ZHB6790 SM-8 BIPOLAR TRANSISTOR H-BRIDGE ABSOLUTE MAXIMUM RATINGS. PRELIMINARY DATA SHEET ISSUE B JULY 1997

Transcription

1 SM-8 BIPOLAR TRANSISTOR H-BRIDGE PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 4 supply * 2 Amp continuous rating PARTMARKING DETAIL ZHB679 ZHB679 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPNs PNPs UNIT Collector-Base oltage CBO 5-5 Collector-Emitter oltage CEO 4-4 Emitter-Base oltage EBO 5-5 Peak Pulse Current I CM 6-6 A Continuous Collector Current I C 2-2 A Operating and Storage Temperature Range T j :T stg -55 to +15 C SCHEMATIC DIAGRAM CONNECTION DIAGRAM E1, E4 B1 Q1 C1, C2 Q4 B4 C3, C4 C1,C2 E1,E4 C3,C4 B B1 B2 E2,E3 B3 B2 Q2 Q3 B3 E2, E3

2 ZHB679 THERMAL CHARACTERISTICS PARAMETER SYMBOL ALUE UNIT Total Power Dissipation at T amb = 25 C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Derate above 25 C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Thermal Resistance - Junction to Ambient* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally P tot W W mw/ C mw/ C C/ W C/ W us 2. D=t1 t1 tp tp D=1 D=.5 D=.2 D=.1 D=.5 Single Pulse 1ms 1ms 1ms 1s 1s 1s Pulse Width Transient Thermal Resistance Single Transistor "On" us 1 t1 tp 1ms D=t1 tp 1ms 1ms 1s Pulse Width D=1 D=.5 D=.2 D=.1 D=.5 Single Pulse 1s 1s Transient Thermal Resistance Q1 and Q3 or Q2 and Q4 "On" 1.5 Dual Transistors Single Transistor 1. 1 Full Copper Minimum Copper Dual Transistors Single Transistor T - Temperature ( C) Derating curve Pcb Area (inches squared) Pd v Pcb Area Comparison * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. "Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs rurned on.

3 ZHB679 PNP TRANSISTORS ELECTRICAL CHARACTERISTICS (at T amb = 25 C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown oltage Collector-Emitter Breakdown oltage Emitter-Base Breakdown oltage (BR)CBO -5 I C =-1µA (BR)CEO -4 I C =-1mA* (BR)EBO -5 I E =-1µA Collector Cutoff Current I CBO -.1 µa CB =-3 Emitter Cutoff Current I EBO -.1 µa EB =-4 Collector-Emitter Saturation oltage CE(sat) I C =-1mA, I B =-.5mA* I C =-5mA, I B =-5mA* I C =-1A, I B =-1mA* I C =-2A, I B =-5mA* Base-Emitter Saturation oltage Base-Emitter Turn-On oltage BE(sat) -1. I C =-1A, I B =-1mA* BE(on) -.75 I C =-1A, CE =-2* Static Forward Current Transfer Ratio h FE I C =-1mA, CE =-2 I C =-1A, CE =-2* I C =-2A, CE =-2* Transition Frequency f T 1 MHz I C =-5mA, CE =-5 f=5mhz Input Capacitance C ibo 225 pf EB =-.5, f=1mhz Output Capacitance C obo 24 pf CB =-1, f=1mhz Switching Times t on 35 t off 6 ns I C =-5mA, I B1 = -5mA I B2 =-5mA, CC =-1 *Measured under pulsed conditions. Pulse width=3µs. Duty cycle 2%.

4 ZHB679 NPN TRANSISTORS ELECTRICAL CHARACTERISTICS (at T amb = 25 C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown oltage Collector-Emitter Breakdown oltage Emitter-Base Breakdown oltage (BR)CBO 5 I C =1µA (BR)CEO 4 I C =1mA* (BR)EBO 5 I E =1µA Collector Cutoff Current I CBO.1 µa CB =35 Emitter Cutoff Current I EBO.1 µa EB =4 Collector-Emitter Saturation oltage CE(sat) I C =1mA, I B =.5mA* I C =5mA, I B =2.5mA* I C =1A, I B =5mA* I C =2A, I B =3mA* Base-Emitter Saturation oltage Base-Emitter Turn-On oltage BE(sat).9 I C =1A, I B =1mA* BE(on).73 I C =1A, CE =2* Static Forward Current Transfer Ratio h FE I C =1mA, CE =2* I C =1A, CE =2* I C =2A, CE =2* Transition Frequency f T 15 MHz I C =5mA, CE =5 f=5mhz Input Capacitance C ibo 2 pf EB =.5, f=1mhz Output Capacitance C obo 16 pf CB =1, f=1mhz Switching Times t on 33 t off 13 ns I C =5mA, I B! =5mA I B2 =5mA, CC =1 *Measured under pulsed conditions. Pulse width=3µs. Duty cycle 2%.

