OptiMOS 3 M-Series Power-MOSFET
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1 BSC25N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% avalanche tested N-channel Product Summary V DS 3 V R DS(on),max V GS =1 V 2.5 mω V GS =4.5 V 3 I D 1 A PG-TDSON-8 Very low on-resistance R V GS =4.5 V Excellent gate charge x R DS(on) product (FOM) Qualified according to JEDEC 1) for target applications Superior thermal resistance Pb-free plating; RoHS compliant Halogen-free according to IEC Type Package Marking BSC25N3MS G PG-TDSON-8 25N3MS Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS =1 V, T C =25 C 1 A V GS =1 V, T C =1 C 93 V GS =4.5 V, T C =25 C 1 V GS =4.5 V, T C =1 C 85 V GS =4.5 V, T A =25 C, R thja =5 K/W 2) 23 Pulsed drain current 3) I D,pulse T C =25 C 4 Avalanche current, single pulse 4) I AS T C =25 C 5 Avalanche energy, single pulse E AS I D =5 A, R GS =25 Ω 135 mj Gate source voltage V GS ±2 V 1) J-STD2 and JESD22 Rev page
2 BSC25N3MS G Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Power dissipation P tot T C =25 C 83 W T A =25 C, R thja =5 K/W 2) 2.5 Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC /15/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc bottom K/W top Device on PCB R thja 6 cm 2 cooling area 2) Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =1 ma V Gate threshold voltage V GS(th) V DS =V GS, I D =25 µa 1-2 Zero gate voltage drain current I DSS V DS =3 V, V GS = V, T j =25 C µa V DS =3 V, V GS = V, T j =125 C Gate-source leakage current I GSS V GS =16 V, V DS = V na Drain-source on-state resistance R DS(on) V GS =4.5 V, I D =3 A mω V GS =1 V, I D =3 A Gate resistance R G Ω Transconductance g fs V DS >2 I D R DS(on)max, I D =3 A S 2) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev page
3 BSC25N3MS G Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss pf Output capacitance C oss V GS = V, V DS =15 V, f =1 MHz Reverse transfer capacitance C rss Turn-on delay time t d(on) ns Rise time t r V DD =15 V, V GS =4.5 V, Turn-off delay time t d(off) I D =3 A, R G =1 Ω Fall time t f Gate Charge Characteristics 5) Gate to source charge Q gs nc Gate charge at threshold Q g(th) Gate to drain charge Q gd V DD =15 V, I D =3 A, Switching charge Q sw V GS = to 4.5 V Gate charge total Q g Gate plateau voltage V plateau V Gate charge total Q g V DD =15 V, I D =3 A, V GS = to 1 V Gate charge total, sync. FET Q g(sync) V DS =.1 V, V GS = to 4.5 V nc Output charge Q oss V DD =15 V, V GS = V Reverse Diode Diode continuous forward current I S A T C =25 C Diode pulse current I S,pulse Diode forward voltage V SD V GS = V, I F =3 A, T j =25 C V Reverse recovery charge Q rr V R =15 V, I F =I S, di F /dt =4 A/µs nc 4) See figure 13 for more detailed information 5) See figure 16 for gate charge parameter definition Rev page
4 1 BSC25N3MS G 1 Power dissipation 2 Drain current P tot =f(t C ) I D =f(t C ) parameter: V GS V 1 V P tot [W] T C [ C] T C [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T C =25 C; D = Z thjc =f(t p ) parameter: t p parameter: D =t p /T 1 3 limited by on-state resistance 1 µs 1 1 µs µs DC ms 1 ms Z thjc [K/W] single pulse V DS [V] t p [s] 1 Rev page
5 5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =25 C R DS(on) =f(i D ); T j =25 C BSC25N3MS G parameter: V GS parameter: V GS V 4 V V 1 V V V 3.2 V R DS(on) [mω] V 3.5 V 4 V 4.5 V 5 V 6 V 1 V 3 V V V DS [V] Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS >2 I D R DS(on)max g fs =f(i D ); T j =25 C parameter: T j g fs [S] C 25 C V GS [V] Rev page
6 1 1 1 BSC25N3MS G 9 Drain-source on-state resistance 1 Typ. gate threshold voltage R DS(on) =f(t j ); I D =3 A; V GS =1 V V GS(th) =f(t j ); V GS =V DS ; I D =25 µa R DS(on) [mω] % typ V GS(th) [V] T j [ C] T j [ C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(v DS ); V GS = V; f =1 MHz I F =f(v SD ) parameter: T j Ciss 25 C 15 C, 98% Coss C [pf] I F [A] 15 C 25 C, 98% Crss V DS [V] V SD [V] Rev page
7 BSC25N3MS G 13 Avalanche characteristics 14 Typ. gate charge I AS =f(t AV ); R GS =25 Ω parameter: T j(start) 1 V GS =f(q gate ); I D =3 A pulsed parameter: V DD V 25 C 1 6 V 1 C 8 24 V 125 C I AV [A] 1 V GS [V] t AV [µs] Q gate [nc] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) =f(t j ); I D =1 ma 34 V GS 32 Q g 3 V BR(DSS) [V] V gs(th) Q g(th) Q sw Q gate T j [ C] Q gs Q gd Rev page
8 BSC25N3MS G Package Outline PG-TDSON-8 PG-TDSON-8: Outline Footprint Dimensions in mm Rev page
9 BSC25N3MS G Package Outline PG-TDSON-8: Tape Dimensions in mm Rev page
10 BSC25N3MS G Published by Infineon Technologies AG Munich, Germany 28 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev page
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