IGBT HighspeedIGBTinTrenchandFieldstoptechnology. IGW50N60H3 600Vhighspeedswitchingseriesthirdgeneration. Datasheet. IndustrialPowerControl

Transcription

1 IGBT HighspeedIGBTinTrenchandFieldstoptechnology 6Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl

2 G C E Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology Features: TRENCHSTOP TM technologyoffering verylowvcesat lowemi Verysoft,fastrecoveryantiparalleldiode maximumjunctiontemperature175 C qualifiedaccordingtojedecfortargetapplications Pbfreeleadplating;RoHScompliant completeproductspectrumandpspicemodels: Applications: uninterruptiblepowersupplies weldingconverters converterswithhighswitchingfrequency G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package 6V 5A 1.85V 175 C G5H63 PGTO Rev.2.2,214312

3 Highspeedswitchingseriesthirdgeneration TableofContents Description Table of Contents Maximum ratings Thermal Resistance Electrical Characteristics Electrical Characteristics diagrams Package Drawing Testing Conditions Revision History Disclaimer Rev.2.2,214312

4 Highspeedswitchingseriesthirdgeneration Maximumratings Parameter Symbol Value Unit Collectoremittervoltage,Tvj 25 C VCE 6 V DCcollectorcurrent,limitedbyTvjmax TC=25 C TC= C IC. 5. Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 2. A Turn off safe operating area VCE 6V,Tvj 175 C,tp=1µs 2. A Gateemitter voltage VGE ±2 V Short circuit withstand time VGE=15.V,VCC 4V Allowed number of short circuits < Time between short circuits: 1.s Tvj=15 C PowerdissipationTC=25 C PowerdissipationTC= C tsc Ptot Operating junction temperature Tvj C Storage temperature Tstg C Soldering temperature, wave soldering 1.6 mm (.63 in.) from case for s 26 Mounting torque, M3 screw Maximum of mounting processes: 3 A µs W C M.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction case Thermal resistance junction ambient Rth(jc).45 K/W Rth(ja) 4 K/W ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=2.mA 6 V Collectoremitter saturation voltage VCEsat VGE=15.V,IC=5.A Tvj=25 C Tvj=125 C Tvj=175 C Gateemitter threshold voltage VGE(th) IC=.8mA,VCE=VGE V Zero gate voltage collector current ICES VCE=6V,VGE=V Tvj=25 C Tvj=175 C Gateemitter leakage current IGES VCE=V,VGE=2V na Transconductance gfs VCE=2V,IC=5.A 3. S V µa 4 Rev.2.2,214312

5 Highspeedswitchingseriesthirdgeneration ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 296 Output capacitance Coes VCE=25V,VGE=V,f=1MHz 116 Reverse transfer capacitance Cres 96 Gate charge Internal emitter inductance measured 5mm (.197 in.) from case Short circuit collector current Max. short circuits Time between short circuits: 1.s QG VCC=48V,IC=5.A, VGE=15V pf 315. nc LE 13. nh IC(SC) VGE=15.V,VCC 4V, tsc 5µs Tvj=15 C 33 A SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=25 C Turnon delay time td(on) Tvj=25 C, 23 ns Rise time VCC=4V,IC=5.A, tr 37 ns VGE=./15.V, Turnoff delay time td(off) rg=7.ω,lσ=9nh, 235 ns Fall time Cσ=6pF tf 24 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 1.45 mj Turnoff energy diode (IKW5N6H3) reverse Eoff.91 mj recovery. Total switching energy Ets 2.36 mj SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=175 C Turnon delay time td(on) Tvj=175 C, 23 ns Rise time VCC=4V,IC=5.A, tr 31 ns VGE=./15.V, Turnoff delay time td(off) rg=7.ω,lσ=9nh, 273 ns Fall time Cσ=6pF tf 24 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and 1.42 mj Turnoff energy diode (IKW5N6H3) reverse Eoff 1.13 mj recovery. Total switching energy Ets 2.55 mj 5 Rev.2.2,214312

6 Highspeedswitchingseriesthirdgeneration IC,COLLECTORCURRENT[A] TC=8 TC=1 IC,COLLECTORCURRENT[A] 1 tp=1µs µs 5µs µs 2µs 5µs DC 2 TC=8 TC=1 1 f,switchingfrequency[khz] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj 175 C,D=.5,VCE=4V,VGE=15/V, rg=7ω).1 1 VCE,COLLECTOREMITTERVOLTAGE[V] Figure 2. Forwardbiassafeoperatingarea (D=,TC=25 C,Tj 175 C;VGE=15V) Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] TC,CASETEMPERATURE[ C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj 175 C) TC,CASETEMPERATURE[ C] Figure 4. Collectorcurrentasafunctionofcase temperature (VGE 15V,Tj 175 C) 6 Rev.2.2,214312

