ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040 BF2040R BF2040W

Transcription

1 BF... Silicon NChannel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5 V Pbfree (RoHS compliant) package Qualified according AEC Q11 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF BFR BFW SOT13 SOT13R SOT33 1=S 1=D 1=D =D =S =S 3=G 3=G1 3=G1 =G1 =G =G NFs NFs NFs Maximum Ratings Parameter Symbol Value Unit Drainsource voltage V DS V Continuous drain current I D Gate 1/ gate source current ±I G1/SM 1 Gate 1 (external biasing) +V G1SE 7 V Total power dissipation T S 7 C, BF, BFR T S 9 C, BFW P tot mw Storage temperature T stg C Channel temperature T ch 15 Thermal Resistance Parameter Symbol Value Unit Channel soldering point 1) BF, BFR BFW R thchs 1 For calculation of R thja please refer to Application Note Thermal Resistance K/W 37 1

2 BF... Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drainsource breakdown voltage V (BR)DS 1 V I D = µa, V G1S =, V GS = Gate1source breakdown voltage +V (BR)G1SS 15 +I G1S = 1, V GS =, V DS = Gatesource breakdown voltage +V (BR)GSS 15 +I GS = 1, V G1S =, V DS = Gate1source leakage current +I G1SS 5 na V G1S = 5 V, V GS =, V DS = Gatesource leakage current +I GSS 5 V GS = 5 V, V G1S =, V DS = Drain current I DSS 5 µa V DS = 5 V, V G1S =, V GS = V Drainsource current I DSX 15 V DS = 5 V, V GS = V, R G1 = 1 kω Gate1source pinchoff voltage V G1S(p).3. V V DS = 5 V, V GS = V, I D = µa Gatesource pinchoff voltage V DS = 5 V, I D = µa V GS(p).3.7

3 BF... Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Forward transconductance g fs 37 ms V DS = 5 V, I D = 15, V GS = V Gate1 input capacitance C g1ss.9 3. pf V DS = 5 V, I D = 15, V GS = V, f = 1 MHz Output capacitance C dss 1. V DS = 5 V, I D = 15, V GS = V, f = 1 MHz Power gain G p 3 db V DS = 5 V, I D = 15, V GS = V, f = MHz Noise figure F 1.. db V DS = 5 V, I D = 15, V GS = V, f = MHz Gain control range V DS = 5 V, V GS =... V, f = GHz G p 5 5 3

4 BF... Total power dissipation P tot = ƒ(t S ) BF, BFDR Total power dissipation P tot = ƒ(t S ) BFW mw Ptot 1 Ptot C C 15 T S T S Drain current I D = ƒ(i G1 ) V GS = V Output characteristics I D = ƒ(v DS ) V GS = V V G1S = Parameter 1.V ID ID V 1.V 1.1V 1V µa 9 I G V 1 V DS

5 BF... Gate 1 current I G1 = ƒ(v G1S ) V DS = 5V V GS = Parameter Gate 1 forward transconductance g fs = ƒ(i D ) V DS = 5V, V GS = Parameter 195 µa 15 V ms 5 V IG V gfs V 3.5V 15 3V 5.5V V 15 V V V 3. V G1S Drain current I D = ƒ(v G1S ) V DS = 5V V GS = Parameter I D Drain current I D = ƒ(v GG ) V DS = 5V, V GS = V, R G1 = kω (connected to V GG, V GG =gate1 supply voltage) V 3V 1 1 ID V ID V V V G1S 1 3 V 5 V GG 5

6 BF... Drain current I D = ƒ(v GG ) V GS = V R G1 = Parameter in kω ID Crossmodulation V unw = (AGC) V DS = 5 V Vunw 1 dbµv V V GG =V DS db 5 AGC

7 BF... Cossmodulation test circuit V AGC V DS n7 n7 R1 1kΩ. uh n7 RL 5Ω R GEN 5Ω 5 Ω n7 RG1 V GG Semibiased 7

8 Package SOT13 BF... Package Outline ± B M B. ± MIN. 1 MAX..... M A 1±.1.1 MAX. 1 MAX ±.1 A Foot Print Marking Layout (Example) RF s 5 Manufacturer 5, June Date code (YM) BFP11 Type code Standard Packing Reel ø1 mm = 3. Pieces/Reel Reel ø33 mm = 1. Pieces/Reel

9 Package SOT13R BF... Package Outline ± B ± MIN. MAX.... 1±.1.1 MAX. Foot Print MAX. 1.3 ± A.5 M B.. 1. Marking Layout (Example) Reverse bar 5, June Date code (YM) Standard Packing Reel ø1 mm = 3. Pieces/Reel Reel ø33 mm = 1. Pieces/Reel BFP11R Type code... M A...15 Manufacturer

10 Package SOT33 BF... Package Outline ± MAX..1.9 ±.1 A x.1 M ±.1.1 MIN.. M Foot Print. Marking Layout (Example) 5, June Date code (YM) BGA Type code Standard Packing Reel ø1 mm = 3. Pieces/Reel Reel ø33 mm = 1. Pieces/Reel A ± Manufacturer

11 BF... Edition 1 Published by Infineon Technologies AG 17 München, Germany Infineon Technologies AG 7. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11