IRG4MC50U. UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. Thermal Resistance. Features V CES = 600V. V CE(on) max = 2.25V.

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1 INSULATED GATE BIPOLAR TRANSISTOR PD A IRG4MC50U UltraFast Speed IGBT Features Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 khz - 8 khz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets G C E n-channel V CES = 600V V CE(on) max = GE = 5V, = 27A Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-254AA Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 T C = 25 C Continuous Collector Current T C = 0 C Continuous Collector Current 27 A M Pulsed Collector Current ➀ 40 I LM Clamped Inductive Load Current ➁ 40 V GE Gate-to-Emitter Voltage ± 20 V P T C = 25 C Maximum Power Dissipation 50 W P T C = 0 C Maximum Power Dissipation 60 T J Operating Junction and -55 to + 50 T STG Storage Temperature Range C Lead Temperature 300 (0.063in./.6mm from case for s) Weight 9.3 (typical) g Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case 0.83 C/W 02/08/02

2 IRG4MC50U Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, =.0 ma V (BR)ECS Emitter-to-Collector Breakdown Voltage ƒ 7 V V GE = 0V, =.0 A V (BR)CES / T J Temperature Coeff. of Breakdown Voltage 0.56 V/ C V GE = 0V, =.0 ma 2.25 = 27A V GE = 5V V CE(ON) Collector-to-Emitter Saturation Voltage 2.75 V = 35A See Fig.2, = 27A, T J = 25 C V GE(th) Gate Threshold Voltage V CE = V GE, =.0 ma V GE(th) / T J Temperature Coeff. of Threshold Voltage -4 mv/ C V CE = V GE, = 250 µa g fe Forward Transconductance 6 S V CE 5V, = 27A ES Zero Gate Voltage Collector Current 50 V GE = 0V, V CE = 480V µa 2000 V GE = 0V, V CE = 480V, T J = 25 C I GES Gate-to-Emitter Leakage Current ±0 na V GE = ±20V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 270 = 27A Q ge Gate - Emitter Charge (turn-on) 38 nc V CC = 480V See Fig. 8 Q gc Gate - Collector Charge (turn-on) 90 V GE = 5V t d(on) Turn-On Delay Time 75 T J = 25 C t r Rise Time 75 = 27A, V CC = 480V ns t d(off) Turn-Off Delay Time 50 V GE = 5V, R G = 2.35Ω t f Fall Time 0 Energy losses include "tail" E ts Total Switching Loss 0.9 mj See Fig.,, 3, 4 t d(on) Turn-On Delay Time 75 T J = 25 C, t r Rise Time 75 ns = 27A, V CC = 480V t d(off) Turn-Off Delay Time 200 V GE = 5V, R G = 2.35Ω t r Rise Time 50 Energy losses include "tail" E ts Total Switching Loss 2.0 mj See Fig. 3, 4 L C +L E Total Inductance 6.8 nh Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) C ies Input Capacitance 450 V GE = 0V C oes Output Capacitance 250 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 45 ƒ =.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V CC = 80%(V CES ), V GE = 20V, L = 0µH, R G = 2.35Ω, (See fig. 3a) ƒ Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2

3 IRG4MC50U Square wave: 60% of rated voltage Ideal diodes Triangular wave: Clamp voltage: 80% of rated Load Current ( A ) For both: Duty cycle : 50% Tj = 25 C Tsink = 90 C Gate drive as specified Power Dissipation = 37W 0. 0 f, Frequency ( khz ) Fig. - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK ) 00 00, Collector-to-Emitter Current (A) 0 T J = 50 C T J = 25 C V GE = 5V 20µs PULSE WIDTH 0. V CE, Collector-to-Emitter Voltage (V), Collector-to-Emitter Current (A) 0 T J = 50 C T J = 25 C V CC = 50V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3

4 Maximum DC Collector Current (A) IRG4MC50U LIMITED BY PACKAGE V GE = 5V 3.0 V GE = 5V 80µs PULSE WIDTH = 54A V CE, Collector-to Emitter Voltage (V) 2.0 = 27A 20 = 4A T J, Junction Temperature ( C) T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) 0. D = P 0.05 DM t 0.02 t2 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4

5 Total Switching Losses (mj) Total Switching Losses (mj) IRG4MC50U C, Capacitance (pf) VGE = 0V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) V CC = 400V 480V = 27A 0 0 V CE, Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage.60 V CC = 480V V GE = 5V T J = 25 C = 27A R G = 2.35Ω V GE = 5V V CC = 480V = 54A.20 = 27A 0.80 = 4A R G, Gate Resistance (Ω) T J, Junction Temperature ( C) Fig. 9 - Typical Switching Losses vs. Gate Fig. - Typical Switching Losses vs. Resistance Junction Temperature 5

6 Total Switching Losses (mj), Collector-to-Emitter Current (A) IRG4MC50U R G = 2.35Ω TJ = 25 C 50 C V GE = 5V V CC = 480V 00 V GE = 20V T J = SAFE OPERATING AREA , Collector Current (A) V DS, Drain-to-Source Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA 6

7 IRG4MC50U 50V 00V L V * C D.U.T V 480µF 960V R L = 720V 4 C * Driver same ty pe as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor w ill increase to obtain rated Id. Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit 50V 00V L Driver* D.U.T. V C ƒ Fig. 4a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 720V 90% ƒ % V C 90% t d(off) Fig. 4b - Switching Loss Waveforms 5% % t d(on) t r E on E ts = (E on +E off ) 7 t f E off t=5µs

8 IRG4MC50U Case Outline and Dimensions TO-254AA 3.78 [.49] 3.53 [.39] A 3.84 [.545] 3.59 [.535] 6.60 [.260] 6.32 [.249] 0.2 [.005].27 [.050].02 [.040] 3.78 [.49] 3.53 [.39] A 3.84 [.545] 3.59 [.535] 6.60 [.260] 6.32 [.249] 0.2 [.005].27 [.050].02 [.040] 7.40 [.685] 6.89 [.665] [.800] [.790] 3.84 [.545] 3.59 [.535] B [.895] 2.2 [.835] 7.40 [.685] 6.89 [.665] [.800] [.790] 3.84 [.545] 3.59 [.535] B R.52 [.060] 3.8 [.50] 2X C 7.40 [.685] 6.89 [.665].4 [.045] 3X 0.89 [.035] 0.36 [.04] B A 0.84 [.033] MAX. 3.8 [.50] 4.82 [.90] 3.8 [.50] 3.8 [.50] 2X.4 [.045] 3X 0.89 [.035] 0.36 [.04] B A 4.06 [.60] 3.56 [.40] NOTES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 3. CONTROLLING DIMENS ION: INCH. 4. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS = COLLECTOR 2 = EMITTER 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-9500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. Data and specifications subject to change without notice. 02/02 8