Samsung K4B2G0846D-HCH9 32 nm 2 Gbit DDR3 SDRAM. DRAM Process Report

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1 Samsung K4B2G0846D-HCH9 32 nm 2 Gbit DDR3 SDRAM DRAM Process Report

2 Samsung K4B2G0846D-HCH9 32 nm 2 Gbit DDR3 SDRAM 2 Some of the information in this report may be covered by patents, mask and/or copyright protection. This report should not be taken as an inducement to infringe on these rights Chipworks Inc. This report is provided exclusively for the use of the purchasing organization. It can be freely copied and distributed within the purchasing organization, conditional upon the accompanying Chipworks accreditation remaining attached. Distribution of the entire report outside of the purchasing organization is strictly forbidden. The use of portions of the document for the support of the purchasing organization s corporate interest (e.g., licensing or marketing activities) is permitted, as defined by the fair use provisions of the copyright act. Accreditation to Chipworks must be attached to any portion of the reproduced information. CWR CYRK Revision 1 Published: February 28, 2011

3 Samsung K4B2G0846D-HCH9 32 nm 2 Gbit DDR3 SDRAM 3 Table of Contents Introduction Major Findings Device Identification Package Photographs Die Photograph and Die Markings General Structure Die Efficiency Calculation Die Delayered to Metal 1 Die Corner, Bond pads, and Fuse Description of Directions Wordline Direction Bitline Direction Detailed Structure Active Direction BWCAT and Silicon Plugs BWCAT (1) BWCAT (2) BWCAT (3) BWCAT (4) BWCAT (5) Detailed Structure Wordline Direction BWCAT SEM (1) BWCAT SEM (2) Wordline Contact (TEM) BWCAT Near Edge Cells (TEM) BWCAT Near Edge Cells (Detailed TEM) BWCAT Buried Wordline (TEM) Capacitor and Bitline Contacts (SEM) Capacitor and Bitline Contacts (1)

4 Samsung K4B2G0846D-HCH9 32 nm 2 Gbit DDR3 SDRAM 4 Table of Contents (continued) Memory Capacitor Structure Cross Section Memory Block Edge (Wordline Direction) Top Plate Contact Capacitors (Wordline Direction) Capacitors (Wordline Direction) (SEM) Capacitor Top (Wordline Direction) (1) Capacitor Top (Wordline Direction) (2) Capacitor Top (Wordline Direction) (3) Capacitor Top (Wordline Direction) (4) Capacitor Bottom (Wordline Direction) Memory Cell Layout Active Regions Active Regions (Higher Magnification TEM) Active Regions and Wordline Bottoms (BWCAT) Active Regions and Wordline Bottoms (BWCAT Higher Magnification TEM) Cell Area Calculation (Wordline Pitch at the Memory Block Edge) Bitline Pitch at the Memory Block Edge Active Regions and Wordlines (BWCAT) Wordlines and Bottom of Bitlines Bitlines with Active and Capacitor Silicon Plugs Bitlines and Wordlines Bitlines and Capacitor Silicon Plugs Bitlines, Capacitor Silicon Plugs and Bottom of Capacitors Bitlines, Capacitor Silicon Plugs and Bottom of Capacitors (Higher Magnification TEM) Capacitors Middle Region

5 Samsung K4B2G0846D-HCH9 32 nm 2 Gbit DDR3 SDRAM 5 Table of Contents (continued) Memory Cell Layout (continued) Capacitors Upper Region Capacitors at Regions of the Etch in the Silicon Nitride Layer Capacitors at Regions of the Etch in the Silicon Nitride Layer (Higher Magnification TEM) Top Plate Capacitor Materials Analysis TEM STEM Logic Between Memory Blocks Sense Amplifier and Selected Gates Sense Amplifier Smallest Transistor Sense Amplifier Minimum STI Sense Amplifier Gate Dielectric Wordline Drivers Wordline Drivers Gate (Width Direction) Wordline Drivers Gate Dielectric Wordline Drivers Gate Stack Wordline Drivers Contact Wordline Drivers Stacked Contact STI Gate Wrap Metal 1 Top of Via 1 Metal 2 Copper Tracks and Barrier Layers Via 2 Top Metal (Metal 3) Passivation About Chipworks

6 Samsung K4B2G0846D-HCH9 32 nm 2 Gbit DDR3 SDRAM 78 About Chipworks Chipworks is the recognized leader in reverse engineering and patent infringement analysis of semiconductors and electronic systems. The company s ability to analyze the circuitry and physical composition of these systems makes them a key partner in the success of the world s largest semiconductor and microelectronics companies. Intellectual property groups and their legal counsel trust Chipworks for success in patent licensing and litigation earning hundreds of millions of dollars in patent licenses, and saving as much in royalty payments. Research & Development and Product Management rely on Chipworks for success in new product design and launch, saving hundreds of millions of dollars in design, and earning even more through superior product design and faster launches. Contact Chipworks To find out more information on this report, or any other reports in our library, please contact Chipworks at Chipworks 3685 Richmond Road, Suite 500 Ottawa, Ontario K2H 5B7 Canada T F Web site: info@chipworks.com Please send any feedback to feedback@chipworks.com

Qualcomm QCA6174 802.11ac Wi-Fi 2x2 MIMO Combo SoC

Qualcomm QCA6174 802.11ac Wi-Fi 2x2 MIMO Combo SoC Qualcomm QCA6174 Basic Functional Analysis 1891 Robertson Road, Suite 500, Ottawa, ON K2H 5B7 Canada Tel: 613-829-0414 www.chipworks.com Basic Functional Analysis 2 Some of the information in this report