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1 Distributed by: The content and copyrights of the attached material are the property of its owner.
2 -PIN DIP ZERO-CROSS DESCRIPTION The MOC303XM and MOC304XM devices consist of a AlGaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a triac in the interface of logic systems to equipment powered from 5 VAC lines, such as teletypewriters, CRTs, solid-state relays, industrial controls, printers, motors, solenoids and consumer appliances, etc. FEATURES Simplifies logic control of 5 VAC power Zero voltage crossing dv/dt of 2000 V/µs typical, 000 V/µs guaranteed VDE recognized (File # 947) -ordering option V (e.g., MOC3043VM) ANODE CATHODE 2 SCHEMATIC MAIN TERM. 5 NC* APPLICATIONS Solenoid/valve controls Static power switches Temperature controls AC motor starters Lighting controls AC motor drives E.M. contactors Solid state relays N/C 3 ZERO CROSSING CIRCUIT *DO NOT CONNECT (TRIAC SUBSTRATE) 4 MAIN TERM. ABSOLUTE MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Parameters Symbol Device Value Units TOTAL DEVICE Storage Temperature T STG All -40 to +50 C Operating Temperature T OPR All -40 to +85 C Lead Solder Temperature T SOL All 20 for 0 sec C Junction Temperature Range T J All -40 to +00 C Isolation Surge Voltage () (peak AC voltage, 0Hz, sec duration) V ISO All 7500 Vac(pk) Total Device Power 25 C 250 mw P D All Derate above 25 C 2.94 mw/ C EMITTER Continuous Forward Current I F All 0 ma Reverse Voltage V R All V Total Power Dissipation 25 C Ambient 20 mw P D All Derate above 25 C.4 mw/ C DETECTOR MOC303M/2M/3M 250 V Off-State Output Terminal Voltage DRM MOC304M/2M/3M 400 Peak Repetitive Surge Current (PW = 00 µs, 20 pps) I TSM All A Total Power 25 C Ambient All 50 mw P Derate above 25 C D All.7 mw/ C Note. Isolation surge voltage, V ISO, is an internal device dielectric breakdown rating. For this test, Pins and 2 are common, and Pins 4, 5 and are common. V 200 Fairchild Semiconductor Corporation DS /0/0 OF 9
3 -PIN DIP ZERO-CROSS ELECTRICAL CHARACTERISTICS (T A = 25 C Unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS Parameters Test Conditions Symbol Device Min Typ Max Units EMITTER Input Forward Voltage I F = 30 ma V F All.25.5 V Reverse Leakage Current V R = V I R All µa DETECTOR Peak Blocking Current,Either Direction Rated V DRM, I F = 0 (note ) I DRM All 00 na Peak On-State Voltage,Either Direction I TM = 00 ma peak, I F = 0 V TM All.8 3 V Critical Rate of Rise of Off-State Voltage I F = 0 (figure 9, note 3) dv/dt All 000 V/µs TRANSFER CHARACTERISTICS (T A = 25 C Unless otherwise specified.) DC Characteristics Test Conditions Symbol Device Min Typ Max Units MOC303M/MOC304M 5 LED Trigger Current Main terminal voltage = 3V (note 2) I FT MOC3032M/MOC3042M 0 ma MOC3033M/MOC3043M 5 Holding Current, Either Direction I H All 400 µa ZERO CROSSING CHARACTERISTICS (T A = 25 C Unless otherwise specified.) Characteristics Test Conditions Symbol Device Min Typ Max Units Inhibit Voltage I F = rated I FT, MT-MT2 voltage above which device will not trigger off-state V IH All 20 V Leakage in Inhibited State I F = rated I F, rated V DRM, off-state I DRM2 All 500 µa Note. Test voltage must be applied within dv/dt rating. 2. All devices are guaranteed to trigger at an I F value less than or equal to max I FT. Therefore, recommended operating I F lies between max I FT (5 ma for MOC303M & MOC304M, 0 ma for MOC3032M & MOC3042M, 5 ma for MOC3033M & MOC3043M) and absolute max I F (0 ma). 3. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only. 2 OF 9 8/0/0 DS30025
4 I FT, NORMALIZED I DRM, LEAKAGE CURRENT (na) V F - FORWARD VOLTAGE (V) I TM, ON-STATE CURRENT (ma) -PIN DIP ZERO-CROSS Figure. LED Forward Voltage vs. Forward Current Figure 2. On-State Characteristics I F = 30mA T A = 25 o C T A = -40 o C 0. T A = 25 o C T A = 85 o C I F - LED FORWARD CURRENT (ma) V TM, ON-STATE VOLTAGE (VOLTS).3 Figure 3. Trigger Current vs. Temperature 0000 Figure 4. Leakage Current, I DRM vs. Temperature NORMALIZED TO T A = 25 o C T A, AMBIENT TEMPERATURE ( o C) T A, AMBIENT TEMPERATURE ( o C) DS /0/0 3 OF 9
5 I H, HOLDING CURRENT (NORMALIZED) V INH - NORMALIZED I DRM2, NORMALIZED I FT, LED TRIGGER CURRENT (NORMALIZED) -PIN DIP ZERO-CROSS Figure 5. I DRM2 - Leakage in Inhibit State vs. Temperature Figure. LED Current Required to Trigger vs. LED Pulse Width.8. 4 NORMALIZED TO PW IN >> 00 µs.4 2 I F = RATED I FT T A, AMBIENT TEMPERATURE ( o C) PW IN, LED TRIGGER PULSE WIDTH (µs) 3.2 Figure 7. Holding Current, I H vs. Temperature.3 Figure 8. Inhibit Voltage vs. Temperature NORMALIZED TO T A = 25 o C T A, AMBIENT TEMPERATURE ( o C) T A, AMBIENT TEMPERATURE ( o C) 4 OF 9 8/0/0 DS30025
