TDA8170 TV VERTICAL DEFLECTION OUTPUT CIRCUIT. The functions incorporated are : POWER AMPLIFIER FLYBACK GENERATOR REFERENCE VOLTAGE THERMAL PROTECTION

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1 TV VERTICAL DEFLECTION OUTPUT CIRCUIT The functions incorporated are : POWER AMPLIFIER. FLYBACK GENERATOR REFERENCE VOLTAGE THERMAL PROTECTION DESCRIPTION The is a monolithic integrated circuit in HEPTAWATT TM package. It is a high efficiency power booster for direct driving of vertical windings of TV yokes. It is intended for use in Colour and B & W television receivers as well as in monitors and displays. HEPTAWATT (Plastic Package) ORDER CODE : PIN CONNECTIONS Tab connected to Pin REFERENCE VOLTAGE AND NON-INVERTING INPUT OUTPUT STAGE SUPPLY OUTPUT GROUND FLYBACK GENERATOR SUPPLY VOLTAGE INVERTING INPUT 80-0.EPS BLOCK DIAGRAM REFERENCE VOLTAGE FLYBACK GENERATOR POWER AMPLIFIER THERMAL P ROTECTION 80-0.EPS YOKE December 99 /

2 Q Q0 Q R D D R D Q Q Q9 D D R Q R Q R8 R9 Q Q8 Q9 Q R Q Q0 D9 D8 R0 Q Q Q8 R C Q C R Q R D Q D Q Q Q Q R Z Q R R9 R Z Q R R Q Q8 Q9 R8 R 80-0.EPS SCHEMATIC DIAGRAM /

3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V S Supply Voltage (pin ) V V, V Flyback Peak Voltage 0 V V Voltage at Pin + V s V, V Amplifier Input Voltage + V s, 0. V I o Output Peak Current (non repetitive, t = msec). A I o Output Peak Current at f = 0 or 0 Hz, t 0 µsec A I o Output Peak Current at f = 0 or 0 Hz, t > 0 µsec A I Pin DC Current at V <V 00 ma I Pin Peak to Peak Flyback Current at f= 0 or 0 Hz, t fly.msec A P tot Total Power Dissipation at T case =90 C 0 W T stg, T j Storage and Junction Temperature 0, +0 C 80-0.TBL THERMAL DATA Symbol Parameter Value Unit R th j case Thermal Resistance Junction-case Max. C/W 80-0.TBL ELECTRICAL CHARACTERISTICS (refer to the test circuits, VS = V, Tamb = o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit Fig. I Pin Quiescent Current I =0,I =0 8 ma a I Pin Quiescent Current I =0,I = 0 ma a I Amplifier Input Bias Current V = V 0. µa a V Reference Voltage. V a V V S Reference Voltage Drift versus Supply Voltage V s = to 0 V mv/v a V L Pin Saturation Voltage to GND I =0mA V c V Quiescent Output Voltage V s =V,R a =9kΩ 8 V d Vs = V,Ra = kω. V d V L Output Saturation Voltage to GND I =. A. V c I = 0. A 0. V c VH Output Saturation Voltage to Supply I =. A.. V b I = 0. A..8 V b T j Junction Temperature for Thermal Shut Down 0 C 80-0.TBL /

4 Figure a : Measurement of I,I,I,V, V/ VS Figure b : Measurement of V H I I V H S 0kΩ a b I V -I V S : (a) I and I ; (b) I V 80-0.EPS 80-0.EPS Figure c : Measurement of V L,V L Figure d : Measurement of V I or I V b S a kω V V R a S : (a) V L ; (b) V L V L V L 80-0.EPS.kΩ 80-0.EPS Figure : Application Schematic N00 V S C 0.µF C 0µF D C 0µF t fly GND to V i RT IN.kΩ R 0kΩ C µf R.kΩ R kω C.µF R 8.kΩ C 0.µF R.Ω C 00µF Iy R 0Ω Ly.mH Ry 9.Ω to V R Iy R Ω to EPS /

5 Figure : PC Board and Component layout of the Circuit of fig. ( : scale) C C C D R R C R R R R R C R GND V S YOKE YOKE GND V IN ( V O ) EPS COMPONENTS LIST FOR TYPICAL APPLICATIONS Component 0 TVC.9 Ω/0 mh.9 App 0 TVC 9. Ω/. mh. App 90 TVC Ω/0 mh 0.8 App RT 0. 0 kω R 0 kω R 0.. kω R 8 kω R 8.. kω R 0.8 Ω R Ω R... Ω D N 00 N 00 N 00 C µf C ei. 000/ V 0/ V 0/ V µf C ei. 0/ V 0/ V 0/ V µf C µf C ei. 00/ V 00/ V 000/ V µf C ei../ V./ V 0/ V µf C.0/V.0/V.0/V µf Unit 80-0.TBL /

6 TYPICAL PERFORMANCES Parameter 0 TVC.9 Ω/0 mh 0 TVC 9. Ω/ mh 90 TVC Ω/0 mh Vs - Supply Voltage. V I s - Current 80 ma t fly - Flyback Time ms P tot - Power Dissip....0 W R th o-a - Heatsink C/W T amb C T j max C T o ms V I... V pp V... Vp Unit 80-0.TBL MOUNTING INSTRUCTIONS The power dissipated in the circuit must be removed by adding an external heatsink. Thanks to the HEPTAWATT TM package attaching the heatsink is very simple, a screw a compression spring (clip) being sufficient. Between the heatsink and the packageit isbetter to insert a layerof silicon grease, to optimize the thermal contact ; no electrical isolation is needed between the two surfaces. Figure : Mounting Examples 80-0.EPS /

7 PACKAGE MECHANICAL DATA : PINS - PLASTIC HEPTAWATT PM-HEPTV.EPS Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A C. 0.0 D D E F F G G G H H L L L L L L L M M Dia HEPTV.TBL Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licenceis granted by implicationor otherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This pu blication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 99 SGS-THOMSON Microelectronics - All Rights Reserved Purchase of I C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips I C Patent. Rights to use these components in a I C system, is granted provided that the system conforms to the I C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. /