FGA25N120ANTD 1200V NPT Trench IGBT

Transcription

1 FGA25N2ANTD 2V NPT Trench IGBT Features NPT Trench Technology, Positive temperature coefficient Low saturation voltage: V CE(sat), typ = = 25A and Low switching loss: E off, typ = 25A and Extremely enhanced avalanche capability Description August 25 Using Fairchild's proprietary trench design and advanced NPT technology, the 2V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. C FGA25N2ANTD 2V NPT Trench IGBT G G C E TO-3P E Absolute Maximum Ratings Symbol Description FGA25N2ANTD Units V CES Collector-Emitter Voltage 2 V S Gate-Emitter Voltage ± 2 V Collector 5 A Collector = C 25 A M Pulsed Collector Current (Note ) 75 A I F Diode Continuous Forward = C 25 A I FM Diode Maximum Forward Current 5 A P D Maximum Power 32 W Maximum Power = C 25 W T J Operating Junction Temperature -55 to +5 C T stg Storage Temperature Range -55 to +5 C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 C Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc Thermal Resistance, Junction-to-Case for IGBT --.4 C/W R θjc Thermal Resistance, Junction-to-Case for Diode C/W R θja Thermal Resistance, Junction-to-Ambient -- 4 C/W 25 Fairchild Semiconductor Corporation FGA25N2ANTD Rev. B

2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGA25N2ANTD FGA25N2ANTD TO-3P Electrical Characteristics of the IGBT unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics ES Collector Cut-Off Current V CE = V CES, = V ma I GES G-E Leakage Current = S, V CE = V ± 25 na On Characteristics (th) G-E Threshold Voltage = 25mA, V CE = V V CE(sat) Collector to Emitter = 25A, = 5V V Saturation Voltage = 25A, = 5V, V = 5A, = 5V V FGA25N2ANTD 2V NPT Trench IGBT Dynamic Characteristics C ies Input Capacitance V CE = 3V, = V, pf C oes Output Capacitance f = MHz pf C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time V CC = 6 V, = 25A, ns t r Rise Time R G = Ω, = 5V, Inductive Load, ns t d(off) Turn-Off Delay Time ns t f Fall Time -- 8 ns E on Turn-On Switching Loss mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj t d(on) Turn-On Delay Time V CC = 6 V, = 25A, ns t r Rise Time R G = Ω, = 5V, Inductive Load, ns t d(off) Turn-Off Delay Time ns t f Fall Time ns E on Turn-On Switching Loss mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj Q g Total Gate Charge V CE = 6 V, = 25A, nc Q ge Gate-Emitter Charge = 5V nc Q gc Gate-Collector Charge -- 5 nc Notes: () Repetitive rating: Pulse width limited by max. junction temperature FGA25N2ANTD Rev. B 2

3 Electrical Characteristics of DIODE unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units V FM Diode Forward Voltage I F = 25A V t rr Diode Reverse Recovery Time I F = 25A ns di/dt = 2 A/µs I rr Diode Peak Reverse Recovery Current A Q rr Diode Reverse Recovery Charge nc FGA25N2ANTD 2V NPT Trench IGBT FGA25N2ANTD Rev. B 3

4 Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, 8 T 2V C 5V 2V 6 7V V 4 2 9V 8 6 8V 4 7V 2 = 6V Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 2. Typical Saturation Voltage Characteristics Collector Current, = 5V Figure 4. Saturation Voltage vs. FGA25N2ANTD 2V NPT Trench IGBT 3. = 5V 2 = -4 C A = 25A = 2.5A 4A 25A Case Temperature, [ C] Gate-Emitter Voltage, Figure 5. Saturation Voltage vs. Figure 6. Saturation Voltage vs = 2.5A 4A 25A = 2.5A 4A 25A Gate-Emitter Voltage, Gate-Emitter Voltage, FGA25N2ANTD Rev. B 4

5 Typical Performance Characteristics (Continued) Figure 7. Capacitance Characteristics Capacitance [pf] Ciss Coss Crss = V, f = MHz Figure 9. Turn-Off Characteristics vs. Gate Resistance Figure 8. Turn-On Characteristics vs. Gate Resistance Switching Time [ns] tr td(on) V CC = 6V, = ±5V = 25A Gate Resistance, R G [Ω] Figure. Switching Loss vs. Gate Resistance FGA25N2ANTD 2V NPT Trench IGBT Switching Time [ns] V CC = 6V, = ±5V = 25A td(off) tf Switching Loss [mj] V CC = 6V, = ±5V = 25A Eon Eoff Gate Resistance, R G [Ω] Gate Resistance, R G [Ω] Figure. Turn-On Characteristics vs. Collector Current Figure 2. Turn-Off Characteristics vs. Collector Current = ±5V, R G = Ω Switching Time [ns] tr td(on) Switching Time [ns] = ±5V, R G = Ω td(off) tf Collector Current, Collector Current, FGA25N2ANTD Rev. B 5

6 ]hjc[ztseponresmalher..e-e-5e-4e-3..rectangularpuseduration[sectypical Performance Characteristics (Continued) Figure 3. Switching Loss vs. Collector Current Switching Loss [mj] = ±5V, R G = Ω Collector Current, Figure 5. SOA Characteristics Eon Eoff Figure 4. Gate Charge Characteristics Gate-Emitter Voltage, R L = 24Ω Figure 6. Turn-Off SOA Vcc = 2V Gate Charge, Q g [nc] 4V 6V FGA25N2ANTD 2V NPT Trench IGBT Collector Current, Ic. Ic MAX (Pulsed) Ic MAX (Continuous) Single Nonrepetitive Pulse DC Operation ms µs 5µs Curves must be derated linearly with increase in temperature.. Collector Current, Safe Operating Area = 5V, Figure 7. Transient Thermal Impedance of IGBT Collector - Emitter Voltage, V CE single pulsetlpdm t t2 Duty factor D = t / t2 Peak Tj = Pdm Zthjc + ]FGA25N2ANTD Rev. B 6

7 Typical Performance Characteristics (Continued) Figure 8. Forward Characteristics Figure 9. Reverse Recovery Current Forward Current, I F 5 T J T J Forward Voltage, V F 3 25 di/dt = 2A/µs 2 5 di/dt = A/µs Forward Current, I F Figure 2. Stored Charge Figure 2. Reverse Recovery Time Reverse Recovery Currnet, I rr FGA25N2ANTD 2V NPT Trench IGBT 4 3 Stored Recovery Charge, Q rr [nc] 3 2 di/dt = 2A/µs di/dt = A/µs Reverse Recovery Time, t rr [ns] 2 di/dt = A/µs di/dt = 2A/µs Forward Current, I F Forward Current, I F FGA25N2ANTD Rev. B 7

8 Mechanical Dimensions 5.6 ± ±.2 ø3.2 ±. 9.6 ± ±.2 TO-3P 2.76 ± ± ± ± ± ± FGA25N2ANTD 2V NPT Trench IGBT 2. ±.2 3. ±.2. ± ± ±.3.4 ± TYP [5.45 ±.3] 5.45TYP [5.45 ±.3] Dimensions in Millimeters FGA25N2ANTD Rev. B 8

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