IRF840. N - CHANNEL 500V Ω - 8A - TO-220 PowerMESH MOSFET
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1 N - CHNNEL 500V Ω TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF V < 0.85 Ω 8 TYPICL R DS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CPBILITY 100% VLNCHE TESTED VERY LOW INTRINSIC CPCITNCES GTE CHRGE MINIMIZED DESCRIPTION This power MOSFET is designed using the company s coolidated strip layout-based MESH OVERLY process. This technology matches and improves the performances compared with standard parts from various sources. PPLICTIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-C CONVERTERS FOR WELDING EQUIPMENT ND UNINTERRUPTIBLE POWER SUPPLIES ND MOTOR DRIVER TO INTERNL SCHEMTIC DIGRM BSOLUTE MXIMUM RTINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 500 V V DGR Drain- gate Voltage (R GS = 20 kω) 500 V V GS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 o C 8.0 I D Drain Current (continuous) at T c = 100 o C 5.1 I DM( ) Drain Current (pulsed) 32 P tot Total Dissipation at T c = 25 o C 125 W Derating Factor 1.0 W/ o C dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ T stg Storage Temperature -65 to 150 T j Max. Operating Junction Temperature 150 ( ) Pulse width limited by safe operating area (1) I SD 8, di/dt 100 /µs, V DD V (BR)DSS, Tj T JMX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet o C o C
2 THERML DT R thj-case Rthj-amb R thc-sink T l Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W oc/w o C/W o C VLNCHE CHRCTERISTICS Symbol Parameter Max Value Unit IR valanche Current, Repetitive or Not-Repetitive 8.0 (pulse width limited by T j max) ES Single Pulse valanche Energy (starting T j = 25 o C, I D = I R, V DD = 50 V) 520 mj ELECTRICL CHRCTERISTICS (T case = 25 o C unless otherwise specified) OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µ VGS = V I DSS I GSS Zero Gate Voltage Drain Current (V GS = 0) Gate-body Leakage Current (V DS = 0) V DS = Max Rating V DS = Max Rating T c = 125 o C V GS = ± 20 V ± 100 n 1 50 µ µ ON ( ) Symbol Parameter Test Conditio Min. Typ. Max. Unit VGS(th) Gate Threshold V DS = V GS I D = 250 µ V Voltage R DS(on) Static Drain-source On V GS = 10V I D = Ω Resistance I D(on) On State Drain Current V DS > I D(on) x R DS(on)max VGS = 10 V 8.0 DYNMIC Symbol Parameter Test Conditio Min. Typ. Max. Unit g fs ( ) Forward Traconductance V DS > I D(on) x R DS(on)max I D = S C iss C oss C rss Input Capacitance Output Capacitance Reverse Trafer Capacitance V DS = 25 V f = 1 MHz V GS = pf pf pf
3 ELECTRICL CHRCTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditio Min. Typ. Max. Unit td(on) t r Q g Q gs Q gd Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 250 V ID = 4.3 R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) V DD = 400 V I D = 8.0 V GS = 10 V nc nc nc SWITCHING OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit t r(voff) t f t c Off-voltage Rise Time Fall Time Cross-over Time V DD = 400 V I D = 8 R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) SOURCE DRIN DIODE Symbol Parameter Test Conditio Min. Typ. Max. Unit I SD I SDM( ) Source-drain Current Source-drain Current (pulsed) VSD ( ) Forward On Voltage ISD = 8.0 VGS = V t rr Reverse Recovery I SD = 8.0 di/dt = 100 /µs 420 Time VDD = 100 V Tj = 150 o C Q rr I RRM Reverse Recovery Charge Reverse Recovery Current (see test circuit, figure 5) µc ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area Safe Operating rea Thermal Impedance
4 Output Characteristics Trafer Characteristics Traconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variatio
5 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics
6 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching nd Diode Recovery Times
7 TO-220 MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX C D D E F F F G G H L L L L L L DI D1 F G H2 C D E L2 G1 F1 Dia. L5 L7 L9 F2 L6 L4 P011C
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