Optocoupler, Phototransistor Output, AC Input

Transcription

1 TCET16, TCET16G Optocoupler, Phototransistor Output, Vishay Semiconductors 17197_4 DESCRIPTION The TCET16, TCET16G consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in a single (4 pin) package. VDE STANDARDS These couplers perform safety functions according to the following equipment standards: DIN EN (VDE 884) Optocoupler for electrical safety requirements IEC 695/EN 695 Office machines (applied for reinforced isolation for mains voltage 4 V RMS ) VDE 84 Telecommunication apparatus and data processing IEC 665 Safety for mains-operated electronic and related household apparatus VDE 7/IEC 335 Household equipment VDE 16 Electronic equipment for electrical power installation VDE 75/IEC 661 Medical equipment C C E A C 4 PIN V D E FEATURES Isolation materials according to UL94 V-O Pollution degree 2 (DIN/VDE 11 /resp. IEC 6664) Climatic classification 55/1/21 (IEC 668 part 1) Special construction: therefore, extra low coupling capacity of typical.2 pf, high common mode rejection Low temperature coefficient of CTR Rated impulse voltage (transient overvoltage) V IOTM = 1 kv peak Isolation test voltage (partial discharge test voltage) V pd = 1.6 kv peak Rated isolation voltage (RMS includes DC) V IOWM = 6 V RMS Rated recurring peak voltage (repetitive) V IORM = 89 V peak Thickness though insulation.75 mm Creepage current resistance according to VDE 33/ IEC 6112 comparative tracking index: CTI 175 Compliant to RoHS Directive 22/95/EC and in accordance to WEEE 22/96/EC AGENCY APPROVALS UL1577, file no. E52744 system code H, double protection CSA 22.2 bulletin 5A DIN EN (VDE 884) DIN EN (pending) FIMKO ORDERING INFORMATION T C E T 1 6 # DIP DIP, 4 mil PART NUMBER AGENCY CERTIFIED/PACKAGE CTR (%) ± 5 ma UL, cul, VDE, FIMKO 2 to 3 DIP-4, single channel TCET16 DIP-4, single channel, 4 mil TCET16G Note G = leadform 1.16 mm; G is not marked on the body mm 1.16 mm Document Number: For technical questions, contact: optocoupleranswers@vishay.com Rev. 1.9, 1-Dec-1 1

2 TCET16, TCET16G Vishay Semiconductors Optocoupler, Phototransistor Output, ABSOLUTE MAXIMUM RATINGS (1) ( = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current ± 6 ma Forward surge current t p 1 μs SM ± 1.5 A Power dissipation P diss 1 mw Junction temperature T j 125 C OUTPUT Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p 1 ms I CM 1 ma Power dissipation P diss 15 mw Junction temperature T j 125 C COUPLER Isolation test voltage (RMS) t = 1 s V ISO 53 V RMS Isolation voltage V IORM 89 V P Total power dissipation P tot 25 mw Operating ambient temperature range - 55 to + 1 C Storage temperature range T stg - 55 to + 15 C Soldering temperature (2) 2 mm from case, t 1 s T sld 26 C Notes (1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTCS ( = 25 C, unless otherwise specified) INPUT Forward voltage = ± 5 ma V F V Junction capacitance V R = V, f = 1 MHz C j 5 pf OUTPUT Collector emitter voltage I C = 1 μa V CEO 7 V Emitter collector voltage I E = 1 μa V ECO 7 V Collector dark current V CE = 2 V, =, E = I CEO 1 na COUPLER Collector emitter saturation voltage = 1 ma, I C = 1 ma V CEsat.3 V Cut-off frequency V CE = 5 V, = 1 ma, R L = 1 Ω f c 1 khz Coupling capacitance f = 1 MHz C k.3 pf Note Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev. 1.9, 1-Dec-1

3 Optocoupler, Phototransistor Output, TCET16, TCET16G Vishay Semiconductors CURRENT TRANSFER RATIO I C / V CE = 5 V, = ± 5 ma CTR 2 3 % MAXIMUM SAFETY RATINGS INPUT Forward current 275 ma OUTPUT Power dissipation P diss 4 mw COUPLER Rated impulse voltage V IOTM 1 kv Safety temperature T si 175 C Note According to DIN EN (VDE 884) (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS Partial discharge test voltage - routine test 1 %, t test = 1 s V pd kv Partial discharge test voltage - lot test (sample test) Insulation resistance t Tr = 6 s, t test = 1 s, (see figure 2) V IOTM 1 kv V pd kv V IO = 5 V R IO 1 12 Ω V IO = 5 V, = 1 C R IO 1 11 Ω V IO = 5 V, = 15 C (construction test only) R IO 1 9 Ω P tot - Total Power Dissipation (mw) IR-diode I si (ma) Phototransistor P si (mw) T si - Safety Temperature ( C) V IOTM 1393 V Pd V IOWM V IORM t 1 t 1, t 2 = 1 to 1 s t 3, t 4 = 1 s t test = 1 s t stres = 12 s t Tr = 6 s t 3 t test t 4 t 2 t stres t Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test acc. to DIN EN (VDE 884); IEC Document Number: For technical questions, contact: optocoupleranswers@vishay.com Rev. 1.9, 1-Dec-1 3

