drain - Source On - State Resistance vs. Gate Source Voltage.2 Drain Current Dissipation : I D /I D max. (%) Static Drain - Source On-State Resistance : R DS(on) [mw] Junction Temperature : T j [ºC] Gate - Source Voltage : V GS [V] 6/ Rev.B

7 Electrical characteristic curves Fig.3 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.4 Static Drain - Source On - State Resistance vs. Junction Temperature 6 Static Drain - Source On-State Resistance : R DS(on) [mw] Static Drain - Source On-State Resistance : R DS(on) [mw] V GS = V I D = 4.5A Pulsed Junction Temperature : T j [ºC] Fig.5 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(III) Static Drain - Source On-State Resistance : R DS(on) [mw] Static Drain - Source On-State Resistance : R DS(on) [mw] 7/ Rev.B

8 Electrical characteristic curves Fig.7 Static Drain - Source On - State Resistance vs. Drain Current(IV) Fig.8 Typical Capacitance vs. Drain - Source Voltage Static Drain - Source On-State Resistance : R DS(on) [mw] Capacitance : C [pf] Drain - Source Voltage : V DS [V] Fig.9 Switching Characteristics Fig.2 Dynamic Input Characteristics Switching Time : t [ns] Gate - Source Voltage : V GS [V] Total Gate Charge : Q g [nc] 8/ Rev.B

9 Electrical characteristic curves Fig.2 Source Current vs. Source Drain Voltage Source Current : I S [A] Source-Drain Voltage : V SD [V] 9/ Rev.B

10 Measurement circuits Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform / Rev.B

11 Dimensions (Unit : mm) TSMT6 e D A Q c L Lp E H E b x S A A3 e y S A A2 A S l e b2 Pattern of terminal position areas [Not a recommended pattern of soldering pads] DIM MILIMETERS INCHES MIN MAX MIN MAX A A....4 A A3.25. b c D E e HE L Lp Q x y MILIMETERS INCHES DIM MIN MAX MIN MAX b e l Dimension in mm / inches / Rev.B

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