STH265N6F6-2AG, STH265N6F6-6AG
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1 STH265N6F6-2AG, STH265N6F6-6AG Automotive N-channel 60 V, 1.6 mω typ., 180 A STripFET F6 Power MOSFET in H²PAK-2 and H²PAK-6 packages Datasheet - production data Features TAB TAB Order code VDS RDS(on) max ID STH265N6F6-2AG 60 V 2.1 mω 180 A 2 1 H2PAK H2PAK-6 7 STH265N6F6-6AG 60 V 2.1 mω 180 A Designed for automotive applications Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications Switching applications G(1) D(TAB) G(1) D(TAB) Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(2, 3) S(2, 3, 4, 5, 6, 7) H2PAK-2 H2PAK-6 SC06140_H2PAK-2-6 Table 1: Device summary Order code Marking Package Packaging STH265N6F6-2AG 265N6F6 H 2 PAK-2 Tape and reel STH265N6F6-6AG 265N6F6 H 2 PAK-6 Tape and reel December 2014 DocID Rev 2 1/18 This is information on a product in full production.
2 Contents STH265N6F6-2AG, STH265N6F6-6AG Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Package mechanical data H2PAK-2 mechanical data H²PAK-6 package information Packaging information Revision history /18 DocID Rev 2
3 STH265N6F6-2AG, STH265N6F6-6AG Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 C 180 A ID (1) Drain current (continuous) at TC = 100 C 180 A IDM (2) Drain current (pulsed) 720 A PTOT Total dissipation at TC = 25 C 300 W EAS Single pulse avalanche energy (Starting TJ = 25 C, ID = 80 A) 720 mj Derating factor 2 W/ C Tstg Tj Storage temperature - 55 to 175 C Operating junction temperature Notes: (1) Current limited by package. (2) Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.5 C/W Rthj-pcb (1) Thermal resistance junction-pcb max 35 C/W Notes: (1) When mounted on FR-4 board of 1 inch², 2 oz Cu. DocID Rev 2 3/18
4 Electrical characteristics STH265N6F6-2AG, STH265N6F6-6AG 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Symbo l V(BR)DSS IDSS Table 4: On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage (VGS = 0) Zero gate voltage drain current (VGS = 0) ID = 250 µa 60 V VDS = 60 V 1 µa VDS = 60 V, TC=125 C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V VGS(th) RDS(on) Gate threshold voltage Static drain-source on-resistance VDS = VGS, ID = 250 µa VGS = 10 V, ID = 60 A 100 µa ± 100 na 2 4 V mω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance pf VDS = 25 V, f = 1 MHz, Coss Output capacitance pf VGS = 0 Crss Reverse transfer capacitance pf Qg Total gate charge nc VDD = 30 V, ID = 120 A, Qgs Gate-source charge nc VGS = 10 V Qgd Gate-drain charge nc Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time ns tr Rise time VDD = 30 V, ID = 60 A RG = 4.7 Ω, ns td(off) Turn-off-delay time VGS = 10 V ns tf Fall time ns 4/18 DocID Rev 2
5 STH265N6F6-2AG, STH265N6F6-6AG Electrical characteristics Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 180 A ISDM (1) Source-drain current (pulsed) 720 A VSD (2) Forward on voltage ISD = 180 A, VGS = V trr Reverse recovery time ISD = 120 A, VDD = 48 V ns Qrr Reverse recovery charge di/dt = 100 A/µs, nc IRRM Reverse recovery current Tj = 150 C A Notes: (1) Pulse width limited by safe operating area. (2) Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID Rev 2 5/18
6 Electrical characteristics 2.2 Electrical characteristics (curves) Figure 2: Safe operating area STH265N6F6-2AG, STH265N6F6-6AG Figure 3: Thermal impedance 280tok K ᵟ= Zth=k Rthj-c ᵟ=tp/t 10-2 Single pulse tp t tp(s) Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized V(BR)DSS vs. temperature V(BR)DSS AM09071v1 (norm) ID=1mA 1.1 Figure 7: Static drain-source on resistance RDS(on) (mω) VGS=10V TJ( C) ID(A) 6/18 DocID Rev 2
7 STH265N6F6-2AG, STH265N6F6-6AG Figure 8: Gate charge vs. gate-source voltage Electrical characteristics Figure 9: Capacitance variations Figure 10: Normalized gate threshold voltage vs. temperature Figure 11: Normalized on resistance vs. temperature Figure 12: Source-drain diode forward characteristics DocID Rev 2 7/18
8 Package mechanical data STH265N6F6-2AG, STH265N6F6-6AG 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 8/18 DocID Rev 2
9 STH265N6F6-2AG, STH265N6F6-6AG 3.1 H2PAK-2 mechanical data Figure 13: H²PAK-2 outline Package mechanical data _D DocID Rev 2 9/18
10 Package mechanical data STH265N6F6-2AG, STH265N6F6-6AG Table 8: H²PAK-2 mechanical data mm Dim. Min. Typ. Max. A A C e E F H H L L L L L M R V /18 DocID Rev 2
11 STH265N6F6-2AG, STH265N6F6-6AG Figure 14: H²PAK-2 recommended footprint Package mechanical data _D DocID Rev 2 11/18
12 Package mechanical data STH265N6F6-2AG, STH265N6F6-6AG 3.2 H²PAK-6 package information Figure 15: H²PAK-6 outline _Rev_F 12/18 DocID Rev 2
13 STH265N6F6-2AG, STH265N6F6-6AG Package mechanical data Table 9: H²PAK-6 mechanical data mm Dim. Min. Typ. Max. A A C e e e E F H H L L L L L M R V 0 8 DocID Rev 2 13/18
14 Package mechanical data Figure 16: H²PAK-6 recommended footprint STH265N6F6-2AG, STH265N6F6-6AG footprint_rev_f Dimensions are in mm. 14/18 DocID Rev 2
15 STH265N6F6-2AG, STH265N6F6-6AG Packaging information 4 Packaging information Figure 17: Tape outline DocID Rev 2 15/18
16 Packaging information REE L DIMENS IONS Figure 18: Reel outline STH265N6F6-2AG, STH265N6F6-6AG T 40 mm min. Access hole At slot location B D C A N Full radius Tape slot In core for Tape start G measured At hub Table 10: Tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base quantity 1000 P Bulk quantity 1000 R 50 T W /18 DocID Rev 2
17 STH265N6F6-2AG, STH265N6F6-6AG Revision history 5 Revision history Table 11: Document revision history Date Revision Changes 13-Oct First release. 18-Dec Document status promoted from preliminary to production data. DocID Rev 2 17/18
18 STH265N6F6-2AG, STH265N6F6-6AG IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved 18/18 DocID Rev 2
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"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP5N07 70 V 0.2 Ω 5 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM
STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET
STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP6NK60Z STP6NK60ZFP STB6NK60Z
VN5R003H-E. 3 mω reverse battery protection switch. Features. Description. Application
3 mω reverse battery protection switch Datasheet production data Features Max supply voltage V CC -16 to 41 V Operating voltage range V CC -16 to 28 V On-state resistance R ON 3mΩ General Optimized electromagnetic
IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET
N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY
P6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 600 W (10/0 µs ) Stand-off voltage range 6.8 to 440 V Unidirectional and bidirectional types Low clamping
TSM2N7002K 60V N-Channel MOSFET
SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching
AUIRFR8405 AUIRFU8405
Features Advanced Process Technology New Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description
Three terminal adjustable current sources Features Operates from 1V to 40V 0.02%/V current regulation Programmable from 1µA to 10mA ±3% initial accuracy Description The LM134/LM234/LM334 are 3-terminal
VN05N. High side smart power solid state relay PENTAWATT. Features. Description
High side smart power solid state relay Features Type V DSS R DS(on) I OUT V CC VN05N 60 V 0.18 Ω 13 A 26 V Output current (continuous): 13A @ Tc=25 C 5V logic level compatible input Thermal shutdown Under
ST13005. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
LM337. Three-terminal adjustable negative voltage regulators. Features. Description
Three-terminal adjustable negative voltage regulators Datasheet - production data current limit, thermal overload protection and safe area protection. All overload protection circuitry remains fully functional
Features. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1b) 0.46
N-Channel.8 Vgs Specified PowerTrench MOSFET October 2 General Description This 2V N-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management applications.
Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
ESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323
Transil, transient voltage surge suppressor diode for ESD protection Datasheet production data Features Max peak pulse power 160 W (8/0 µs) Asymmetrical bidirectional device Stand-off voltage: 15 and 4
L78. Positive voltage regulator ICs. Description. Features
Positive voltage regulator ICs Description Datasheet - production data TO-220 Features DPAK TO-220FP D²PAK Output current up to 1.5 A Output voltages of 5; 6; 8; 8.5; 9; 12; 15; 18; 24 V Thermal overload
DSL01-xxxSC5. Secondary protection for DSL lines. Features. Description. Applications. Benefits. Complies with the following standards
-xxxsc5 Secondary protection for DSL lines Features Low capacitance devices: -xxxsc5: Delta C typ = 3.5 pf High surge capability: 30 A - 8/20 µs Voltage: 8 V, 10.5 V, 16 V, and 24 V RoHS package Benefits
STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor
Low voltage PNP power transistor Features Low saturation voltage PNP transistor Applications Audio, power linear and switching applications Description The device is manufactured in planar technology with
V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC
PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000
PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits
Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
L78L. Positive voltage regulators. Description. Features
Positive voltage regulators Datasheet - production data Features Output current up to 100 ma Output voltages of 3.3; 5; 6; 8; 9; 10; 12; 15; 18; 24 V thermal overload protection Short-circuit protection
MC33079. Low noise quad operational amplifier. Features. Description
Low noise quad operational amplifier Datasheet production data Features Low voltage noise: 4.5 nv/ Hz High gain bandwidth product: 15 MHz High slew rate: 7 V/µs Low distortion: 0.002% Large output voltage
Description. Table 1. Device summary
2 A positive voltage regulator IC Description Datasheet - production data Features TO-220 Output current up to 2 A Output voltages of 5; 7.5; 9; 10; 12; 15; 18; 24 V Thermal protection Short circuit protection
SPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V
SPW3N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
Features. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -4V/-25, R DS(ON) = 4mΩ (typ.) @ V GS = -V R DS(ON) = 55mΩ (typ.) @ V GS = -5V Super High Dense Cell Design G D S Reliable and Rugged Lead Free
ETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards
ETP0-xx2 Protection for Ethernet lines Features Differential and common mode protection Telcordia GR089 Intrabuilding: 50 A, 2/0 µs ITU-T K20/2: 40 A, 5/30 µs Low capacitance: 3 pf max at 0 V UL94 V0 approved
IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features
FDD443 4V P-Channel PowerTrench MOSFET -4V, -4A, 44mΩ Features Max r DS(on) = 44mΩ at V GS = -V, I D = -6.7A Max r DS(on) = 64mΩ at V GS = -4.5V, I D = -5.5A High performance trench technology for extremely
UA741. General-purpose single operational amplifier. Features. Applications. Description. N DIP8 (plastic package)
General-purpose single operational amplifier Datasheet - production data N DIP8 (plastic package) D SO8 (plastic micropackage) Pin connections (top view) 1 - Offset null 1 2 - Inverting input 3 - Non-inverting
STLM20. Ultra-low current 2.4 V precision analog temperature sensor. Features. Applications
Ultra-low current 2.4 V precision analog temperature sensor Features Precision analog voltage output temperature sensor ±1.5 C maximum temperature accuracy at 25 C (±0.5 C typical) Ultra-low quiescent
Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
WFU4N65S Product Description
65V SuperJunction Power MOSFET Features Ultra low Rdson Ultra low gate charge (typ. Qg =3nC) % UIS tested RoHS compliant G General escription Power MOSFET is fabricated using advanced super junction technology.
Features. TA=25 o C unless otherwise noted
NDSAN N-Channel, Logic Level, PowerTrench MOSFET June NDSAN General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been
STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT
N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY
BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
L78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description
L78MxxAB L78MxxAC Precision 500 ma regulators Features Output current to 0.5 A Output voltages of 5; 6; 8; 9; 10; 12; 15; 18; 24 V Thermal overload protection Short circuit protection Output transition
Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units
N-Channel.5V Specified PowerTrench TM MOSFET April 999 General Description This N-Channel.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially