BAS19L, BAS20L, BAS21L, BAS21DW5. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE
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1 BAS9L, BAS20L, BAS2L, BAS2DW High Voltage Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ0 Qualified and PPAP Capable MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage BAS9 BAS20 BAS2 Repetitive Peak Reverse Voltage BAS9 BAS20 BAS2 V R V RRM Continuous Forward Current I F 200 madc Peak Forward Surge Current I FM(surge) 62 madc Junction and Storage Temperature Range T J, T stg to +0 C Power Dissipation (Note ) P D 8 mw Electrostatic Discharge ESD HM < 00 V HIGH VOLTAGE SWITCHING DIODE 2 CATHODE CATHODE CATHODE (TO26) CASE 8 STYLE 8 SC88A ANODE ANODE ANODE MARKING DIAGRAMS Jx M 2 MM < 00 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Mounted on FR Board =.0 x 0.7 x in. SC88A (SOT) CASE 9A Jx M 2 x = P, R, or S P = BAS9L R = BAS20L S = BAS2L or BAS2DW M = Date Code = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon the manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 20 March, 20 Rev. 6 Publication Order Number: BAS9LT/D
2 BAS9L, BAS20L, BAS2L, BAS2DW THERMAL CHARACTERISTICS () Characteristic Symbol Max Unit Total Device Dissipation FR Board (Note 2) T A = 2 C Derate above 2 C P D 22.8 mw mw/ C Thermal Resistance JunctiontoAmbient () R JA 6 C/W Total Device Dissipation Alumina Substrate (Note ) T A = 2 C Derate above 2 C P D mw mw/ C Thermal Resistance JunctiontoAmbient R JA 7 C/W Junction and Storage Temperature Range T J, T stg to +0 C THERMAL CHARACTERISTICS (SC88A) Characteristic Symbol Max Unit Power Dissipation (Note ) P D 8 mw Thermal Resistance JunctiontoAmbient Derate Above 2 C R JA 28.0 C/W mw/ C Maximum Junction Temperature T Jmax 0 C Operating Junction and Storage Temperature Range T J, T stg to +0 C 2. FR = in.. Alumina = in. 99.% alumina.. Mounted on FR Board =.0 x 0.7 x in. ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Voltage Leakage Current (V R = 00 ) BAS9 (V R = 0 ) BAS20 (V R = 200 ) BAS2 (V R = 00, T J = 0 C) BAS9 (V R = 0, T J = 0 C) BAS20 (V R = 200, T J = 0 C) BAS2 I R Adc Reverse Breakdown Voltage (I BR = 00 Adc) BAS9 (I BR = 00 Adc) BAS20 (I BR = 00 Adc) BAS2 V (BR) Forward Voltage (I F = 00 madc) (I F = 200 madc) Diode Capacitance (V R = 0, f =.0 MHz) C D.0 pf Reverse Recovery Time (I F = I R = 0 madc, I R(REC) =.0 madc, R L = 00) t rr 0 ns V F.0.2 2
3 BAS9L, BAS20L, BAS2L, BAS2DW V 2.0 k 00 H 0. F I F 0. F t r t p t 0% I F t rr t 0 OUTPUT PULSE GENERATOR D.U.T. 0 INPUT SAMPLING OSCILLOSCOPE V R 90% INPUT SIGNAL I R I R(REC) =.0 ma OUTPUT PULSE (I F = I R = 0 ma; MEASURED at I R(REC) =.0 ma) Notes:. A 2.0 k variable resistor adjusted for a Forward Current (I F ) of 0 ma. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 0 ma. Notes:. t p» t rr Figure. Recovery Time Equivalent Test Circuit IF, FORWARD CURRENT (ma) 00 0 C 2 C 8 C 0 C 2 C.0 - C -0 C V F, FORWARD VOLTAGE (V) V R, REVERSE VOLTAGE (V) I R, REVERSE CURRENT (μa) 0 0 C 2 C.0 8 C 0. C C 260 Figure 2. V F vs. I F Figure. I R vs. V R CD, DIODE CAPACITANCE (pf) Cap V R, REVERSE VOLTAGE (V) Figure. Capacitance
4 BAS9L, BAS20L, BAS2L, BAS2DW ORDERING INFORMATION BAS9LTG Device Package Shipping BAS9LTG NSVBAS9LTG* BAS20LTG BAS20LTG NSVBAS20LTG* SBAS20LTG* BAS2LTG SBAS2LTG* BAS2LTG SBAS2LTG* BAS2DWTG SBAS2DWTG* SC88A SC88A 0000 / Tape & Reel 0000 / Tape & Reel 0000 / Tape & Reel 0000 / Tape & Reel 0000 / Tape & Reel SBAS2DWTG* SC88A 0000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. *S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ0 Qualified and PPAP Capable.
5 BAS9L, BAS20L, BAS2L, BAS2DW PACKAGE DIMENSIONS (TO26) CASE 808 ISSUE AP A E A D 2 e b HE SEE VIEW C L L VIEW C c 0.2 NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A b c D E e L L H E STYLE 8: PIN. ANODE 2. NO CONNECTION. CATHODE SOLDERING FOOTPRINT* SCALE 0: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
6 BAS9L, BAS20L, BAS2L, BAS2DW PACKAGE DIMENSIONS S A G B 2 D PL 0.2 (0.008) M B M SC88A (SC70/SOT) CASE 9A02 ISSUE K N NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, CONTROLLING DIMENSION: INCH.. 9A0 OBSOLETE. NEW STANDARD 9A02.. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G BSC 0.6 BSC H J K N REF 0.20 REF S C J H K SOLDERING FOOTPRINT* SCALE 20: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado 8027 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative BAS9LT/D
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