BYT HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS I F(AV) 1A 400 V T j (max) 150 C

Transcription

1 BYT1-4 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS I F(AV) V RRM 1A 4 V T j (max) 15 C V F (max) 1.4 V trr (max) 25 ns FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward & reverse recovery times DO-15 BYT1-4 DESCRIPTION The BYT1-4 which is using ST s 4V planar technology, is specially suited for switching mode base drive & transistor circuits. The device, which is available in axial (DO-15) package, is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V RRM Repetive peak reverse voltage 4 V I F (AV) Average forward current TI = 8 C δ =.5 1 A I FSM Surge non repetitive forward current tp = 1ms Sinusoidal 3 A T stg Storage temperature range - 65 to +15 C T j Maximum operating junction temperature 15 C October 21 - Ed: 2A 1/5

2 THERMAL PARAMETERS Symbol Parameter Value Unit R th(j-a) Junction to ambient* 45 C/W * On infinite heatsink with 1mm lead length. STATIC ELECTRICAL CHARACTERISTICS Symbol Parameters Test Conditions Min. Typ. Max. Unit I R * Reverse leakage current T j = 25 C V R =V RRM 2 µa T j = 1 C.1.5 ma V F ** Forward voltage drop T j =25 C I F =1A 1.5 V T j = 1 C 1.4 Pulse test: * tp = 5ms, δ <2% ** tp = 38µs, δ <2% To evaluate the maximum conduction losses use the following equation: 2 P=1.1xI F(AV) +.25 I F (RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit trr Reverse recovery time T j =25 C I F =.5A I R =1A I rr =.25A ns I F =1A di F /dt = - 15A/µs V R = 3V 55 tfr Forward recovery time T j =25 C I F =1A di F /dt = 5A/µs VFR=1.1xV F max 6 ns V FP Forward recovery voltage T j =25 C I F =1A di F /dt = 5A/µs 9.5 V 2/5

3 Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ =.5) PF(av)(W) δ = 5 δ =.1 δ =.2 δ =.5 δ = IF(av)(A) Rth(j-a)=Rth(j-l) T.2 IF(av)(A) δ=tp/t tp Rth(j-a)=1 C/W.4.2 Tamb( C) Fig. 3: Thermal resistance versus lead length. Fig. 4: Relative variation of thermal impedance junction ambient versus pulse duration (printed circuit board epoxy FR4, Lleads = 1mm). Rth( C/W) Rth(j-a) Rth(j-l) Lleads(mm) Zth(j-a)/Rth(j-a) δ =.5 δ =.2 δ =.1 Single pulse T tp(s) δ=tp/t tp 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Fig. 5: Forward voltage drop versus forward current. Fig. 6: Junction capacitance versus reverse voltage applied (typical values). 1 IFM(A) (Typical values) C(pF) F=1MHz Vosc=3mV 1 (Maximum values) (Maximum values) VFM(V) VR(V) /5

4 Fig. 7: Forward recovery time versus dif/dt (9% confidence). Fig. 8. Transient peak forward voltage versus dif/dt (9% confidence). tfr(ns) VFP(V) Fig. 9: Peak reverse recovery current versus dif/dt (9% confidence). Fig. 1: Dynamic parameters versus junction temperature IRM(A) VR=2V % 3 dif/dt=-5a/µs VR=3V 25 Qrr 1.5 trr 2 IRM Tj( C) Fig. 11: Non repetitive surge peak current versus number of cycles IFSM(A) Tj initial=25 C Number of cycles /5

5 PACKAGE MECHANICAL DATA DO-15 C A C D B DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A B C D Ordering code Marking Package Weight Base qty Delivery mode BYT1-4 BYT1-4 DO-15.4 g 1 Ammopack BYT1-4RL BYT1-4 DO-15.4 g 6 Tape & Reel Cooling method: by conduction (method A) Epoxy meets UL 94,V Bending method: Application note AN1471 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 21 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. 5/5