AWL b/g/n/ac Power Amplifier, LNA and Tx/Rx/BT Switch DATA SHEET - Rev 2.6

Transcription

1 FEATURES Supports emerging 82.11ac highdata rate standard Fully integrated FEIC including 2.4 GHz Power Amplifier, Low Noise Amplifier with Bypass mode and SP3T TX/RX/BT Switch 1.8% Dynamic POUT = +17 dbm with 82.11ac, MCS9HT4 waveform db of Linear Power Gain.5 db BT Band RF Switch Insertion Loss Power Detector with High Accuracy over 3:1 VSWR 2.2 db RX Path Noise Figure with 15 db Gain LNA Mode Single 3. to 4.8 V Supply Voltage 5 ΩInternally Matched RF Ports Leadfree and RoHS Compliant 2.5 x 2.5 x.4 mm QFN Package APPLICATIONS 82.11b/g/n/ac WLAN for Fixed, Mobile and Handheld applications PRODUCT DESCRIPTION The ANADIGICS AWL91 is a high performance InGaP HBT FEIC that incorporates a 2.4 GHz Power Amplifier, Low Noise Amplifier, RF Switch and Power Detector. The FEIC is designed for WLAN transmit and receive applications in the GHz band. Matched to 5 Ohms and DC blocked at all RF inputs and outputs, the part requires no additional RF matching components offchip. The antenna port is switched between WLAN transmit, WLAN receive and BlueTooth with low loss switches. The integrated power detector circuit facilitates accurate power control under varying load conditions. All circuits are biased by a single +3.6 V supply and consume ultra low current in the OFF mode. The PA exhibits unparalleled linearity and efficiency for 82.11b/g/n/ac WLAN systems under the toughest signal conditions within these standards. Vdet GND Vcc Vcc AWL b/g/n/ac Power Amplifier, LNA and Tx/Rx/BT Switch DATA SHEET Rev 2.6 AWL mm x 2.5 mm x.4 mm Surface Mount Front End IC The AWL91 is manufactured using advanced InGaP HBT technology that offers stateoftheart performance, reliability, temperature stability and ruggedness. ANT GND Vrx Vbt 2GHz PA TX 2GHz LNA Bypass RX ANT BT SP3T 2GHz LNA GND BT Vcc LNA_EN TX PA_EN GND RX Figure 1: Block Diagram

2 ANT GND Vrx Vbt 1 VDET GND 12 2 GND AWL91 BT 11 3 VCC VCC 1 4 VCC TX PA_EN GND LNA_EN RX Figure 2: Pinout Diagram 8 PIN NAME DESCRIPTION 1 VDET Power detector output 2 GND Ground Table 1: Pin Description 3 VCC Power Supply. Bias for the transistors in the part. 4 VCC Power Supply. Bias for the transistors in the part. 5 TX RF transmit input port. DC blocked internally. 6 PA_EN Power Amplifier Enable. On/Off control for the Tx path power amplifier 7 GND Ground 8 RX RF receive output port. DC blocked internally. 9 LNA_EN LNA Enable. On/Off control for the Rx path low noise amplifier 1 VCC Power Supply. Bias for the transistors in the part. 11 BT Bluetooth RF port 12 GND Ground 13 Vbt Bluetooth enable. On/Off control for Bluetooth RF path. 14 Vrx Switch control for receive path 15 GND Ground 16 ANT Antenna Port. Common connection for the PA, LNA, and Bluetooth paths. DC blocked internally. 2 DATA SHEET Rev 2.6

3 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT COMMENTS DC Power Supply +6. RF Input Level, 2.4 GHz PA +5 dbm Modulated Operating Ambient Temperature C Storage Temperature C Storage Humidity 85 % Junction Temperature 15 C ESD Tolerance 1 V Human body model (HBM) MSL Rating MSL1 Functional operation to the specified performance is not implied under these conditions. Operation of any single parameter in excess of the absolute ratings may cause permanent damage. No damage occurs if one parameter is set at the limit while all other parameters are set within normal operating ranges. V Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency Ranges MHz 82.11b/g/n/ac DC Power Supply Voltage (VCC) V With RF applied Control Pin Voltage (PA_EN, LNA_EN, +2.8 Vrx, Vbt) Operating Temperature C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. V Logic High/On Logic Low/Off 3 DATA SHEET Rev 2.6

