CP25TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 25 Amperes/1200 Volts

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1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania (7) 9-77 Amperes/1 Volts 1/ Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A.. B C.±. 1.7±. D E.3 7. F.1±.1.±.3 G.3±.1 7.±.3 H.±.1.±.3 J.±..±. K.7. L.9±.1.3±.3 M.9±. 3.9±. N P.9. Q.±..7±. R.1. Dimensions Inches Millimeters S.±. 1.±. T - - U Min. Min. V W. 1.1 X. Max.. Max. Y. 1. Z.3±..±. AA. Dia.. Dia. AB.1 Dia.. Dia. AC.3 Deep. Deep AD.7 1. AE.3. AF. 1.1 AG.±..±. Description: s are low profile, thermally efficient, transfer mold modules. Each module consists of a threephase diode converter section, a three-phase inverter section and a brake circuit. Open emitters allow the designer to sense the current in each phase leg for accurate and low cost current sensing. A thermistor is included in the package for sensing the baseplate temperature. th Generation CSTBT chips yield low loss. The module is completely Pb-Free and hence RoHS compliant. Features: Compact Package Only.7mm Thick One Package for Entire Family Thermistor Open Emitters Applications: AC Motor Control Servo Motors Robotics HVAC Inverters Ordering Information: is a 1 Volt, Ampere module. 1

2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania (7) 9-77 Amperes/1 Volts Absolute Maximum Ratings, Tj = C unless otherwise specified Ratings Symbol Units Junction Temperature Tj - to 1 C Storage Temperature Tstg - to 1 C Mounting Torque, M Mounting Screws 13 in-lb Module Weight Typical Grams Isolation Voltage (Hz, Sinusoidal, AC 1 Min., Applied Between Pins and Heatsink) VISO Volts Inverter Part Collector-Emitter Voltage (G-E Short) VCES 1 Volts Gate-Emitter Voltage (C-E Short) VGES ± Volts Collector Current* (DC, TC = 7 C) IC Amperes Peak Collector Current** (Pulse) ICM Amperes Maximum Collector Dissipation (TC = C) PC 13 Watts Emitter Current* (DC, TC = 3 C) IE*** Amperes Peak Emitter Current** (Pulse) IEM*** Amperes Brake Part Collector-Emitter Voltage (G-E Short) VCES 1 Volts Gate-Emitter Voltage (C-E Short) VGES ± Volts Collector Current* (DC, TC = 1 C) IC 1 Amperes Peak Collector Current** (Pulse) ICM 3 Amperes Maximum Collector Dissipation (TC = C, Tj < 1 C) PC 113 Watts Repetitive Peak Reverse Voltage (Clamp Diode Part) VRRM 1 Volts Forward Current (Clamp Diode Part, Tj < 1 C) IFM 1 Amperes Converter Part Repetitive Peak Reverse Voltage VRRM 1 Volts Recommended AC Input Voltage) Ea Volts DC Output Current (Three-phase Rectifying Circuit) IO Amperes Surge Forward Current (1/ Cycle at Hz, Peak Value, Non-repetitive) IFSM 31 Amperes I t for Fusing (Value for 1 Cycle of Surge Current) I t 1 A s *TC is measured just underneath the power chip. **Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max.) rating. ***IE, VEC, trr, and Qrr represent characteristics of the anti-paralleled emitter-to-collector free-wheel diode (FWDi). 1/

3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania (7) 9-77 Amperes/1 Volts Electrical Characteristics, Tj = C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Inverter Part Collector-Cutoff Current ICES VCE = VCES, VGE = V 1. ma Gate-Emitter Threshold Voltage VGE(th) IC =.ma, VCE = 1V. 7.. Volts Gate-Emitter Cutoff Current IGES VGE = V, VCE = V 1. µa Collector-Emitter VCE(sat) IC = A, VGE = 1V, Tj = C 1.. Volts Saturation Voltage* IC = A, VGE = 1V, Tj = 1 C. Volts Input Capacitance Cies.9 nf Output Capacitance Coes VCE = 1V, VGE = V, f = 1MHz.3 nf Reverse Transfer Capacitance Cres.1 nf Total Gate Charge QG VCC = V, IC = A, VGE = 1V 17 nc Turn-on Delay Time td(on) 1 ns Turn-on Rise Time tr VCC = V, IC = A, 7 ns Turn-off Delay Time td(off) VGE = ±1V, RG = 13Ω, 3 ns Turn-off Fall Time tf Tj = C, ns Reverse Recovery Time** trr ns Reverse Recovery Charge** Qrr. µc Emitter-Collector Voltage** VEC IE = A, VGE = V 3.. Volts External Gate Resistance Rg Ω Brake Part Collector-Cutoff Current ICES VCE = VCES, VGE = V 1. ma Gate-Emitter Threshold Voltage VGE(th) IC = 1.mA, VCE = 1V. 7.. Volts Gate-Emitter Cutoff Current IGES VGE = V, VCE = V 1. µa Collector-Emitter VCE(sat) IC = 1A, VGE = 1V, Tj = C 1.. Volts Saturation Voltage* IC = 1A, VGE = 1V, Tj = 1 C. Volts Input Capacitance Cies 3.1 nf Output Capacitance Coes VCE = V, VGE = V, f = 1MHz. nf Reverse Transfer Capacitance Cres. nf Total Gate Charge QG VCC = V, IC = 1A, VGE = 1V 9 nc Turn-on Delay Time td(on) 1 ns Turn-on Rise Time tr VCC = V, IC = 1A, 7 ns Turn-off Delay Time td(off) VGE = ±1V, RG = Ω, 3 ns Turn-off Fall Time tf Tj = C, ns Reverse Recovery Time trr ns Reverse Recovery Charge Qrr.3 µc Forward Voltage Drop VFM IF = 1A, Clamp Diode Part.7 3. Volts External Gate Resistance Rg Ω *Pulse width and repetition rate should be such as to cause negligible temperature rise. **TC is measured just underneath the power chip. 1/ 3