7 Highspeedswitchingseriesthirdgeneration VGE=2V 175 VGE=2V 17V 17V IC,COLLECTORCURRENT[A] V 13V 11V 9V 7V 5V IC,COLLECTORCURRENT[A] V 13V 11V 9V 7V 5V VCE,COLLECTOREMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25 C) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 6. Typicaloutputcharacteristic (Tj=175 C) IC,COLLECTORCURRENT[A] Tj=25 C Tj=175 C VCE(sat),COLLECTOREMITTERSATURATION[V] IC=25A IC=5A IC=A VGE,GATEEMITTERVOLTAGE[V] Figure 7. Typicaltransfercharacteristic (VCE=2V) Tj,JUNCTIONTEMPERATURE[ C] Figure 8. Typicalcollectoremittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 7 Rev.2.2,214312

8 td(off) tf td(on) tr td(off) tf td(on) tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] High speed switching series third generation IC, COLLECTOR CURRENT [A] rg, GATE RESISTOR [Ω] Figure 9. Typical switching times as a function of collector current (ind. load, Tj=175 C, VCE=4V, VGE=15/V, rg=7ω, test circuit in Fig. E) Figure. Typical switching times as a function of gate resistor (ind. load, Tj=175 C, VCE=4V, VGE=15/V, IC=5A, test circuit in Fig. E) VGE(th), GATEEMITTER THRESHOLD VOLTAGE [V] t, SWITCHING TIMES [ns] 6. td(off) tf td(on) tr Tj, JUNCTION TEMPERATURE [ C] typ. min. max Tj, JUNCTION TEMPERATURE [ C] Figure 11. Typical switching times as a function of junction temperature (ind. load, VCE=4V, VGE=15/V, IC=5A, rg=7ω, test circuit in Fig. E) Figure 12. Gateemitter threshold voltage as a function of junction temperature (IC=,8mA) 8 Rev. 2.2,

9 High speed switching series third generation 8 5 Eoff Eon Ets E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] 7 Eoff Eon Ets IC, COLLECTOR CURRENT [A] Figure 13. Typical switching energy losses as a function of collector current (ind. load, Tj=175 C, VCE=4V, VGE=15/V, rg=7ω, test circuit in Fig. E) Eoff Eon Ets E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] 14 Figure 14. Typical switching energy losses as a function of gate resistor (ind. load, Tj=175 C, VCE=4V, VGE=15/V, IC=5A, test circuit in Fig. E) rg, GATE RESISTOR [Ω] Eoff Eon Ets Tj, JUNCTION TEMPERATURE [ C] VCE, COLLECTOREMITTER VOLTAGE [V] Figure 15. Typical switching energy losses as a function of junction temperature (ind load, VCE=4V, VGE=15/V, IC=5A, rg=7ω, test circuit in Fig. E) Figure 16. Typical switching energy losses as a function of collector emitter voltage (ind. load, Tj=175 C, VGE=15/V, IC=5A, rg=7ω, test circuit in Fig. E) 9 Rev. 2.2,

10 High speed switching series third generation 16 12V 48V 12 C, CAPACITANCE [pf] VGE, GATEEMITTER VOLTAGE [V] Cies Coes Cres QGE, GATE CHARGE [nc] Figure 17. Typical gate charge (IC=5A) 3 15 tsc, SHORT CIRCUIT WITHSTAND TIME [µs] IC(SC), SHORT CIRCUIT COLLECTOR CURRENT [A] 2 Figure 18. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=1mhz) VCE, COLLECTOREMITTER VOLTAGE [V] VGE, GATEEMITTER VOLTAGE [V] VGE, GATEEMITTER VOLTAGE [V] Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 4V, start attj=25 C) Figure 2. Short circuit withstand time as a function of gateemitter voltage (VCE 4V, start at Tj 15 C) Rev. 2.2,

11 ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W] High speed switching series third generation D= single pulse.1 i: ri[k/w]: 7.E τi[s]: 4.4E5 1.E4 7.2E4 8.3E E6 1E5 1E tp, PULSE WIDTH [s] Figure 21. IGBT transient thermal impedance (D=tp/T) 11 Rev. 2.2,

12 High speed switching series third generation PGTO Rev. 2.2,

13 High speed switching series third generation vge(t) 9% VGE a a b b t ic(t) 9% IC 9% IC % IC % IC t vce(t) t td(off) tf td(on) t tr vge(t) 9% VGE % VGE t ic(t) 2% IC t vce(t) 2% VCE t1 t2 t3 t4 t 13 Rev. 2.2,

14 High speed switching series third generation Revision History Revision: , Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) Preliminary datasheet New value ICES max limit at 175 C Max ratings Vce, Tvj 25 C We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG Munich, Germany München, Germany 214 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 14 Rev. 2.2,