200 VOLTS,150 AMPS LOW REVERSE LEAKAGE SCHOTTKY DIODE

Size: px
Start display at page:

Download "200 VOLTS,150 AMPS LOW REVERSE LEAKAGE SCHOTTKY DIODE"

Transcription

1 Available on commercial versions 200 VOLTS,150 AMPS LOW REVERSE LEAKAGE SCHOTTKY DIODE DESCRIPTION The 1N6909UTK3AS device polarity is anode-to-strap (standard) and is also available optionally in 1N6909UTK3CS as cathode-to-strap. This part can also be ordered in a strapless version. Up-screening for high-reliability applications is also available. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website FEATURES JEDEC registered 1N6909. Oxide passivated structure. Guard ring protection for increased reverse energy capability. Epitaxial structure minimizes forward voltage drop. Hermetically sealed, low profile ceramic surface mount power package. Up-screening available in reference to MIL-PRF (see part nomenclature for all available options). RoHS compliant versions available (commercial grade only). Screening in reference to MIL-PRF available ThinKey TM 3 Package APPLICATIONS / BENEFITS Low package inductance. Very low thermal resistance. Also available with no strap as 1N6909UTK3 by special request. Mechanically rugged. MAXIMUM T C = +25 C, unless otherwise noted Parameters / Test Conditions Symbol Value Unit Junction and Storage Temperature Range T j and T stg -65 to +150 C Thermal Resistance, Junction to Case (Anode-to-Strap) R ӨJC 0.20 C/W Thermal Resistance, Junction to Case (Cathode-to-Strap, Also applicable to strapless option) R ӨJC 0.35 C/W Peak Repetitive Reverse Voltage V RRM 200 V Working Peak Reverse Voltage V RWM 200 V DC Blocking Voltage V R 200 V Average Rectified Forward Current, T C 125 C I F(ave) 150 A Derating, Forward Current, T C 125 C dl F / dt 4 A/ C Non-repetitive Peak Surge Current (tp = 8.3 ms, half sine-wave) I FSM 2000 A Peak Repetitive Reverse Surge Current (tp = 1 µs, f = 1 khz) I RRM 2 A MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 1 of 8

2 MECHANICAL and PACKAGING CASE: Ceramic-molybdenum Thinkey 3. TERMINALS: SnPb solder or RoHS compliant matte/tin (on commercial grade only) coated. MARKING: Part number and polarity symbol. POLARITY: Standard is anode to strap. Reverse is cathode to strap. WEIGHT: Approximately 1.7 grams. See Package Dimensions on last page. PART NOMENCLATURE MQ 1N6909 U TK 3 AS (e3) Reliability Level MQ (reference JAN) MX (reference JANTX) MV (reference JANTXV) Blank = Commercial JEDEC type number (See Electrical Characteristics table) Surface Mount package RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-rohs compliant Polarity AS=Anode to Strap (standard) CS=Cathode-to-Strap Blank=No Strap Package Level Package Class Symbol f I F I R T C t p V R frequency Forward current, dc Reverse current, dc Case temperature Pulse time Reverse Voltage, dc SYMBOLS & DEFINITIONS Definition T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 2 of 8

3 ELECTRICAL T A = +25 C, unless otherwise noted Parameters / Test Conditions Symbol MIN TYP MAX Unit Reverse (Leakage) Current V R = 200 V, Tc = 25 C I R µa V R = 200 V, Tc = +125 C I R ma Forward Voltage Pulse test, pulse width = 300 µs; duty cycle 2% I F = 10 A, T C = 25 C V F mv I F = 50 A, T C = 25 C V F mv I F = 100 A, T C = 25 C V F mv I F = 150 A, T C = 25 C V F mv I F = 200 A, T C = 25 C V F mv I F = 100 A, T C = -55 C V F mv I F = 150 A, T C = +125 C V F mv Junction Capacitance V R = 10 V C j pf V R = 5 V C j pf Breakdown Voltage I R = 1 ma, T C = 25 C B VR V I R = 1 ma, T C = -55 C V T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 3 of 8

4 GRAPHS IF (Amps) V F (Volts) FIGURE 1 Schottky V F I F Characteristics T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 4 of 8

5 GRAPHS (continued) IR (Amps) V R (Volts) FIGURE 2 Schottky V R vs I R T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 5 of 8

6 GRAPHS (continued) Capacitance (pf) V R (Volts) FIGURE 3 V R vs Total Capacitance (T J = 25 ºC) T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 6 of 8

7 PACKAGE DIMENSIONS Dimensions Ltr Inch Millimeters Min Max Min Max BL BT BLT C E.038 NOM.97 NOM F LC.040 NOM 1.02 NOM LF LT LW NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. SEE PAD LAYOUT ON NEXT PAGE. T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 7 of 8

