DATA SHEET. BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors DISCRETE SEMICONDUCTORS

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1 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of April 995 File under Discrete Semiconductors, SC7 996 Jul 29

2 FEATURES Low leakage level (typ. 5 fa) High gain Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS 2 Impedance converters in e.g. electret microphones and infra-red detectors VHF amplifiers in oscillators and mixers. g d s DESCRIPTION Top view 3 MAM36 N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 PIN SYMBOL DESCRIPTION s source 2 d drain 3 g gate Marking codes: BF545A: M65. BF545B: M66. BF545C: M67. Fig. Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage ±3 V V GSoff gate-source cut-off voltage I D =µa; V DS =5V V I DSS drain current V GS = ; V DS =5V BF545A ma BF545B 6 5 ma BF545C 2 25 ma P tot total power dissipation up to T amb =25 C 25 mw y fs forward transfer admittance V GS = ; V DS = 5 V ms 996 Jul 29 2

3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage ±3 V V GSO gate-source voltage open drain 3 V V GDO gate-drain voltage (DC) open source 3 V I G forward gate current (DC) ma P tot total power dissipation up to T amb =25 C; note 25 mw T stg storage temperature 65 5 C T j operating junction temperature 5 C Note. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead mm 2. 4 P tot (mw) MBB T amb ( C) Fig.2 Power derating curve. 996 Jul 29 3

4 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th j-a thermal resistance from junction to ambient; note 5 K/W Note. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead mm 2. STATIC CHARACTERISTICS T j =25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)GSS gate-source breakdown voltage I G = µa; V DS = 3 V V GSoff gate-source cut-off voltage I D = 2 µa; V DS =5V BF545A V BF545B V BF545C V I D =µa; V DS =5V V I DSS drain current V GS = ; V DS =5V BF545A ma BF545B 6 5 ma BF545C 2 25 ma I GSS gate leakage current V GS = 2 V; V DS =.5 pa V GS = 2 V; V DS =; na T j = 25 C y fs forward transfer admittance V GS = ; V DS =5V ms y os common source output admittance V GS = ; V DS =5V 4 µs 996 Jul 29 4

5 DYNAMIC CHARACTERISTICS T amb =25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. UNIT C is input capacitance V DS =5V; V GS = V; f = MHz.7 pf V DS =5V; V GS = ; f = MHz 3 pf C rs reverse transfer capacitance V DS =5V; V GS = V; f = MHz.8 pf V DS =5V; V GS = ; f = MHz.9 pf g is common source input conductance V DS =V; I D = ma; f = MHz 5 µs V DS =V; I D = ma; f = 45 MHz 3 µs g fs common source transfer V DS =V; I D = ma; f = MHz 2 ms conductance V DS =V; I D = ma; f = 45 MHz.8 ms g rs common source reverse V DS =V; I D = ma; f = MHz 6 µs conductance V DS =V; I D = ma; f = 45 MHz 4 µs g os common source output V DS =V; I D = ma; f = MHz 3 µs conductance V DS =V; I D = ma; f = 45 MHz 6 µs 3 MBB467 6 MBB466 I DSS 2 Y fs (ms) V GSoff (V) V GSoff (V) Fig.3 Drain current as a function of gate-source cut-off voltage; typical values. V DS = 5 V; V GS = ; T j =25 C. Fig.4 Forward transfer admittance as a function of gate-source cut-off voltage; typical values. 996 Jul 29 5

6 8 MBB465 3 MBB464 Y os (µs) R DSon (Ω) V GSoff (V) V GSoff (V) V DS = 5 V; V GS = ; T j =25 C. V DS = mv; V GS = ; T j =25 C. Fig.5 Common-source output admittance as a function of gate-source cut-off voltage; typical values. Fig.6 Drain-source on-resistance as a function of gate-source cut-off voltage; typical values. 6 MBB462 6 MBB463 I D V GS = V I D V 2 2. V V DS (V) 3 2 V GS (V) T j =25 C. Fig.7 Typical output characteristics; BF545A. Fig.8 Typical input characteristics; BF545A. 996 Jul 29 6

7 6 MBB46 6 MBB459 I D 2 VGS = V I D 2.5 V 8 V 8.5 V 4 2 V 2.5 V V 6 DS (V) V GS (V) T j =25 C. Fig.9 Typical output characteristics; BF545B. Fig. Typical input characteristics; BF545B. 3 MBB457 3 MBB456 I D I D 2 V GS = V 2 V 2 V 3 V 4 V V 6 V DS (V) V GS (V) T j =25 C. Fig. Typical output characteristics; BF545C. Fig.2 Typical input characteristics; BF545C. 996 Jul 29 7

8 3 handbook, I halfpage D (µa) 2 MBB46 3 handbook, I halfpage D (µa) 2 MBB V GS (V) V GS (V) Fig.3 Drain current as a function of gate-source voltage; typical values for BF545A. Fig.4 Drain current as a function of gate-source voltage; typical values for BF545B. 3 handbook, I halfpage D (µa) 2 MBB455 2 I G (pa) I D = ma MBB454 ma I GSS 2. ma V GS (V) 2 V DG (V) 2 Fig.5 Drain current as a function of gate-source voltage; typical values for BF545C. I D = ma only for BF545B and BF545C; T j =25 C. Fig.6 Gate current as a function of drain-gate voltage; typical values. 996 Jul 29 8

9 3 MBB453 MBB452 I GSS (pa) 2 C rs (pf) T j ( C) 5 5 V GS (V) V DS = ; V GS = 2 V. Fig.7 Gate current as a function of junction temperature; typical values. Fig.8 Reverse transfer capacitance as a function of gate-source voltage; typical values. 3 C is (pf) MBB45 2 y is (ms) MBB468 2 b is g is 5 V GS (V) 2 2 f (MHz) 3 Fig.9 Typical input capacitance. V DS = V; I D = ma; T amb =25 C. Fig.2 Common-source input admittance; typical values. 996 Jul 29 9

10 2 Y fs (ms) MBB469 y rs (ms) MBB47 b rs g fs bfs 2 g rs 2 f (MHz) f (MHz) 3 V DS = V; I D = ma; T amb =25 C. Fig.2 Common-source forward transfer admittance; typical values. V DS = V; I D = ma; T amb =25 C. Fig.22 Common-source reverse transfer admittance; typical values. MBB47 y os (ms) b os g os 2 2 f (MHz) 3 V DS = V; I D = ma; T amb =25 C. Fig.23 Common-source output admittance; typical values. 996 Jul 29

11 PACKAGE OUTLINE handbook, full pagewidth A B.2 M A o max. max o max max 3. max 3 o max TOP VIEW. M A B MBC846 Dimensions in mm. Fig.24 SOT Jul 29

12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 996 Jul 29 2

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