CP25TD1-24A LOW POWER SWITCHING USE TRANSFER MOLD TYPE,INSULATED TYPE
|
|
|
- Joleen Greene
- 7 years ago
- Views:
Transcription
1 Pre. S.Kou, M.Seo Rev. Apr. T.Igarashi May 7, 2005 TENTATIVE, C...25A 9 CES V Insulated Type ',3-CIB Module -,QYHUWHU-&RQYHUWHU%UDNH APPLICATION AC & DC motor controls, General purpose inverters MAXIMUM RATINGS (Tj=25 C, unless otherwise noted) Inverter Part V CES Collector-emitter voltage G-E Short 1200 V V GES Gate-emitter voltage C-E Short ±20 V I C Collector current DC, Tc=86 C (Note 1) 25 A I CM Pulse (Note 3) 50 A P C Maximum collector dissipation Tc=25 C (138) W I E (Note2) Emitter current DC, Tc=30 C (Note 1) 25 A Pulse (Note 3) 50 A I EM (Note2) Brake Part V CES Collector-emitter voltage G-E Short 1200 V V GES Gate-emitter voltage C-E Short ±20 V I C Collector current DC, Tc=100 C (Note 1) 15 A I CM Pulse (Note 3) 30 A P C (Note4) Maximum collector dissipation Tc=25 C (113) W V RRM Repetitive peak reverse voltage Clamp diode part 1200 V I FM (Note4) Forward current Clamp diode part 15 A Converter Part V RRM Repetitive peak reverse voltage 1600 V E a Recommended AC input voltage 440 V I O DC output current 3- rectifying circuit 25 A I FSM Surge forward current 1/2cycle at 60Hz,Peak value (250) A Non-repetitive I 2 t I 2 t for fusing Value for 1cycle of surge current (260) A 2 s 1-6
2 Common Rating Tj junction temperature (Note 5) Inverter, brake, converter part -20 J 125 C Tstg Storage temperature -20 J 125 C Viso Isolation voltage 60Hz, Sinusoidal AC 1 min. Applied between pins and heat-sink 2500 Vrms - Mounting torque Screw: M4 Recommended: 1.18N m (0.98J1.47) N m - Weight Typical value 52 g ELECTRICAL CHARACTERISTICS (Tj=25 C, unless otherwise noted) Inverter Part I CES Collector cutoff current V CE =V CES, V GE =0V ù ù 1 ma V GE(th) Gate emitter threshold voltage I =2.5mA, V =10V C CE V I GES Gate emitter cutoff current V GE =20V, V CE =0V ù ù 1 A V CE (sat) Collector emitter saturation voltage I C =25A Tj=25 C ù 1.8 (2.5) V GE =15V (Note6) Tj=125 C ù 2.0 ù V Cies Input capacitance V CE =10V, V GE =0V ù ù (4.94) Coes Output Capacitance f=1mhz ù ù (0.34) nf Cres Reverse transfer capacitance ù ù (0.10) Q G Total gate charge V CC =600V,I C =25A,V GE =15V ù (167) ù nc td(on) Turn-on delay time V CC =600V, I C =25A ù ù 100 tr Turn-on rise time V GE =15V, R G =13 ù ù 75 td(off) Turn-off delay time Tj=25 C ù ù 300 ns tf Turn-off fall time Inductive load ù ù 400 V ECƒ (Note1) Emitter-collector voltage I E =25A,V GE =0V ù V trrƒ (Note1) Reverse recovery time V CC =600V, I C =25A, V GE =0V ù 200 ù ns Qrrƒ (Note1) Reverse recovery charge R G =13, Tj=25 C ù 0.5 ù C Rth(j-c)Q Thermal resistance IGBT part, per 1/6 module ù ù (0.9) Rth(j-c)R FWDi part, per 1/6 module ù ù (1.5) C/W Rg External gate resistance 13 ù