8 PAD LAYOUT T4-LDS-0253, Rev. 1 (120632) 2012 Microsemi Corporation Page 8 of 8

PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/290

PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/290 Available on commercial versions PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/290 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This family of and A switching transistors are

More information

NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349

NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 thru 2N3507AU4 Available on commercial versions NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DESCRIPTION Qualified Levels: JAN, JANTX and JANTXV This family of high-frequency, epitaxial

More information

50 Watt Zener Diodes Qualified per MIL-PRF-19500/114

50 Watt Zener Diodes Qualified per MIL-PRF-19500/114 1N24B 1N2846RB and Available on commercial versions 50 Watt Zener Diodes Qualified per MIL-PRF-19500/114 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series of high power 50W Zener diodes,

More information

P-CHANNEL J-FET. 2N5114UB thru 2N5116UB. UB Package. Also available in: TO-18 package (leaded) 2N5114 2N5116

P-CHANNEL J-FET. 2N5114UB thru 2N5116UB. UB Package. Also available in: TO-18 package (leaded) 2N5114 2N5116 thru Available on commercial versions P-CHANNEL J-FET DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous

More information

P-CHANNEL J-FET. 2N5114 thru 2N5116. TO-18 (TO-206AA) Package. Also available in: UB package (surface mount) 2N5114UB 2N5116UB

P-CHANNEL J-FET. 2N5114 thru 2N5116. TO-18 (TO-206AA) Package. Also available in: UB package (surface mount) 2N5114UB 2N5116UB thru Available on commercial versions P-CHANNEL J-FET DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other

More information

6.2 & 6.55 Volt Zener Reference Diodes

6.2 & 6.55 Volt Zener Reference Diodes 1N81-1 1N89A-1 Available on commercial versions 6. & 6.55 Volt Zener Reference Diodes Qualified per MIL-PRF-19500/9 DESCRIPTION *Qualified Levels: JAN, JANTX, JANTXV and JANS (available on some part numbers)

More information

P-CHANNEL MOSFET Qualified per MIL-PRF-19500/562

P-CHANNEL MOSFET Qualified per MIL-PRF-19500/562 Available on commercial versions P-CHANNEL MOSFET Qualified per MIL-PRF-19500/562 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTXV This 2N6804 switching transistor is military qualified up to the JANTXV

More information

CURRENT REGULATOR DIODES Qualified per MIL-PRF-19500/463

CURRENT REGULATOR DIODES Qualified per MIL-PRF-19500/463 Available on commercial versions CURRENT REGULATOR DIODES Qualified per MIL-PRF-19500/463 DESCRIPTION Qualified Levels: JAN, JANTX, JANTXV and JANS The popular 1N5283-1 thru 1N5314-1 series of 0.5 watt

More information

VOIDLESS HERMETICALLY SEALED SWITCHING DIODES Qualified per MIL-PRF-19500/578

VOIDLESS HERMETICALLY SEALED SWITCHING DIODES Qualified per MIL-PRF-19500/578 Available on commercial versions VOIDLESS HERMETICALLY SEALED SWITCHING DIODES Qualified per MIL-PRF-19500/578 DESCRIPTION These popular JEDEC registered switching/signal diodes are military qualified

More information

VOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS. Qualified to MIL-PRF-19500/420

VOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS. Qualified to MIL-PRF-19500/420 Available on commercial versions VOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS Qualified to MIL-PRF-19500/420 DESCRIPTION This standard recovery rectifier diode series is military qualified

More information

Voidless Hermetically Sealed Bidirectional Transient Voltage Suppressors Qualified to MIL-PRF-19500/516

Voidless Hermetically Sealed Bidirectional Transient Voltage Suppressors Qualified to MIL-PRF-19500/516 Available on commercial versions Voidless Hermetically Sealed Bidirectional Transient Voltage Suppressors Qualified to MIL-PRF-19500/516 DESCRIPTION This series of industry recognized voidless, hermetically

More information

1500 Watt Unidirectional and Bidirectional Transient Voltage Suppressor

1500 Watt Unidirectional and Bidirectional Transient Voltage Suppressor M.5KE6.8A M.5KE400CA(e3) Available 500 Watt Unidirectional and Bidirectional Transient Voltage Suppressor DESCRIPTION The popular Transient Voltage Suppressor series of M.5KE6.8 M.5KE400CA with its various

More information

10 Watt Zener Diodes

10 Watt Zener Diodes Available on commercial versions Watt Zener Diodes Qualified per MIL-PRF-190/12 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTXV The JEDEC registered 1N2970B through 1N015B and 1N99A through 1N998A

More information

1N5518BUR-1 thru 1N5546BUR-1

1N5518BUR-1 thru 1N5546BUR-1 Available on commercial versions Low Voltage Avalanche 500 mw Zener Diodes Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518BUR-1 thru 1N5546BUR-1 series of watt glass surface mount Zener voltage

More information

NPN Darlington Power Silicon Transistor

NPN Darlington Power Silicon Transistor Available NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/539 DESCRIPTION This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTX level. This TO-213AA

