NTP75N06, NTB75N06, NTBV75N06. Power MOSFET 75 Amps, 60 Volts, N Channel TO 220 and D 2 PAK. 75 AMPERES, 60 VOLTS R DS(on) = 9.5 m

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1 NTP75N6, NTB75N6, NTBV75N6 Power MOSFET 75 Amps, 6 Volts, NChannel TO and D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features These Devices are PbFree and are RoHS Compliant NTBV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINGS (T J = 5 C unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage V DSS 6 DraintoGate Voltage (R GS = M ) V DGR 6 GatetoSource Voltage Continuous NonRepetitive (t p ms) Drain Current T A = 5 C T A = C Single Pulse (t p s) Total Power T A = 5 C Derate above 5 C Total Power T A = 5 C V GS V GS I D I D I DM P D.. Operating and Storage Temperature Range T J, T stg 55 to +75 Single Pulse DraintoSource Avalanche Energy Starting T J = 5 C (V DD = 5, V GS =, L =. mh I L(pk) = 75 A, V DS = 6 ) Thermal Resistance JunctiontoCase JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, /8 from case for seconds Adc Apk W W/ C W C E AS 8 mj R JC.7 R JA 6.5 C/W T L 6 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 75 AMPERES, 6 VOLTS R DS(on) = 9.5 m G 75N6 A Y WW NChannel D S TO CASE A STYLE 5 D PAK CASE 8B STYLE Gate MARKING DIAGRAMS Gate Drain 75N6 AYWW = Device Code = Assembly Location = Year = Work Week Source Drain Drain 75N6 AYWW Drain Source ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, December, Rev. Publication Order Number: NTP75N6/D

2 ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note ) (V GS =, I D = 5 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V DS = 6, V GS = ) (V DS = 6, V GS =, T J = 5 C) V (BR)DSS 6 GateBody Leakage Current (V GS = ±, V DS = ) I GSS ± nadc I DSS 7 7 mv/ C Adc ON CHARACTERISTICS (Note ) Gate Threshold Voltage (Note ) (V DS = V GS, I D = 5 Adc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note ) (V GS =, I D = 7.5 Adc) V GS(th) R DS(on) mv/ C m Static DraintoSource OnVoltage (Note ) (V GS =, I D = 75 Adc) (V GS =, I D = 7.5 Adc, T J = 5 C) V DS(on) Forward Transconductance (Note ) (V DS = 5, I D = 7.5 Adc) g FS. mhos DYNAMIC CHARACTERISTICS Input Capacitance C iss 5 pf Output Capacitance (V DS = 5, V GS =, f =. MHz) C oss Transfer Capacitance C rss SWITCHING CHARACTERISTICS (Note ) TurnOn Delay Time Rise Time (V DD =, I D = 75 Adc, t r 55 TurnOff Delay Time V GS =, R G = 9. ) (Note ) t d(off) t d(on) 6 5 ns Fall Time t f Gate Charge (V DS = 8, I D = 75 Adc, V GS = ) (Note ) Q T 9 nc Q Q SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I S = 75 Adc, V GS = ) (Note ) (I S = 75 Adc, V GS =, T J = 5 C) V SD..9. Reverse Recovery Time (I S = 75 Adc, V GS =, di S /dt = A/ s) (Note ) t rr 77 ns t a 9 t b 8 Reverse Recovery Stored Charge Q RR.6 C. Pulse Test: Pulse Width s, Duty Cycle %.. Switching characteristics are independent of operating junction temperatures.

3 6 8 6 V GS = V V GS = 6.5 V V GS = 6 V V GS = 7 V V GS = 8 V V GS = 9 V V GS = 5.5 V V GS = 5 V V GS =.5 V V DS, DRAINTOSOURCE VOLTAGE (V) 6 V DS V 8 6 T J = 5 C T J = C T J = 55 C V GS, GATETOSOURCE VOLTAGE (V) Figure. OnRegion Characteristics Figure. Transfer Characteristics R DS(on), DRAINTOSOURCE RESISTANCE ( ).5 V GS = V T J = C...9 T J = 5 C.7 T J = 55 C.5 R DS(on), DRAINTOSOURCE RESISTANCE ( ) V GS = 5 V. T J = C..9 T J = 5 C.7 T J = 55 C.5 R DS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) Figure. OnResistance vs. GatetoSource Voltage I D = 7.5 A V GS = V T J, JUNCTION TEMPERATURE ( C) 5 Figure 5. OnResistance Variation with Temperature 75 I DSS, LEAKAGE (na) Figure. OnResistance vs. Drain Current and Gate Voltage V GS = V T J = 5 C T J = 5 C T J = C 5 6 V DS, DRAINTOSOURCE VOLTAGE (V) Figure 6. DraintoSource Leakage Current vs. Voltage

4 C, CAPACITANCE (pf) 8 6 V DS = V V GS = V T J = 5 C C iss C rss C iss C oss C rss V GS, GATETOSOURCE VOLTAGE (V) 5 V GS V DS GATETOSOURCE OR DRAINTOSOURCE (V) Q g, TOTAL GATE CHARGE (nc) 8 6 Q Q Q T V GS I D = 75 A T J = 5 C Figure 7. Capacitance Variation Figure 8. GatetoSource and DraintoSource Voltage vs. Total Charge t, TIME (ns) t f t r t d(off) t d(on) V DS = V I D = 75 A V GS = 5 V I S, SOURCE CURRENT (AMPS) V GS = V T J = 5 C R G, GATE RESISTANCE ( ) V SD, SOURCETODRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variations vs. Gate Resistance Figure. Diode Forward Voltage vs. Current V GS = V SINGLE PULSE T C = 5 C s ms ms dc V DS, DRAINTOSOURCE VOLTAGE (V) s E AS, SINGLE PULSE DRAINTOSOURCE AVALANCHE ENERGY (mj) R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT I D = 75 A T J, STARTING JUNCTION TEMPERATURE ( C) Figure. Maximum Rated Forward Biased Safe Operating Area Figure. Maximum Avalanche Energy vs. Starting Junction Temperature

5 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED). D = SINGLE PULSE.... P (pk). t, TIME ( s) Figure. Thermal Response t t DUTY CYCLE, D = t /t. R JC (t) = r(t) R JC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T C = P (pk) R JC (t). ORDERING INFORMATION NTP75N6G Device Package Shipping TO (PbFree) 5 Units/Rail NTB75N6G NTB75N6TG D PAK (PbFree) D PAK (PbFree) 5 Units/Rail 8 Tape & Reel NTBV75N6TG* D PAK (PbFree) 8 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *NTBV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable. 5

6 PACKAGE DIMENSIONS TO CASE A9 ISSUE AG H Q Z L V G B N D A K F T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q...5. R S T U V Z STYLE 5: PIN. GATE. DRAIN. SOURCE. DRAIN 6

7 PACKAGE DIMENSIONS D PAK CASE 8B ISSUE K T SEATING PLANE B G S D PL. (.5) M T VARIABLE CONFIGURATION ZONE B M K C E V W A W J H R N STYLE : PIN. GATE. DRAIN. SOURCE. DRAIN U NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH.. 8B THRU 8B OBSOLETE, NEW STANDARD 8B. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G. BSC.5 BSC H J K L M N.97 REF 5. REF P.79 REF. REF R.9 REF.99 REF S V P L L L M M M F F F VIEW WW VIEW WW VIEW WW SOLDERING FOOTPRINT* X PITCH X.5 DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7

8 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 87 USA Phone: or 886 Toll Free USA/Canada Fax: or 8867 Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NTP75N6/D