4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania (7) 9-77 Amperes/1 Volts Electrical Characteristics, Tj = C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Converter Part Repetitive Reverse Current IRRM VR = VRRM, Tj = 1 C 1. ma Forward Voltage Drop VFM IF = A Volts Thermal and Mechanical Characteristics, Tj = C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Common Rating Contact Thermal Resistance Rth(c-f) Case-to-Fin, Thermal Grease Applied.7 C/W Inverter Part Thermal Resistance, Junction to Case Rth(j-c)Q IGBT Part, Per 1/ Module.9 C/W Thermal Resistance, Junction to Case Rth(j-c)D FWDi Part, Per 1/ Module 1. C/W Brake Part Thermal Resistance, Junction to Case Rth(j-c)Q IGBT Part 1.1 C/W Thermal Resistance, Junction to Case Rth(j-c)D FWDi Part 1.7 C/W Converter Part Thermal Resistance, Junction to Case Rth(j-c) Per 1/ Module 1.1 C/W NTC Thermistor Part Resistance Rth TC = C kω B Constant* B(/1) Resistance at C, 1 C 3 K *Thermistor resistance RX at arbitrary temperature TX(K) can be calculated with the B constant formula RX = R exp[b(/1) ( 1 1 )] TX T where R is the resistance at TC = C, T = 9K. 1/

5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania (7) 9-77 Amperes/1 Volts COLLECTOR CURRENT, I C, (AMPERES) 3 1 OUTPUT CHARACTERISTICS V GE = 19V VOLTAGE, V CE, (VOLTS) SATURATION VOLTAGE, V CE(sat), (VOLTS) V GE = 1V SATURATION VOLTAGE, V EC, (VOLTS) COLLECTOR-CURRENT, I C, (AMPERES) EMITTER-CURRENT, I E, (AMPERES) CAPACITANCE VS. V CE SWITCHING TIME VS. COLLECTOR CURRENT SWITCHING TIME VS. GATE RESISTANCE C ies CAPACITANCE, C ies, C oes, C res, (pf) 1 3 C oes 1 C res V GE = V VOLTAGE, V CE, (VOLTS) SWITCHING TIME, (ns) 1 V CC = V V GE = ±1V 1 1 R G = 13Ω t f t r COLLECTOR CURRENT, I C, (AMPERES) SWITCHING TIME, (ns) 1 V CC = V V GE = ±1V I C = A t f t r GATE RESISTANCE, R G, (Ω) SWITCHING LOSS, E on, E off, E rr, (mj/pulse) 1 SWITCHING LOSS VS. COLLECTOR CURRENT V CC = V V GE = ±1V R G = 13Ω E rr E on E off 1 3 COLLECTOR CURRENT, I C, (AMPERES) SWITCHING LOSS, E on, E off, E rr, (mj/pulse) SWITCHING LOSS VS. GATE RESISTANCE V CC = V V GE = ±1V I C = A E on E off E rr 1 1 GATE RESISTANCE, R G, (Ω) 1 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - IGBT & FWDi) 1- Single Pulse T C = C IGBT FWDi TIME, (s) 1/

6 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania (7) 9-77 Amperes/1 Volts GATE-EMITTER VOLTAGE, V GE, (VOLTS) GATE CHARGE I 1 C = A 1 V CC = V 1 V 1 CC = V GATE CHARGET, Q G, (nc) NTC THERMISTOR RESISTANCE, R th, (kω) NTC THERMISTOR TEMPERATURE CHARACTERISTICS (TYPICAL) TEMPERATURE, T C, ( C) DIODE FORWARD VOLTAGE, V F, (VOLTS) DIODE FORWARD VOLTAGE CHARACTERISTICS (CONVERTER PART - TYPICAL). V GE = 1V. 1 3 DIODE FORWARD CURRENT, I F, (AMPERES) COLLECTOR-CURRENT, I C, (AMPERES) (BRAKE PART - TYPICAL) V GE = 1V COLLECTOR-CURRENT, -I C, (AMPERES) (BRAKE PART - TYPICAL) 3 T j = 1 C SATURATION VOLTAGE, V CE(sat), (VOLTS) SATURATION VOLTAGE, V EC, (VOLTS) 1/