200 VOLTS,150 AMPS LOW REVERSE LEAKAGE SCHOTTKY DIODE
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1 Available on commercial versions 200 VOLTS,150 AMPS LOW REVERSE LEAKAGE SCHOTTKY DIODE DESCRIPTION The 1N6909UTK3AS device polarity is anode-to-strap (standard) and is also available optionally in 1N6909UTK3CS as cathode-to-strap. This part can also be ordered in a strapless version. Up-screening for high-reliability applications is also available. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website FEATURES JEDEC registered 1N6909. Oxide passivated structure. Guard ring protection for increased reverse energy capability. Epitaxial structure minimizes forward voltage drop. Hermetically sealed, low profile ceramic surface mount power package. Up-screening available in reference to MIL-PRF (see part nomenclature for all available options). RoHS compliant versions available (commercial grade only). Screening in reference to MIL-PRF available ThinKey TM 3 Package APPLICATIONS / BENEFITS Low package inductance. Very low thermal resistance. Also available with no strap as 1N6909UTK3 by special request. Mechanically rugged. MAXIMUM T C = +25 C, unless otherwise noted Parameters / Test Conditions Symbol Value Unit Junction and Storage Temperature Range T j and T stg -65 to +150 C Thermal Resistance, Junction to Case (Anode-to-Strap) R ӨJC 0.20 C/W Thermal Resistance, Junction to Case (Cathode-to-Strap, Also applicable to strapless option) R ӨJC 0.35 C/W Peak Repetitive Reverse Voltage V RRM 200 V Working Peak Reverse Voltage V RWM 200 V DC Blocking Voltage V R 200 V Average Rectified Forward Current, T C 125 C I F(ave) 150 A Derating, Forward Current, T C 125 C dl F / dt 4 A/ C Non-repetitive Peak Surge Current (tp = 8.3 ms, half sine-wave) I FSM 2000 A Peak Repetitive Reverse Surge Current (tp = 1 µs, f = 1 khz) I RRM 2 A MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 1 of 8
2 MECHANICAL and PACKAGING CASE: Ceramic-molybdenum Thinkey 3. TERMINALS: SnPb solder or RoHS compliant matte/tin (on commercial grade only) coated. MARKING: Part number and polarity symbol. POLARITY: Standard is anode to strap. Reverse is cathode to strap. WEIGHT: Approximately 1.7 grams. See Package Dimensions on last page. PART NOMENCLATURE MQ 1N6909 U TK 3 AS (e3) Reliability Level MQ (reference JAN) MX (reference JANTX) MV (reference JANTXV) Blank = Commercial JEDEC type number (See Electrical Characteristics table) Surface Mount package RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-rohs compliant Polarity AS=Anode to Strap (standard) CS=Cathode-to-Strap Blank=No Strap Package Level Package Class Symbol f I F I R T C t p V R frequency Forward current, dc Reverse current, dc Case temperature Pulse time Reverse Voltage, dc SYMBOLS & DEFINITIONS Definition T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 2 of 8
3 ELECTRICAL T A = +25 C, unless otherwise noted Parameters / Test Conditions Symbol MIN TYP MAX Unit Reverse (Leakage) Current V R = 200 V, Tc = 25 C I R µa V R = 200 V, Tc = +125 C I R ma Forward Voltage Pulse test, pulse width = 300 µs; duty cycle 2% I F = 10 A, T C = 25 C V F mv I F = 50 A, T C = 25 C V F mv I F = 100 A, T C = 25 C V F mv I F = 150 A, T C = 25 C V F mv I F = 200 A, T C = 25 C V F mv I F = 100 A, T C = -55 C V F mv I F = 150 A, T C = +125 C V F mv Junction Capacitance V R = 10 V C j pf V R = 5 V C j pf Breakdown Voltage I R = 1 ma, T C = 25 C B VR V I R = 1 ma, T C = -55 C V T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 3 of 8
4 GRAPHS IF (Amps) V F (Volts) FIGURE 1 Schottky V F I F Characteristics T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 4 of 8
5 GRAPHS (continued) IR (Amps) V R (Volts) FIGURE 2 Schottky V R vs I R T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 5 of 8
6 GRAPHS (continued) Capacitance (pf) V R (Volts) FIGURE 3 V R vs Total Capacitance (T J = 25 ºC) T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 6 of 8
7 PACKAGE DIMENSIONS Dimensions Ltr Inch Millimeters Min Max Min Max BL BT BLT C E.038 NOM.97 NOM F LC.040 NOM 1.02 NOM LF LT LW NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. SEE PAD LAYOUT ON NEXT PAGE. T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 7 of 8
8 PAD LAYOUT T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 8 of 8
