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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 FODM2 Series, FODM24, FODM27, FODM275 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers Features More than 5 mm Creepage/Clearance Compact 4-Pin Surface Mount Package (2.4 mm Maximum Standoff Height) Current Transfer Ratio in Selected Groups: DC Input: FODM2: 5 6% FODM2A: 3% FODM2B: 5 5% FODM2C: 2% FODM24: % MIN FODM27: 5 3% AC Input: FODM275: 5 3% Safety and Regulatory Approvals: UL577, 3,75 VAC RMS for Minute DIN-EN/IEC , 565 V Peak Working Insulation Voltage Functional Block Diagram ANODE CATHODE 2 4 COLLECTOR 3 EMITTER Equivalent Circuit FODM2, FODM24, FODM27 ANODE CATHODE 2 Equivalent Circuit FODM275 Figure. Schematic 4 COLLECTOR 3 EMITTER Applications Digital Logic Inputs Microprocessor Inputs Power Supply Monitor Twisted Pair Line Receiver Telephone Line Receiver Description November 25 The FODM2 series, FODM24, and FODM27 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM275 consists of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. Figure 2. Package Outlines FODM2 Series, FODM24, FODM27, FODM275 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers 26 Fairchild Semiconductor Corporation FODM2 Series, FODM24, FODM27, FODM275 Rev..7

3 Safety and Insulation Ratings As per DIN EN/IEC , this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Note:. Safety limit values maximum values allowed in the event of a failure. Characteristics Installation Classifications per DIN VDE < 5 V RMS I IV /.89 Table, For Rated Mains Voltage < 3 V RMS I III Climatic Classification 4//2 Pollution Degree (DIN VDE /.89) 2 Comparative Tracking Index 75 Symbol Parameter Value Unit V PR Input-to-Output Test Voltage, Method A, V IORM x.6 = V PR, Type and Sample Test with t m = s, Partial Discharge < 5 pc 94 V peak Input-to-Output Test Voltage, Method B, V IORM x.875 = V PR, % Production Test with t m = s, Partial Discharge < 5 pc 6 V peak V IORM Maximum Working Insulation Voltage 565 V peak V IOTM Highest Allowable Over-Voltage 6 V peak External Creepage 5 mm External Clearance 5 mm DTI Distance Through Insulation (Insulation Thickness).4 mm T S Case Temperature () 5 C I S,INPUT Input Current () 2 ma P S,OUTPUT Output Power () 3 mw R IO Insulation Resistance at T S, V IO = 5 V () > 9 Ω FODM2 Series, FODM24, FODM27, FODM275 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers 26 Fairchild Semiconductor Corporation FODM2 Series, FODM24, FODM27, FODM275 Rev..7 2

4 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. T A = 25 C Unless otherwise specified. Symbol Parameter Value Unit TOTAL PACKAGE T STG Storage Temperature -4 to +25 C T OPR Operating Temperature -4 to + C T J Junction Temperature -4 to +25 C T SOL Lead Solder Temperature 26 for sec C EMITTER I F (avg) Continuous Forward Current 5 ma I F (pk) Peak Forward Current ( µs pulse, 3 pps.) A V R Reverse Voltage 6 V Power Dissipation 7 mw P D Derate linearly (Above 75 C).4 mw/ C DETECTOR I C Continuous Collector Current 8 ma V CEO Collector-Emitter Voltage FODM2 Series, FODM24 8 FODM27, FODM275 4 V V ECO Emitter-Collector Voltage 6 V Power Dissipation 5 mw P D Derate linearly (Above 8 C) 3.27 mw/ C FODM2 Series, FODM24, FODM27, FODM275 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers 26 Fairchild Semiconductor Corporation FODM2 Series, FODM24, FODM27, FODM275 Rev..7 3

