STV270N4F3. N-channel 40 V, 1.25 mω, 270 A, PowerSO-10 STripFET III Power MOSFET. Features. Applications. Description
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1 Nchannel 40 V, 1.25 mω, 270, PowerSO STripFET III Power MOSFET Features Type V DSS R DS(on) max I D (1) STV270N4F3 40 V < 1.5 mω Current limited by package Conduction losses reduced Low profile, very low parasitic inductance 1 PowerSO pplications Switching application Description This STripFET III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize onstate resistance providing superior switching performances. Figure 1. Internal schematic diagram and connection diagram (top view) Table 1. Device summary Order code Marking Package Packaging STV270N4F3 270N4F3 PowerSO Tape and reel June 2009 Doc ID Rev 6 1/
2 Contents STV270N4F3 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics Test circuits Package mechanical data Revision history /12 Doc ID Rev 6
3 Electrical ratings 1 Electrical ratings Table 2. bsolute maximum ratings Symbol Parameter Value Unit V DS Drainsource voltage (v GS = 0) 40 V V GS Gatesource voltage ± 20 V (1) I D Drain current (continuous) at T C = 25 C 270 I D Drain current (continuous) at T C = 0 C 220 (1) I DM Drain current (pulsed) 80 (2) P TOT Total dissipation at T C = 25 C 300 W Derating factor 2 W/ C E (3) S Single pulse avalanche energy 00 mj T stg Storage temperature T j Operating junction temperature 55 to 175 C 1. Current limited by package 2. This value is rated according to Rthjc 3. Starting T j = 25 C, I D = 80, V DD = 32 V Table 3. Thermal data Symbol Parameter Value Unit R thjcase Thermal resistance junctioncase max 0.5 C/W R (1) thjpcb Thermal resistance junctionpcb max 35 C/W 1. When mounted on 1 inch2 FR4 2 oz Cu. Doc ID Rev 6 3/12
4 Electrical characteristics STV270N4F3 2 Electrical characteristics (Tcase = 25 C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drainsource breakdown voltage Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) I D = 250 µ, V GS = 0 40 V V DS = Max rating, V DS = Max rating, T c =125 C 0 µ µ V DS = ± 20 V ±200 n V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µ 2 4 V Static drainsource on R DS(on) V resistance GS = V, I D = mω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) fs C iss C oss C rss Q g Q gs Q gd Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gatesource charge Gatedrain charge V DS = V, I D = S V DS = 25 V, f = 1 MHz, V GS =0 V DD = 20 V, I D = 160, V GS = V Figure pf pf pf 150 nc nc nc 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r Turnon delay time Rise time V DD = 20 V, I D = 80 R G = 4.7 Ω, V GS = V Figure ns ns t d(off) t f Turnoff delay time Fall time V DD = 20 V, I D = 80 R G = 4.7 Ω, V GS = V, Figure ns ns 4/12 Doc ID Rev 6
5 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SD (1) V SD (2) t rr Q rr I RRM Sourcedrain current Sourcedrain current (pulsed) Forward on voltage I SD = 80, V GS = V Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 160,di/dt = 0 /µs V DD = 32 V, T j = 150 C Figure ns nc 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID Rev 6 5/12
6 Electrical characteristics STV270N4F3 2.1 Electrical characteristics Figure 2. Safe operating area Figure 3. Thermal impedance ID () Operation in this area is limited by Max Rds(on) Tj=175 C Tc=25 C Single pulse M01500v1 0µs 1ms ms VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics ID() VGS=V 5V M01502v1 ID() VDS=5V TC=25 C M01503v V VDS(V) VGS(V) Figure 6. Static drainsource on resistance Figure 7. Normalized B VDSS vs temperature RDS(on) (mω) 1.40 VGS V TC=25 C M01501v ID() 6/12 Doc ID Rev 6
7 Electrical characteristics Figure 8. Gate charge vs gatesource voltage Figure 9. Capacitance variations Figure. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Sourcedrain diode forward characteristics VSD (V) TJ=50 C TJ=25 C TJ=175 C M04229v ISD() Doc ID Rev 6 7/12
8 Test circuits STV270N4F3 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD VGS VD RG RL D.U.T µf 3.3 µf VDD Vi=20V=VGMX 2200 µf 12V IG=CONST 2.7kΩ 47kΩ 0Ω 0nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ M01468v1 M01469v1 Figure 15. Test circuit for inductive load Figure 16. switching and diode recovery times Unclamped inductive load test circuit 25 Ω G D D.U.T. S B FST DIODE B B D L=0µH µf µf VDD VD ID L 2200 µf 3.3 µf VDD G RG S Vi D.U.T. M01470v1 Pw M01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% % VDS % 90% VDD VDD VGS 90% M01472v1 0 % M01473v1 8/12 Doc ID Rev 6
9 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: ECOPCK is an ST trademark. Doc ID Rev 6 9/12
10 Package mechanical data STV270N4F3 PowerSO MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX B C D D e E E E E E F h H L q α 0 o 8 o B 6 0. B H E E2 E3 E1 E4 1 5 SETING PLNE e B DETIL "" 0.25 M D Q C h = D1= SETING PLNE F 1 1 DETIL "" L α C /12 Doc ID Rev 6
11 Revision history 5 Revision history Table 8. Document revision history Date Revision Changes 25Oct Initial release 03pr I D value has been updated. 01Oct Document status promoted from preliminary data to datasheet 09Mar R thjpcb value has been changed in Table 3: Thermal data. 05May Changed: Description and Figure 12: Sourcedrain diode forward characteristics 17Jun Corrected typing error on cover page Doc ID Rev 6 11/12
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