SESD Series Enhanced ESD Discrete TVS

Transcription

1 TVS iode Arrays (SPA iodes) SES Series Enhanced ES iode Arrays SES Series Enhanced ES iscrete TVS RoHS Pb GREEN ELV escription The SES Series Enhanced ES iscrete TVS provides ultra low capacitance unidirectional and bidirectional ES protection for the world s most challenging high speed serial interfaces. Ultra low capacitance permits excellent signal integrity on the most challenging consumer electronics interfaces, such as USB 3., HMI.0, isplayport, and V-by-One. Providing in excess of kv contact ES protection (IEC ) while maintaining extremely low leakage and dynamic resistance, offered in the industry s most popular footprints (040 and 00), the SES series sets higher standards for signal integrity and usability. Pinout Features 00FN 040 FN 0.5pF TP bidirectional 0.30pF TP unidirectional ES, IEC , ±kv contact, ±kv air Low clamping voltage of I PP =.5A (Bidirectional) (t P =8/0μs) Low profile 00 and 040 FN packages Facilitates excellent signal integrity ELV Compliant Bottom View Applications Functional Block iagram Ultra-high speed data lines USB 3., 3.0,.0 HMI.0,.4a,.3 isplayport (TM) V-by-One LVS interfaces Consumer, mobile and portable electronics Tablet PC and external storage with high speed interfaces Applications requiring high ES performance in small packages Unidirectional Bidirectional 05 Littelfuse, Inc.

2 TVS iode Arrays (SPA iodes) SES Series Enhanced ES iode Arrays Absolute Maximum Ratings Parameter Value Units I PP Peak Current (t p =8/0μs).5 A T OP Operating Temperature -55 to 5 C T STOR Storage Temperature -55 to 50 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units Storage Temperature Range -55 to 50 C Maximum Junction Temperature 50 C Maximum Lead Temperature (Soldering 0-40s) 60 C Uidirectional Electrical Characteristics - (T OP =5 C) Parameter Test Conditions Min Typ Max Units Input V R = 0V, f = 3GHz 0.30 pf Breakdown Voltage V I T =ma 8.80 V Reverse Working Voltage 7.0 V Reverse Leakage Current I V RWM =5.0V 5 na Clamping Voltage V I PP =.5A 3.0 V ES Withstand Voltage IEC (Contact) ± IEC (Air) ± kv Bidirectional Electrical Characteristics - (T OP =5 C) Parameter Test Conditions Min Typ Max Units Input V R = 0V, f = 3GHz 0.5 pf Breakdown Voltage V I T =ma 9.6 V Reverse Working Voltage 7.0 V Reverse Leakage Current I V RWM =5.0V 5 na Clamping Voltage V I PP =.5A 4.0 V ES Withstand Voltage IEC (Contact) ± IEC (Air) ± kv Insertion Loss iagram - Unidirectional Insertion Loss iagram - Bidirectional S Insertion Loss (db) S Insertion Loss (db) E+06.E+07.E+08.E+09.E+0 Frequency (Hz) E+06.E+07.E+08.E+09.E+0 Frequency (Hz) 05 Littelfuse, Inc.

3 Current (ma) Temperature Current (ma) TVS iode Arrays (SPA iodes) SES Series Enhanced ES iode Arrays evice IV Curve - Unidirectional evice IV Curve - Bidirectional Voltage (V) Voltage (V) USB3.0 Eye iagram 5.0 Gb/s, 000mV differential, CPO Compliant Test Pattern Without SES evice With SES evice Soldering Parameters Reflow Condition Pre Heat Pb Free assembly - Temperature Min (T s(min) ) 50 C - Temperature Max (T s(max) ) 00 C - Time (min to max) (t s ) secs Average ramp up rate (Liquidus) Temp (T L ) to peak 3 C/second max T S(max) to T L - Ramp-up Rate 3 C/second max - Temperature (T L ) (Liquidus) 7 C Reflow - Temperature (t L ) seconds Peak Temperature (T P ) 60 +0/-5 C Time within 5 C of actual peak Temperature (t p ) 0 40 seconds Ramp-down Rate 6 C/second max Time 5 C to peak Temperature (T P ) 8 minutes Max. o not exceed 60 C T P T L T S(max) T S(min) 5 t S Preheat Ramp-up time to peak temperature t P t L Ramp-down Time Product Characteristics of 040 FN Package Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity inches (0.0mm) Substrate material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes :. All dimensions are in millimeters. imensions include solder plating. 3. imensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VI -3. Critical Zone TL to TP 05 Littelfuse, Inc.

4 TVS iode Arrays (SPA iodes) SES Series Enhanced ES iode Arrays Package imensions 00 FN E EN VIEW M EN VIEW A 3 SIE VIEW TOP VIEW SIE VIEW BOTTOM VIEW A A P K e b L L PIN I C0.05 Inches Min Typ Max Min Typ Max A A A3 0.0 ref ref E K b L L e BSC 0.04 BSC M N O P O N Package imensions 040 FN E EN VIEW EN VIEW A 3 SIE VIEW TOP VIEW SIE VIEW BOTTOM VIEW A A K e b L PIN I 0.5 x 45 Inches Min Typ Max Min Typ Max A A A3 0.3 ref ref E K b L e 0.65 BSC 0.06 BSC M N O P M P O N 05 Littelfuse, Inc.

5 TVS iode Arrays (SPA iodes) SES Series Enhanced ES iode Arrays Part Numbering System Part Marking System SES xxxx X SES product Package FN Package : one channel x N 00xx xxx Input Capacitance 005: 0.5pF (TP) 0030: 0.30pF (TP) No Common pin irectional U: Unidirectional B: Bidirectional Breakdown Voltage 096: 9.6V (TP) 088: 8.8V ((TP) Unidirectional Bidirectional Ordering Information Part Number Package Marking Ordering Part Number Minimum Order Quantity SES00XUN FN I RF SES00XBN FN RF SES040XUN FN I RF SES040XBN FN RF Embossed Carrier Tape & Reel Specification 00 FN T B0 K0 Section - A0 0 P P P0 E F W A /-0.03 B / ø /-0 ø 0.0+/ E.75+/-0.0 F 3.50+/-0.05 K /-0.03 P /-0.0 P.00+/-0.0 P.00+/-0.05 W 8.00+/-0.0 T 0.3+/-0.0 Embossed Carrier Tape & Reel Specification 040 FN T B0 K0 Section - A0 0 P P P0 E F W A /-0.05 B0.5+/ ø ø / E.75+/-0.0 F 3.50+/-0.05 K /-0.05 P /-0.0 P.00+/-0.0 P.00+/-0.05 W 8.00+/-0.0 T 0.0+/ Littelfuse, Inc.