3 Brake Part I CES Collector cutoff current V CE =V CES, V GE =0V ù ù 1 ma V GE(th) Gate emitter threshold voltage I =1.5mA, V =10V C CE V I GES Gate emitter cutoff current V GE =20V, V CE =0V ù ù 1 A VCE(sat) Collector emitter saturation voltage I C =15A Tj=25 C ù 1.8 (2.5) V GE =15V (Note6) Tj=125 C ù 2.0 ù V Cies Input capacitance V CE =25V, V GE =0V ù ù (3.14) Coes Output Capacitance f=1mhz ù ù (0.22) nf Cres Reverse transfer capacitance ù ù (0.06) Q G Total gate charge V CC =600V,I C =15A,V GE =15V ù (100) ù nc td(on) Turn-on delay time V CC =600V, I C =15A ù ù 100 Tr Turn-on rise time V GE =15V, R G =22 ù ù 75 td(off) Turn-off delay time Tj=25 C ù ù 300 ns Tf Turn-off fall time Inductive load ù ù 400 V FM Forward voltage drop IF=15A,Clamp diode part ù V Trr Reverse recovery time V CC =600V, I C =15A, V GE =15V, ù 200 ù ns Qrr Reverse recovery charge R G =22, Tj=25 C ù 0.3 ù C Rth(j-c)Q Thermal resistance IGBT part ù ù (1.1) Rth(j-c)R FWDi part ù ù (1.4) C/W Rg External gate resistance 22 ù 220 Converter Diode Part I RRM Repetitive reverse current V R =V RRM, Tj=125 C ù ù (1.0) ma V FM Forward voltage drop I F =25A ù V Rth(j-c) Thermal resistance Per 1/6 module ù ù (1.0) C/W NTC Thermistor Part R TH Resistance Tc=25 C (9.5) 10.0 (10.5) k B (25/100) B Constant Resistance at 25 C,100Ð (Note 7) ù 3450 ù K Common Rating Rth(c-f) Contact thermal resistance Case to fin,thermal compound applied (1module) ù ù ù C/W Note1 Tc is measured at the position just underneath the power chip. Note2 I E, V EC, trr, and Qrr represent characteristics of the anti-paralleled emitter to collector free-wheel diode(fwdi). Note3.Pulse width and repetition rate should be such that the device junction temp.(tj) does not exceed Tjmax rating. Note4 Junction temperature(tj) should not increase beyond 150 C Note5 The maximum junction temperature rating of the power chips integrated inside DIP-CIB is 150 C. However, to e nsure safe operation of DIP-CIB, the average junction temperature should be limited to below 125 C. Note6 Pulse width and repetition rate should be such as to cause negligible temperature rise. Note7 B = (InR1-InR2)/(1/T1-1/T2) where R1 is the resistance at T1(K), R2 the resistance at T2(K) 3-6
4 Performance Curves (Typical) Vce(sat) (V) Š Vge=15V Ic (A) Inverter IGBT output characteristics ºwwww Œ Œ ŠŒ Š Œ ˆŒ ˆ Œ ˆŠ ˆŽ ˆ ˆŒ ¾¼ ˆˆ Š Š Œ Œ Œ º¼ww Inverter IGBT output characteristics Vec (V) Œ Š Œ Š Ie (A) Inverter FWD forward characteristics š Ç ºÀË Åº¼wwÇ ˆ ˆ ˆ ˆ V GE =0V Cies Coes Cres ˆ ˆ ˆ ˆ º¼ww Inverter IGBT capacitance characteristics Š Œ Š Œ Vce(sat) (V) Vec (V) Š Vge=15V Œ ˆ ˆŒ Œ Š Ic (A) Œ ˆ ˆŒ Œ Š Ie (A) Brake-chopper IGBT output characteristics Brake-clamp FWD forward characteristics 4-6
