N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packages. Features. Description.

Transcription

1 STN1NK60Z, STQ1NK60ZR N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packages Features Datasheet - production data Order codes V DS R DS(on)max I D P TOT SOT-223 TO-92 (Ammopak) STN1NK60Z 600 V 15 Ω 0.3 A 3.3 W STQ1NK60ZR-AP 3 W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized ESD improved capability Zener-protected Figure 1. Internal schematic diagram D(2,4) Applications Switching applications Description G(1) S(3) AM01476v1 These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH technology, achieved through optimization of ST's well established strip-based PowerMESH layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STN1NK60Z 1NK60Z SOT-223 Tape and reel STQ1NK60ZR-AP 1NK60ZR TO-92 Ammopak July 2014 DocID9509 Rev 14 1/18 This is information on a product in full production.

2 Contents STN1NK60Z, STQ1NK60ZR Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data SOT-223, STN1NK60Z TO-92 ammopack, STQ1NK60ZR-AP Packaging mechanical data Revision history /18 DocID9509 Rev 14

3 STN1NK60Z, STQ1NK60ZR Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter SOT-223 Value TO-92 Unit V DS Drain-source voltage 600 V V GS Gate-source voltage ± 30 V I D Drain current (continuous) at T C = 25 C 0.3 A I D Drain current (continuous) at T C =100 C A I (1) DM Drain current (pulsed) 1.2 A P TOT Total dissipation at T C = 25 C W ESD dv/dt (2) Derating factor W/ C Human body model C=100 pf, R=1.5 kω 1. Pulse width limited by safe operating area 2. I SD 0.3 A, di/dt 200 A/µs, V DD = 80%V (BR)DSS 800 V Peak diode recovery voltage slope 4.5 V/ns T J Operating junction temperature C - 55 to 150 T stg Storage temperature C Table 3. Thermal resistance Symbol Parameter SOT-223 Value TO-92 Unit R thj-amb Thermal resistance junction-ambient max 38 (1) 120 C/W R thj-lead Thermal resistance junction-lead max 40 C/W 1. When mounted on 1 inch² FR-4 board, 2 Oz Cu, t < 30 s. Table 4. Avalanche data Symbol Parameter Value Unit I AR E AS Avalanche current, repetitive or not repetitive (pulse width limited by T j max ) Single pulse avalanche energy (starting T J = 25 C, I D = I AR, V DD = 50 V) 0.3 A 60 mj DocID9509 Rev 14 3/18 18

4 Electrical characteristics STN1NK60Z, STQ1NK60ZR 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero gate voltage drain current V GS = 0, I D = 1 ma 600 V V GS = 0, V DS =600 V 1 µa V GS = 0, V DS =600 V, T C = 125 C 50 µa I GSS Gate body leakage current V DS = 0, V GS = ± 20 V ±10 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 50 µa V R DS(on) Static drain-source on- resistance V GS = 10 V, I D = 0.4 A Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g fs (1) Forward transconductance V DS =15 V, I D = 0.4 A S C iss Input capacitance - 94 pf C oss Output capacitance V GS = 0, V DS = 25 V, pf C rss f=1 MHz Reverse transfer capacitance pf (2) Equivalent output C oss eq. capacitance V GS = 0, V DS = 0 to 480 V - 11 pf Q g Total gate charge V DD =480 V, I D = 0.8 A nc Q gs Gate-source charge V GS =10 V - 1 nc Q gd Gate-drain charge (see Figure 19) nc 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS 4/18 DocID9509 Rev 14

5 STN1NK60Z, STQ1NK60ZR Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns t r Rise time V DD = 300 V, I D = 0.4 A, ns t d(off) Turn-off delay time R G = 4.7 Ω, V GS = 10 V (see Figure 18) ns t f Fall time ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current A I SDM (1) V SD (2) Source-drain current (pulsed) A Forward on voltage V GS =0, I SD = 0.8 A V t rr Reverse recovery time I SD = 0.8 A, ns Q rr Reverse recovery charge di/dt = 100 A/µs, nc I RRM Reverse recovery current V DD = 20 V A t rr Reverse recovery time I SD = 0.8 A, ns Q rr Reverse recovery charge di/dt = 100 A/µs, nc I RRM Reverse recovery current V DD = 20V, Tj = 150 C A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 9. Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max. Unit V (BR)GSO Gate-source breakdown voltage I GS = ± 1mA, I D = V The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. DocID9509 Rev 14 5/18 18