4 TCET16, TCET16G Vishay Semiconductors Optocoupler, Phototransistor Output, SWITCHING CHARACTERISTICS Delay time V S = 5 V, I C = 2 ma, R L = 1 Ω, (see figure 3) t d 3 μs Rise time V S = 5 V, I C = 2 ma, R L = 1 Ω, (see figure 3) t r 3 μs Turn-on time V S = 5 V, I C = 2 ma, R L = 1 Ω, (see figure 3) t on 6 μs Storage time V S = 5 V, I C = 2 ma, R L = 1 Ω, (see figure 3) t s.3 μs Fall time V S = 5 V, I C = 2 ma, R L = 1 Ω, (see figure 3) t f 4.7 μs Turn-off time V S = 5 V, I C = 2 ma, R L = 1 Ω, (see figure 3) t off 5 μs Turn-on time V S = 5 V, = 1 ma, R L = 1 kω, (see figure 4) t on 9 μs Turn-off time V S = 5 V, = 1 ma, R L = 1 kω, (see figure 4) t off 1 μs R G = 5 Ω t p T =.1 t p = 5 µs + 5 V I C = 2 ma; adjusted through input amplitude I C 1 % 9 % t p t Ω 1 Ω Channel I Channel II Oscilloscope R L > 1 MΩ C L < 2 pf 1 % t p t d t r t on (= t d + t r ) t r t d t on Pulse duration Delay time Rise time Turn-on time t s t f t off t s t f t off (= t s + t f ) t Storage time Fall time Turn-off time Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 5 - Switching Times R G = 5 t p T =.1 t p = 5 µs = 1 ma + 5 V I C 5 1 k Channel I Channel II Oscilloscope R L > 1 M C L < 2 pf Fig. 4 - Test Circuit, Saturated Operation For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev. 1.9, 1-Dec-1

5 Optocoupler, Phototransistor Output, TYPICAL CHARACTERISTICS ( = 25 C, unless otherwise specified) TCET16, TCET16G Vishay Semiconductors P tot - Total Power Dissipation (mw) 3 Coupled device 25 2 Phototransistor 15 IR-diode Ambient Temperature ( C) Fig. 6 - Total Power Dissipation vs. Ambient Temperature I CE - Leakage Current (na) 1 = ma 1 1 V CE = 4 V 1 1 V CE = 24V.1 V CE = 12 V Ambient Temperature ( C) Fig. 9 - Leakage Current vs. Ambient Temperature V F - Forward Voltage (V) = - 55 C = C = - 4 C = 1 C = 25 C = 5 C = 75 C Forward Current (ma) I C - Collector Current (ma) = 1 ma = 25 ma = 1 ma = 5 ma = 2 ma V CE - Collector Emitter Voltage (sat) (V) Fig. 7 - Forward Current vs. Forward Voltage Fig. 1 - Collector Current vs. Collector Emitter Voltage (sat) I C - Collector Current (ma) 5 45 = 3 ma 4 = 2 ma 35 3 = 15 ma 25 = 1 ma 2 15 I 1 F = 5 ma V CE - Collector Emitter Voltage (NS) (V) Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS) N CTR - Normalized CTR (NS) V CE = 5 V = 1 ma 1. = 5 ma.8.6 I.4 F = 1 ma Ambient Temperature ( C) Fig Normalized CTR (NS) vs. Ambient Temperature Document Number: For technical questions, contact: optocoupleranswers@vishay.com Rev. 1.9, 1-Dec-1 5

6 TCET16, TCET16G Vishay Semiconductors Optocoupler, Phototransistor Output, N CTR - Normalized CTR (sat) = 5 ma V CE =.4 V 1. = 1 ma.8.6 = 1 ma Ambient Temperature ( C) Fig Normalized CTR (sat) vs. Ambient Temperature Phase (deg) V CE = 5 V f (khz) Fig F CTR vs. Phase Angle N CTR - Normalized CTR (NS) = C = - 4 C = - 55 C = 5 C V CE = 5 V = 25 C.2 = 75 C = 1 C Forward Current (ma) Fig Normalized CTR (NS) vs. Forward Current F CTR (khz) I C (ma) Fig F CTR vs. I C V CC = 5 V N CTR - Normalized CTR (sat) V CE =.4 V 1. = C = - 4 C.8 = - 55 C.6 T.4 amb = 25 C = 5 C.2 = 75 C = 1 C Forward Current (ma) Fig Normalized CTR (sat) vs. Forward Current t on, t off - Switching Time (μs) 1 V CE = 5 V, = 1 ma 1 t off (μs) 1 1 t on (μs) R L - Load Resistance (kω) Fig Switching Time vs. Load Resistance For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev. 1.9, 1-Dec-1

7 PACKAGE DIMENSIONS in millimeters Optocoupler, Phototransistor Output, TCET16, TCET16G Vishay Semiconductors 2 1 Pin one ID ISO method A typ typ typ i typ to Option typ. 3.5 ±.3.1 min ± typ. PACKAGE MARKING (example) TCET V YWW H 68 Document Number: For technical questions, contact: optocoupleranswers@vishay.com Rev. 1.9, 1-Dec-1 7

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