5 VF (V) ÆÉÄ ÃÀѼ»w±Ë Á º wwä FWD IGBT IF (A) Converter diode forward characteristics ˆ ˆ ˆ ˆ ˆ «Àļwwʼº Inverter part transient thermal impedance ŠŒ Œ Switching delay time (ns) Š Œ ˆŒ ˆ Œ td(off) td(on) Collector current Ic (A) Rise and Fall time (ns) Œ ŠŒ Š Œ ˆŒ ˆ Œ Collector current Ic (A) tf tr Switching loss (mj/pls) ˆ Ž Œ Š ˆ Eon Err Eoff Ic (A) ªÎÀ˺ ÀžwÃÆÊÊwwÄ ÇÌÃʼ ˆ Esw(on) Esw(off) Err ˆ ˆ ˆ ¾wwE Note: Switching test condition: Vcc=600V, V D =15V, R G =13, Tj=125, Inductive load. 5-6
6 Outline Drawing TERMINAL CODE 1. TH1 2. TH2 3. P1 4. P 5. GUP 6. EUP 7. GVP 8. EVP 9. GWP 10. EWP 11. GB 12. N(B) 13. B 14. R 15. S 16. T 17. N1 18. GUN 19. UN 20. GVN 21. VN 22. GWN 23. WN 24. U 25. V 26. W Circuit Diagram R S T P1 P GUP GVP GWP B EUP EVP EWP GB GUN GVN GWN N1 N(B) UN U VN V WN W TH1 TH2 6-6
Chapter 2. Technical Terms and Characteristics
Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms
Trench gate field-stop IGBT, M series 650 V, 10 A low loss. Features. Description
Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data TAB D2PAK 1 3 Features 6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 10 A Tight parameter distribution
5SNA 3600E170300 HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 44-6 2-24 5SNA 36E73 HiPak IGBT Module VCE = 7 V IC = 36 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery antiparalleldiode IKWNH3 Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl G C E Highspeedswitchingseriesthirdgeneration
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323
GT6J2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT6J2 Current Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : t f =.6 μs (typ.) (I C = 6A) Low
FPAB20BH60B PFC SPM 3 Series for Single-Phase Boost PFC
FPAB20BH60B PFC SPM 3 Series for Single-Phase Boost PFC Features UL Certified No. E209204 (UL1557) 600 V - 20 A Single-Phase Boost PFC with Integral Gate Driver and Protection Very Low Thermal Resistance
IRGP4068DPbF IRGP4068D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature
STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT
N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY
n-channel t SC 5μs, T J(max) = 175 C V CE(on) typ. = 1.65V
IRGP463DPbF IRGP463D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 μs
IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings
![IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings](/thumbs/40/21333646.jpg "IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings")
PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543]
STGB10NB37LZ STGP10NB37LZ
STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop Low gate charge TAB TAB High current capability High voltage clamping feature Applications
0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39)
*.6 (4.6).9 (2.28).25 (5.2).9 (4.83).45 (.54) Max..4 (.4).35 (8.89).54 (3.9).42 (3.6) ia. PIN S.48 (29.6).8 (28.4) * May be notched or flat.3 (2.87).2 (2.56).635 (6.3).58 (4.73).37 (.94).26 (.66).5 (2.67).95
SPECIFICATION. Not recommend for new design. MS6M00814. Power Integrated Module 7MBR15UF060 MS6M00814. Fuji Electric Device Technology Co.,Ltd.
