CoolMOS TM Power Transistor

Transcription

1 CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS 8 V R T j = 25 C.45 Ω Q g,typ 64 nc PG-TO247-3 Ultra low gate charge Ultra low effective capacitances CoolMOS TM 8V designed for: Industrial application with high DC bulk voltage Switching Application (i.e. active clamp forward) Type Package Marking SPW11N8C3 PG-TO N8C3 Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C =25 C 11 A T C =1 C Pulsed drain current 2) I D,pulse T C =25 C Avalanche energy, single pulse E AS I D =2.2 A, V DD =5 V 47 mj Avalanche energy, repetitive t AR 2),3) E AR I D =11 A, V DD =5 V.2 2),3) Avalanche current, repetitive t AR I AR 11 A MOSFET dv /dt ruggedness dv /dt V DS = 64 V 5 V/ns Gate source voltage V GS static ±2 V AC (f >1 Hz) ±3 Power dissipation P tot T C =25 C 156 W Operating and storage temperature T j, T stg C Mounting torque M2.5 screws 5 Ncm Rev page

2 Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous diode forward current I S T C =25 C 11 A Diode pulse current 2) I S,pulse 33 Reverse diode dv /dt 4) dv /dt 4 V/ns Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc K/W Thermal resistance, junction - ambient R thja leaded Soldering temperature, wave soldering only allowed at leads T sold 1.6 mm (.63 in.) from case for 1s C Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =25 µa V Avalanche breakdown voltage V (BR)DS V GS = V, I D =11 A Gate threshold voltage V GS(th) V DS =V GS, I D =.68 ma Zero gate voltage drain current I DSS V DS =8 V, V GS = V, T j =25 C V DS =8 V, V GS = V, T j =15 C µa Gate-source leakage current I GSS V GS =2 V, V DS = V na Drain-source on-state resistance R DS(on) V GS =1 V, I D =7.1 A, T j =25 C V GS =1 V, I D =7.1 A, T j =15 C Ω Gate resistance R G f =1 MHz, open drain Ω Rev page

3 Parameter Symbol Conditions Values Unit Dynamic characteristics min. typ. max. Input capacitance C iss V GS = V, V DS =1 V, pf Output capacitance C oss f =1 MHz Effective output capacitance, energy related 5) C o(er) V GS = V, V DS = V to 48 V Effective output capacitance, time related 6) C o(tr) Turn-on delay time t d(on) ns Rise time t r V DD =4 V, V GS =/1 V, I D =11 A, Turn-off delay time t d(off) R G =7.5?, T j =25 C Fall time t f Gate Charge Characteristics Gate to source charge Q gs nc Gate to drain charge Q gd V DD =64 V, I D =11 A, Gate charge total Q g V GS = to 1 V Gate plateau voltage V plateau V Reverse Diode Diode forward voltage V SD V GS = V, I F =I S =11 A, T j =25 C V Reverse recovery time t rr V R =4 V, ns Reverse recovery charge Q rr I F =I S =11 A, µc Peak reverse recovery current I rrm di F /dt =1 A/µs A 1) J-STD2 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV =E AR *f. 4) I SD =I D, di/dt=2a/µs, V DClink = 4V, V peak <V (BR)DSS, T j <T jmax, identical low side and high side switch 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Rev page

4 1 Power dissipation 2 Safe operating area P tot =f(t C ) I D =f(v DS ); T C =25 C; D = parameter: t p limited by on-state resistance 12 1 µs 1 µs µs P tot [W] 8 6 I D [A] 1 DC 1 ms 1 ms T C [ C] V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics Z thjc =f(t P ) I D =f(v DS ); T j =25 C; t p =1 µs parameter: D=t p /T 1 parameter: V GS 4 2 V V Z thjc [K/W] I D [A] 2 6 V V single pulse 1 5 V 4.5 V t p [s] V DS [V] Rev page

5 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D =f(v DS ); T j =15 C; t p =1 µs R DS(on) =f(i D ); T j =15 C SPW11N8C3 parameter: V GS parameter: V GS V 6 V 1 V I D [A] V 5.5 V R DS(on) [W] V 6.5 V 1 V 2 V V V 4.5 V 5 V V DS [V] I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on) =f(t j ); I D =7.1 A; V GS =1 V I D =f(v GS ); V DS >2 I D R DS(on)max; t p =1 µs parameter: T j C R DS(on) [W].6 98 % I D [A] 2 15 C.4 typ T j [ C] V GS [V] Rev page

6 9 Typ. gate charge 1 Forward characteristics of reverse diode V GS =f(q gate ); I D =11 A pulsed I F =f(v SD ); t p =1 µs parameter: V DD 1 parameter: T j C (98 C) 8 16 V 64 V C 15 C (98%) 6 15 C V GS [V] I F [A] Q gate [nc] V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS =f(t j ); I D =2.2 A; V DD =5 V V BR(DSS) =f(t j ); I D =.25 ma E AS [mj] 3 2 V BR(DSS) [V] T j [ C] T j [ C] Rev page

7 13 Typ. capacitances 14 Typ. Coss stored energy C =f(v DS ); V GS = V; f =1 MHz E oss = f(v DS ) Ciss C [pf] 1 2 Coss E oss [µj] Crss V DS [V] V DS [V] Rev page

8 Definition of diode switching characteristics Rev page

9 PG-TO247-3: Outline Dimensions in mm/inches Rev page

10 Published by Infineon Technologies AG Munich, Germany 28 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev page

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