5 Electrical Characteristics T A = 25 C unless otherwise specified. Symbol Parameter Device Test Conditions Min. Typ. Max. Unit INDIVIDUAL COMPONENT CHARACTERISTICS Emitter V F I R Detector BV CEO Forward Voltage Reverse Current Collector-Emitter Breakdown Voltage FODM2 Series, FODM24 FODM27 FODM275 FODM2 Series, FODM24, FODM27 FODM2 Series, FODM24 FODM27, FODM275 I F = ma..3 I F = 5 ma I F = ±5 ma Note: 2. Steady state isolation voltage, V ISO, is an internal device dielectric breakdown rating. For this test, pins and 2 are common, and pins 3 and 4 are common..4 V R = 5 V 5 µa I C = ma, I F = Emitter-Collector BV ECO All I Breakdown Voltage E = µa, I F = 7 V I CEO Collector Dark Current All V CE = 4 V, I F = na C CE Capacitance All V CE = V, f = MHz pf TRANSFER CHARACTERISTICS CTR V CE(SAT) DC Current Transfer Ratio FODM27 I F = 5 ma, V CE = 5 V 5 3 FODM275 I F = ±5 ma, V CE = 5 V 5 3 FODM2 5 6 FODM2A 3 I F = 5 ma, V CE = 5 V FODM2B 5 5 FODM2C 2 I F = ma, V CE =.5 V 2 FODM24 I F =.5 ma, V CE =.5 V 5 CTR Symmetry FODM275 I F = ±5 ma, V CE = 5 V.3 3. Saturation Voltage t r Rise Time (Non-Saturated) t f Fall Time (Non-Saturated) ISOLATION CHARACTERISTICS V ISO FODM2 Series I F = 8 ma, I C = 2.4 ma.4 FODM24 I F = ma, I C =.5 ma.4 FODM27 I F = ma, I C = 2 ma.3 FODM275 I F = ± ma, I C = 2 ma.3 All All I C = 2 ma, V CE = 5 V, R L = Ω I C = 2 ma, V CE = 5 V, R L = Ω 8 4 V V % V 3 µs 3 µs Steady State Isolation Voltage (2) All minute 375 VAC RMS FODM2 Series, FODM24, FODM27, FODM275 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers 26 Fairchild Semiconductor Corporation FODM2 Series, FODM24, FODM27, FODM275 Rev..7 4

6 Typical Performance Curves T A = 25 C unless otherwise specified. I F - Forward Current (ma) CTR Current Transfer Ratio (%) I C - Collector Current (ma) T A = o C 7 o C 25 o C o C -4 o C V F - Forward Voltage (V) Fig. 3 Forward Current vs. Forward Voltage. I F - Forward Current (ma) Fig. 5 Current Transfer Ratio vs. Forward Current (FODM2/27/275). T A = 25 o C V CE = 5V I F = 25mA I F = 5mA I F = ma I F =.5mA V CE = 5V V CE = V I F = ma Fig. 7 Collector Current vs. Ambient Temperature (FODM2/27/275) V CE(sat) - Collector-Emitter Saturation Voltage(V) I C - Collector Current (ma) I C - Collector Current (ma) I F = 8mA I C = 2.4mA I F = ma I C = 2mA Fig. 4 Collector-Emitter Saturation Voltage vs. Ambient Temperature (FODM2/27/275) T A = 25 o C V CE = V V CE = 5V.. I F - Forward Current (ma) Fig. 6 Collector Current vs. Forward Current (FODM2/27/275) T A = 25 o C I F = 2mA I F = 3mA I F = 4mA I F = ma I F = 5mA I F = 5mA I F = ma V CE - Collector-Emitter Voltage (V) Fig. 8 Collector Current vs. Collector-Emitter Voltage (FODM2/27/275) FODM2 Series, FODM24, FODM27, FODM275 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers 26 Fairchild Semiconductor Corporation FODM2 Series, FODM24, FODM27, FODM275 Rev..7 5

7 Typical Performance Curves (Continued) T A = 25 C unless otherwise specified. I CEO - Collector Dark Current (na) Switching Time (μs) CTR Current Transfer Ratio (%) V CE = 4V Fig 9. Collector Dark Current vs. Ambient Temperature (FODM2/27/275) R L - Load Resistance (kω) Fig. Switching Time vs. Load Resistance (FODM2/27/275) V CC = 5V T A = 25 o C T A = 25 C V CE =.5V I F = 5mA t OFF t ON I F = 6mA. I F - Forward Current (ma) Fig. 3 Current Transfer Ratio vs. Forward Current (FODM24) t S CTR Normalized Current Transfer Ratio (%) V CE(sat) - Collector-Emitter Saturation Voltage(V) I C - Collector Current (ma) I F = 5mA V CE = 5V Normalized to T A = 25 o C Fig. Normalized Current Transfer Ratio vs. Ambient Temperature (FODM2/27/275) I F = ma I C =.5mA Fig. 2 Collector-Emitter Saturation Voltage vs. Ambient Temperature (FODM24). T A = 25 C V CE =.5V.. I F - Forward Current (ma) Fig 4. Collector Current vs. Forward Current (FODM24) FODM2 Series, FODM24, FODM27, FODM275 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers 26 Fairchild Semiconductor Corporation FODM2 Series, FODM24, FODM27, FODM275 Rev..7 6

