STW45NM50FD. N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh Power MOSFET (with fast diode) Features. Application. Description

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1 Nchannel 500 V, 0.07 Ω, 45 A, TO247 FDmesh Power MOSFET (with fast diode) Features Type V DSS R DS(on) max STW45NM50FD 500 V < 0.1 Ω 45 A I D 100% avalanche tested High dv/dt and avalanche capabilities Low input capacitance and gate charge Low gate input resistance TO Application Switching applicatio Description The FDmesh associates all advantages of reduced onresistance and fast switching with an intriic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging STW45NM50FD W45NM50FD TO247 Tube July 2009 Doc ID 7955 Rev 10 1/

2 Contents STW45NM50FD Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history /12 Doc ID 7955 Rev 10

3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drainsource voltage (V GS = 0) 500 V V GS Gatesource voltage ± 30 V I D Drain current (continuous) at T C = 25 C 45 A I D Drain current (continuous) at T C =100 C 28.4 A I (1) DM Drain current (pulsed) 180 A P TOT Total dissipation at T C = 25 C 417 W dv/dt (2) T J T stg Derating factor 2.08 W/ C Peak diode recovery voltage slope 20 V/ Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. I SD 45 A, di/dt 400 A/µs, V DD = 80%V (BR)DSS 65 to 150 C Table 3. Thermal resistance Symbol Parameter Value Unit R thjcase Thermal resistance junctioncase max 0.3 C/W R thja Thermal resistance junctionambient max 30 C/W T l Maximum lead temperature for soldering purpose 300 C Table 4. Avalanche data Symbol Parameter Value Unit I AR E AS Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting T J = 25 C, I D = I AR, V DD = 50 V) 22.5 A 800 mj Doc ID 7955 Rev 10 3/12

4 Electrical characteristics STW45NM50FD 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditio Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drainsource breakdown voltage Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) I D = 250 µa, V GS = V V DS = Max rating, V DS = Max C µa µa V GS = ± 30 V ±100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V R DS(on) Static drainsource on resistance V GS = 10 V, I D = 22.5 A Ω Table 6. Dynamic Symbol Parameter Test conditio Min. Typ. Max. Unit (1) g fs C iss C oss C rss C (2) oss eq. Q g Q gs Q gd R G Forward traconductance Input capacitance Output capacitance Reverse trafer capacitance Equivalent output capacitance Total gate charge Gatesource charge Gatedrain charge Gate input resistance V DS >I D(on) x R DS(on)max I D = 22.5 A V DS =25 V, f=1 MHz, V GS =0 20 S pf pf pf V GS =0, V DS =0 to 400 V 350 pf V DD = 400 V, I D = 45 A V GS =10 V Figure 14 f=1 MHz Gate DC Bias= 0 test signal level = 20 mv open drain nc nc nc 2 Ω 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. C oss eq. is defined as a cotant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS 4/12 Doc ID 7955 Rev 10

5 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditio Min. Typ. Max. Unit t d(on) t r Turnon delay time Rise time V DD =250 V, I D = 22.5 A, R G =4.7 Ω, V GS =10 V Figure t r(voff) t f t c Offvoltage rise time Fall time Crossover time V DD =400 V, I D = 45 A, R G =4.7 Ω, V GS =10 V Figure Table 8. Source drain diode Symbol Parameter Test conditio Min. Typ. Max. Unit I SD Sourcedrain current 45 A (1) I SDM Sourcedrain current (pulsed) 180 A (2) V SD Forward on voltage I SD = 45 A, V GS = V t rr Q rr I RRM t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% I SD = 45 A, V DD = 100 V di/dt = 100 A/µs, (see Figure 18) I SD = 45 A, Tj = 150 C di/dt = 100 A/µs, V DD =100 V, (see Figure 18) nc A nc A Doc ID 7955 Rev 10 5/12

6 Electrical characteristics STW45NM50FD 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Trafer characteristics Figure 6. Traconductance Figure 7. Static drainsource on resistance 6/12 Doc ID 7955 Rev 10

7 Electrical characteristics Figure 8. Gate charge vs gatesource voltage Figure 9. Capacitance variatio Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Sourcedrain diode forward characteristics Doc ID 7955 Rev 10 7/12

8 Test circuits STW45NM50FD 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD VGS VD RG RL D.U.T µf 3.3 µf VDD Vi=20V=VGMAX 2200 µf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. switching and diode recovery times Unclamped inductive load test circuit 25 Ω G A D D.U.T. S B A FAST DIODE B A B D L=100µH µf µf VDD VD ID L 2200 µf 3.3 µf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 8/12 Doc ID 7955 Rev 10

9 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specificatio, grade definitio and product status are available at: ECOPACK is an ST trademark. Doc ID 7955 Rev 10 9/12

10 Package mechanical data STW45NM50FD TO247 Mechanical data Dim. A A1 b b1 b2 c D E e L L1 L2 øp ør S mm. Min. Typ Max /12 Doc ID 7955 Rev 10

11 Revision history 5 Revision history Table 9. Document revision history Date Revision Changes 05Apr Modified value on Source drain diode 26Apr New template 23Jul Modified values on Switching times Doc ID 7955 Rev 10 11/12

12 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, correctio, modificatio or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditio of sale. Purchasers are solely respoible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No licee, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a licee grant by ST for the use of such third party products or services, or any intellectual property contained therein or coidered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisio different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America 12/12 Doc ID 7955 Rev 10

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