Automotive P-Channel 40 V (D-S) 175 C MOSFET

Transcription

1 Automotive P-Channel 4 V (-S) 75 C MOSFET SQ44EY PROUCT SUMMARY V S (V) - 4 R S(on) ( ) at V GS = - V.4 R S(on) ( ) at V GS = V.23 I (A) Configuration Single FEATURES Halogen-free According to IEC efinition TrenchFET Power MOSFET AEC-Q Qualified % R g and UIS Tested Compliant to RoHS irective 22/95/EC SO-8 S S S G S 3 6 G 4 5 Top View P-Channel MOSFET ORERING INFORMATION Package Lead (Pb)-free and Halogen-free SO-8 SQ44EY-T-GE3 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source Voltage V S - 4 Gate-Source Voltage V GS ± 2 V T Continuous rain Current a C = 25 C I T C = 25 C - Continuous Source Current (iode Conduction) a I S A Pulsed rain Current b I M - 69 Single Pulse Avalanche Current I AS - 3 L =. mh Single Pulse Avalanche Energy E AS 45 mj T Maximum Power issipation b C = 25 C 7.4 P T C = 25 C 2.4 W Operating Junction and Storage Temperature Range T J, T stg - 55 to + 75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c R thja 85 Junction-to-Foot (rain) R thjf 2 C/W Notes a. Package limited. b. Pulse test; pulse width 3 μs, duty cycle 2 %. c. When mounted on " square PCB (FR-4 material). S-29 Rev. B, 3-Oct- ocument Number: 659

2 SQ44EY SPECIFICATIONS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source Breakdown Voltage V S V GS =, I = - 25 μa V Gate-Source Threshold Voltage V GS(th) V S = V GS, I = - 25 μa Gate-Source Leakage I GSS V S = V, V GS = ± 2 V - - ± na Zero Gate Voltage rain Current I SS V GS = V V S = - 4 V, T J = 25 C μa V GS = V V S = - 4 V V GS = V V S = - 4 V, T J = 75 C On-State rain Current a I (on) V GS = - V V S - 5 V A Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = - V I = -.5 A -..4 rain-source On-State Resistance a R S(on) V GS = - V I = -.5 A, T J = 25 C V GS = - V I = -.5 A, T J = 75 C V GS = V I = A Forward Transconductance a g fs V S = - 5 V, I = -.5 A S ynamic b Input Capacitance C iss Output Capacitance C oss V GS = V V S = - 2 V, f = MHz pf Reverse Transfer Capacitance C rss Total Gate Charge c Q g Gate-Source Charge c Q gs V GS = - V V S = - 2 V, I = -.5 A - - nc Gate-rain Charge c Q gd Gate Resistance R g f = MHz Turn-On elay Time c t d(on) Rise Time c t r V = - 5 V, R L = Turn-Off elay Time c t d(off) I - A, V GEN = V, R g = ns Fall Time c t f Source-rain iode Ratings and Characteristics b Pulsed Current a I SM A Forward Voltage V S I F = A, V GS = V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S-29 Rev. B, 3-Oct- 2 ocument Number: 659

3 SQ44EY TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) V GS =Vthru5V 4 I - rain Current (A) 3 2 V GS =4V I - rain Current (A) 3 2 V GS =3V V S - rain-to-source Voltage (V) Output Characteristics T C = 25 C T C = 25 C T C = - 55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics 5.5 g fs - Transconductance (S) T C = - 55 C T C = 25 C T C = 25 C R S(on) - On-Resistance (Ω) V GS =4.5V V GS =V I - rain Current (A) Transconductance I - rain Current (A) On-Resistance vs. rain Current C - Capacitance (pf) C iss C oss 5 C rss V S - rain-to-source Voltage (V) Capacitance V GS - Gate-to-Source Voltage (V) I =.5 A 8 V S = 2 V Q g - Total Gate Charge (nc) Gate Charge S-29 Rev. B, 3-Oct- 3 ocument Number: 659

4 SQ44EY TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) On-Resistance (Normalized) R S(on) I =.5 A V GS =V BVSX I =ma T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature T J - Junction Temperature ( C) Breakdown Voltage vs. Junction Temperature. - Source Current (A) I S.. T J = 5 C T J = 25 C - On-Resistance (Ω) R S(on) T J = 25 C V S - Source-to-rain Voltage (V) Source rain iode Forward Voltage T J = 25 C V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage. V GS(th) Variance (V) I = 25 μa I =ma T J - Temperature ( C) Threshold Voltage S-29 Rev. B, 3-Oct- 4 ocument Number: 659

5 SQ44EY THERMAL RATINGS (T A = 25 C, unless otherwise noted) Limited by R * S(on) I M Limited µs I - rain Current (A). T C = 25 C Single Pulse BVSS Limited ms ms ms s s, C... V S - rain-to-source Voltage (V) * V GS > minimum V GS at which R S(on) is specified Safe Operating Area uty Cycle =.5 Normalized Effective Transient Thermal Impedance t t 2 t. uty Cycle, = t 2 2. Per Unit Base =R thja = 84 C/W Single Pulse 3. T JM -T A =P M Z (t) thja 4. Surface Mounted Square Wave Pulse uration (s) Notes: P M Normalized Thermal Transient Impedance, Junction-to-Ambient S-29 Rev. B, 3-Oct- 5 ocument Number: 659

6 SQ44EY THERMAL RATINGS (T A = 25 C, unless otherwise noted) uty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.62", double sided with 2 oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S-29 Rev. B, 3-Oct- 6 ocument Number: 659

7 Ordering Information SO-8 Ordering codes for the SQ rugged series power MOSFETs in the SO-8 package: ATASHEET PART NUMBER OL ORERING COE a NEW ORERING COE SQ45EY - SQ45EY-T_GE3 SQ45EY SQ45EY-T-GE3 SQ45EY-T_GE3 SQ482EY SQ482EY-T-GE3 SQ482EY-T_GE3 SQ484EY SQ484EY-T-GE3 SQ484EY-T_GE3 SQ4282EY SQ4282EY-T-GE3 SQ4282EY-T_GE3 SQ4284EY SQ4284EY-T-GE3 SQ4284EY-T_GE3 SQ44EY SQ44EY-T-GE3 SQ44EY-T_GE3 SQ44EY SQ44EY-T-GE3 SQ44EY-T_GE3 SQ4425EY SQ4425EY-T-GE3 SQ4425EY-T_GE3 SQ443EY SQ443EY-T-GE3 SQ443EY-T_GE3 SQ4435EY SQ4435EY-T-GE3 SQ4435EY-T_GE3 SQ447EY SQ447EY-T-GE3 SQ447EY-T_GE3 SQ4483BEEY SQ4483BEEY-T-GE3 SQ4483BEEY-T_GE3 SQ4483EY - SQ4483EY-T_GE3 SQ4532AEY - SQ4532AEY-T_GE3 SQ484EY SQ484EY-T-GE3 SQ484EY-T_GE3 SQ485EY SQ485EY-T-GE3 SQ485EY-T_GE3 SQ497EY SQ497EY-T-GE3 SQ497EY-T_GE3 SQ492EY SQ492EY-T-GE3 SQ492EY-T_GE3 SQ4937EY SQ4937EY-T-GE3 SQ4937EY-T_GE3 SQ494AEY SQ494AEY-T-GE3 SQ494AEY-T_GE3 SQ4946AEY SQ4946AEY-T-GE3 SQ4946AEY-T_GE3 SQ4949EY SQ4949EY-T-GE3 SQ4949EY-T_GE3 SQ496EY SQ496EY-T-GE3 SQ496EY-T_GE3 SQ947EY SQ947EY-T-GE3 SQ947EY-T_GE3 SQ9945BEY SQ9945BEY-T-GE3 SQ9945BEY-T_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 2-Oct-5 ocument Number: For technical questions, contact: automostechsupport@vishay.com

8 Package Information SOIC (NARROW): 8-LEA JEEC Part Number: MS E H S A.25 mm (Gage Plane) h x 45 C All Leads e B A L q. mm.4" MILLIMETERS INCHES IM Min Max Min Max A A B C E e.27 BSC.5 BSC H h L q 8 8 S ECN: C-6527-Rev. I, -Sep-6 WG: 5498 ocument Number: 792 -Sep-6

9 Application Note 826 RECOMMENE MINIMUM PAS FOR SO-8.72 (4.369).28 (.7) APPLICATION NOTE.47 (.94).246 (6.248).52 (3.86).22 (.559).5 (.27) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index ocument Number: Revision: 2-Jan-8

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