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings
PD - 97500A IRF620PbF V DS 20 V HEXFET Power MOSFET R DS(on) max (@ = 4.5V) 2.45 mω 6 R DS(on) max (@ = 2.5V) 2.75 mω 6 6 Q g (typical) 30 nc * SO-8 I D (@T A = 25 C) 27 A Applications OR-ing or hot-swap
IRGP4068DPbF IRGP4068D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature
Standard Recovery Diodes, (Stud Version), 40 A
Standard Recovery Diodes, (Stud ersion), 40 A S- FEATURES High surge current capability Stud cathode and stud anode version Leaded version available DO-203AB (DO-5) PRODUCT SUMMARY I F(A) 40 A Package
IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
LC03-6. Low Capacitance TVS for High-Speed Data Interfaces. Features. Description. Mechanical Characteristics. Applications
Description The LC0- transient voltage suppressor is designed to protect components which are connected to high speed telecommunication lines from voltage surges caused by lightning, electrostatic discharge
1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007. Axial Lead Standard Recovery Rectifiers
1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 Axial ead Standard Recovery Rectifiers This data sheet provides information on subminiature size, axial lead mounted rectifiers for general purpose
logic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope
Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous
Ultrafast, Soft Recovery Diode (N/C)
Bulletin PD -060 rev. C /00 HFA06TB0S.. Series HEXFRED TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits
BTA40, BTA41 and BTB41 Series
BTA4, BTA41 and BTB41 Series STANDARD 4A TRIACS Table 1: Main Features Symbol Value Unit I T(RMS) 4 A V DRM /V RRM 6 and 8 V I T (Q1 ) 5 ma DESCRIPTION Available in high power packages, the BTA/ BTB4-41
IR Edixeon Emitter. 1W Edixeon
High Power LED 1W Edixeon IR Edixeon Emitter Date:2006/06/01 Version:2.0 Device No. : 3-RD-01-E0009 Believe SRL Via Lago di Trasimeno, 21 - Schio (VI) - Italy TEL: +39/0445/579035 FAX: +39/0445/575708
RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000
PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits
BAV70... BAV70 BAV70W BAV70S BAV70U. Type Package Configuration Marking BAV70 BAV70S BAV70U BAV70W
BAV7... Silicon Switching Diode For highspeed switching applications Common cathode configuration BAV7S / U: For orientation in reel see package information below Pbfree (RoHS compliant) package ) Qualified
NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features
NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices
How To Test A Sidactor Series For A Power Supply
SDP Series - SOT23-5 RoHS Pb e3 Description This new SIDACtor series is targeted for the tertiary or line driver side protection position for VDSL2+, ADSL2 applications and general I/O protection functions.
AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance
BTB04-600SL STANDARD 4A TRIAC MAIN FEATURES
BTB-6SL STANDARD A TRIAC MAIN FEATURES A Symbol Value Unit I T(RMS) A V DRM /V RRM 6 V I GT(Q) ma G A A DESCRIPTION The BTB-6SL quadrants TRIAC is intended for general purpose applications where high surge
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF55 High Speed Infrared Emitting Diode, 87 nm, GaAlAs Double Hetero 26 DESCRIPTION TSFF55 is an infrared, 87 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high
I T(AV) off-state voltages. PINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g
BT9 series GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristors in a SYMBOL PRMETER MX. MX. MX. UNIT plastic envelope, intended for use in general purpose switching and phase BT9
High flux for outdoor applications
General Illumination LUXEON R High flux for outdoor applications LUXEON R brings illumination grade LED light sources to outdoor and industrial lighting applications and makes it easier than ever to design
5STP 21H4200 Old part no. TV 989-2100-42
Phase Control Thyristor Properties 5STP 1H Old part no. T 989-1- Key Parameters High operational capability DRM, RRM = Possibility of serial and parallel connection I TAm = 19 A Applications I TSM = 3
2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS
NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general purpose amplifier and low frequency switching applications. High DC Current Gain h FE = 3000