4 Table 4: Electrical Specifications TX Mode (TC = + C, VCC = +3.6V, PA_EN = +3.2V, Vrx =.V, Vbt =.V, LNA_EN =.V) 64 QAM OFDM 54 Mbps PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency MHz Power Gain db Gain Flatness +/. db Error Vector Magnitude (EVM) (1) Transmit Mask Notes: (1) EVM includes system noise floor of.6% (44 db) db ma db ma db ma db ma dbm PA Noise Figure 5 db Input Return Loss 12 db Output Return Loss 12 db Output Spurious Levels Harmonics 2 fo 3 fo 4 fo dbm/ MHz POUT = 19.5 dbm, Dyn Mode 54 Mbps data rate, Avg during packet POUT = 18 dbm, Dyn Mode 54 Mbps data rate, Avg during packet POUT = 16 dbm, Dyn Mode 54 Mbps data rate, Avg during packet POUT = 5 dbm, Dyn Mode 54 Mbps data rate, Avg during packet 82.11b DBPSK 1 Mbps data rate, Raised Root Cosine filtering b DBPSK 1 Mbps data rate, Gaussian filtering n MCSHT n MCSHT4 For Power levels up to dbm 1 Mbps CCK Settling Time.5 us Within.5 db of final value Quiescent Current (Icq) 1 ma 4 DATA SHEET Rev 2.6

5 Table 5: Electrical Specifications Tx Mode (TC = + C, VCC = +3.6V, PA_EN = +3.2V, Vrx =.V, Vbt =.V, LNA_EN =.V) 82.11n/ac PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency MHz Error Vector Magnitude (EVM) (1) and Current Consumption Table 6: Electrical Specifications TX Mode Power Detector (TC = + C, VCC = +3.6V, PA_EN = +3.2V, Vrx =.V, Vbt =.V, LNA_EN =.V) PARAMETER MIN TYP MAX UNIT COMMENTS 33 db ma db ma db ma Transmit Mask Pass N/A Notes: (1) EVM includes system noise floor of.6% (44 db). POUT = 19 dbm, MCS7 HT2 POUT = 18 dbm, MCS8 HT2 POUT = 17 dbm, MCS9 HT n, 82.11ac at respective modulation and power levels noted above Detector Voltage mv POUT = dbm POUT = 1 dbm POUT = 18 dbm POUT = dbm Total Internal Load Impedance 1.5 kω Load Accuracy +/.5 db Detector Directivity 19 db Output Power variation at 3:1 VSWR all phases Output Power variation at 3:1 VSWR all phases Table 7: Electrical Specification RX LNA Mode (TC = + C, VCC = +3.6V, LNA_EN = +3.2V, Vrx = +3.2V, Vbt =.V, PA_EN =.V) PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency MHz Gain LNA Mode db Gain Flatness +/. db Across any 4 MHz band Rx Noise Figure db Input Return Loss 5 db Output Return Loss 12 db IIP3 dbm Settling Time.5 us Within.5 db of final value Rx Current 9 ma 5 DATA SHEET Rev 2.6

6 Table 8: Electrical Specification RX Bypass Mode (TC = + C, VCC = +3.6V, Vrx = +3.2V, LNA_EN =.V, Vbt =.V, PA_EN =.V) PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency MHz Gain RX Bypass Mode db Gain Flatness +/. db Across any 4 MHz band Rx Noise Figure 6 db Input Return Loss 12 db Output Return Loss 12 db IIP3 + dbm Settling Time.5 us Within.5 db of final value Table 9: Electrical Specifications Bluetooth Path (TC = + C, VCC = +3.6V, Vrx =.V, Vbt = +3.2V, PA_EN =.V, LNA_EN =.V) PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency MHz Insertion Loss.5 db Gain Flatness +/. db Across any 4 MHz band Input Return Loss 1 db Output Return Loss 1 db BT RX Isolation 2 db BT to RX BT TX Isolation db BT to TX Settling Time.5 1. µs 6 DATA SHEET Rev 2.6