6 Electrical characteristics STN1NK60Z, STQ1NK60ZR 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for SOT-223 Figure 3. Thermal impedance for SOT-223 K δ=0.5 SOT Single pulse 0.01 t < 30s Zthj-pcb=K*Rthj-pcb, Rthj-pcb=62.5 C/W tp(s) Figure 4. Safe operating area for TO-92 Figure 5. Thermal impedance for TO-92 Figure 6. Output characteristics Figure 7. Transfer characteristics 6/18 DocID9509 Rev 14

7 STN1NK60Z, STQ1NK60ZR Electrical characteristics Figure 8. Transconductance Figure 9. Static drain-source on-resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on-resistance vs temperature DocID9509 Rev 14 7/18 18

8 Electrical characteristics STN1NK60Z, STQ1NK60ZR Figure 14. Source-drain diode forward characteristics Figure 15. Normalized V BR(DSS) vs temperature BR(DSS) Figure 16. Maximum avalanche energy vs temperature Figure 17. Max Id current vs Tc 8/18 DocID9509 Rev 14

9 STN1NK60Z, STQ1NK60ZR Test circuits 3 Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load switching and diode recovery times Figure 21. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=100μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 DocID9509 Rev 14 9/18 18

10 Package mechanical data STN1NK60Z, STQ1NK60ZR 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 10/18 DocID9509 Rev 14

11 STN1NK60Z, STQ1NK60ZR Package mechanical data Figure 24. SOT-223 mechanical data drawing _N Table 10. SOT-223 mechanical data Dim. mm Min. Typ. Max. A 1.80 A B B c D e e E H V 10 DocID9509 Rev 14 11/18 18

12 Package mechanical data STN1NK60Z, STQ1NK60ZR Figure 25. SOT-223 footprint (dimensions in mm) _N_footprint 12/18 DocID9509 Rev 14

13 STN1NK60Z, STQ1NK60ZR Package mechanical data 4.1 SOT-223, STN1NK60Z 4.2 TO-92 ammopack, STQ1NK60ZR-AP Figure 26. TO-92 ammopack mechanical data drawing A1 T2 T T1 H1 delta H H H0 L H3 d W2 l1 F1 F2 W0 W1 W P2 F3 P0 D0 t S_Rev_U DocID9509 Rev 14 13/18 18

14 Package mechanical data STN1NK60Z, STQ1NK60ZR Table 11. TO-92 ammopack mechanical data Dim. mm Min. Typ. Max. A T 3.80 T T d P P F1, F F delta H W W W W H H H H D t 0.90 L l delta P /18 DocID9509 Rev 14

15 STN1NK60Z, STQ1NK60ZR Packaging mechanical data 5 Packaging mechanical data Figure 27. Tape for SOT-223 (dimensions are in mm) *Cumulative tolerance of 10 sprocket holes is ±0.20 mm Figure 28. Reel for TO-223 (dimensions are in mm) DocID9509 Rev 14 15/18 18

16 Packaging mechanical data STN1NK60Z, STQ1NK60ZR Table 12. SOT-223 tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Typ. Max. Min. Max. A A 180 B N 60 K W F W E W W P Base quantity pcs 1000 P Bulk quantity pcs 1000 P T Dφ D1φ /18 DocID9509 Rev 14

17 STN1NK60Z, STQ1NK60ZR Revision history 6 Revision history Table 13. Revision history Date Revision Changes 19-Mar First electronic version 15-May Removed DPAK 09-Jun Final datasheet 17-Nov Inserted SOT Feb Modified Figure Sep Inserted ecopack indication 22-Feb The document has been reformatted 01-Jun Order code table on first page has been updated 19-Jul Table 1: Device summary has been updated 05-Jan Jun Corrected Figure 2: Safe operating area for SOT-223 and Figure 3: Thermal impedance for SOT-223 Updated title. Updated derating factor in Table 2: Absolute maximum ratings. Updated Section 4: Package mechanical data. Minor text changes. 04-Jul Updated Section 3: Test circuits. DocID9509 Rev 14 17/18 18

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