Complementary N- and P-Channel 40-V (D-S) MOSFET
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1 New Product SUD5NP-9 Complementary N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a Q g (Typ) N-Channel. at V GS = V.5 at V GS =.5 V P-Channel -.53 at V GS = - V -.72 at V GS = -.5 V - 9 FEATURES TrenchFET MOSFET % R g and UIS Tested APPLICATIONS CCFL Inverter - LCD TV and Monitor RoHS COMPLIANT TO-252-L D-PAK D D Top View Drain Connected to Tab G G 2 S G S2 G2 Ordering Information: SUD5NP-9-T-E3 (Lead (Pb)-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 25 C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS - V Gate-Source Voltage V GS ± 2 ± T C = 25 C - T C = 7 C - Continuous Drain Current (T J = 5 C) I D T A = 25 C b, c - b, c T A = 7 C 7. b, c -.3 b, c Pulsed Drain Current ( µs Pulse Width) I DM A T C = 25 C - Source-Drain Current Diode Current I S T A = 25 C.9 b, c - 5 b, c Pulsed Source-Drain Current I SM Avalanche Current I AS 3 L =. mh Avalanche Energy E AS.5 3 mj T C = 25 C T C = 7 C.5 Maximum Dissipation P D W T A = 25 C 5.9 b, c. b, c T A = 7 C 3. b, c 3.9 b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C S S 2 THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ Max Typ Max Maximum Junction-to-Ambient b, d t sec R thja Maximum Junction-to-Case (Drain) Steady State R thjc Notes: a. Based on T C = 25 C. b. Surface Mounted on " x " FR Board. c. t = sec. d. Maximum under Steady State conditions is 5 C/W (N-Channel) and 53 C/W (P-Channel). Document Number: 7 S-277-Rev. A, 23-Oct- Unit C/W
2 SUD5NP-9 SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min Typ a Max Unit Static V GS = V, I D = 25 µa N-Ch Drain-Source Breakdown Voltage V DS V GS = V, I D = - 25 µa P-Ch - I D = 25 µa N-Ch V DS Temperature Coefficient ΔV DS /T J I D = - 25 µa P-Ch - I D = 25 µa N-Ch - 3. V GS(th) Temperature Coefficient ΔV GS(th) /T J I D = - 25 µa P-Ch 3. V DS = V GS, I D = 25 µa N-Ch..7 Gate Threshold Voltage V GS(th) V DS = V GS, I D = - 25 µa P-Ch V DS = V, V GS = ± 2 V N-Ch Gate-Body Leakage I GSS V DS = V, V GS = ± V P-Ch - V DS = V, V GS = V N-Ch V DS = - V, V GS = V P-Ch - Zero Gate Voltage Drain Current I DSS V DS = V, V GS = V, T J = 55 C N-Ch V DS = - V, V GS = V, T J = 55 C P-Ch - V DS = 5 V, V GS = V On-State Drain Current b N-Ch 2 I D(on) V DS = - 5 V, V GS = - V P-Ch - 2 V GS = V, I D = 5.2 A N-Ch.3. V GS = - V, I D = -.5 A Drain-Source On-State Resistance b P-Ch..53 r DS(on) V GS =.5 V, I D =.9 A N-Ch.37.5 V GS = -.5 V, I D = A P-Ch V DS = 5 V, I D = 5.2 A Forward Transconductance b N-Ch 3 g fs V DS = - 5 V, I D = -.5 A P-Ch Dynamic a N-Ch 7 Input Capacitance C iss N-Channel P-Ch 5 V DS = 2 V, V GS = V, f = MHz N-Ch 7 Output Capacitance C oss P-Ch 2 P-Channel V DS = - 2 V, V GS = V, f = MHz N-Ch 5 Reverse Transfer Capacitance C rss P-Ch 5 V DS = 2 V, V GS = V, I D = 5.2 A N-Ch 27 V Total Gate Charge Q DS = - 2 V, V GS = - V, I D = -.5 A P-Ch.5 2 g N-Ch 2 N-Channel P-Ch 9 V DS = 2 V, V GS =.5 V, I D = 5.2 A N-Ch.5 Gate-Source Charge Q gs P-Ch 2 P-Channel V DS = - 2 V, V GS = -.5 V, I D = -.5 A N-Ch 2. Gate-Drain Charge Q gd P-Ch 3. Gate Resistance R g f = MHz N-Ch.9 3 P-Ch.5 V na µa A Ω S pf nc Ω 2 Document Number: 7 S-277-Rev. A, 23-Oct-
3 SUD5NP-9 SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min Typ a Max Unit Dynamic a N-Ch 2 Turn-On Delay Time t d(on) N-Channel P-Ch 2 V DD = 2 V, R L = Ω N-Ch 2 3 Rise Time t r I D 5 A, V GEN = V, R g = Ω P-Ch Turn-Off Delay Time t d(off) P-Channel V DD = - 2 V, R L = Ω N-Ch P-Ch Fall Time t f I D - 5 A, V GEN = - V, R g = Ω N-Ch 3 P-Ch 7 N-Ch 5 Turn-On Delay Time t d(on) N-Channel P-Ch 3 V DD = 2 V, R L = Ω N-Ch 9 Rise Time t r I D 5 A, V GEN =.5 V, R g = Ω P-Ch 9 37 Turn-Off Delay Time t d(off) P-Channel V DD = - 2 V, R L = Ω N-Ch P-Ch Fall Time t f I D - 5 A, V GEN = -.5 V, R g = Ω N-Ch 9 P-Ch 7 72 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 C N-Ch P-Ch - Pulse Diode Forward Current a N-Ch 35 I SM P-Ch - 35 I S =.7 A N-Ch.75.2 Body Diode Voltage V SD I S = -.7 A P-Ch N-Ch 25 Body Diode Reverse Recovery Time t rr P-Ch 27 5 N-Channel N-Ch 7 2 Body Diode Reverse Recovery Charge Q rr I F =.7 A, di/dt = A/µs, T J = 25 C P-Ch 7 2 N-Ch Reverse Recovery Fall Time t a P-Channel I F = -.7 A, di/dt = - A/µs, T J = 25 C P-Ch 3 N-Ch Reverse Recovery Rise Time t b P-Ch Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 µs, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ns A V ns nc ns Document Number: 7 S-277-Rev. A, 23-Oct- 3
