Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Transcription

1 Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 3. at V GS = V at V GS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY V SD (V) V DS (V) Diode Forward Voltage I F (A) 3.5 V at. A. FEATURES Halogen-free According to IEC Definition TrenchFET Power MOSFET PWM Optimized % R g Tested Compliant to RoHS Directive /95/EC APPLICATIONS Symmetrical Buck-Boost DC/DC Converter D D SO-8 S 8 D G 7 D S 3 6 D G Schottky Diode G G 4 5 D Top View Ordering Information: Si4834BDY-T-E3 (Lead (Pb)-free) Si4834BDY-T-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted Parameter Symbol s Steady State Unit Drain-Source Voltage V DS 3 V Gate-Source Voltage V GS ± Continuous Drain Current (T J = 5 C) a T A = 5 C I D T A = 7 C A Pulsed Drain Current I DM 3 Continuous Source Current (Diode Conduction) a I S.7.9 T A = 5 C Maximum Power Dissipation a.. P D W T A = 7 C.3.7 Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Notes: a. Surface Mounted on " x " FR4 board. Symbol MOSFET Schottky Typ. Max. Typ. Max. Maximum Junction-to-Ambient a t s R thja Steady State Maximum Junction-to-Foot (Drain) Steady State R thjf Unit C/W S9-869-Rev. D, 8-May-9

2 MOSFET SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. a Max. Unit Static Gate Threshold Voltage V GS(th) V DS = V GS, I D = 5 µa.8 3. V Gate-Body Leakage I GSS V DS = V, V GS = ± V ± na Zero Gate Voltage Drain Current I DSS V DS = 3 V, V GS = V Ch- Ch- V DS = 3 V, V GS = V, T J = 85 C Ch- Ch- 5 µa On-State Drain Current b I D(on) V DS = 5 V, V GS = V A V GS = V, I D = 7.5 A Drain-Source On-State Resistance b.7. R DS(on) V GS = 4.5 V, I D = 6.5 A.4.3 Ω Forward Transconductance b g fs V DS = 5 V, I D = 7.5 A 9 S Diode Forward Voltage b V SD I S = A, V GS = V Ch Ch-.75. V Dynamic a Total Gate Charge Q g 7 Gate-Source Charge Q gs V DS = 5 V, V GS = 4.5 V, I D = 7.5 A.9 nc Gate-Drain Charge Q gd.5 Gate Resistance R g Ω Turn-On Delay Time t d(on) 9 5 Rise Time t r V DD = 5 V, R L = 5 Ω 7 Turn-Off Delay Time t d(off) I D A, V GEN = V, R g = 6 Ω 9 3 Fall Time t f 9 5 ns Source-Drain Reverse Recovery Time t rr I F =.7 A, di/dt = A/µs Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 µs, duty cycle %. Ch Ch Maximum Reverse Leakage Current I rm SCHOTTKY SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit I F =. A.47.5 Forward Voltage Drop V F I F =. A, T J = 5 C.36.4 V V R = 3 V, T J = C.7 ma V R = 3 V.4. V R = - 3 V, T J = 5 C 3. Junction Capacitance C T V R = V 5 pf Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S9-869-Rev. D, 8-May-9

3 MOSFET TYPICAL CHARACTERISTICS 5 C unless otherwise noted 3 V GS = V thru 5 V 4 V I D - Drain Current (A) 5 - Drain Current (A) I D 5 T C = 5 C 5 3 V V DS - Drain-to-Source Voltage (V) Output Characteristics C - 55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics 96 C iss R DS(on) - On-Resistance (Ω).3.. V GS = 4.5 V V GS = V C - Capacitance (pf) C rss C oss I D - Drain Current (A) On-Resistance vs. Drain Current V DS - Drain-to-Source Voltage (V) Capacitance.8 - Gate-to-Source Voltage (V) V GS V DS = 5 V I D = 7.5 A R DS(on) - On-Resistance (Normalized) V GS = V I D = 7.5 A Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature S9-869-Rev. D, 8-May-9 3

4 MOSFET TYPICAL CHARACTERISTICS 5 C unless otherwise noted.6.5 I S - Source Current (A) T J = 5 C T J = 5 C - On-Resistance (Ω) R DS(on).4.3. I D = 7.5 A V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.4. I D = 5 µa 8 Variance (V) V GS(th) Power (W) T J - Temperature ( C) Threshold Voltage Time (s) Single Pulse Power, Junction-to-Ambient Limited by R DS(on) * ms I D - Drain Current (A) T C = 5 C Single Pulse ms ms s s DC. V DS - Drain-to-Source Voltage (V) * V DS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Foot 4 S9-869-Rev. D, 8-May-9

5 MOSFET TYPICAL CHARACTERISTICS 5 C unless otherwise noted Normalized Effective Transient Thermal Impedance Duty Cycle =.5. Notes: P DM.5 t t t.. Duty Cycle, D = t. Per Unit Base = R thja = 93 C/W 3. T JM - T A = P DM Z (t) thja Single Pulse 4. Surface Mounted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot S9-869-Rev. D, 8-May-9 5

6 SCHOTTKY TYPICAL CHARACTERISTICS 5 C unless otherwise noted T J = 5 C I R - Reverse Current (ma). 3 V 4 V - Forward Current (A) I F T J = 5 C T J - Temperature ( C) Reverse Current vs. Junction Temperature V F - Forward Voltage Drop (V) Forward Voltage Drop 6 C - Capacitance (pf) 8 C oss V DS - Drain-to-Source Voltage (V) Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg? S9-869-Rev. D, 8-May-9

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