More information

QUAD N-CHANNEL MOSFET Qualified per MIL-PRF-19500/597

QUAD N-CHANNEL MOSFET Qualified per MIL-PRF-19500/597 Available on commercial versions QUAD N-CHANNEL MOSFET Qualified per MIL-PRF-19500/597 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N7334 device is military qualified up to a JANTXV level

More information

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 and Available on commercial versio N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTX These and devices are military qualified up to a JANTX level for

More information

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472 and Available on commercial versions NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTX This high speed NPN transistor is military

More information

Silicon 2.0 Watt Zener Diodes

Silicon 2.0 Watt Zener Diodes Available Silicon Watt Zener Diodes DESCRIPTION The SMB(G/J)5913B SMB(G/J)5956B series of surface mount watt Zener diodes provides a selection from 3.3 to volts with tolerance options of %, 5% and 2%.

More information

Surface Mount 3000 Watt Transient Voltage Suppressor

Surface Mount 3000 Watt Transient Voltage Suppressor MSMLG5.0A MSMLG70CAe3, MSMLJ5.0 MSMLJ70CAe3 Available Surface Mount 3000 Watt Transient Voltage Suppressor DESCRIPTION The MSMLG(J)5.0A through MXLSMLG(J)70A series of high-reliability Transient Voltage

More information

HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES Available HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES DESCRIPTION The 1N4057 through 1N4085A series of temperature compensated reference diodes provides a wide selection of nominal voltages

More information

7.5 kw, Unidirectional and Bidirectional TVS Protection Device

7.5 kw, Unidirectional and Bidirectional TVS Protection Device Available 7.5 kw, Unidirectional and Bidirectional TVS Protection Device DESCRIPTION These 7.5 kw rated transient voltage suppressors (TVS) in a surface mount PLAD package are provided with design features

More information

High Current Density Surface Mount Schottky Barrier Rectifiers

High Current Density Surface Mount Schottky Barrier Rectifiers SS0P3, SS0P4 High Current Density Surface Mount Schottky Barrier Rectifiers esmp Series TO-77A (SMPC) Anode Cathode Anode FEATURES Very low profile - typical height of. mm Ideal for automated placement

More information

100BGQ BGQ100J. 100 Amp SCHOTTKY RECTIFIER. Bulletin PD rev. B 12/02. Description/ Features. Major Ratings and Characteristics

100BGQ BGQ100J. 100 Amp SCHOTTKY RECTIFIER. Bulletin PD rev. B 12/02. Description/ Features. Major Ratings and Characteristics Bulletin PD-20999 rev. B 2/02 SCHOTTKY RECTIFIER BGQ BGQ Amp Major Ratings and Characteristics Description/ Features Characteristics Values Units This Schottky rectifier has been optimized for low reverse

More information

High Current Density Surface Mount MOS Barrier Schottky Rectifier Ultra Low

High Current Density Surface Mount MOS Barrier Schottky Rectifier Ultra Low V0P0 High Current Density Surface Mount MOS Barrier Schottky Rectifier Ultra Low V F = 0.453 V at I F = 5 A TMBS esmp Series Anode Cathode Anode FEATURES Very low profile - typical height of. mm Available

More information

High Current Density Surface Mount High Voltage Schottky Rectifier

High Current Density Surface Mount High Voltage Schottky Rectifier High Current Density Surface Mount High Voltage Schottky Rectifier SS8PH9, SS8PH0 FEATURES esmp Series Very low profile - typical height of. mm Available Ideal for automated placement Guardring for overvoltage

More information

High Performance Schottky Rectifier, 1 A

High Performance Schottky Rectifier, 1 A High Performance Schottky Rectifier, A VS-MQ-M3 Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.63 V I RM ma at 25 C T J max. 5 C Diode variation Single die

More information

Photovoltaic Solar Cell Protection Schottky Rectifier

Photovoltaic Solar Cell Protection Schottky Rectifier VSB545-M3 Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low V F =.33 V at I F = 5. A TMBS FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency

More information

Description/Features 5.59 (.220) 6.22 (.245) 6.60 (.260) 7.11 (.280).152 (.006).305 (.012) 2.00 (.079) 2.62 (.103).102 (.004) 0.76 (.030) 1.52 (.

