IRF640N IRF640NS IRF640NL. HEXFET Power MOSFET V DSS = 200V. R DS(on) = 0.15Ω I D = 18A PD TO-220AB. D 2 Pak TO-262 IRF640N IRF640NL IRF640NS

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1 l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G HEXFET Power MOSFET D S PD IRF640N IRF640NS IRF640NL V DSS = 200V R DS(on) = 0.15Ω I D = 18A The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D 2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application. Absolute Maximum Ratings TO-220AB IRF640N D 2 Pak IRF640NS TO-262 IRF640NL Parameter Max. Units I T C = 25 C Continuous Drain Current, V 10V 18 I T C = 100 C Continuous Drain Current, V 10V 13 A I DM Pulsed Drain Current 72 P C = 25 C Power Dissipation 150 W Linear Derating Factor 1.0 W/ C V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy 247 mj I AR Avalanche Current 18 A E AR Repetitive Avalanche Energy 15 mj dv/dt Peak Diode Recovery dv/dt 8.1 V/ns T J Operating Junction and -55 to 175 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf in (1.1N m) /09/00

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 200 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.25 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 0.15 Ω V GS = 10V, I D = 11A ƒ V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA g fs Forward Transconductance 6.8 S V DS = 50V, I D = 11A ƒ I DSS Drain-to-Source Leakage Current 25 V µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 100 V GS = 20V na Gate-to-Source Reverse Leakage -100 V GS = -20V Q g Total Gate Charge 67 I D = 11A Q gs Gate-to-Source Charge 11 nc V DS = 160V Q gd Gate-to-Drain ("Miller") Charge 33 V GS = 10V, See Fig. 6 and 13 t d(on) Turn-On Delay Time 10 V DD = 100V t r Rise Time 19 I D = 11A ns t d(off) Turn-Off Delay Time 23 R G = 2.5Ω t f Fall Time 5.5 R D = 9.0Ω, See Fig. 10 ƒ Between lead, L D Internal Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 1160 V GS = 0V C oss Output Capacitance 185 V DS = 25V C rss Reverse Transfer Capacitance 53 pf ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 18 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 72 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 11A, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 11A Q rr Reverse Recovery Charge nc di/dt = 100A/µs ƒ t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.0 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 R θja Junction-to-Ambient (PCB mount)

3 I D, Drain-to-Source Current (A) VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, Drain-to-Source Current (A) VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM4.5V 4.5V 20µs PULSE WIDTH 0.01 T J = 25 C V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH 0.1 T J = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) T J= 175 C T J = 25 C V DS = 50V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 3.5 I D = 18A V GS = 10V T J, Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance(pF) IRF640N/S/L Ciss Coss Crss V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd V GS, Gate-to-Source Voltage (V) I D = 11A V DS= 160V V DS= 100V V DS= 40V V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) T J = 175 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms 10ms TC = 25 C TJ = 175 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 I D, Drain Current (A) I D, Drain Current (A) R D V DS V GS D.U.T. R G 10V Pulse Width 1 µs Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% V - DD T C, Case Temperature ( C) T C, Case Temperature ( C) 10% V GS t d(on) t r t d(off) t f Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response(Z thjc ) D = SINGLE PULSE t (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J= P DM x Z thjc TC t 1, Rectangular Pulse Duration (sec) PDM t1 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 R G V DS 20V tp Fig 12a. Unclamped Inductive Test Circuit tp I AS L D.U.T 0.01Ω 15V V (BR)DSS DRIVER - V DD A E AS, Single Pulse Avalanche Energy (mj) I D TOP 4.4A 7.6A BOTTOM 11A Starting T, Junction Temperature ( J C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 12V.2µF.3µF 10 V Q GS Q GD D.U.T. V - DS V GS V G 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6

7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =10V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET Power MOSFETs 7

8 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) (.415) (.405) 3.78 (.149) 3.54 (.139) - A (.185) 4.20 (.165) - B (.052) 1.22 (.048) (.600) (.584) (.255) 6.10 (.240) (.045) MIN LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN (.555) (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 1.15 (.045) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 2.92 (.115) 2.64 (.104) 0.55 (.022) 0.46 (.018) 2.54 (.100) 2X NOTES: 1 DIMENSIO NING & TOLERANCING PER ANSI Y14.5M, O UTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRF B 1M A PART NUMBER DATE CODE (YYW W ) YY = YEAR WW = WEEK 8

9 D 2 Pak Package Outline 1.40 (.055) MAX (.415) (.405) - A (.185) 4.20 (.165) - B (.052) 1.22 (.048) (.400) REF (.255) 6.18 (.243) 1.78 (.070) 1.27 (.050) (.610) (.580) 2.79 (.110) 2.29 (.090) 5.28 (.208) 4.78 (.188) 2.61 (.103) 2.32 (.091) 3X 1.40 (.055) 1.14 (.045) 5.08 (.200) 3X 0.93 (.037) 0.69 (.027) 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) 8.89 (.350) REF (.010) M B A M MINIMUM RECOMMENDED FOOTPRINT (.450) NOTES: 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS. LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 8.89 (.350) 3.81 (.150) (.700) 2.08 (.082) 2X 2.54 (.100) 2X D 2 Pak Part Marking Information INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE F530S B 1M PART NUMBER DATE CODE (YYW W ) YY = YEAR WW = WEEK 9 A

10 TO-262 Package Outline TO-262 Part Marking Information 10

11 D 2 Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065) (.429) (.421) (.457) (.449) (.634) (.626) 1.75 (.069) 1.25 (.049) (.609) (.601) (.957) (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) M AX (2.362) MIN. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 4.2mH R G = 25Ω, I AS = 11A. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.039) (.961) 3 ƒ Pulse width 400µs; duty cycle 2%. This is only applied to TO-220AB package This is applied to D 2 Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. I SD 11A, di/dt 344A/µs, V DD V (BR)DSS, T J 175 C (1.197) MAX. 4 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: 44 (0) IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 157, Bad Homburg Tel: 49 (0) IR ITALY: Via Liguria 49, Borgaro, Torino Tel: IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0) IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore Tel: 65 (0) IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, Tel: 886-(0) Data and specifications subject to change without notice. 10/

12 This datasheet has been download from: Datasheets for electronics components.