CJMNT31 PNP Power Transistor with N-MOSFET
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1 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2 2-6L-I Power Management Transistors-MOSFET CJMNT31 PNP Power Transistor with N-MOSFET V (BR)DSS /VR R DS(on) MAX / 36mΩ@4.5V 2V 41mΩ@2.5V 48mΩ@1.8V.69A 1.3Ω@1.5V -3V / - 2A DFNWB2 2-6L-I FEATURES Ultra low collector-to-emitter saturation voltage High DC current gain Small package DFNWB2x2-6L-I MARKING: 31 APPLICATIONS Charging circuit Other power management in portable equipments Equivalent circuit MAXIMUM RATINGS ( unless otherwise noted) Symbol Parameter Value Unit PNP Transistor V CBO Collector-Base Voltage -3 V V CEO Collector-Emitter Voltage -3 V V EBO Emitter-Base Voltage -6 V M Drain Current - Pulse(Note3) 1.4 A Power Dissipation, Temperature and Thermal Resistance P D Collector Current-Continuous(Note1) -3 A Collector Current-Continuous(Note2) -2 A M Collector Current-Pulse(Note3) -6 A N-MOSFET V DS Drain-Source Voltage 2 V Gate-Source Voltage ±6 V Drain Current -Continuous(Note1).8 A Drain Current -Continuous(Note2).69 A Power Dissipation.7 W PC Power Dissipation (Tc=25,Note1) 2.5 W R θja Thermal Resistance from Junction to Ambient 179 /W T j Junction Temperature 15 T stg Storage Temperature -55~+15 T L Lead Temperature E,Sep,214 S,Apr,214
2 ELECTRICAL CHARACTERISTICS =25 unless otherwise specified PNP Transistor Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO =-1mA,I E = -3 V Collector-emitter breakdown V (BR)CEO =-1mA,I B = -3 V Emitter-base breakdown voltage V (BR)EBO I E =-1μA, = -6 V Collector cut-off current BO V CB =-3V,I E = -.1 μa Emitter cut-off current I EBO V EB =-5V, = -.1 μa DC current gain h FE V CE =-2V, =-1A 1 3 Collector-emitter saturation voltage V CE(sat) =-2A,I B =-ma V Base-emitter saturation voltage V BE(sat) =-2A,I B =-ma V Base-emitter voltage V BE(on) V CE =-2V, =-ma V N-MOSFET STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =V, ID=25µA 2 V Zero gate voltage drain current IDSS VDS =2V,VGS = V 1 µa Gate-body leakage current IGSS VGS =±5V, VDS = V ±5 µa Gate threshold voltage VGS(th) VDS =, ID =25µA.45 1 V Drain-source on-resistance RDS(on) VGS =4.5V, ID =.55A 36 mω VGS =2.5V, ID =.45A 41 mω VGS =1.8V, ID =.35A 48 mω VGS =1.5V, ID =.1A 1.3 Ω Diode forward voltage V SD I S =.35A, VGS = V.5 1 V DYNAMIC PARAMETERS (note 4) Input Capacitance C iss 5 pf Reverse Transfer Capacitance C rss 8 pf Output Capacitance C oss VDS =1V,VGS =V,f =1MHz 13 pf SWITCHING PARAMETERS (note 4) Turn-on delay time t d(on) 22 ns Turn-on rise time t r =4.5V,V DS =1V, 8 ns Turn-off delay time t d(off) R L =1Ω,R GEN =6Ω, ID=.5A 7 ns Turn-off fall time 65 ns t f Total Gate Charge Q g 1.15 nc VDS =1V,VGS =4.5V, Gate-Source Charge Q gs.15 nc ID =.6A Gate-Drain Charge.23 nc Note: 1 Surface mounted on FR-4 board using 1 square inch pad size, 1oz copper 2 Surface mounted on FR-4 board using minimum pad size, 1oz copper Q gd 3 Pulse test: pulse width =3μs, duty cycle 2% 4 These parameters have no way to verify. 2 E,Sep,214
3 PNP Transistor Typical Characteristics PNP Transistor COLLECTOR CURRENT COMMON EMITTER Static Characteristic -5mA -4.5mA -4mA -3.5mA -3mA -2.5mA -2mA -1.5mA -1mA I B =-.5mA COLLECTOR-EMITTER VOLTAGE V CE DC CURRENT GAIN h FE COMMON EMITTER V CE = 2V h FE = COLLECTOR CURRENT V BEsat -1 V CEsat BASE-EMITTER SATURATION VOLTAGE V BEsat =1 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mv) -1-1 =1 β= COLLECTOR CURREMT COLLECTOR CURREMT β=1-3 COLLECTOR POWER DISSIPATION P C (mw) P C CAPACITANCE C (pf) 1 1 C ob /C ib C ib C ob V CB /V EB f=1mhz I E =/ = = AMBIENT TEMPERATURE ( ) REVERSE VOLTAGE V E,Sep,214
4 N-MOSFET Typical Characteristics N-channel Characteristics 5 4 Output Characteristics =5.5V =4.5V V DS =16V Transfer Characteristics DRAIN CURRENT (A) 3 2 =3.5V =2.5V DRAIN CURRENT 3 =1 1 1 =1.5V DRAIN TO SOURCE VOLTAGE V DS GATE TO SOURCE VOLTAGE 6 R DS(ON) 44 R DS(ON) ON-RESISTANCE R DS(ON) (mω) 3 =1.8V =2.5V =4.5V ON-RESISTANCE R DS(ON) (mω) =6mA = DRAIN CURRENT GATE TO SOURCE VOLTAGE I S V SD 1. Threshold Voltage.95 SOURCE CURRENT I S =1 THRESHOLD VOLTAGE V TH =25uA SOURCE TO DRAIN VOLTAGE V SD JUNCTION TEMPERATURE T J ( ) 4 E,Sep,214
5 DFNWB2 2-6L-I Package Outline Dimensions N1 TOP VIEW BOTTOM VIEW SIDE VIEW 5 E,Sep,214
6 DFNWB2 2-6L-I Tape and Reel 6 E,Sep,214
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OptiMOS Power-Transistor Product Summary V DS 55 V R DS(on),max 4) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175 C