7 Table 1: Electrical Specifications Switch and Control Pin (TC = + C, VCC = +3.6V, Vcontrol High = +3.2V, Vcontrol Low =.V) PARAMETER MIN TYP MAX UNIT COMMENTS Control Pin Steady State Input Current (PA_EN) ua ua Logic Hi/On Logic Low/OFF Control Pin Steady State Input Current (Vbt, Vrx) 1.5 ua ua Logic Hi/On Logic Low/OFF Control Pin Steady State Input Current (LNA_EN).5 ua ua Logic Hi/On Logic Low/OFF Leakage Current 3 1 ua Total from all bias Pins, Controls in OFF mode Vcc = 3.6V TXRX Isolation 36 db Table 11: Switch Modes of Operation MODES OF OPERATION PA_EN LNA_EN Vrx Vbt TX HIGH LOW LOW LOW RX LOW HIGH HIGH LOW RX Bypass LOW LOW HIGH LOW BT LOW LOW LOW HIGH Power On Reset LOW LOW LOW LOW 7 DATA SHEET Rev 2.6

8 MCS7 HT2 PERFORMANCE DATA Ttotal Measured EVM (db) Figure 3: EVM and ICC vs. Output Power Across Frequency (VCC = +3.6 V, TC = + C) EVM 2.41GHz EVM 2.44GHz EVM 2.47GHz Total Ipkt 2.41GHz Total Ipkt 2.44GHz Total Ipkt 2.47GHz Total Current (ma) [Average in Packet] Ttotal Measured EVM (db) Figure 4: EVM and ICC vs. Output Power Across Frequency (VCC = +3.3 V, TC = + C) EVM 2.41GHz EVM 2.44GHz EVM 2.47GHz Total Ipkt 2.41GHz Total Ipkt 2.44GHz Total Ipkt 2.47GHz Total Current (ma) [Average in Packet] Figure 5: EVM and ICC vs. Output Power Across Temp (Frequency = 2.44 GHz, VCC = +3.6 V) 2 EVM 2.44GHz, +3.6V, +85C 4. Figure 6: Gain vs. Output Power Across Frequency (VCC = +3.6 V, TC = + C) EVM 2.44GHz, +3.6V, +C EVM 2.44GHz, +3.6V, 4C 36. Gain 2.412GHz 3.6V +C Total Ipkt 2.44GHz, +3.6V, +85C Total Ipkt 2.44GHz, +3.6V, +C. Gain 2.442GHz 3.6V +C Ttotal Measured EVM (db) Total Ipkt 2.44GHz, +3.6V, 4C Total Current (ma) [Average in Packet] Gain 2.472GHz 3.6V +C Figure 7: Gain vs. Output Power Across Voltage and Temp (Frequency = GHz) Figure 8: Gain vs. Output Power Across Voltage and Temp (Frequency = GHz) Gain 2.412GHz 3.6V +85C Gain 2.412GHz 3.6V +C Gain 2.412GHz 3.6V 4C Gain 2.412GHz 3.V +85C Gain 2.412GHz 3.V +C Gain 2.412GHz 3.V 4C Gain 2.412GHz 4.8V +85C 21 Gain 2.412GHz 4.8V +C Gain 2.412GHz 4.8V 4C 2 Gain 2.442GHz 3.6V +85C Gain 2.442GHz 3.6V +C Gain 2.442GHz 3.6V 4C Gain 2.442GHz 3.V +85C Gain 2.442GHz 3.V +C Gain 2.442GHz 3.V 4C Gain 2.442GHz 4.8V +85C 21 Gain 2.442GHz 4.8V +C Gain 2.442GHz 4.8V 4C 2 8 DATA SHEET Rev 2.6

