SMF05T2G. Quad Array for ESD Protection
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1 Quad Array for ESD Protection ESD Protection Diodes with Low Clamping Voltage This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. Specification Features Low Clamping Voltage Stand Off Voltage V Low Leakage < V SC 88A Package Allows Four Separate Unidirectional Configurations IEC6 2 Level ESD Protection Pb Free Packages are Available* Mechanical Characteristics Void Free, Transfer Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications MAXIMUM RATINGS (T A = 2 C unless otherwise noted) Characteristic Symbol Value Unit Peak Power 8 X A 2 C P pk 0 W Steady State Power 1 Diode (Note 1) Thermal Resistance Junction to Ambient Above 2 C, Derate P D 38 mw R JA C/W mw/ C Maximum Junction Temperature T Jmax 10 C Operating Junction and Storage T J T stg to +10 C Temperature Range ESD Discharge IEC 2, Air Discharge IEC 2, Contact Discharge Lead Solder Temperature ( seconds duration) kv T L 2 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Only 1 diode under power. For all diodes under power, P D will be 2%. Mounted on FR board with min pad. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. See Application Note AND88/D for further description of survivability specs. SC 88A/SOT 323 CASE 19A STYLE 1 2 Anode 3 MARKING DIAGRAM = Device Marking M = One Digit Date Code = Pb Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping SMF0T1 SC 88A 00/Tape & Reel SMF0T1G SMF0T2G SC 88A (Pb Free) SC 88A (Pb Free) M 00/Tape & Reel 00/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD11/D. Semiconductor Components Industries, LLC, 09 August, 09 Rev. 1 Publication Order Number: SMF0T1/D
2 ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) Symbol I PP Parameter Maximum Reverse Peak Pulse Current I F I V C Clamping I PP V RWM Working Peak Reverse Voltage I R V BR Maximum Reverse Leakage V RWM Breakdown I T V RWM V C V BR I R I T V F V I T Test Current I F Forward Current V F Forward I F P pk Peak Power Dissipation C V R = 0 and f = MHz *See Application Note AND88/D for detailed explanations of datasheet parameters. I PP Uni Directional TVS ELECTRICAL CHARACTERISTICS Device Breakdown Voltage V 1 ma (V) Leakage Current I V RWM = V ( A) 0 V Bias (pf) Max V I F = 0 ma Max Clamping Voltage (V C I PP (Note 2) Max Clamping Voltage (V C I PP (Note 2) Min Max Max Max (V) I PP (A) V C (V) I PP (A) V C (V) V C Per IEC 2 (Note 3) SMF Figures 1 and 2 See Below 2. Non repetitive current per Figure. Derate per Figure For test procedure see Figures 3 and and Application Note AND87/D. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kv Contact per IEC 2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kv Contact per IEC 2 2
3 IEC 2 Spec. Level Test Voltage (kv) First Peak Current (A) Current at ns (A) Current at ns (A) IEC 2 Waveform I peak % % ns ns % t P = 0.7 ns to 1 ns ESD Gun TVS Figure 3. IEC 2 Spec Oscilloscope 0 Cable 0 Figure. Diagram of ESD Test Setup The following is taken from Application Note AND88/D Interpretation of Datasheet Parameters for ESD Devices. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC 2 waveform. Since the IEC 2 was written as a pass/fail spec for larger systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND87/D. % OF PEAK PULSE CURRENT 0 0 t r t P PEAK VALUE I 8 s PULSE WIDTH (t P ) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s HALF VALUE I RSM s t, TIME ( s) Figure. 8 X s Pulse Waveform 3
4 I I SMF0T1 OR TA = 2 C T A, AMBIENT TEMPERATURE ( C) Figure 6. Pulse Derating Curve TYPICAL CAPACITANCE (pf) 1 MHz FREQUENCY BIAS VOLTAGE (VOLTS) Figure 7. Capacitance I F, FORWARD CURRENT (A) pp, PEAK PULSE CURRENT (AMPS) 2. s SQUARE WAVE V F, FORWARD VOLTAGE (VOLTS) Figure 8. Forward Voltage V C, CLAMPING VOLTAGE (VOLTS) Figure 9. Clamping Voltage versus Peak Pulse Current (Reverse Direction) pp, PEAK FORWARD PULSE CURRENT (AMPS) 2. s SQUARE WAVE V C, FORWARD CLAMPING VOLTAGE (VOLTS) Figure. Clamping Voltage versus Peak Pulse Current (Forward Direction), PEAK SURGE POWER (WATTS) pk P 0 NOTE: Non Repetitive Surge t, TIME ( s) Figure 11. Pulse Width
5 PACKAGE DIMENSIONS SC 88A/SOT 33/SC LEAD PACKAGE CASE 19A 02 ISSUE J S A G B D PL 0.2 (0.008) M B M N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y1.M, CONTROLLING DIMENSION: INCH A 01 OBSOLETE. NEW STANDARD 19A 02.. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G BSC 0.6 BSC H J K N REF 0. REF S C J STYLE : PIN 1. CATHODE 2. COMMON ANODE 3. CATHODE 2. CATHODE 3. CATHODE H K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 163, Denver, Colorado 217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative SMF0T1/D
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