FQP17P10 P-Channel QFET MOSFET V, A, 190 m

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1 FQP17P10 P-Channel QFET MOSFET V, A, 190 m Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features March A, -100 V, R DS(on) = 190 m = -10 V, I D = A Low Gate Charge (Typ. 30 nc) Low Crss (Typ. 100 pf) 100% Avalanche Tested 175 C Maximum Junction Temperature Rating D G D S TO-220 G S Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter FQP17P10 Unit S Drain-Source Voltage -100 V I D Drain Current - Continuous (T C = 25 C) A - Continuous (T C = 100 C) A I DM Drain Current - Pulsed (Note 1) -66 A S Gate-Source Voltage 30 V E AS Single Pulsed Avalanche Energy (Note 2) 580 mj I AR Avalanche Current (Note 1) A E AR Repetitive Avalanche Energy (Note 1) 10 mj dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns P D Power Dissipation (T C = 25 C) 100 W - Derate above 25 C 0.67 W/ C T J, T STG Operating and Storage Temperature Range -55 to +175 C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C Thermal Characteristics Symbol Parameter FQP17P10 Unit R JC Thermal Resistance, Junction-to-Case, Max. 1.5 C/W R CS Thermal Resistance, Case-to-Sink, Typ. 0.5 C/W R JA Thermal Resistance, Junction-to-Ambient, Max C/W 2002 Fairchild Semiconductor Corporation 1 ww.fairchildsemi.com

2 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = -250 A V BS Breakdown Voltage Temperature / T J Coefficient I D = -250 A, Referenced to 25 C V/ C I DSS = -100 V, = 0 V A Zero Gate Voltage Drain Current = -80 V, T C = 150 C A I GSSF Gate-Body Leakage Current, Forward = -30 V, = 0 V na I GSSR Gate-Body Leakage Current, Reverse = 30 V, = 0 V na On Characteristics (th) Gate Threshold Voltage =, I D = -250 A V R DS(on) Static Drain-Source On-Resistance = -10 V, I D = A g FS Forward Transconductance = -40 V, I D = A S Dynamic Characteristics C iss Input Capacitance = -25 V, = 0 V, pf C oss Output Capacitance f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns = -50 V, I D = A, t r Turn-On Rise Time R G = ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4) ns Q g Total Gate Charge = -80 V, I D = A, nc Q gs Gate-Source Charge = -10 V nc Q gd Gate-Drain Charge (Note 4) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = 0 V, I S = A V t rr Reverse Recovery Time = 0 V, I S = A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/ s C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 3.2mH, I AS = -16.5A, = -25V, R G = 25 Starting T J = 25 C 3. I SD -16.5A, di/dt 300A/ s, BS, Starting T J = 25 C 4. Essentially independent of operating temperature 2002 Fairchild Semiconductor Corporation 2 ww.fairchildsemi.com

3 Typical Characteristics , Drain-Source Voltage [V] 0.7 Top : V V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V μ s Pulse Test 2. T C = 25 Figure 1. On-Region Characteristics , Gate-Source Voltage [V] 1. = -40V μ s Pulse Test Figure 2. Transfer Characteristics R DS(on) [ ], Drain-Source On-Resistance = - 10V = - 20V Note : T J = 25 R, Reverse Drain Current [A] = 0V μ s Pulse Test V SD, Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance [pf] C oss C iss C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = 0 V 2. f = 1 MHz -, Gate-Source Voltage [V] = -20V = -50V = -80V Note : I D = A , Drain-Source Voltage [V] Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Dimensions in Millimeters 2002 Fairchild Semiconductor Corporation 3 ww.fairchildsemi.com

4 Typical Characteristics (Continued) -BS, (Normalized) Drain-Source Breakdown Voltage T J, Junction Temperature [ o C] Operation in This Area is Limited by R DS(on) 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse , Drain-Source Voltage [V] DC 1. = 0 V 2. I D = -250 μa Figure 7. Breakdown Voltage Variation vs. Temperature 100 s 1 ms 10 ms R DS(ON), (Normalized) Drain-Source On-Resistance T J, Junction Temperature [ o C] T C, Case Temperature [ ] 1. = -10 V 2. I D = A Figure 8. On-Resistance Variation vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θ JC (t), Thermal Response D= single pulse N otes : 1. Z θ JC (t) = 1.5 /W M ax. 2. D uty F actor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t t 1, Square W ave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 2002 Fairchild Semiconductor Corporation 4 ww.fairchildsemi.com

5 12V 200nF -3mA 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT -10V Q gs DUT Resistive Switching Test Circuit & Waveforms Q g Q gd Charge R L t on t off t d(on) t r t d(off) tf R G 10% -10V DUT 90% Unclamped Inductive Switching Test Circuit & Waveforms L E AS = LI 2 2 AS BS BS - I D t p Time R G I D (t) (t) -10V DUT I AS t p BS Dimensions in Millimeters 2002 Fairchild Semiconductor Corporation 5 ww.fairchildsemi.com

6 Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT _ I SD Driver R G Compliment of DUT (N-Channel) L dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 10V I SD ( DUT ) ( DUT ) Body Diode Reverse Current I RM di/dt I FM, Body Diode Forward Current V SD Body Diode Forward Voltage Drop Body Diode Recovery dv/dt 2002 Fairchild Semiconductor Corporation 6 ww.fairchildsemi.com

7 Package Dimensions TO-220 Dimensions in Millimeters 2002 Fairchild Semiconductor Corporation 7 ww.fairchildsemi.com

8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM Green Bridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR tm PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary Formative / In Design First Production 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. No Identification Needed Obsolete Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only Fairchild Semiconductor Corporation 8 ww.fairchildsemi.com Rev. I64

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