200 VOLTS,150 AMPS LOW REVERSE LEAKAGE SCHOTTKY DIODE

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1 Available on commercial versions 200 VOLTS,150 AMPS LOW REVERSE LEAKAGE SCHOTTKY DIODE DESCRIPTION The 1N6909UTK3AS device polarity is anode-to-strap (standard) and is also available optionally in 1N6909UTK3CS as cathode-to-strap. This part can also be ordered in a strapless version. Up-screening for high-reliability applications is also available. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website FEATURES JEDEC registered 1N6909. Oxide passivated structure. Guard ring protection for increased reverse energy capability. Epitaxial structure minimizes forward voltage drop. Hermetically sealed, low profile ceramic surface mount power package. Up-screening available in reference to MIL-PRF (see part nomenclature for all available options). RoHS compliant versions available (commercial grade only). Screening in reference to MIL-PRF available ThinKey TM 3 Package APPLICATIONS / BENEFITS Low package inductance. Very low thermal resistance. Also available with no strap as 1N6909UTK3 by special request. Mechanically rugged. MAXIMUM T C = +25 C, unless otherwise noted Parameters / Test Conditions Symbol Value Unit Junction and Storage Temperature Range T j and T stg -65 to +150 C Thermal Resistance, Junction to Case (Anode-to-Strap) R ӨJC 0.20 C/W Thermal Resistance, Junction to Case (Cathode-to-Strap, Also applicable to strapless option) R ӨJC 0.35 C/W Peak Repetitive Reverse Voltage V RRM 200 V Working Peak Reverse Voltage V RWM 200 V DC Blocking Voltage V R 200 V Average Rectified Forward Current, T C 125 C I F(ave) 150 A Derating, Forward Current, T C 125 C dl F / dt 4 A/ C Non-repetitive Peak Surge Current (tp = 8.3 ms, half sine-wave) I FSM 2000 A Peak Repetitive Reverse Surge Current (tp = 1 µs, f = 1 khz) I RRM 2 A MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 1 of 8

2 MECHANICAL and PACKAGING CASE: Ceramic-molybdenum Thinkey 3. TERMINALS: SnPb solder or RoHS compliant matte/tin (on commercial grade only) coated. MARKING: Part number and polarity symbol. POLARITY: Standard is anode to strap. Reverse is cathode to strap. WEIGHT: Approximately 1.7 grams. See Package Dimensions on last page. PART NOMENCLATURE MQ 1N6909 U TK 3 AS (e3) Reliability Level MQ (reference JAN) MX (reference JANTX) MV (reference JANTXV) Blank = Commercial JEDEC type number (See Electrical Characteristics table) Surface Mount package RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-rohs compliant Polarity AS=Anode to Strap (standard) CS=Cathode-to-Strap Blank=No Strap Package Level Package Class Symbol f I F I R T C t p V R frequency Forward current, dc Reverse current, dc Case temperature Pulse time Reverse Voltage, dc SYMBOLS & DEFINITIONS Definition T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 2 of 8

3 ELECTRICAL T A = +25 C, unless otherwise noted Parameters / Test Conditions Symbol MIN TYP MAX Unit Reverse (Leakage) Current V R = 200 V, Tc = 25 C I R µa V R = 200 V, Tc = +125 C I R ma Forward Voltage Pulse test, pulse width = 300 µs; duty cycle 2% I F = 10 A, T C = 25 C V F mv I F = 50 A, T C = 25 C V F mv I F = 100 A, T C = 25 C V F mv I F = 150 A, T C = 25 C V F mv I F = 200 A, T C = 25 C V F mv I F = 100 A, T C = -55 C V F mv I F = 150 A, T C = +125 C V F mv Junction Capacitance V R = 10 V C j pf V R = 5 V C j pf Breakdown Voltage I R = 1 ma, T C = 25 C B VR V I R = 1 ma, T C = -55 C V T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 3 of 8

4 GRAPHS IF (Amps) V F (Volts) FIGURE 1 Schottky V F I F Characteristics T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 4 of 8

5 GRAPHS (continued) IR (Amps) V R (Volts) FIGURE 2 Schottky V R vs I R T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 5 of 8

6 GRAPHS (continued) Capacitance (pf) V R (Volts) FIGURE 3 V R vs Total Capacitance (T J = 25 ºC) T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 6 of 8

7 PACKAGE DIMENSIONS Dimensions Ltr Inch Millimeters Min Max Min Max BL BT BLT C E.038 NOM.97 NOM F LC.040 NOM 1.02 NOM LF LT LW NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. SEE PAD LAYOUT ON NEXT PAGE. T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 7 of 8

8 PAD LAYOUT T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 8 of 8

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