STT3PF30L P-CHANNEL 30V Ω - 3A SOT23-6L STripFET II POWER MOSFET

Transcription

1 P-CHANNEL 30V Ω - 3A SOT23-6L STripFET II POWER MOSFET STT3PF30L 30 V <0.165 Ω 3 A TYPICAL R DS (on) = 0.14 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size " strip-based process. The resulting traistor shows extremely high packing deity for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC EQUIPMENT POWER MANAGEMENT IN PORTABLE/DESKTOP PCs CELLULAR MARKING STA3 TYPE V DSS R DS(on) I D SOT23-6L ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 30 V V DGR Drain-gate Voltage (R GS = 20 kω) 30 V V GS Gate- source Voltage ± 16 V I D Drain Current (continuous) at T C = 25 C 2.4 A I D Drain Current (continuous) at T C = 100 C 1.5 A I DM ( ) Drain Current (pulsed) 10 A P tot Total Dissipation at T C = 25 C 1.6 W ( ) Pulse width limited by safe operating area. INTERNAL SCHEMATIC DIAGRAM Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed September /8

2 THERMAL DATA Rthj-amb Rthj-amb T j T stg (*)Thermal Resistance Junction-ambient (**)Thermal Resistance Junction-ambient Max. Operating Junction Temperature Storage Temperature Max Max to to 150 C/W C/W C C (*) Mounted on a 1 inch pad of 2 oz. Cu in FR-4 board (**) Mounted on a minimum pad of 2 oz. Cu in FR-4 board ELECTRICAL CHARACTERISTICS (T case = 25 C unless otherwise specified) OFF V (BR)DSS Drain-source Breakdown Voltage I D = 250 µa, V GS = 0 30 V ON (*) I DSS I GSS DYNAMIC Zero Gate Voltage Drain Current (V GS = 0) Gate-body Leakage Current (V DS = 0) V DS = Max Rating V DS = Max Rating T C = 125 C 1 10 V GS = ± 16 V ±100 na V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µa V R DS(on) Static Drain-source On Resistance V GS = 10 V V GS = 4.5 V I D = 1.5 A I D = 1.5 A g fs (*) Forward Traconductance V DS =25 V I D = 1.5 A 4 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Trafer Capacitance V DS = 25V f = 1 MHz, V GS = µa µa Ω Ω pf pf pf 2/8

3 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON t d(on) t r Turn-on Delay Time Rise Time V DD = 15 V I D = 1.5 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, Figure 1) Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 24V I D = 3A V GS =4.5V (see test circuit, Figure 2) nc nc nc SWITCHING OFF t d(off) t f Turn-off Delay Time Fall Time SOURCE DRAIN DIODE (*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( )Pulse width limited by safe operating area. V DD = 15 V I D = 1.5 A R G = 4.7Ω, V GS = 4.5 V (Resistive Load, Figure 1) I SD I SDM ( ) Source-drain Current Source-drain Current (pulsed) V SD (*) Forward On Voltage I SD = 3 A V GS = V t rr Q rr I RRM Safe Operating Area Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3 A di/dt = 100A/µs V DD = 15 V T j = 150 C (see test circuit, Figure 3) Thermal Impedance A A nc A 3/8

4 Output Characteristics Trafer Characteristics Traconductance Gate Charge vs Gate-source Voltage Static Drain-source On Resistance Capacitance Variatio 4/8

5 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8

6 Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8

7 SOT23-6L MECHANICAL DATA DIM. mm MIN. TYP. MAX. MIN. TYP. MAX. mils A A A b C D E E L e e A A2 A1 b e e1 D c L E E1 7/8

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