.MEDIUM-SPEED OPERATION
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1 HEX INVERTER.MEDIUM-SPEED OPERATION tphl, tplh = 30ns (typ.) AT 10V QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS 5V, 10V, AND 15V PARAMETRIC RATINGS INPUT CURRENT OF 100nA AT 18V AND. 25 C FOR HCC DEVICE 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC TEN- TATIVE STANDARD N 13A, STANDARD SPE- CIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES EY (Plastic Package) M1 (Micro Package) F (Ceramic Frit Seal Package) C1 (Plastic Chip Carrier) ORDER CODES : HCC4069UBF HCF4069UBM1 HCF4069UBEY HCF4069UBC1 PIN CONNECTIONS DESCRIPTION The HCC4069UB (extended temperature range) and HCF4069UB (intermediate temperature range) are monolithic integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4069UB consists of six COS/MOS inverter circuits. This device is intended for all generalpurpose inverter applications where the medium-power TTL-drive and logic-level-conversion capabilities of circuits such as HCC/HCF4049B Hex Inverter/Buffers are not required. June /12
2 SCHEMATIC DIAGRAM OF ONE OF SIX IDENTICAL INVERTERS. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DD * Supply Voltage : HCC Types HCF Types 0.5 to to + 18 V V V i Input Voltage 0.5 to V DD V I I DC Input Current (any one input) ± 10 ma P tot Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package-temperature Range mw mw T op Operating Temperature : HCC Types HCF Types 55 to to+85 T stg Storage Temperature 65 to C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to V SS pin voltage. C C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit V DD Supply Voltage : HCC Types HCF Types 3to18 3to15 V I Input Voltage 0 to V DD V T op Operating Temperature : HCC Types HCF Types 55 to to+85 V V C C 2/12
3 STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Test Conditions Value Symbol Parameter V I V O I O V DD T Low * 25 C T High * Unit (V) (V) (µa) (V) Min. Max. Min. Typ. Max. Min. Max. I L Quiescent 0/ Current HCC 0/ Types 0/ / µa 0/ HCF Types 0/ / V OH Output High 0/ 5 < Voltage 0/10 < V 0/15 < V OL Output Low 5/0 < Voltage 10/0 < V 15/0 < V IH Input High 0.5/4.5 < Voltage 1/9 < V 1.5/13.5 < V IL Input Low 4.5/0.5 < Voltage 9/1 < V 13.5/1.5 < I OH Output 0/ Drive HCC 0/ Current Types 0/ / ma 0/ HCF 0/ Types 0/ / I OL Output 0/ Sink HCC 0/ Current Types 0/ ma 0/ HCF Types 0/ / I IH,I IL Input HCC Leakage Types 0/18 18 ± 0.1 ±10 5 ± 0.1 ± 1 Any Input Current HCF Types 0/15 15 ± 0.3 ±10 5 ± 0.3 ± 1 µa C I Input Capacitance Any Input pf *T Low = 55 C for HCC device : 40 C forhcf device. *T High = C for HCC device : + 85 C for HCF device. The Noise Margin for both 1 and 0 level is : 1V min. with V DD = 5V, 2V min. with V DD = 10V, 2.5V min. with V DD = 15V. 3/12
4 DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25 C, C L = 50pF, R L = 200kΩ, typical temperature coefficient for all V DD = 0.3%/ C values, all input rise and fall time = 20ns) Symbol Parameter Test Conditions Value V DD (V) Min. Typ. Max. t PLH,t PHL Propagation Delay Time t TLH,t THL Transition Time Unit ns ns Minimum and Maximum Voltage Transfer Characteristics. Typical Voltage Transfer Characteristics as a Function of Temperature. Typical Current and Voltage Transfer Characteristics. Typical Output Low (sink) Current Characteristics. 4/12
5 Minimum Output Low (sink) Current Characteristics. Typical Output High (source) Current Characteristics. Minimum Output High (source) Current Characteristics. Typical Propagation Delay Time vs. Load Capacitance. Typical Propagation Delay Time vs. Load Capacitance. Typical Transition Time vs. Load Capacitance. 5/12
6 Typical Dynamic Power Dissipation/per Inverter vs. Frequency. Variation of Normalized Propagation Delay Time (t PHL and t PLH ) with Supply Voltage. APPLICATIONS Typical Crystal Oscillator Circuit. Typical RC Oscillator Circuit. High Input Impedance Amplifier. Input Pulse Shaping Circuit (schmitt trigger). 6/12
7 DYNAMIC ELECTRICAL CHARACTERISTICS AND WAVEFORMS TEST CIRCUITS Quiescent Device Current. Noise Immunity. Input Leakage Current. 7/12
8 Plastic DIP14 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. a B b b D E e e F I L Z P001A 8/12
9 Ceramic DIP14/1 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E e F G H L M N P Q P053C 9/12
10 SO14 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A a a b b C c1 45 (typ.) D E e e F G L M S 8 (max.) P013G 10/12
11 PLCC20 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D d d E e e F G M M P027A 11/12
12 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 12/12
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