P-CHANNEL J-FET. 2N5114UB thru 2N5116UB. UB Package. Also available in: TO-18 package (leaded) 2N5114 2N5116

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1 thru Available on commercial versions P-CHANNEL J-FET DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Screening in reference to MIL-PRF available Important: For the latest information, visit our website FEATURES Surface mount equivalent to JEDEC registered 2N5114 thru 2N5116 series. Low-profile ceramic surface mount package. Screening in reference to MIL-PRF is available. (See part nomenclature.) RoHS compliant versions available (commercial grade only). UB Package Low-profile UB package. Lightweight. APPLICATIONS / BENEFITS Also available in: TO-18 package (leaded) 2N5114 2N5116 MAXIMUM T C = +25 o C unless otherwise noted. Parameters/Test Conditions Symbol Value Unit Junction and Storage Temperature T J and T STG -65 to +200 o C Gate-Source Voltage (1) V GS 30 V Drain-Source Voltage V DS 30 V Drain-Gate Voltage (1) V DG 30 V Gate Current I G 50 ma Steady-State Power T A = +25 o C (2) P D W Notes: 1. Symmetrical geometry allows operation of those units with source / drain leads interchanged. 2. Derate linearly 3.0 mw/ C for T A > +25 C. MSC Lawrence 6 Lake Street, Lawrence, MA (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS , Rev. 1 (111983) 2011 Microsemi Corporation Page 1 of 5

2 thru MECHANICAL and PACKAGING CASE: Ceramic. TERMINALS: Gold Plating over Nickel underplate. RoHS compliant Matte/Tin available on commercial grade only. MARKING: Part number, date code, manufacturer s ID. TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities. WEIGHT: < 0.04 Grams. See Package Dimensions on last page. PART NOMENCLATURE MX 2N5114 UB (e3) Reliability Level MQ (reference JAN) MX (reference JANTX) MV (reference JANTXV) Blank = Commercial JEDEC type number (see Electrical Characteristics table) RoHS Compliance e3 = RoHS Compliant (available on commercial grade only) Blank = non-rohs Compliant Surface Mount Package T4-LDS , Rev. 1 (111983) 2011 Microsemi Corporation Page 2 of 5

3 thru ELECTRICAL T A = +25 o C unless otherwise noted. Gate-Source Breakdown Voltage V DS = 0, I G = 1.0 μa V (BR)GSS 30 V Drain-Source On State Voltage V GS = 0 V, I D = -15 ma V GS = 0 V, I D = -7.0 ma V GS = 0 V, I D = -3.0 ma V DS(on) Gate Reverse Current V DS = 0, V GS = 20 V I GSS 500 pa Drain Current Cutoff V GS = 12 V, V DS = -15 V V GS = 7.0 V, V DS = -15 V V GS = 5.0 V, V DS = -15 V Zero Gate Voltage Drain Current V GS = 0, V DS = -18V V GS = 0, V DS = -15V V GS = 0, V DS = -15V Gate-Source Cutoff I D(off) I DSS V GS(off) V pa ma V DYNAMIC CHARACTERISTICS Small-Signal Drain-Source On State Resistance V GS = 0, I D = -1.0 ma Small-Signal Drain-Source On State Resistance V GS = 0, I D = 0; f = 1 khz Small-Signal, Common-Source Short-Circuit Reverse Transfer Capacitance V GS = 12 V, V DS = 0 V GS = 7.0 V, V DS = 0 V GS = 5.0 V, V DS = 0 Small-Signal, Common-Source Short-Circuit Input Capacitance V GS = 0, V DS = -15 V, f = 1.0 MHz, r ds(on) r ds(on) C rss 7.0 pf C iss Ω Ω pf T4-LDS , Rev. 1 (111983) 2011 Microsemi Corporation Page 3 of 5

4 thru ELECTRICAL T A = +25 o C unless otherwise noted. (continued) SWITCHING CHARACTERISTICS Turn-On Delay Time Td(on) Rise Time Turn-Off Delay Time tr Td(off) T4-LDS , Rev. 1 (111983) 2011 Microsemi Corporation Page 4 of 5

5 thru PACKAGE DIMENSIONS Dimensions Dimensions Symbol inch millimeters Note Symbol inch millimeters Min Max Min Max Min Max Min Max BH LS BL LS BW LW CL r CW r LL r LL Note NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas (tungsten with gold plating 60 micro inches minimum over 80 micro inches minimum nickel). 4. Pad 1 = drain, Pad 2 = source, Pad 3 = gate, Pad 4 = shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS , Rev. 1 (111983) 2011 Microsemi Corporation Page 5 of 5

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