BUF420AW HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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1 BUF420AW HIGH OLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH OLTAGE CAPABILITY ERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIE REQUIREMENTS APPLICATIONS: SWITCH MODE POWER SUPPLIES MOTOR CONTROL DESCRIPTION The BUF420AW is manufactured using High oltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter alue Unit CE Collector-Emitter oltage ( BE = -1.5) 1000 CEO Collector-Emitter oltage (I B = 0) 450 EBO Emitter-Base oltage (I C = 0) 7 I C Collector Current 30 A I CM Collector Peak Current (t p < 5 ms) 60 A I B Base Current 6 A I BM Base Peak Current (t p < 5 ms) 9 A P tot Total Dissipation at T c = 25 o C 200 W T stg Storage Temperature -65 to 150 T j Max. Operating Junction Temperature 150 o C o C March /8

2 THERMAL DATA R thj-case Thermal Resistance Junction-Case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CER I CE I EBO CEO(sus) EBO CE(sat) BE(sat) di c /dt CE (3) CE (5) CEW Collector Cut-off Current (R BE = 5 Ω) Collector Cut-off Current ( BE = -1.5) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining oltage (I B = 0) Emitter Base oltage (I C = 0) Collector-Emitter Saturation oltage Base-Emitter Saturation oltage Rate of rise on-state Collector Current Collector-Emitter Dynamic oltage Collector-Emitter Dynamic oltage INDUCTIE LOAD INDUCTIE LOAD Maximum Collector Emitter oltage without Snubber INDUCTIE LOAD CE = 1000 CE = 1000 CE = 1000 CE = 1000 T C = 100 o C T C = 100 o C ma ma ma ma EB = 5 1 ma I C = 200 ma L = 25 mh 450 I E = 50 ma 7 I C = 10A I C = 10A I B = 1 A I B = 1 A T C =100 o C I B = 4 A I B = 4 A T C =100 o C I B = 1 A I B = 1 A T C =100 o C I B = 4 A I B = 4 A T C =100 o C CC = 300 R C = 0 t p = 3 I B1 = 1.5 A T C =25 o C I B1 = 1.5 A T C =100 o C I B1 = 6 A T C =100 o C CC = 300 I B1 = 1.5 A I B1 = 1.5 A CC = 300 I B1 = 1.5 A I B1 = 1.5 A BB = - 5 clamp = 400 BB = - 5 clamp = 400 BB = - 5 T C =125 o C BB = 0 clamp = 400 R C = 60 Ω T C =25 o C T C =100 o C R C = 60 Ω T C =25 o C T C =100 o C CC = 50 CC = 50 T C =100 o C CC = 50 CC = 50 R BB = 0.15 Ω A/ A/ A/ /8

3 ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit CEW CEW INDUCTIE LOAD Maximum Collector Emitter oltage without Snubber INDUCTIE LOAD INDUCTIE LOAD Maximum Collector Emitter oltage without Snubber BB = 0 clamp = 400 BB = 0 T C =125 o C BB = -5 clamp = 400 L = 0.12 mh BB = - 5 clamp = 400 L = 0.12 mh I CWoff = 30 A BB = - 5 L = 0.12 mh T C =125 o C CC = 50 R BB = 0.15 Ω T C =100 o C CC = 50 R BB = 0.15 Ω CC = 50 R BB =0.6 Ω I B1 = 4 A CC = 50 I B1 = 4 A T C =125 o C CC = 50 I B1 = 6 A /8

4 DC Current Gain DC Current Gain Collector Emitter Saturation oltage Base Emitter Saturation oltage Forward Biased Safe Operating Area Reverse Biased Safe Operating Area 4/8

5 ersus Pulse Time. Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 5/8

6 Turn-on Switching Test Waveforms. Turn-off Switching Test Waveforms (inductive load). 6/8

7 TO-247 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A D E F F F G H L L L L M P025P 7/8

8 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may resulrom its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 8/8

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