5 h - Normalised Gain - (olts) PNP TRANSISTOR TYPICAL CHARACTERISTICS ZHB IC/IB=1 IC/IB=4 IC/IB=1 Tamb=25 C C IC/IB=1 - (olts) CE(sat) v IC CE(sat) v IC +1 C CE= C IC/IB=1 - (olts) h - Typical Gain hfe v IC BE(sat) v IC +1 C CE=2 - (olts) BE(on) v IC

6 - (olts) - (olts) - (olts) ZHB679 NPN TRANSISTOR TYPICAL CHARACTERISTICS.8 IC/IB=2 IC/IB=1 IC/IB=1 Tamb=25 C.8 +1 C IC/IB= CE(sat) v IC CE(sat) v IC h - Normalised Gain +1 C CE=2 1.5K +1 C IC/IB=1 1. h - Typical Gain 1K - (olts) hfe v IC BE(sat) v IC +1 C CE= BE(on) v IC

7 SAFE OPERATING AREA ZHB m DC 1s 1ms 1ms 1ms 1µs 1m DC 1s 1ms 1ms 1ms 1µs 1m 1m CE - Collector Emitter oltage () Safe Operating Area (Full Copper) see note below 1m 1m CE - Collector Emitter oltage () Safe Operating Area (Minimum Copper) see note below Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the power dissipation capability of the energised ZHB part (opposing NPN-PNP switched on) when mounted on a 5mm x 5mm FR4 PCB. The two cases show: i) full copper present and ii) with minimal copper present - this being defined as an SM-8 footprint with 1.5mm tracks to the edge of the PCB. For example, on a 5mm x 5mm full copper PCB, the ZHB679 will safely dissipate 2W under DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can be tolerated for pulsed operation, while the shorter pulse widths (1µs and 1ms) being relevant for assessment of switching conditions. The ZHB679 H -Bridge can be modelled within SPICE using the following transistor models configured in the standard H -Bridge topology, as shown in the schematic diagram of this datasheet. ZETEX H Bridge NPN transistors Spice model Last revision 4/7/97.MODEL H679N NPN IS =2.55E-12 NF =1.58 BF =136 IKF=1.3 AF=35 +ISE=.24E-12 NE =1.38 NR =1.1 BR =125 IKR=1 AR=8 ISC=.435E-12 +NC =13 RB =.2 RE =.43 RC =.4 CJC=54.3E-12 MJC=.475 JC=.765 +CJE=247E-12 TF =.851E-9 TR =15.7E-9 * * *ZETEX H Bridge PNP transistors Spice model Last revision 4/7/97.MODEL H679P PNP IS=1.9684E-12 NF=1.12 BF=65 IKF=1.7 AF=23.5 +ISE= E-14 NE=7256 NR=1.391 BR=27 IKR=.2 AR=3 +ISC=5.4933E-14 NC= RB=.55 RE=.49 RC=.78 CJC=96E-12 +MJC=.495 JC=.67 CJE=275E-12 TF=.75E-9 TR=1.8E-9 * (C) 1997 ZETEX PLC The copyright in these models and the design embodied belong to Zetex PLC ( Zetex ). They are supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The models are believed accurate but no condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields New Road, Chadderton,

8 ZHB679 He E A A1 D b e2 e1 o 45 c 3 Lp Dim Millimetres Inches Min Typ Max Min Typ Max A A b.7.28 c D E e e He Lp.9.35 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44) (Sales), (44) (General Enquiries) Fax: (44) Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße Mall Drive, Unit Metroplaza, Tower 2 agents and distributors in D München Commack NY Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong Zetex plc 1997 Telefon: (49) Telephone: (516) Telephone:(852) Internet: Fax: (49) Fax: (516) Fax: (852) This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.