Surface Analytical Services of the Surface Physics Laboratory, Technical University Budapest
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1 Surface Analytical Services of the Surface Physics Laboratory, Technical University Budapest Contact persons: Dr László Koocsányi, Tel.: , Dr Katalin V. Josepovits, Tel , fax:
2 Whether a single measurement or a comprehensive solution, the Surface Physics Laboratory is ready to assist you with your problems. Information about surfaces can be critical in understanding materials properties and interactions. We use techniques like SIMS, Auger and XPS to determine the composition and the chemical bonding of the top few angstroms to several microns of a material. The combined power of our varied techniques yields more complete answers. If you know which evaluation technique applies to your problem, we will conduct the analysis according to your request, and provide the data you need. Row data can be returned (e.g. for quality testing purposes) within 24 hours. If you are not sure of the approach to take, our staff will propose an analysis plan, and we can give you the added value of our expert interpretation. You can contract us on a case to case or on a yearly basis. We also offer expert consulting and assistance to enhance your understanding. If your problems or requirements are more complex, we offer fully integrated problem solving, in framework of a research contract. Problem Solving Trace elemental analysis Quality tests in manufacturing process Doping profile characterization Contamination tests Segregation, aggregation Adhesion Fracture Corrosion Heterogeneous catalysis Purity of starting materials Surface Analytical Tools AES XPS SIMS Surface Chemistry Bonding v Elemental Analysis v v Trace Elemental Analysis v Quantitative Dopant Measurements v Depth Profiling v v Imaging v Further possibilities: structure and morphology: Scanning electron microscope (SEM) phase and texture: X-ray diffractometry (XRD)
3 Secondary Ion Mass Spectrometry (SIMS) This method provides elemental surface analysis and depth profiling with great sensitivity for all elements (H and He as well). Characteristics: Sensitivity: 1ppm Depth resolution: 1-10 nm Static and dynamic SIMS Isotope abundance Conducting and insulating samples cps O + 52 Cr + 56 Fe + 48 Ti + 58 Ni + 28 Si + 60 Ni + 40 Ar + 72 FeO 68 CrO + Some Fields of Applications: Semiconductors Hydrogen and oxygen analysis Polymers Corrosion Metallurgy Interface characterization Thin film composition and microstructure m/e Positive spectrum of steel 1E+05 1E+04 1E+03 1E+02 1E+01 1E sputtering time [min] 12C- 16O- 24C2- Depth profile of a polycrystalline diamond layer on a silicon substrate Samples: Solid (metals, glass, semiconductors, ceramics, polymers) Size: ~ 1cm 2 Preparation: free of human contamination (use gloves when handling) Instrument Specifications: Primary ion (atom) gun: Balzers (1973): Ar + ions Ion Energy: kev Ion current: A Spot size: 3 mm VG Microtech EX05: Ar + ions, Ar atoms (for the analysis of insulators) Ion (atom) energy: kev Max. ion current: 2.5 μa Spot size (ions): 150 μm Max. scan area (ions): 2.5x2.5 mm Quadrupole mass spectrometer (mass range: 1-300amu, m/δm=150amu) Limitations: Quantification requires standards Lateral resolution Destructive
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5 Auger Electron Spectroscopy (AES) This method allows elemental surface and depth profiling with submicron spatial resolution. Characteristics: Elemental surface analysis ( except H and He) Sensitivity: 1% Compositional depth profiles Line scans Elemental mapping (Scanning Auger Mode) Scanning electron imaging capabilities Some Fields of Applications: Semiconductors Corrosion Metallurgy Interface characterization Thin film composition and microstructure Lateral variation of composition Samples: Conducting solids Size: up to 2.5 cm 2 Preparation: free of human contamination (use gloves when handling) Instrument Specification: Electron gun: VG Microtech LEG200 Min. spot size: < 200 nm Energy: 0-10 kev Current: 3 μa Hemispherical electron energy analyser: VG Microtech CLAM2 Energy range: ev Secondary electron detector: Scintillator (VG Microtech) Hot stage for in-situ sample heating Ion beam etching for depth profile analysis Limitations: H and He undetectable Electron beam may cause damage in some samples Insulating samples are difficult to analyze
6 AES investigation of a metal layer structure evaporated on a Si substrate SEM image of the sample 300μm Elemental mapping (black areas are rich in Si) Auger line scan of Ni peak (848 ev) Elemental mapping (dark areas are rich in Ni)