9 MCS7 HT2 PERFORMANCE DATA Figure 9: Gain vs. Output Power Across Voltage and Temp (Frequency = GHz) 21 2 Gain 2.472GHz 3.6V +85C Gain 2.472GHz 3.6V +C Gain 2.472GHz 3.6V 4C Gain 2.472GHz 3.V +85C Gain 2.472GHz 3.V +C Gain 2.472GHz 3.V 4C Gain 2.472GHz 4.8V +85C Gain 2.472GHz 4.8V +C Gain 2.472GHz 4.8V 4C Figure 1: VDET vs. Output Power Across Voltage and Temp (Frequency = GHz) Detector Voltage (mv) Vdet 2.412GHz 3.6V +85C Vdet 2.412GHz 3.6V +C Vdet 2.412GHz 3.6V 4C Vdet 2.412GHz 3.V +85C Vdet 2.412GHz 3.V +C Vdet 2.412GHz 3.V 4C Vdet 2.412GHz 4.8V +85C Vdet 2.412GHz 4.8V +C Vdet 2.412GHz 4.8V 4C Figure 11: VDET vs. Output Power Across Voltage and Temp (Frequency = GHz) Detector Voltage (mv) Vdet 2.442GHz 3.6V +85C Vdet 2.442GHz 3.6V +C Vdet 2.442GHz 3.6V 4C Vdet 2.442GHz 3.V +85C Vdet 2.442GHz 3.V +C Vdet 2.442GHz 3.V 4C Vdet 2.442GHz 4.8V +85C Vdet 2.442GHz 4.8V +C Vdet 2.442GHz 4.8V 4C Detector Voltage (mv) Figure 12: VDET vs. Output Power Across Voltage and Temp (Frequency = GHz) Vdet 2.472GHz 3.6V +85C Vdet 2.472GHz 3.6V +C Vdet 2.472GHz 3.6V 4C Vdet 2.472GHz 3.V +85C Vdet 2.472GHz 3.V +C Vdet 2.472GHz 3.V 4C Vdet 2.472GHz 4.8V +85C Vdet 2.472GHz 4.8V +C Vdet 2.472GHz 4.8V 4C DATA SHEET Rev 2.6

10 MCS8 HT2 PERFORMANCE DATA Ttotal Measured EVM (db) Figure 13: EVM and ICC vs. Output Power Across Frequency (VCC = +3.6 V, TC = + C) EVM 2.41GHz EVM 2.44GHz EVM 2.47GHz Total Ipkt 2.41GHz Total Ipkt 2.44GHz Total Ipkt 2.47GHz Total Current (ma) [Average in Packet] Ttotal Measured EVM (db) Figure 14: EVM and ICC vs. Output Power Across Frequency (VCC = +3.3 V, TC = + C) EVM 2.41GHz EVM 2.44GHz EVM 2.47GHz Total Ipkt 2.41GHz Total Ipkt 2.44GHz Total Ipkt 2.47GHz Total Current (ma) [Average in Packet] Figure 15: EVM and ICC vs. Output Power Across Temp (Frequency = 2.44 GHz, VCC = +3.6 V) 2 4. EVM 2.44GHz, +3.6V, +85C Figure 16: Gain vs. Output Power Across Frequency (VCC = +3.6 V, TC = + C) EVM 2.44GHz, +3.6V, +C EVM 2.44GHz, +3.6V, 4C 36. Gain 2.412GHz 3.6V +C Ttotal Measured EVM (db) Total Ipkt 2.44GHz, +3.6V, +85C Total Ipkt 2.44GHz, +3.6V, +C Total Ipkt 2.44GHz, +3.6V, 4C Total Current (ma) [Average in Packet] Gain 2.442GHz 3.6V +C Gain 2.472GHz 3.6V +C Figure 17: Gain vs. Output Power Across Voltage and Temp (Frequency = GHz) Figure 18: Gain vs. Output Power Across Voltage and Temp (Frequency = GHz) Gain 2.412GHz 3.6V +85C Gain 2.412GHz 3.6V +C Gain 2.412GHz 3.6V 4C Gain 2.412GHz 3.V +85C Gain 2.412GHz 3.V +C Gain 2.412GHz 3.V 4C Gain 2.412GHz 4.8V +85C 21 Gain 2.412GHz 4.8V +C Gain 2.412GHz 4.8V 4C 2 Gain 2.442GHz 3.6V +85C Gain 2.442GHz 3.6V +C Gain 2.442GHz 3.6V 4C Gain 2.442GHz 3.V +85C Gain 2.442GHz 3.V +C Gain 2.442GHz 3.V 4C Gain 2.442GHz 4.8V +85C 21 Gain 2.442GHz 4.8V +C Gain 2.442GHz 4.8V 4C 2 1 DATA SHEET Rev 2.6

