Automotive-grade P-channel -30 V, Ω typ., -12 A STripFET H6 Power MOSFET in a DPAK package. Features. Description. AM11258v1

Transcription

1 STD28P3LLH6AG Automotive-grade P-channel -30 V, Ω typ., -12 A STripFET H6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STD28P3LLH6AG -30V 0.030Ω -12A 33W Figure 1: Internal schematic diagram D(2, TAB) Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Logic level Applications Switching applications G(1) S(3) AM11258v1 Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R DS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STD28P3LLH6AG 28P3LLH6 DPAK Tape and reel September 2015 DocID Rev 1 1/15 This is information on a product in full production.

2 Contents STD28P3LLH6AG Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information DPAK (TO-252) type A package information DPAK (TO-252) packing information Revision history /15 DocID Rev 1

3 STD28P3LLH6AG Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage -30 V V GS Gate-source voltage ±18 V Drain current (continuous) at T (1) case = 25 C I D Drain current (continuous) at T case = 100 C I DM (2) -12 A Drain current (pulsed) -48 A P TOT Total dissipation at T case = 25 C 33 W E AS (3) Single pulse avalanche energy 210 mj T stg Storage temperature 55 to 150 C T j Maximum operating junction temperature 150 C Notes: (1) Limited by wire bonding (2) Pulse width is limited by safe operating area. (3) starting Tj = 25 C, I AS =-6 A, V DD = -25 V, V gs = -10 V. Table 3: Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case 3.75 R thj-pcb (1) Thermal resistance junction-pcb 50 Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board C/W DocID Rev 1 3/15

4 Electrical characteristics STD28P3LLH6AG 2 Electrical characteristics (T case = 25 C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current V GS = 0 V, I D = -250 µa -30 V V GS = 0 V, V DS = -30 V -1 V GS = 0 V, V DS = -30 V, T case = 125 C -10 V DS = 0 V, V GS = ±18 V ±100 na V GS(th) Gate threshold voltage V DS = V GS, I D = -250 µa V R DS(on) Static drain-source onresistance V GS = -10 V, I D = -6 A Ω V GS = -4.5 V, I D = -6 A Ω µa Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss C oss C rss Q g Q gs Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge V DS = -25 V, f = 1 MHz, V GS = 0 V V DD = -15 V, I D = -12 A, V GS = -10 V (see Figure 14: "Gate charge test circuit") Q gd Gate-drain charge pf nc Table 6: Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time t V DD = -15 V, I D = -6 A R G = 4.7 Ω, r Rise time V GS = -10 V (see Figure 13: "Switching Turn-off delay times test circuit for resistive load" ) time t d(on) t d(off) t f Fall time ns 4/15 DocID Rev 1

5 STD28P3LLH6AG Table 7: Source-drain diode Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5% A A V GS = 0 V, I SD = -12 A V I SD = -12 A, di/dt = 100 A/µs, V DD = -24 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") ns nc A DocID Rev 1 5/15

6 Electrical characteristics 2.2 Electrical characteristics (curves) Figure 2: Safe operating area STD28P3LLH6AG Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance 6/15 DocID Rev 1

7 STD28P3LLH6AG Figure 8: Capacitance variations Electrical characteristics Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics For the P-channel Power MOSFET, current and voltage polarities are reversed. DocID Rev 1 7/15

8 Test circuits STD28P3LLH6AG 3 Test circuits Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times 8/15 DocID Rev 1

9 STD28P3LLH6AG Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 DPAK (TO-252) type A package information Figure 16: DPAK (TO-252) type A package outline DocID Rev 1 9/15

10 Package information STD28P3LLH6AG Table 8: DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A A A b b c c D D E E e e H L (L1) L L R 0.20 V /15 DocID Rev 1

11 STD28P3LLH6AG Package information Figure 17: DPAK (TO-252) recommended footprint (dimensions are in mm) DocID Rev 1 11/15

12 Package information 4.2 DPAK (TO-252) packing information Figure 18: DPAK (TO-252) tape outline STD28P3LLH6AG 12/15 DocID Rev 1

13 STD28P3LLH6AG Figure 19: DPAK (TO-252) reel outline Package information Table 9: DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 B C D D 20.2 D1 1.5 G E N 50 F T 22.4 K P Base qty P Bulk qty P R 40 T W DocID Rev 1 13/15

14 Revision history STD28P3LLH6AG 5 Revision history Table 10: Document revision history Date Revision Changes 21-Sep First release. 14/15 DocID Rev 1

15 STD28P3LLH6AG IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DocID Rev 1 15/15

16 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: STMicroelectronics: STD28P3LLH6AG