7 X-ray Photoelectron Spectroscopy (XPS) This is a surface-sensitive chemical analysis technique that provides straightforward data interpretation and chemical bonding information. Characteristics: Elemental surface analysis (except H) Sensitivity: 0.1% Chemical bonding identification Compositional depth profiles Minimal sample damage Some Fields of Applications: Semiconductors Determination of oxidation states Polymer chemistry Organic monolayers Corrosion Metallurgy Interface characterization Surface diffusion and reactions Wide scan spectrum of SrTiO 3 Samples: Solid (metals, glass, semiconductors, ceramics, polymers) Size: up to 2.5 cm 2 Preparation free of human contamination (use gloves when handling) Instrument Specifications: X-ray source: VG Microtech XR3E2 (300W) Twin anode: AlKα ( ev), MgKα ( ev) Hemispherical electron energy analyser: VG Microtech CLAM2 Energy range: ev Resolution: 0.85 ev (at Count Rate) 1.5 ev (at Count Rate) Hot stage for in-situ sample heating Ion beam etching for depth profile analysis Limitations: No lateral mapping Elemental H undetectable
8 Examples Heat treatment optimisation of ohmic and Schottky contacts based on the results of SIMS and AES measurements In VLSI circuits better ohmic and Schottky contacts can be achieved by using Pt-Si instead of Al metallization. Platinum layers deposited onto Si substrate had to be annealed. The optimum procedure could be found by checking the composition and bonding after heat treatment by SIMS and AES. The measurements have shown that if the sample was annealed at 450 C in H 2, good quality Pt-Si was achieved. On the other hand, in samples heat treated in O 2, an oxygen rich Pt layer was found on top of the Pt-Si layer. Material selection for gas sensor on the basis of corrosion stability, based on AES depth profiling and lateral element distribution Different semiconducting oxides in view for gas sensing application were aged at high temperature in different corrosive gases for prolonged times. The composition change due to corrosion was detected by AES depth profiling and AES lateral element distribution. It was found that SrTiO 3 is attacked by Cl 2 and SO 2, Ga 2 O 3 only by Cl 2 and CeO 2 is resistant to all gases examined (Cl 2, NO 2, SO 2, H 2 S, H 2 and CO). Optimisation of the solvent removal process in the production of capacitors of solid electrolyte During production different additives are used to enhance the pressability of the starting porous material. It was shown with AES, SIMS and XPS analyses that the remnants of these additives are responsible for failure in the produced capacitors. The conditions for solvent removal from porous bodies with different grain sizes were determined to optimise production, using the data provided by the compositional analysis after various steps of the process. Effect of parameter settings on the deposition of magneto-optical information storage layer structures, as studied by AES and SIMS. Magneto-optical (MO) data storage combines the major advantages of magnetic and optical recording technologies. TbFeCo layers were deposited onto glass substrates from a TbFeCo alloy target by magnetron sputtering. Examining the effect of the magnetron sputtering parameter settings on the layer composition by SIMS and AES measurements, we have found that increasing Ar pressure makes the coercitive force, the thickness and the Tb/Fe ratio increase. In situ observation of chemical reactions and transport on surfaces under simulated process conditions Work function lowering dopants must be replenished at the hot end of a cathode from a buffer oxide on the cool end in a discharge lamp. In optimising the process, the critical temperatures for diffusion and evaporation have to be known, and the chemical reactions understood. In situ XPS, AES investigations carried out in the framework of a research project - provided the necessary data for our contractor. Our partners: GE Lighting Tungsram Rt (Budapest, H), Siemens Matsushita Components GmbH & Co. KG (Heidenheim, D), Siemens AG, ZT KM 2 (München, D), Alcoa-Köfém Kft. (Székesfehérvár, H), Csepeli Fémmű Rt. (Budapest, H), Siemens Rt. Elektromechanical Components, Power Modules (Bicske, H), Zoltek Magyar Viscosa Rt (Nyergesújfalu, H), Videoton Holding (Székesfehérvár, H), Siemens AG AUT GT34 (Karlsruhe, D), Steinel AG (Einsiedeln, Ch) and a number of Hungarian SMEs.
9 UP TO DATE FACILITIES Our complex equipment makes in situ or quasi in situ XPS and AES measurements possible during simulated technological process steps (controlled exposure to heat, gases, plasma, ion irradiation).
h e l p s y o u C O N T R O L
contamination analysis for compound semiconductors ANALYTICAL SERVICES B u r i e d d e f e c t s, E v a n s A n a l y t i c a l g r o u p h e l p s y o u C O N T R O L C O N T A M I N A T I O N Contamination
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