11 MCS8 HT2 PERFORMANCE DATA Figure 19: Gain vs. Output Power Across Voltage and Temp (Frequency = GHz) Gain 2.472GHz 3.6V +85C Gain 2.472GHz 3.6V +C Gain 2.472GHz 3.6V 4C Figure 2: VDET vs. Output Power Across Voltage and Temp (Frequency = GHz) Detector Voltage (mv) Vdet 2.412GHz 3.6V +85C Vdet 2.412GHz 3.6V +C Vdet 2.412GHz 3.6V 4C Vdet 2.412GHz 3.V +85C Vdet 2.412GHz 3.V +C Vdet 2.412GHz 3.V 4C Vdet 2.412GHz 4.8V +85C Vdet 2.412GHz 4.8V +C Vdet 2.412GHz 4.8V 4C 21 Gain 2.472GHz 3.V +85C Gain 2.472GHz 3.V +C Gain 2.472GHz 3.V 4C Gain 2.472GHz 4.8V +85C Gain 2.472GHz 4.8V +C Gain 2.472GHz 4.8V 4C Detector Voltage (mv) Figure 21: VDET vs. Output Power Across Voltage and Temp (Frequency = GHz) Vdet 2.442GHz 3.6V +85C Vdet 2.442GHz 3.6V +C Vdet 2.442GHz 3.6V 4C Vdet 2.442GHz 3.V +85C Vdet 2.442GHz 3.V +C Vdet 2.442GHz 3.V 4C Vdet 2.442GHz 4.8V +85C Vdet 2.442GHz 4.8V +C Vdet 2.442GHz 4.8V 4C Detector Voltage (mv) Figure : VDET vs. Output Power Across Voltage and Temp (Frequency = GHz) Vdet 2.472GHz 3.6V +85C Vdet 2.472GHz 3.6V +C Vdet 2.472GHz 3.6V 4C Vdet 2.472GHz 3.V +85C Vdet 2.472GHz 3.V +C Vdet 2.472GHz 3.V 4C Vdet 2.472GHz 4.8V +85C Vdet 2.472GHz 4.8V +C Vdet 2.472GHz 4.8V 4C DATA SHEET Rev 2.6