6 -PIN DIP ZERO-CROSS +250 for MOC303XM +400 for MOC304XM Vdc PULSE INPUT MERCURY WETTED RELAY R TEST C TEST D.U.T. R = 0 kω X00 SCOPE PROBE. The mercury wetted relay provides a high speed repeated pulse to the D.U.T x scope probes are used, to allow high speeds and voltages. 3. The worst-case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then removing the current. The variable R TEST allows the dv/dt to be gradually increased until the D.U.T. continues to trigger in response to the applied voltage pulse, even after the LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. is measured at this point and recorded. Figure 9. Static dv/dt Test Circuit APPLIED VOLTAGE WAVEFORM 58 V Vmax = 250 V APPLIED VOLTAGE WAVEFORM 252 V V max = 400 V 0 VOLTS dv/dt = 0.3 Vmax = 58 0 VOLTS dv/dt = 0.3 Vmax = 252 Figure 0. Static dv/dt Test Waveform (MOC303M, MOC3032M, MOC3033M) Figure. Static dv/dt Test Waveform (MOC304M, MOC3042M, MOC3043M) Typical circuit (Fig 2, 3) for use when hot line switching is required. In this circuit the hot side of the line is switched and the load connected to the cold or neutral side. The load may be connected to either the neutral or hot line. R in is calculated so that I F is equal to the rated I FT of the part, 5 ma for the MOC3033M and MOC3043M, 0 ma for the MOC3032M and MOC3042M, or 5 ma for the MOC303M and MOC304M. The 39 ohm resistor and 0.0 µf capacitor are for snubbing of the triac and may or may not be necessary depending upon the particular triac and load used. V CC R in 80 Ω HOT V CC R in 30 Ω HOT 2 3 MOC303M MOC3032M MOC3033M 5 39 Ω * 4 5 VAC 2 3 MOC304M MOC3042M MOC3043M 5 39 Ω * VAC k LOAD NEUTRAL LOAD NEUTRAL For highly inductive loads (power factor < 0.5), change this value to 30 ohms. * Figure 2. Hot-Line Switching Application Circuit (MOC303M, MOC3032M, MOC3033M) For highly inductive loads (power factor < 0.5), change this value to 30 ohms. * Figure 3. Hot-Line Switching Application Circuit (MOC304M, MOC3042M, MOC3043M) DS /0/0 5 OF 9
7 -PIN DIP ZERO-CROSS 5 VAC R D V CC Rin 2 3 MOC303M MOC3032M MOC3033M Ω SCR SCR R2 D2 LOAD Figure 4. Inverse-Parallel SCR Driver Circuit (MOC303M, MOC3032M, MOC3033M) Suggested method of firing two, back-to-back SCR s with a Fairchild triac driver. Diodes can be N400; resistors, R and R2, are optional k ohm. 240 VAC R D V CC Rin 2 3 MOC304M MOC3042M MOC3043M Ω SCR SCR R2 D2 LOAD Figure 5. Inverse-Parallel SCR Driver Circuit (MOC304M, MOC3042M, MOC3043M) Suggested method of firing two, back-to-back SCR s with a Fairchild triac driver. Diodes can be N400; resistors, R and R2, are optional 330 ohm. Note: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. OF 9 8/0/0 DS30025
8 -PIN DIP ZERO-CROSS Package Dimensions (Through Hole) Package Dimensions (Surface Mount) (8.89) (8.3) PIN ID (8.89) (8.3) PIN ID (.0) (.0) 0.20 (.0) (.0) (9.90) (8.43) (.77) (.02) 0.04 (0.3) 0.00 (0.25) (8.3) (.77) (.02) 0.04 (0.3) 0.00 (0.25) (8.3) (5.08) 0.5 (2.93) (5.08) 0.5 (2.93) 0.02 (0.30) (0.20) 0.00 (2.54) 0.05 (0.38) (0.50) 0.0 (0.4) 0.00 (2.54) (0.30) (0.3) (0.5) (0.50) 0.0 (0.4) 0.00 [2.54] (0.88) 0.00 (0.) Package Dimensions (0.4 Lead Spacing) (8.89) (8.3) PIN ID. Recommended Pad Layout for Surface Mount Leadform 0.20 (.0) (.0) (.78) 0.00 (.52) (.77) (.02) 0.04 (0.3) 0.00 (0.25) (0.79) 0.00 (2.54) (7.75) (0.7) (5.08) 0.5 (2.93) 0.00 (2.54) 0.05 (0.38) (0.50) 0.0 (0.4) 0.00 [2.54] 0.02 (0.30) (0.2) (0.80) (0.) NOTE All dimensions are in inches (millimeters) DS /0/0 7 OF 9
9 ORDERING INFORMATION -PIN DIP ZERO-CROSS Option Order Entry Identifier Description S S Surface Mount Lead Bend SR2 SR2 Surface Mount; Tape and reel T T 0.4 Lead Spacing V V VDE 0884 TV TV VDE 0884, 0.4 Lead Spacing SV SV VDE 0884, Surface Mount SR2V SR2V VDE 0884, Surface Mount, Tape & Reel Carrier Tape Specifications ( D Taping Orientation) 4.5 ± MAX 4.0 ± ± ± 0.05 Ø.5 MIN.75 ± ± 0..5 ± ± ± MAX 0. ± 0.20 Ø.5 ± 0./-0 User Direction of Feed NOTE All dimensions are in inches (millimeters) 8 OF 9 8/0/0 DS30025
10 -PIN DIP ZERO-CROSS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DS /0/0 9 OF 9
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