Description/Features 5.59 (.220) 6.22 (.245) 6.60 (.260) 7.11 (.280).152 (.006).305 (.012) 2.00 (.079) 2.62 (.103).102 (.004) 0.76 (.030) 1.52 (. MBRS360TR SCHOTTKY RECTIFIER 3 Amp SMC Major Ratings and Characteristics Characteristics MBRS360TR Units I F(AV) Rectangular 3.0 A waveform V RRM 60 V I FSM @ t p = 5 µs sine 790 A V F @ 3.0 Apk, T = 25

More information

10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD-20520 rev. M 07/04. Major Ratings and Characteristics. Description/ Features

10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD-20520 rev. M 07/04. Major Ratings and Characteristics. Description/ Features 0MQ00N SCHOTTKY RECTIFIER 2. Amp I F(AV) = 2.Amp V R = 00V Major Ratings and Characteristics Characteristics 0MQ00N Units I F DC 2. A V RRM 00 V I FSM @ tp = 5 µs sine 20 A V F @.5Apk, T =25 C 0.68 V J

More information

B220/A - B260/A. Features. Mechanical Data. Ordering Information (Note 4) Marking Information 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

B220/A - B260/A. Features. Mechanical Data. Ordering Information (Note 4) Marking Information 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Green 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Mechanical Data Guard Ring Die Construction for Transient Protection Ideally Suited for Automated Assembly Low Power-Loss, High Efficiency Surge

More information

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features Bulletin PD-20622 rev. B 0/06 STPS40L5CW SCHOTTKY RECTIFIER 2 x 20 Amps I F(AV) = 40Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 40 A waveform V RRM 5

More information

30BQ040 SCHOTTKY RECTIFIER. I F(AV) = 3.0Amp V R = 40V. Bulletin PD rev. G 07/04. Description/ Features. Major Ratings and Characteristics

30BQ040 SCHOTTKY RECTIFIER. I F(AV) = 3.0Amp V R = 40V. Bulletin PD rev. G 07/04. Description/ Features. Major Ratings and Characteristics 30BQ040 SCHOTTKY RECTIFIER 3 Amp I F(AV) = 3.0Amp V R = 40V Major Ratings and Characteristics Characteristics 30BQ040 Units I F(AV) Rectangular 3.0 A waveform V RRM 40 V I FSM @ t p = 5 µs sine 2000 A

More information

High Performance Schottky Rectifier, 1.0 A

High Performance Schottky Rectifier, 1.0 A High Performance Schottky Rectifier, 1.0 A VS-BQ060-M3 Cathode Anode PRODUCT SUMMARY I F(AV) 1.0 A V R 60 V V F at I F 0.42 V I RM 8 ma at 125 C T J max. 150 C E AS 2.0 mj Package SMB Diode variation Single

More information

MBR20100AFP VRRM 100V

MBR20100AFP VRRM 100V Page No. : 1/5 20Amp. Schottky Barrier Rectifiers IF(AV) 2 A VRRM V Tj 175 C VF 0.67V Features Low VF and low IR type High junction temperature capability High current capability High surge capability

More information

Low-Voltage Trench MOS Barrier Schottky Rectifier

Low-Voltage Trench MOS Barrier Schottky Rectifier Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.26 V at I F = 5 A TMBS esmp Series 2 Top View PIN PIN 2 K K HEATSINK Bottom View FEATURES Trench MOS Schottky technology Very low profile

More information

Surface Mount Ultrafast Plastic Rectifier

Surface Mount Ultrafast Plastic Rectifier Surface Mount Ultrafast Plastic Rectifier DO-24AA (SMB) PRIMARY CHARACTERISTICS I F(AV) 2. A V RRM 3 V, 4 V I FSM 5 A t rr 35 ns V F at I F. V T J max. 5 C Package DO-24AA (SMB) Diode variations Single

More information

Ultrafast Plastic Rectifier

Ultrafast Plastic Rectifier Ultrafast Plastic Rectifier 6xT, F6xT, B6xT TO-0AC 6xT Series PIN CASE TO-63AB ITO-0AC F6xT Series PIN FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses,

More information

UF4001, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007 Ultrafast Plastic Rectifier

UF4001, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007  Ultrafast Plastic Rectifier UF400, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007 Ultrafast Plastic Rectifier FEATURES Glass passivated chip junction Ultrafast reverse recovery time Low forward voltage drop Low switching losses,

More information

Data Sheet GHXS060A120S D3

Data Sheet GHXS060A120S D3 SiC SBD Parallel Power Module V RRM =1200V I DAV = 60A @T C = 125 0 C Features SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature

More information

High Performance Schottky Rectifier, 1 A

High Performance Schottky Rectifier, 1 A High Performance Schottky Rectifier, 1 A Cathode Anode DO-214AC (SMA) PRODUCT SUMMARY Package DO-214AC (SMA) I F(AV) 1 A V R 40 V V F at I F 0.49 V I RM 26 ma at 125 C T J max. 150 C Diode variation Single

More information

High Performance Schottky Rectifier, 1.0 A

High Performance Schottky Rectifier, 1.0 A High Performance Schottky Rectifier, 1. A VS-BQ3-M3 Cathode Anode SMB PRODUCT SUMMARY Package SMB I F(AV) 1. A V R 3 V V F at I F.42 V I RM max. 15 ma at 125 C T J max. 15 C Diode variation Single die

More information

Dual Common Cathode Ultrafast Rectifier

Dual Common Cathode Ultrafast Rectifier UGEBCT, UGECCT, UGEDCT Dual Common Cathode Ultrafast Rectifier PIN PIN 3 UGExCT PIN 2 CASE PRIMARY CHARACTERISTICS 2 3 I F(AV) 2 x 5.0 A V RRM 0 V, 50 V, 200 V I FSM 55 A t rr 25 ns V F 0.895 V T J max.

More information

High Performance Schottky Rectifier, 1.5 A

High Performance Schottky Rectifier, 1.5 A High Performance Schottky Rectifier, 1.5 A Cathode Anode DO-214AC (SMA) PRODUCT SUMMARY Package DO-214AC (SMA) I F(AV) 1.5 A V R 40 V V F at I F 0.34 V I RM 20 ma at 125 C T J max. 150 C Diode variation

More information

Characteristics Values Units. Rectangular waveform 0.5 A. range - 55 to 150 C

Characteristics Values Units. Rectangular waveform 0.5 A. range - 55 to 150 C Bulletin I075 rev. C 05/06 IR0530CSPTRPbF 0.5 Amp 30 Volt Features Ultra Low V F To Footprint Area Very Low Profile (

More information

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information

PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information Green 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI 5 Product Summary I F V R V F MAX (V) I R MAX (ma) (V) (A) @ +25 C @ +25 C 1 5..71.35 Description and Applications This Schottky Barrier Rectifier

More information

General Purpose Plastic Rectifier

General Purpose Plastic Rectifier General Purpose Plastic Rectifier N400 thru N4007 DO-204AL (DO-4) FEATURES Low forward voltage drop Low leakage current High forward surge capability Solder dip 275 C max. s, per JESD 22-B6 Compliant to

More information

High Performance Schottky Rectifier, 1 A

High Performance Schottky Rectifier, 1 A High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die

More information

High Performance Schottky Rectifier, 3.0 A

High Performance Schottky Rectifier, 3.0 A High Performance Schottky Rectifier, 3. A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R 4 V V F at I F.46 V I RM 3 ma at 25 C T J max. 5 C Diode variation Single die E AS 6. mj FEATURES

More information

Surface Mount Standard Rectifiers

Surface Mount Standard Rectifiers Surface Mount Standard Rectifiers Top view esmp Series DO-29AB (SMF) PRIMARY CHARACTERISTICS I F(AV).0 A V RRM 200 V, 400 V, 600 V I FSM 25 A V F at I F =.0 A (T A = 25 C) 0.85 V I R 5 μa T J max. 75 C

More information

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Dual High Voltage Trench MOS Barrier Schottky Rectifier V300C, VI300C Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.455 V at I F = 5 A TO-220AB 2 3 V300C PIN PIN 2 PIN 3 CASE TMBS TO-262AA K 2 3 VI300C PIN PIN 2 PIN 3 K FEATURES

More information

Schottky Rectifier, 1.0 A

Schottky Rectifier, 1.0 A Schottky Rectifier, 1.0 A VS-BQ040-M3 Cathode Anode PRODUCT SUMMARY Package SMB I F(AV) 1.0 A V R 40 V V F at I F 0.38 V I RM 9 ma at 125 C T J max. 150 C Diode variation Single die E AS 3.0 mj FEATURES

More information

Schottky Rectifier, 3 A

Schottky Rectifier, 3 A Schottky Rectifier, 3 A VS-3BQPbF SMC Cathode Anode FEATURES Small foot print, surface mountable Very low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term

More information

Fast Avalanche SMD Rectifier

Fast Avalanche SMD Rectifier BYG2K-E3/HE3, BYG2M-E3/HE3 Fast Avalanche SMD Rectifier DO-24AC (SMA) PRIMARY CHARACTERISTICS I F(AV).5 A V RRM 8 V, V I FSM 3 A I R. μa V F.6 V t rr 2 ns E R 2 mj T J max. 5 C Package DO-24AC (SMA) Diode

More information

HFA35HB60 HEXFRED ULTRAFAST, SOFT RECOVERY DIODE PD-20379B. Features. Description. Absolute Maximum Ratings

HFA35HB60 HEXFRED ULTRAFAST, SOFT RECOVERY DIODE PD-20379B. Features. Description. Absolute Maximum Ratings PD-20379B HFA35HB60 HEXFRED ULTRAFAST, SOFT RECOVERY DIODE Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetically Sealed Ceramic Eyelets V R = 600V

More information

High Performance Schottky Rectifier, 1 A

High Performance Schottky Rectifier, 1 A High Performance Schottky Rectifier, A VS-MQ060NPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R 60 V V F at I F 0.63 I RM 7.5 ma at 25 C T J max. 50 C Diode variation

More information

Schottky Rectifier, 100 A

Schottky Rectifier, 100 A Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES

More information

50 WATT ZENER DIODES Qualified per MIL-PRF-19500/358. 1N3305B thru 1N3350B & RB

50 WATT ZENER DIODES Qualified per MIL-PRF-19500/358. 1N3305B thru 1N3350B & RB 1-0-446-1158 / (978) 620-2600 / Fax: (978) 689-03 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DEVICES 50 WATT ZENER DIODES Qualified per MIL-PRF-19500/358 1N3305B thru 1N3350B & RB and 1N4549B thru

More information

Distributed by: www.jameco.com -800-83-4242 The content and copyrights of the attached material are the property of its owner. Surface Mount Schottky Barrier Rectifier FEATURES Low profile package Ideal

More information

Ultrafast Avalanche SMD Rectifier

Ultrafast Avalanche SMD Rectifier BYG2D, BYG2G, BYG2J Ultrafast Avalanche SMD Rectifier DO-24AC (SMA) FEATURES Low profile package Ideal for automated placement Glass passivated pellet chip junction Low reverse current Soft recovery characteristics

More information

Schottky Rectifier, 3 A

Schottky Rectifier, 3 A VS-3BQ-M3 Schottky Rectifier, 3 A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R V V F at I F.62 V I RM 5 ma at 125 C T J max. 175 C Diode variation Single die E AS 3. mj FEATURES Low forward

More information

Ultrafast Rectifier, 2 x 8 A FRED Pt

Ultrafast Rectifier, 2 x 8 A FRED Pt Ultrafast Rectifier, 2 x 8 A FRED Pt 2 K Top View Bottom View K Anode Cathode Anode 2 FEATURES Ultrafast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature For PFC

More information

SBL10L25, SBLF10L25, SBLB10L25. Low V F Schottky Barrier Rectifier. Vishay General Semiconductor. FEATURES TYPICAL APPLICATIONS

SBL10L25, SBLF10L25, SBLB10L25. Low V F Schottky Barrier Rectifier. Vishay General Semiconductor.  FEATURES TYPICAL APPLICATIONS SBLL5, SBLFL5, SBLBL5 Low V F Schottky Barrier Rectifier FEATURES TO-0AC ITO-0AC Power pack Guardring for overvoltage protection Low power loss, high efficiency Very low forward voltage drop High forward

More information

STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD-20873 rev. A 02/07. Major Ratings and Characteristics

STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD-20873 rev. A 02/07. Major Ratings and Characteristics STPS20L5DPbF SCHOTTKY RECTIFIER 20 Amps I F(AV) = 20Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 20 A waveform V RRM 5 V I FSM @ tp = 5 μs sine 700 A

More information

TAK CHEONG. 1N4728A through 1N4763A Series. 1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators. Maximum Ratings. Specification Features

TAK CHEONG. 1N4728A through 1N4763A Series. 1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators. Maximum Ratings. Specification Features TAK CHEONG Watt DO-4 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings Rating Symbol Value Unit Maximum Steady State Power Dissipation @ T L C, Lead Length = 3/8 Derate Above C Operating

More information

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 LEVELS 2N2221A 2N2222A JAN 2N2221AL 2N2222AL JANTX 2N2221AUA 2N2222AUA JANTXV 2N2221AUB 2N2222AUB JANS 2N2221AUBC * 2N2222AUBC *

More information

PFC Device Corporation

PFC Device Corporation PFC Device Corporation CT CTF CTI CTB 30A 45V MOS Schottky Rectifier Major ratings and characteristics Characteristics Values Units I F(AV) Rectangular Waveform 15 2 A V RRM 45 V V F @ 15A, Tj=125 o C

More information

200 V I F (AV) Continuous Forward Current, T C = 80 C. 35 A I FSM Single Pulse Forward Current, T C = 25 C

200 V I F (AV) Continuous Forward Current, T C = 80 C. 35 A I FSM Single Pulse Forward Current, T C = 25 C PD-94B HFB35HB20 HEXFRED ULTRAFAST, SOFT RECOVERY DIODE Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetically Sealed Ceramic Eyelets V R = 200V I

More information

Schottky Rectifier, 8 A

Schottky Rectifier, 8 A Schottky Rectifier, 8 A Cathode Anode DO-204AR PRODUCT SUMMARY Package DO-204AR I F(AV) 8 A V R 30 V, 35 V, 40 V, 45 V V F at I F 0.44 V I RM max. 5 ma at 25 C T J max. 75 C Diode variation Single die

More information

Hyperfast Rectifier, 6 A FRED Pt

Hyperfast Rectifier, 6 A FRED Pt Hyperfast Rectifier, 6 A FRED Pt VS-6ESH2HM3 K TO-277A (SMPC) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature Specified

More information

Z-REC RECTIFIER. C3D06060A Silicon Carbide Schottky Diode. Features. Package. Benefits. Applications. Maximum Ratings = 600 V V RRM = 6 A I F(AVG)