12 MCS9 HT4 PERFORMANCE DATA Ttotal Measured EVM (db) Figure : EVM and ICC vs. Output Power Across Frequency (VCC = +3.6 V, TC = + C) EVM 2.41GHz EVM 2.44GHz EVM 2.47GHz Total Ipkt 2.41GHz Total Ipkt 2.44GHz Total Ipkt 2.47GHz Total Current (ma) [Average in Packet] Ttotal Measured EVM (db) Figure : EVM and ICC vs. Output Power Across Frequency (VCC = +3.3 V, TC = + C) EVM 2.41GHz EVM 2.44GHz EVM 2.47GHz Total Ipkt 2.41GHz Total Ipkt 2.44GHz Total Ipkt 2.47GHz Total Current (ma) [Average in Packet] Figure : EVM and ICC vs. Output Power Across Temp (Frequency = 2.44 GHz, VCC = +3.6 V) 2 EVM 2.44GHz, +3.6V, +85C 4. Figure : Gain vs. Output Power Across Frequency (VCC = +3.6 V, TC = + C) EVM 2.44GHz, +3.6V, +C EVM 2.44GHz, +3.6V, 4C 36. Gain 2.412GHz 3.6V +C Total Ipkt 2.44GHz, +3.6V, +85C Total Ipkt 2.44GHz, +3.6V, +C. Gain 2.442GHz 3.6V +C Ttotal Measured EVM (db) Total Ipkt 2.44GHz, +3.6V, 4C Total Current (ma) [Average in Packet] Gain 2.472GHz 3.6V +C Figure : Gain vs. Output Power Across Voltage and Temp (Frequency = GHz) Figure : Gain vs. Output Power Across Voltage and Temp (Frequency = GHz) Gain 2.412GHz 3.6V +85C Gain 2.442GHz 3.6V +85C Gain 2.412GHz 3.6V +C Gain 2.412GHz 3.6V 4C Gain 2.442GHz 3.6V +C Gain 2.442GHz 3.6V 4C Gain 2.412GHz 3.V +85C Gain 2.412GHz 3.V +C Gain 2.442GHz 3.V +85C Gain 2.442GHz 3.V +C Gain 2.412GHz 3.V 4C Gain 2.412GHz 4.8V +85C Gain 2.442GHz 3.V 4C Gain 2.442GHz 4.8V +85C 21 Gain 2.412GHz 4.8V +C Gain 2.412GHz 4.8V 4C 21 Gain 2.442GHz 4.8V +C Gain 2.442GHz 4.8V 4C DATA SHEET Rev 2.6

13 MCS9 HT4 PERFORMANCE DATA Figure : Gain vs. Output Power Across Voltage and Temp (Frequency = GHz) Gain 2.472GHz 3.6V +85C Gain 2.472GHz 3.6V +C Gain 2.472GHz 3.6V 4C Detector Voltage (mv) Figure : VDET vs. Output Power Across Voltage and Temp (Frequency = GHz) Vdet 2.412GHz 3.6V +85C Vdet 2.412GHz 3.6V +C Vdet 2.412GHz 3.6V 4C Vdet 2.412GHz 3.V +85C Vdet 2.412GHz 3.V +C Vdet 2.412GHz 3.V 4C Vdet 2.412GHz 4.8V +85C Vdet 2.412GHz 4.8V +C Vdet 2.412GHz 4.8V 4C 21 Gain 2.472GHz 3.V +85C Gain 2.472GHz 3.V +C Gain 2.472GHz 3.V 4C Gain 2.472GHz 4.8V +85C Gain 2.472GHz 4.8V +C Gain 2.472GHz 4.8V 4C Detector Voltage (mv) Figure : VDET vs. Output Power Across Voltage and Temp (Frequency = GHz) Vdet 2.442GHz 3.6V +85C Vdet 2.442GHz 3.6V +C Vdet 2.442GHz 3.6V 4C Vdet 2.442GHz 3.V +85C Vdet 2.442GHz 3.V +C Vdet 2.442GHz 3.V 4C Vdet 2.442GHz 4.8V +85C Vdet 2.442GHz 4.8V +C Vdet 2.442GHz 4.8V 4C Detector Voltage (mv) Figure : VDET vs. Output Power Across Voltage and Temp (Frequency = GHz) Vdet 2.472GHz 3.6V +85C Vdet 2.472GHz 3.6V +C Vdet 2.472GHz 3.6V 4C Vdet 2.472GHz 3.V +85C Vdet 2.472GHz 3.V +C Vdet 2.472GHz 3.V 4C Vdet 2.472GHz 4.8V +85C Vdet 2.472GHz 4.8V +C Vdet 2.472GHz 4.8V 4C DATA SHEET Rev 2.6

14 Rx PERFORMANCE DATA Figure 33: LNA Gain vs. Frequency Across Voltage and Temp Figure 34: LNA NF vs. Frequency Across Voltage and Temp NF 3.6V +85C NF 3.6V +C 16 5 NF 3.6V 4C NF 3.V +85C 4.5 NF 3.V +C 15 NF 3.V 4C 4 NF 4.8V +85C Gain 3.6V +85C Noise Figure (db) NF 4.8V +C NF 4.8V 4C 11 Gain 3.6V +C Gain 3.6V 4C 2 Gain 3.V +85C Gain 3.V +C Gain 3.V 4C 1 9 Gain 4.8V +85C Gain 4.8V +C.5 Gain 4.8V 4C Frequency (GHz) Frequency (GHz) 14 DATA SHEET Rev 2.6

15 MCS HT2 TRANSMIT MASK PERFORMANCE DATA Figure 35: Transmit Mask Ouput Power vs. Frequency Across Voltage (TC = 4 C) Figure 36: Transmit Mask Ouput Power vs. Frequency Across Voltage (TC = + C) PASS MASK OUTPUT POWER (dbm) V 4C 3.V 4C 4.8V 4C Freq (MHz) PASS MASK OUTPUT POWER (dbm) V +C 3.V +C 4.8V +C Freq (MHz) PASS MASK OUTPUT POWER (dbm) Figure 37: Transmit Mask Ouput Power vs. Frequency Across Voltage (TC = +85 C) V +85C 3.V +85C 4.8V +85C Freq (MHz) 15 DATA SHEET Rev 2.6

16 APPLICATION Schematic Although not shown in the schematic, a large value capacitor (~ 1 uf) should be connected to the voltage supply lines for low frequency decoupling. RF ANT VRX VBT VDET 1 VDET GND 12 C3 1pF R1 1kΩ 2 GND BT 11 RF BT VCC 3 VCC VCC 1 VCC C1 1µF C2 1nF VCC 4 VCC LNA_EN 9 C2 1nF C1 1µF C1 1µF C2 1nF LNAEN NOTES: 1. PA_EN: Internal pulldown resistor. LNA_EN: No internal pullup/down resistor. VRX: No internal pullup/down resistor. VBT: No internal pullup/down resistor. RF TX PAEN RF RX 2. External pullup/down resistors are not required on any control lines to maintain or limit idle current. 3. A low voltage state (.V to +.4V) should be applied on Vrx and Vbt control lines to avoid possible EVM degrada on in transmit mode. If this low logic level cannot be maintained in transmit mode and it floats, we recommend using a pull down resistor external to our part on the Vrx/Vbt pins. Figure 38: Evaluation Board Schematic 16 DATA SHEET Rev 2.6

17 Figure 39: Package Outline 16 Pin, 2.5 x 2.5 x.4 mm QFN Pin 1 Identifier Wafer Number Date Code YY= Year WW= Work Week 91 LLLLL NN CC YYWW Figure 4: Branding Specification 17 DATA SHEET Rev 2.6 Part Number Lot Number Country Code(CC)

18 Figure 41: Recommended PCB Layout 18 DATA SHEET Rev 2.6

19 COMPONENT PACKAGING PIN 1 Ao = 2.73 ±.5 Bo = 2.73 ±.5 Notes: Ko =.65 (1) 1 Sprocket hole pitch cumulative tolerance ±.2 (2) Camber in compliance with EIA 481. (3) Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. Figure 42: Carrier Tape 19 DATA SHEET Rev 2.6

20 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AWL91P7 4 C to +85 C 16 pin, 2.5 x 2.5 x.4 mm Surface Mount Module Bags AWL91P9 4 C to +85 C 16 pin, 2.5 x 2.5 x.4 mm Surface Mount Module Partial Reel AWL91V2 4 C to +85 C 16 pin, 2.5 x 2.5 x.4 mm Surface Mount Module 5 piece T/R EVB91 4 C to +85 C Evaluation Board Evaluation Board ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 759, U.S.A. Tel: +1 (98) 6685 Fax: +1 (98) URL: IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 2 DATA SHEET Rev 2.6