8 Typical Performance Curves (Continued) T A = 25 C unless otherwise specified. I CEO - Collector Dark Current (na) I C - Collector Current (ma) Fig 5. Collector Current vs. Ambient Temperature (FODM24) V CE =.5V V CE = 4V I F = 5mA I F = 2mA I F = ma I F =.5mA I F = ma Fig. 7 Collector Dark Current vs. Ambient Temperature (FODM24) Switching Time (μs) V CC = 5V I F = ma T A = 25 C CTR Normalized Current Transfer Ratio (%) t OFF I C - Collector Current (ma) T A = 25 o C I F = ma I F = 5mA I F = 2mA I F = ma I F =.5mA V CE - Collector-Emitter Voltage (V) Fig. 6 Collector Current vs. Collector-Emitter Voltage (FODM24) R L - Load Resistance (kω) I F = ma, V CE =.5V t S t ON Fig. 9 Switching Time vs. Load Resistance (FODM24) Normalized to T A = 25 C Fig. 8 Normalized Current Transfer Ratio vs. Ambient Temperature (FODM24) FODM2 Series, FODM24, FODM27, FODM275 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers 26 Fairchild Semiconductor Corporation FODM2 Series, FODM24, FODM27, FODM275 Rev..7 7

9 Reflow Profile Temperature ( C) TP TL Tsmax Tsmin Max. Ramp-up Rate = 3 C/S Max. Ramp-down Rate = 6 C/S Preheat Area 2 Profile Freature Time 25 C to Peak Time (seconds) Pb-Free Assembly Profile Temperature Min. (Tsmin) 5 C Temperature Max. (Tsmax) 2 C Time (t S ) from (Tsmin to Tsmax) 6 2 seconds Ramp-up Rate (t L to t P ) 3 C/second max. Liquidous Temperature (T L ) 27 C Time (t L ) Maintained Above (T L ) 6 5 seconds Peak Body Package Temperature 26 C + C / 5 C Time (t P ) within 5 C of 26 C 3 seconds Ramp-down Rate (T P to T L ) 6 C/second max. Time 25 C to Peak Temperature 8 minutes max. ts tl tp FODM2 Series, FODM24, FODM27, FODM275 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers 26 Fairchild Semiconductor Corporation FODM2 Series, FODM24, FODM27, FODM275 Rev..7 8

10 Ordering Information Part Number Package Packing Method FODM2 Full Pitch Mini-Flat 4-Pin Tube ( units) FODM2R2 Full Pitch Mini-Flat 4-Pin Tape and Reel (25 Units) FODM2V Full Pitch Mini-Flat 4-Pin, DIN EN/IEC Option Tube ( Units) FODM2R2V Full Pitch Mini-Flat 4-Pin, DIN EN/IEC Option Tape and Reel (25 Units) Note: The product orderable part number system listed in this table also applies to the FODM2A, FODM2B, FODM2C, FODM24, FODM27, and FODM275 products. Marking Information Table. Top Mark Definitions 3 4 Figure 2. Top Mark Fairchild Logo 2 Device Number 3 DIN EN/IEC Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., 5 5 Digit Work Week, Ranging from to 53 6 Assembly Package Code 5 2 V X YY R 2 6 FODM2 Series, FODM24, FODM27, FODM275 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers 26 Fairchild Semiconductor Corporation FODM2 Series, FODM24, FODM27, FODM275 Rev..7 9

11 Carrier Tape Specifications K t W d Tape Width Tape Thickness Sprocket Hole Pitch Sprocket Hole Dia. Sprocket Hole Location Pocket Location Pocket Pitch Pocket Dimension Pocket Hole Dia. Cover Tape Width Cover Tape Thickness Max. Component Rotation or Tilt Devices Per Reel Reel Diameter P 2.54 Pitch Description Symbol Dimensions W t P E F P A B D K D 2 W A P P 2 B P 8.±.2 D 2.±.4.35±.2 4.±.2.55±.2.75±.2 5.5±.2 2.± ±.2 7.3±.2 2.3±.2.55± d.65±.2 2 max mm (3") D F E W FODM2 Series, FODM24, FODM27, FODM275 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers 26 Fairchild Semiconductor Corporation FODM2 Series, FODM24, FODM27, FODM275 Rev..7

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13 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

14 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FODM2CR2V