FQP10N60C / FQPF10N60C 600V N-Channel MOSFET

Transcription

1 FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features 9.5A, 600V, R DS(on) = GS = 10 V Low gate charge ( typical 44 nc) Low Crss ( typical 18 pf) Fast switching 100% avalanche tested Improved dv/dt capability G D S TO-220 FQP Series GD S Description April 2007 QFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-220F FQPF Series G S D Absolute Maximum Ratings Symbol Parameter FQP10N60C FQPF10N60C Units S Drain-Source Voltage 600 V Drain Current - Continuous (T C = 25 C) * A - Continuous (T C = 100 C) * A M Drain Current - Pulsed (Note 1) * A V GSS Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 700 mj I AR Avalanche Current (Note 1) 9.5 A E AR Repetitive Avalanche Energy (Note 1) 15.6 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 C) W - Derate above 25 C W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 300 C 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP10N60C FQPF10N60C Units R θjc Thermal Resistance, Junction-to-Case C/W R θcs Thermal Resistance, Case-to-Sink Typ C/W R θja Thermal Resistance, Junction-to-Ambient C/W 2007 Fairchild Semiconductor Corporation 1

2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FQP10N60C FQP10N60C TO FQPF10N60C FQPF10N60C TO-220F Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage V GS = 0 V, = 250 µa V BS / T J Breakdown Voltage Temperature Coefficient = 250 µa, Referenced to 25 C V/ C SS Zero Gate Voltage Drain Current = 600 V, V GS = 0 V µa = 480 V, T C = 125 C µa I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, = 0 V na I GSSR Gate-Body Leakage Current, Reverse V GS = -30 V, = 0 V na On Characteristics V GS(th) Gate Threshold Voltage = V GS, = 250 µa V R DS(on) Static Drain-Source On-Resistance V GS = 10 V, = 4.75 A Ω g FS Forward Transconductance = 40 V, = 4.75 A (Note 4) S Dynamic Characteristics C iss Input Capacitance = 25 V, V GS = 0 V, pf C oss Output Capacitance f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time V DD = 300 V, = 9.5A, ns t r Turn-On Rise Time R G = 25 Ω ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4, 5) ns Q g Total Gate Charge = 480 V, = 9.5A, nc Q gs Gate-Source Charge V GS = 10 V nc Q gd Gate-Drain Charge (Note 4, 5) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 9.5 A V t rr Reverse Recovery Time V GS = 0 V, I S = 9.5 A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 14.2mH, I AS = 9.5 A, V DD = 50V, R G = 25 Ω, Starting T J = 25 C 3. I SD 9.5A, di/dt 200A/µs, V DD BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature 2

3 Typical Performance Characteristics Figure 1. On-Region Characteristics 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 10 1, Drain-Source Voltage [V] µs Pulse Test 2. T C = 25 C Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.0 Figure 2. Transfer Characteristics C 25 C -55 C 1. = 40V µs Pulse Test V GS, Gate-Source Voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue R DS(ON) [Ω], Drain-Source On-Resistance V GS = 10V V GS = 20V * Note : T J = 25 C R, Reverse Drain Current [A] C 25 C 1. V GS = 0V µs Pulse Test V SD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3000 C iss = C gs + C gd (C ds = shorted) 12 Capacitance [pf] C iss C oss C rss C oss = C ds + C gd C rss = C gd , Drain-Source Voltage [V] * Notes ; 1. V GS = 0 V 2. f = 1 MHz V GS, Gate-Source Voltage [V] = 300V = 480V = 120V * Note : = 9.5A Q G, Total Gate Charge [nc] 3

4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature BS, (Normalized) Drain-Source Breakdown Voltage V GS = 0 V 2. = 250µA T J, Junction Temperature [ C] T J, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area for FQP10N60C for FQPF10N60C Operation in This Area is Limited by R DS(on) 1 ms 10 ms 100 ms DC 1. T C = 25 C 2. T J = 150 C 3. Single Pulse 100 µs 10 µs , Drain-Source Voltage [V] R DS(ON), (Normalized) Drain-Source On-Resistance Operation in This Area is Limited by R DS(on) 1. T C = 25 C 2. T J = 150 C 3. Single Pulse 1. V GS = 10 V 2. = 4.75 A 10 µs 100 µs 1 ms 10 ms 100 ms DC , Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature T C, Case Temperature [ C] 4

5 Typical Performance Characteristics (Continued) Figure Transient Thermal Response Curve for FQP10N60C Z θjc (t), Thermal Response 10-2 D= single pulse * N otes : 1. Z θ JC (t) = 0.8 C/W Max. 2. D uty F actor, D = t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) t 1, Square W ave Pulse Duration [sec] Figure Transient Thermal Response Curve for FQPF10N60C P DM t 1 t 2 D=0.5 Z θjc (t), Thermal Response single pulse * N otes : 1. Z θ JC (t) = 2.5 C /W Max. 2. D uty F actor, D = t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t t 1, S quare W ave P ulse D uration [sec] 5

6 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6

7 Peak Diode Recovery dv/dt Test Circuit & Waveforms 7

8 Mechanical Dimensions (1.70) ± ± ±0.10 (1.46) (1.00) 1.27 ± ±0.20 (8.70) ø3.60 ±0.10 (45 ) (3.00) (3.70) 1.52 ±0.10 TO ± ± ± MAX ± TYP [2.54 ±0.20] 0.80 ± TYP [2.54 ±0.20] ± ±0.20 Dimensions in Millimeters 8

9 Mechanical Dimensions (Continued) ± ±0.10 TO-220F ±0.20 ø3.18 ± ±0.20 (7.00) (0.70) 6.68 ±0.20 (1.00x45 ) ± ±0.30 MAX ±0.10 (30 ) 0.35 ±0.10 # ± TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ± ±0.20 Dimensions in Millimeters 9

10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Across the board. Around the world. ActiveArray Bottomless Build it Now CoolFET CROSSVOLT CTL Current Transfer Logic DOME E 2 CMOS EcoSPARK EnSigna FACT Quiet Series FACT FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC i-lo ImpliedDisconnect IntelliMAX ISOPLANAR MICROCOUPLER MicroPak MICROWIRE Motion-SPM MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN PDP-SPM POP Power220 Power247 PowerEdge PowerSaver Power-SPM PowerTrench Programmable Active Droop QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect ScalarPump SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TCM The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyWire TruTranslation μserdes UHC UniFET VCX Wire DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I Fairchild Semiconductor Corporation