4 SUD5NP-9 N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless noted (A) V GS = thru 3 V (A) 2. Drain Current - I D 2 2 V Drain Current - I D.5. T C = 25 C.5 25 C Output Characteristics.2-55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics 2 r DS(on) - On-Resistance (Ω)..3.3 V GS =.5 V V GS = V Capacitance (pf) C - C iss.3 2 C rss I D - Drain Current (A) On-Resistance vs. Drain Current C oss 2 32 Capacitance. Gate-to-Source Voltage (V) V GS - 2 I D = 5.2 A V DS = V V DS = 2 V r D S(on ) - On-Resistanc e (Normalized) I D = 5.2 A 2 2 Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature Document Number: 7 S-277-Rev. A, 23-Oct-
5 SUD5NP-9 N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless noted IS - Source Current (A) T J = 5 C T J = 25 C r DS(on) - Drain-to-Source On-Resistanc e (Ω).2 I D = 5.2 A..2. T C = 25 C. T C = 25 C. 2 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage. 5 I D = 25 µa.2 V G S(th ) (V ). -.2 (W) T J - Temperature ( C) Threshold Voltage... Time (sec), Junction-to-Ambient 5 *Limited by r DS(on) (W) 3 2 (A) Drain Current µs ms ms ms I D -. T A = 25 C s DC... Time (sec), Junction-to-Case... *V GS minimum V GS at which r DS(on) isspecified Safe Operating Area, Junction-to-Ambient Document Number: 7 S-277-Rev. A, 23-Oct- 5
6 SUD5NP-9 N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless noted *Limited by r DS(on) 5 (A) Drain Current I D -... T C = 25 C. µs ms ms ms DC I D - Drain Current (A ) *V GS minimum V GS at which r DS(on) isspecified Safe Operating Area, Junction-to-Case Current Derating, Junction-to-Ambient Dissipation (W) 9 Limited by Package Dissipation (W) Current Derating, Junction-to-Case Derating, Junction-to-Ambient. 2. Dissipation (W) Derating, Junction-to-Case *The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 7 S-277-Rev. A, 23-Oct-
7 SUD5NP-9 N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless noted Duty Cycle =.5 Normalized Ef fective Transien t Thermal Impedance.2. Notes:..5 P DM.2 t t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 5 C/W 3. T JM T A = P DM Z (t) thja. Surface Mounted Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - Duty Cycle =.5 Normalized Effective Transien t Thermal Impedance Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case - Document Number: 7 S-277-Rev. A, 23-Oct- 7
8 SUD5NP-9 P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless noted I D - Drain Current (A) 2 V GS = thru V 3 V (A) Drain Current I D T C = 25 C.5 25 C Output Characteristics - 55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics.7 2 r DS(on) - On-Resistance (Ω) V GS =.5 V V GS = V Capacitance (pf) - C C iss C oss. 2 2 C rss 2 32 I D - Drain Current (A) On-Resistance vs. Drain Current Capacitance. Gate-to-Source Voltage (V) - r D S(on ) - On-Resistanc e (Normalized)...2. V G S Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature Document Number: 7 S-277-Rev. A, 23-Oct-
9 SUD5NP-9 P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless noted.3 I S - Source Current (A).. T J = 5 C T J = 25 C r DS(on) - Drain-to-Source On-Resistance (Ω) I D =.5 A.2..2 T A = 25 C. T A = 25 C. 2 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage. I D = 25 µa 5. V G S(th ) (V ).2. (W) T J - Temperature ( C) Threshold Voltage 5... Time (sec), Junction-to-Ambient *Limited by r DS(on) (A) µs (W) 3 2 Drain Current ms ms ms - I D. T A = 25 C s DC... Time (sec), Junction-to-Case... *V GS minimum V GS at which r DS(on) isspecified Safe Operating Area, Junction-to-Ambient Document Number: 7 S-277-Rev. A, 23-Oct- 9
10 SUD5NP-9 P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless noted *Limited by r DS(on) I D - Drain Current (A). T C = 25 C µs ms ms ms s I D - Drain Current (A ) *V GS minimum V GS at which r DS(on) isspecified Safe Operating Area, Junction-to-Case Current Derating, Junction-to-Ambient I D - Drain Current (A ) 9 Limited by Package Dissipation (W) Current Derating, Junction-to-Case Derating, Junction-to-Ambient 2 Dissipation (W) Derating, Junction-to-Case *The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 7 S-277-Rev. A, 23-Oct-
11 SUD5NP-9 P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless noted Duty Cycle =.5 Normalized Effective Transien t Thermal Impedance t.2. Notes:..5 P DM.2 t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 53 C/W 3. T JM T A = P DM Z (t) thja.. Surface Mounted Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - Duty Cycle =.5 Normalized Effective Transien t Thermal Impedance Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: 7 S-277-Rev. A, 23-Oct-
12 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: -Jul-
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