200 V I F (AV) Continuous Forward Current, T C = 80 C. 35 A I FSM Single Pulse Forward Current, T C = 25 C

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1 PD-94B HFB35HB20 HEXFRED ULTRAFAST, SOFT RECOVERY DIODE Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetically Sealed Ceramic Eyelets V R = 200V I F(AV) = 35A t rr = 35ns Description These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Absolute Maximum Ratings Characteristics Characteristics Max. Units V R Cathode to Anode Voltage 200 V I F (AV) Continuous Forward Current, T C = 80 C 35 A I FSM Single Pulse Forward Current, T C 50 A P T C Maximum Power Dissipation 25 W, T STG Operating Junction and Storage Temperature Range -55 to 50 C Notes: D.C. = 50% rectangle wave /2 sine wave, 60Hz, Pulse Width = 8.33ms CASE STYLE PIN ASSIGNMENTS TO-254AA

2 HFB35HB20 Electrical (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V BR Cathode Anode Breakdown Voltage 200 V I R = µa V FM Max Forward Voltage See Fig..25 I F = 20A, = -55 C.5 I F = 20A,.4,.92 V,.0 I F = 20A, I RM Max Reverse Leakage Current µa V R V R Rated See Fig. 2.0 ma V R V R Rated, C unction Capacitance, See Fig pf V R 200V L S Series Inductance 7.8 nh Measured from anode lead to Cathode lead, 6mm (0.25 in) from package Dynamic Recovery (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions t rr Reverse Recovery Time 35 ns I F =.0A, V R = 30V, di f /dt = 200A/µs t rr Reverse Recovery Time 45 ns t rr2 See Fig I RRM Peak Recovery Current 3.3 A I RRM2 See Fig Q rr Reverse Recovery Charge 76 nc Q rr2 See Fig di (rec)m /dt Peak Rate of Fall of Recovery Current 236 A/µs di (rec)m /dt During tb - See Fig V R = 60V di f /dt = 200A/µs Thermal - Mechanical Characteristics Parameter Typ. Max. Units R JC Junction-to-Case, See Fig. 4.0 C/W Wt Weight 9.3 g

3 Instantaneous Forward Current - I F (A) Junction Capacitance - C T (pf) Reverse Current - I R (µa) HFB35HB20 25 C C 75 C C Reverse Voltage - V R (V) Tj Fig. 2 Typical Values of Reverse Current Vs. Reverse Voltage 00 Tj Tj = -55 C Forward Voltage Drop - V F (V) 0 Fig. Max. Forward Voltage Drop Characteristics Reverse Voltage - V R (V) Fig. 3 Typical Junction Capacitance Vs. Reverse Voltage Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty f actor D = t / t 2 2. Peak =P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. 4 Max. Thermal Impedance ZthJC Characteristics

4 Q rr - ( nc ) / dt - ( A / µs ) t rr - ( ns ) I RRM - ( A ) HFB35HB20 90 V R = 60V V R = 60V Fig. 5 Typical Reverse Recovery Vs di f /dt Fig. 6 Typical Recovery Current Vs di f /dt 0 00 V R = 60V di ( rec )M 0 V R = 60V 0 0 Fig. 7 Typical Stored Charge Vs di f /dt Fig. 8 Typical di (rec)m /dt Vs di f /dt 3 0 I F t a trr t b 4 Q rr V R = 200V 2 I RRM 0.5 I RRM di(rec)m/dt 5 dif/dt ADJUST L = 70µH G 0.0 D.U.T. D IRFP250 S di /dt f 0.75 I RRM di f /dt - Rate of change of current through zero crossing. I RRM - Peak reverse recovery current. t rr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75I RRM and 0.5I RRM extrapolated to zero current. Q rr - Area under curve defined by t rr and I RRM - Q rr = (t rr X I RRM ) / 2 di (rec)m /dt - Peak rate of change of current during t b position of t rr. Fig. 9 Typical Reverse Recovery Parameter Test Circuit Fig. Reverse Recovery Waveform and Definitions

5 HFB35HB20 Case Outline and Dimensions TO-254AA 3.78 [.49] 3.53 [.39] A 3.84 [.545] 3.59 [.535] 6.60 [.260] 6.32 [.249] 0.2 [.005].27 [.050].02 [.040] 7.40 [.685] 6.89 [.665] [.800] [.790] 3.84 [.545] 3.59 [.535] B 2 3 C 4.48 [.570] 2.95 [.5] 0.84 [.033] MAX. 3.8 [.50] 2X 3X.4 [.045] 0.89 [.035] 0.36 [.04] B A 3.8 [.50] NOTES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: INCH. 4. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS Refer = DRAIN to page. 2 = SOURCE 3 = GATE IR HiRel Headquarters: N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (3) IR HiRel Leominster: 205 Crawford St., Leominster, Massachusetts 0453, USA Tel: (978) IR HiRel San Jose: 2520 Junction Avenue, San Jose, California 9534, USA Tel: (408) Data and specifications subject to change without notice

6 HFB35HB20 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s product and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer s technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to ( WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office