Z-REC RECTIFIER. C3D06060A Silicon Carbide Schottky Diode. Features. Package. Benefits. Applications. Maximum Ratings = 600 V V RRM = 6 A I F(AVG) C3D66 Silicon Carbide Schottky Diode Z-REC RECTIFIER Features Package RM = 6 V I F(VG) = 6 ( < 15 C) Q c = 16 nc 6-Volt Schottky Rectifi er Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency

More information

Schottky Rectifier, 8 A

Schottky Rectifier, 8 A Schottky Rectifier, 8 A 8TQ00GPbF TO-220AC PRODUCT SUMMARY I F(AV) V R Base cathode 2 3 Cathode Anode 8 A 00 V FEATURES 75 C operation Low forward voltage drop High frequency operation High purity, high

More information

High Performance Schottky Rectifier, 240 A

High Performance Schottky Rectifier, 240 A High Performance Schottky Rectifier, 240 A HALF-PAK (D-67) PRODUCT SUMMARY I F(AV) V R Package Circuit Lug terminal anode Base cathode 240 A 45 V HALF-PAK (D-67) Single diode FEATURES 150 C T J operation

More information

Schottky Rectifier, 9 A

Schottky Rectifier, 9 A Schottky Rectifier, 9 A VS-95SQ05, VS-95SQ05-M3 Cathode Anode DO-204AR PRODUCT SUMMARY Package DO-204AR I F(AV) 9 A V R 5 V V F at I F 0.25 V I RM max. 348 ma at 00 C T J max. 00 C Diode variation Single

More information

C3D06065A Silicon Carbide Schottky Diode Z-Rec Rectifier

C3D06065A Silicon Carbide Schottky Diode Z-Rec Rectifier C3D665 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 65 V ( =135 C) = 9 Q c = 15 nc Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency

More information

CYStech Electronics Corp.

CYStech Electronics Corp. Page No. : 1/7 1A Snubber Damping Rectifier Features High current capability Smoothly soft reverse recovery time (trr) Low profile surface mounted package in order to minimize board space Pb-free lead

More information

Schottky Rectifier, 3.0 A

Schottky Rectifier, 3.0 A VS-30BQ060-M3 Schottky Rectifier, 3.0 A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3.0 A V R 60 V V F at I F 0.52 V I RM 20 ma at 125 C T J max. 150 C Diode variation Single die E AS 5.0 mj

More information

Data Sheet GHIS080A120S A1

Data Sheet GHIS080A120S A1 Boost Chopper with Field Stop Trench IGBT + SiC SBD V CES =1200V I C = 80A @T C = 100 0 C E K G C Features Field StopTrench Fast IGBT Low voltage drop Low tail current Switching frequency up to 50 khz

More information

Diode, Schottky SMB/DO-214AA. Page <1> 24/04/08 V1.1. Dimensions Inches (Millimeters)

Diode, Schottky SMB/DO-214AA. Page <1> 24/04/08 V1.1. Dimensions Inches (Millimeters) Features: For surface mounted application. Metal to silicon rectifier, majority carrier conduction. Low forward voltage drop. Easy pick and place. High surge current capability. Plastic material. Epitaxial

More information

Schottky High Performance Rectifier Gen 3, D-61 Package, 2 x 40 A

Schottky High Performance Rectifier Gen 3, D-61 Package, 2 x 40 A Schottky High Performance Rectifier Gen 3, D-6 Package, 2 x 4 A VS-82CNQ3APbF Series VS-82CNQ3APbF D-6-8 VS-82CNQ3ASMPbF D-6-8-SM VS-82CNQ3ASLPbF D-6-8-SL PRODUCT SUMMARY Package D-6 I F(AV) 2 x 4 A V

More information

Ultra Fast NPT - IGBT

Ultra Fast NPT - IGBT APT7GR12JD 12V, 7A, V ce(on) = 2.V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers

More information

Ultrafast Rectifier, 2 A FRED Pt

Ultrafast Rectifier, 2 A FRED Pt Ultrafast Rectifier, 2 A FRED Pt DO-29AB (SMF) Cathode Anode FEATURES Ultrafast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature For PCF CRM, snubber operation

More information

Schottky Rectifier, 1.0 A

Schottky Rectifier, 1.0 A Schottky Rectifier, 1.0 A VS-BQ060PbF Vishay High Power Products FEATURES Small foot print, surface mountable Low forward voltage drop SMB Cathode Anode High frequency operation Guard ring for enhanced

More information

HFB60HNX20. Ultrafast, Soft Recovery Diode FRED PD-97803A. Features. Description. 1 V R = 200V I F(AV) = 60A. t rr = 50ns CASE STYLE

HFB60HNX20. Ultrafast, Soft Recovery Diode FRED PD-97803A. Features. Description.  1 V R = 200V I F(AV) = 60A. t rr = 50ns CASE STYLE PD-97803A FRED Features Reduced RFI and EMI Reduced RFI and EMI Extensive Characterization of Recovery Parameters Hermetic Surface Mount ESD Rating: Class 3B per MIL-STD-750, Method 20 Ultrafast, Soft