IRF830. N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET
IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF830 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
N-Channel 100 V (D-S) MOSFET
Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested
BC807; BC807W; BC327
Rev. 06 7 November 009 Product data sheet. Product profile. General description PNP general-purpose transistors. Table. Product overview Type number Package NPN complement NXP JEIT BC807 SOT - BC87 BC807W
N-Channel 60-V (D-S) MOSFET
7/7, VQJ/P, BS7 -Channel 6-V (D-S) MOSFET Part umber V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) 7 5 @ V GS = V.8 to. 7 7.5 @ V GS = V to.5.5 VQJ 6 5.5 @ V GS = V.8 to.5.5 VQP 5.5 @ V GS =
IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
T A = 25 C (Notes 3 & 5) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC4040SSD-13 C4040SD 13 12 2,500
Product Line of 4 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max I D max () T = 25 C (Notes 3 & 5) 25mΩ @ = 1 7.5 Q1 4 4mΩ @ = 4.5 6.2 Features and Benefits Matched
FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features
FDD443 4V P-Channel PowerTrench MOSFET -4V, -4A, 44mΩ Features Max r DS(on) = 44mΩ at V GS = -V, I D = -6.7A Max r DS(on) = 64mΩ at V GS = -4.5V, I D = -5.5A High performance trench technology for extremely
PHOTOTRANSISTOR OPTOCOUPLERS
MCT2 MCT2E MCT20 MCT27 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor
IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET
N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY
OptiMOS 3 Power-Transistor
Type IPD6N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS
PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291
DEVICES PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC
N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted
October 5 BSS38 BSS38 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary,
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR
PD 967 IRFB465PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S V DSS HEXFET
2PD601ARL; 2PD601ASL
Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.
Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C
2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High
30 V, single N-channel Trench MOSFET
SOT883B Rev. 1 11 May 212 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN16B-3 (SOT883B) Surface-Mounted
BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
65 V, 00 ma NPN general-purpose transistors Rev. 07 7 November 009 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V < 1.2 Ω 3.8 A TYPICAL R DS(on) =1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT
FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY SOT 89. V CEO=120V; V CE(sat)= 1V; I C= 1A
120V NPN SILION HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY V EO=120V; V E(sat)= 1V; I = 1A DESRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low V E
2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS
2N6388 is a Preferred Device Plastic MediumPower Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500
Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive
BUZ11 N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 30 A TYPICAL R DS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT
200V, N-CHANNEL. Absolute Maximum Ratings. Features: www.irf.com 1 PD - 90370
PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF240 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFET technology
MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications
MJD (NPN), MJD7 (PNP) Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)
V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 973B IRFB432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low
Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
BUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information
Data Sheet June 1999 File Number 2253.2 [ /Title (BUZ1 1) /Subject (3A, 5V,.4 Ohm, N- Channel Power MOS- FET) /Autho r () /Keywords (Intersil Corporation, N- Channel Power MOS- FET, TO- 22AB ) /Creator
Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
Automotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (D-S) 75 C MOSFET SQ36AEES PRODUCT SUMMARY V DS (V) -6 R DS(on) () at V GS = - V 7 R DS(on) () at V GS = -4.5 V.3 I D (A) -.9 Configuration Single D 3 SOT-3 (TO-36) G Top View
IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A
HEXFET Power MOSFET PD - 9.232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive