2N3055A MJ MJ2955A MJ15016 Unit SEMICONDUCTOR TECHNICAL DATA

Transcription

1 SEMICONDUCTOR TECHNICAL DATA Order this document by NA/D... PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters, inverters, or for inductive loads requiring higher safe operating area than the N and MJ9. Current Gain Bandwidth IC =. Adc ft =.8 MHz (Min) NPN =. MHz (Min) PNP Safe Operating Area Rated to 6 V and V, Respectively ÎÎ *MAXIMUM RATINGS ÎÎ NA MJ Rating Î Symbol ÎÎ MJ9A MJ6 Unit Collector Emitter Voltage Î VCEO 6 ÎÎÎ Vdc Collector Base Voltage VCBO ÎÎÎ Vdc Collector Emitter Voltage Base VCEV ÎÎÎ ÎÎ Vdc Reversed Biased Emitter Base Voltage Î VEBO ÎÎÎ 7. ÎÎÎ Vdc Collector Current Continuous Î IC ÎÎÎ ÎÎÎ Adc Base Current IB ÎÎÎ 7. ÎÎÎ Adc Total Device TC = C PD 8 ÎÎÎ Watts ÎÎ Derate above C.6. W/ C Operating and Storage Junction Î TJ, Tstg ÎÎÎ 6 to + ÎÎÎ C ÎÎ ÎÎ Temperature Range THERMAL CHARACTERISTICS Characteristic Î Symbol Max Max ÎÎÎ Unit Thermal Resistance, Junction to Case..98 ÎÎÎ C/W * Indicates JEDEC Registered Data. (NA) RθJC *Motorola Preferred Device AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 6, VOLTS, 8 WATTS CASE 7 TO 4AA (TO ) P D(AV), AVERAGE POWER DISSIPATION (W) NA MJ9A MJ MJ6 7 7 TC, CASE TEMPERATURE ( C) Figure. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV Motorola, Inc. 99 Motorola Bipolar Power Transistor Device Data

2 ÎÎ ELECTRICAL CHARACTERISTICS (TC = C unless otherwise noted) ÎÎ Characteristic Symbol Min Max Unit ÎÎ OFF CHARACTERISTICS () ÎÎ *Collector Emitter Sustaining Voltage NA, MJ9A (IC =, IB = ) MJ, MJ6Î VCEO(sus) 6 Vdc ÎÎ Collector Cutoff Current ICEO (VCE = Vdc, VBE(off) = Vdc) NA, MJ9A.7 (VCE = 6 Vdc, VBE(off) = Vdc) MJ, MJ6 *Collector Cutoff Current NA, MJ9A ICEV (VCEV = Rated Value, VBE(off) =. Vdc) MJ, MJ6.. Collector Cutoff Current ICEV (VCEV = Rated Value, VBE(off) =. Vdc, NA, MJ9A TC = C) MJ, MJ6 6. Emitter Cutoff Current NA, MJ9A IEBO (VEB = 7. Vdc, IC = ) MJ, MJ6.. ÎÎ *SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Î IS/b Adc (t =. s non repetitive) NA, MJ9A.9 (VCE = 6 Vdc) MJ, MJ6. ÎÎ *ON CHARACTERISTICS () DC Current Gain ÎÎÎ hfe ÎÎÎ (IC = 4. Adc, VCE =. Vdc) 7 (IC = 4. Adc, VCE = 4. Vdc) (IC = Adc, VCE = 4. Vdc). 7 Collector Emitter Saturation Voltage VCE(sat) Vdc (IC = 4. Adc, IB = 4 ). (IC = Adc, IB =. Adc) (IC = Adc, IB = 7. Adc).. ÎÎ Base Emitter On Voltage VBE(on).7.8 Vdc ÎÎ ÎÎ (IC = 4. Adc, VCE = 4. Vdc) *DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product NA, MJ ft.8 6. MHz (IC =. Adc, VCE = 4. Vdc, f =. MHz) MJ9A, MJ6 ÎÎÎ. 8 Output Capacitance Î Cob 6 6 pf ÎÎ ÎÎ (VCB = Vdc, IE =, f =. MHz) *SWITCHING CHARACTERISTICS (NA only) ÎÎ RESISTIVE LOAD ÎÎ Delay Time ÎÎ td. µs ÎÎ Rise Time Î (VCC = Vdc, IC = 4. Adc, Î tr 4. µs IB = IB ÎÎ =.4 Adc, Storage Time Î tp p = µs Duty Cycle %Î ts. µs ÎÎ Fall Time ÎÎ tf 6. µs () Pulse Test: Pulse Width = µs, Duty Cycle %. * Indicates JEDEC Registered Data. (NA) Motorola Bipolar Power Transistor Device Data

3 hfe, DC CURRENT GAIN 7 7. TJ = C C VCE = 4. V C VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) TJ = C IC = A 4 A 8 A..... IB, BASE CURRENT (AMP) Figure. DC Current Gain Figure. Collector Saturation Region V, VOLTAGE (VOLTS)..... TC = C IC/IB = VCE = 4 V IC/IB = f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)... MJ9A MJ6 NA MJ..... IC, COLLECTOR CURRENT (AMPS) Figure 4. On Voltages Figure. Current Gain Bandwidth Product + V µs Ω VCC + V 7. Ω SCOPE t, TIME ( µ s) 7.7. VCC = V IC/IB = TJ = C tr V tr, tf ns DUTY CYCLE =.% V N67... td Figure 6. Switching Times Test Circuit (Circuit shown is for NPN) Figure 7. Turn On Time Motorola Bipolar Power Transistor Device Data

4 t, TIME ( µ s) tf VCC = IC/IB = IB = IB TJ = C ts IC, COLLECTOR CURRENT (AMPS) C, CAPACITANCE (pf) 4. Cib.. Cob VR, REVERSE VOLTAGE (VOLTS) TJ = C NA MJ MJ9A MJ6 Figure 8. Turn Off Times Figure 9. Capacitances, COLLECTOR CURRENT ( µ A) IC,.. +. VCE = V TJ = C C REVERSE C NPN IC = ICES FORWARD VBE, BASE EMITTER VOLTAGE (VOLTS) COLLECTOR CUT OFF REGION, COLLECTOR CURRENT ( µ A) IC.... VCE = V TJ = C C REVERSE C PNP IC = ICES FORWARD VBE, BASE EMITTER VOLTAGE (VOLTS) Figure. NA, MJ Figure. MJ9A, MJ6 I C, COLLECTOR CURRENT (AMPS) BONDING WIRE LIMIT THERMAL TC = C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 6 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) µs µs ms ms dc.... BONDING WIRE LIMIT THERMAL TC = C (SINGLE PULSE) SECOND BREAKDOWN LIMIT. 6 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) ms. ms ms dc Figure. Forward Bias Safe Operating Area NA, MJ9A Figure. Forward Bias Safe Operating Area MJ, MJ6 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures and is based on TC = C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to % but must be derated for temperature according to Figure. 4 Motorola Bipolar Power Transistor Device Data

5 PACKAGE DIMENSIONS V H E A N U Q C T SEATING PLANE D PL K (.) M T Q M Y M L G Y (.) M T B Y M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 98.. CONTROLLING DIMENSION: INCH.. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO 4AA OUTLINE SHALL APPLY. INCHES MILLIMETERS DIM MIN MAX MIN MAX A. REF 9.7 REF B C D E G.4 BSC.9 BSC H. BSC.46 BSC K L.66 BSC 6.89 BSC N.8.8 Q U.87 BSC BSC V STYLE : PIN. BASE. EMITTER CASE: COLLECTOR CASE 7 TO 4AA (TO ) ISSUE Z Motorola Bipolar Power Transistor Device Data

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