More information

8ETH06 8ETH06S 8ETH06-1 8ETH06FP

8ETH06 8ETH06S 8ETH06-1 8ETH06FP 8ETH06 8ETH06S 8ETH06-8ETH06FP Hyperfast Rectifier Features Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature 500V insulation voltage UL E78996 approved

More information

High Voltage Ultrafast Rectifier

High Voltage Ultrafast Rectifier UGxT, UGFxT, UGBxT High Voltage Ultrafast Rectifier FEATURES TO-AC ITO-AC Power pack Glass passivated pellet chip junction Ultrafast recovery time Soft recovery characteristics Low switching losses, high

More information

UF4001, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007 Ultrafast Plastic Rectifier

UF4001, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007  Ultrafast Plastic Rectifier UF400, UF4002, UF4003, UF4004, UF4005, UF4006, UF4007 Ultrafast Plastic Rectifier FEATURES Glass passivated chip junction Ultrafast reverse recovery time Low forward voltage drop Low switching losses,

More information

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 5 to 1 CURRENT 2. Amperes RS21L THRU RS27L FEATURES * Ideal for printed circuit board * Surge overload rating: 6 amperes peak * Weight:

More information

Surface Mount Schottky Barrier

Surface Mount Schottky Barrier FEATURES - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level, per J-STD-020 - Compliant to RoHS Directive

More information

30BQ100PbF SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3.0Amp V R = 100V. Bulletin PD-20409 rev. C 01/07. Major Ratings and Characteristics

30BQ100PbF SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3.0Amp V R = 100V. Bulletin PD-20409 rev. C 01/07. Major Ratings and Characteristics 30BQ00PbF SCHOTTKY RECTIFIER 3 Amp I F(AV) = 3.0Amp V R = 00V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 3.0 A waveform V RRM 00 V I FSM @ t p = 5 μs sine 800 A

More information

STPS6045C. Power Schottky Rectifier. Description. Features

STPS6045C. Power Schottky Rectifier. Description. Features Power Schottky Rectifier Description Datasheet - production data Dual center tap Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters. Packaged in TO-247, this

More information

STPS120M. Power Schottky rectifier. Description. Features

STPS120M. Power Schottky rectifier. Description. Features Power Schottky rectifier Description Datasheet - production data Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in STmite, this device

More information

General Purpose Plastic Rectifier

General Purpose Plastic Rectifier General Purpose Plastic Rectifier N400 thru N4007 DO-204AL (DO-4) FEATURES Low forward voltage drop Low leakage current High forward surge capability Solder dip 275 C max. s, per JESD 22-B6 Compliant to

More information

High Voltage Ultrafast Rectifier

High Voltage Ultrafast Rectifier High Voltage Ultrafast Rectifier TO-AC ITO-AC FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Soft recovery characteristics Low switching losses, high efficiency PIN PIN

More information

Schottky Rectifier, 1 A

Schottky Rectifier, 1 A Schottky Rectifier, 1 A BQPbF FEATURES SMB Cathode Anode Small foot print, surface mountable Low forward voltage drop High frequency operation Available RoHS* COMPLIANT Guard ring for enhanced ruggedness

More information

MBRS540T3G NRVBS540T3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 5.0 AMPERES, 40 VOLTS

MBRS540T3G NRVBS540T3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIER 5.0 AMPERES, 40 VOLTS MBRSTG, NRVBSTG Surface Mount Schottky Power Rectifier The MBRST employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction

More information

PARAMETER SYMBOL B1S B2S B4S B6S B8S B10S UNITS I F(AV) I FSM =25 O C =125 O C I R. (Note 2) ,T STG

PARAMETER SYMBOL B1S B2S B4S B6S B8S B10S UNITS I F(AV) I FSM =25 O C =125 O C I R. (Note 2) ,T STG MINI SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 0 to 00Volts CURRENT 0.8 Amperes Recongnized File # E111753 FEATURES Plastic material used carries Underwriters Laboratory recognition

More information

High Performance Schottky Generation 5.0, 2 x 3 A

High Performance Schottky Generation 5.0, 2 x 3 A High Performance Schottky Generation 5.0, 2 x 3 A I-PAK (TO-25AA) Base common cathode 3 Anode 2 Anode Common cathode VS-6CUT04 PRODUCT SUMMARY 4 D-PAK (TO-252AA) Anode Base common cathode 2 Common cathode

More information

Small Signal Switching Diodes, High Voltage

Small Signal Switching Diodes, High Voltage BAV9W-G, BAV2W-G, BAV2W-G Small Signal Switching Diodes, High Voltage MECHANICAL DATA Case: SOD-23 Weight: approx. 9.4 mg Packaging codes/options: 8/K per 3" reel (8 mm tape), K/box 8/3K per 7" reel (8

More information