SPECIFICATION Device Name : Power Integrated Module Type Name : Spec. No. : 7MBR15UF6 MS6M814 D R A W N CHECKED CHECKED D A T E N A M E A P P R O V E D Dec.-- '4 Dec.-- '4 K. Komatsu O. Ikawa K. Yamada
200V, N-CHANNEL. Absolute Maximum Ratings. Features: www.irf.com 1 PD - 90370
PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF240 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFET technology
8ETH06 8ETH06S 8ETH06-1 8ETH06FP
Bulletin PD-0746 rev. D 03/03 8ETH06 8ETH06S 8ETH06-8ETH06FP Hyperfast Rectifier Features Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating unction Temperature UL E78996
@V GE = 15V, I C = 28A Latest technology IGBT design offers tighter parameter distribution coupled with exceptional n-channel reliability
PD - 97 INSULATED GATE BIPOLAR TRANSISTOR IRG4PF5W Features C Optimized for use in Welding and Switch-Mode Power Supply applications V CES = 9V Industry benchmark switching losses improve efficiency of
MUR1520 MURB1520 MURB1520-1
MUR520 MURB520 MURB520- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 35ns I F(AV) = 5Amp V R = 200V Description/
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features Lower on voltage drop (V CE(sat) ) 2 Lower C RES / C IES ratio (no cross-conduction susceptibility)
= 600 V = 56 A = 2.7 V. C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 32 ns V CE(SAT) t fi(typ. Preliminary Data Sheet
HiPerFAST TM IGBT IXGR 4N6C2 ISOPLUS247 TM IXGR 4N6C2D C2-Class High Speed IGBTs (Electrically Isolated Back Surface) S = 6 V 25 = 56 A (SAT) = 2.7 V t fi(typ = 32 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D
PM25RLB120. APPLICATION General purpose inverter, servo drives and other motor controls PM25RLB120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>
PMRLB0 PMRLB0 FETURE a) dopting new th generation IGBT (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=.9 @Tj= C b) I adopt the over-temperature conservation
Thyristor/Diode Modules M## 501 MCC MCD MDC
Date: 29.9.214 Data Sheet Issue: 3 Absolute Maximum Ratings Thyristor/Diode Modules M## 51 VRRM VDRM [V] MCC MCD MDC 12 51-12io2 51-12io2 51-12io2 14 51-14io2 51-14io2 51-14io2 16 51-16io2 51-16io2 51-16io2
RJH60D7DPK. Preliminary Datasheet. 600V - 50A - IGBT Application: Inverter. Features. Outline. Absolute Maximum Ratings. R07DS0165EJ0400 Rev.4.
RJH6D7DPK 6V - 5A - IGBT Application: Inverter Datasheet R7DS65EJ4 Rev.4. Apr 9, 22 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage V CE(sat) =.6 V typ. (at
STGB6NC60HD - STGB6NC60HD-1 STGF6NC60HD - STGP6NC60HD
STGB6NC60HD - STGB6NC60HD-1 STGF6NC60HD - STGP6NC60HD N-channel 600V - 7A - I 2 PAK / D 2 PAK / TO-220 / TO-220FP Very fast PowerMESH IGBT Features Type V CES V CE(sat) max @25 C STGB6NC60HD STGB6NC60HD-1
WFU4N65S Product Description
65V SuperJunction Power MOSFET Features Ultra low Rdson Ultra low gate charge (typ. Qg =3nC) % UIS tested RoHS compliant G General escription Power MOSFET is fabricated using advanced super junction technology.
Dual Common-Cathode Ultrafast Plastic Rectifier
(F,B)6AT thru (F,B)6JT Dual Common-Cathode Ultrafast Plastic Rectifier TO-0AB 6xT PIN PIN 3 PIN CASE 3 TO-63AB ITO-0AB F6xT PIN PIN 3 PIN 3 FEATURES Glass passivated chip junction Ultrafast recovery time
C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 9657B INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube
N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max I D P TOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W TO-220
STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features
Bulletin PD-20622 rev. B 0/06 STPS40L5CW SCHOTTKY RECTIFIER 2 x 20 Amps I F(AV) = 40Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 40 A waveform V RRM 5
STPS20L15DPbF SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 20Amp V R = 15V. Bulletin PD-20873 rev. A 02/07. Major Ratings and Characteristics
STPS20L5DPbF SCHOTTKY RECTIFIER 20 Amps I F(AV) = 20Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 20 A waveform V RRM 5 V I FSM @ tp = 5 μs sine 700 A
Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units
Bulletin PD -.338 rev. B /4 HEXFRED TM HFA5PB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced
STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V < 1.2 Ω 3.8 A TYPICAL R DS(on) =1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT
Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive
BUZ11 N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 30 A TYPICAL R DS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT
HFA15TB60 HFA15TB60-1
HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor
FGH40N60UFD 600 V, 40 A Field Stop IGBT
FGH4N6UFD 6 V, 4 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.8 V @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications Solar Inverter, UPS,
MT..KB SERIES 55 A 90 A 110 A THREE PHASE CONTROLLED BRIDGE. Power Modules. Features. Description. Major Ratings and Characteristics
MT..KB SERIES THREE PHASE CONTROLLED BRIDGE Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated
2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter
Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A
Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A 95PF(R)... DO-203AB (DO-5) PRODUCT SUMMARY I F(AV) Package Circuit configuration 95PF(R)...W DO-203AB (DO-5) 95 A DO-203AB (DO-5) Single
VNP5N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP5N07 70 V 0.2 Ω 5 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM
2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS
,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent
AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance
.OPERATING SUPPLY VOLTAGE UP TO 46 V
L298 DUAL FULL-BRIDGE DRIVER.OPERATING SUPPLY VOLTAGE UP TO 46 V TOTAL DC CURRENT UP TO 4 A. LOW SATURATION VOLTAGE OVERTEMPERATURE PROTECTION LOGICAL "0" INPUT VOLTAGE UP TO 1.5 V (HIGH NOISE IMMUNITY)
40 V, 200 ma NPN switching transistor
Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
IPS511/IPS511S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Data Sheet No.PD 6155 IPS511/IPS511S FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Short-circuit protection (current limit ) Active clamp E.S.D protection
IDB04E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 4 A V F 1.65 V T jmax 150 C
Fast Switching EmCon Diode Feature 12 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 12 V I F 4 V F 1.65 V T jmax
IDB45E60. Fast Switching EmCon Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C
Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM
UTC UNISONIC TECHNOLOGIES CO. LTD 1 LINEAR INTEGRATED CIRCUIT 7CH DARLINGTON SINK DRIVER
kω UTC ULN 7CH DARLINGTON SINK DRIVER DESCRIPTION The UTC ULN is high-voltage, high-current darlington drivers comprised of seven NPN darlingto pairs. All units feature integral clamp diodes for switching
IRF830. N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET
IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF830 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
Schottky Rectifier, 100 A
Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES
3.3 kv IGBT Modules. Takeharu Koga Yasuhiko Arita Takatoshi Kobayashi. 1. Introduction. 2. Specifications of 3.3 kv IGBT Module
3.3 kv IGBT Modules Takeharu Koga Yasuhiko Arita Takatoshi Kobayashi A B S T R A C T Fuji Electric has developed a 3.3 kv-1.2 ka IGBT module in response to market needs for inverters suitable for industrial
Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM - 600 V
TS985C6R Low-Loss Fast Recovery Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25 C unless otherwise specified.) Item Symbols Conditions Ratings Units Repetitive peak reverse voltage VRRM
Schottky Rectifier, 1 A
Schottky Rectifier, 1 A BQPbF FEATURES SMB Cathode Anode Small foot print, surface mountable Low forward voltage drop High frequency operation Available RoHS* COMPLIANT Guard ring for enhanced ruggedness
Features. Symbol JEDEC TO-220AB
Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD-20520 rev. M 07/04. Major Ratings and Characteristics. Description/ Features
0MQ00N SCHOTTKY RECTIFIER 2. Amp I F(AV) = 2.Amp V R = 00V Major Ratings and Characteristics Characteristics 0MQ00N Units I F DC 2. A V RRM 00 V I FSM @ tp = 5 µs sine 20 A V F @.5Apk, T =25 C 0.68 V J
TLP521 1,TLP521 2,TLP521 4
TLP2,TLP2 2,TLP2 4 TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP2,TLP2 2,TLP2 4 Programmable Controllers AC/DC Input Module Solid State Relay Unit in mm The TOSHIBA TLP2, 2 and 4 consist of a photo
Application Note AN-1070
Application Note AN-1070 Class D Audio Amplifier Performance Relationship to MOSFET Parameters By Jorge Cerezo, International Rectifier Table of Contents Page Abstract... 2 Introduction... 2 Key MOSFET
DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
DATA SHEET SILICON POWER TRANSISTOR 2SA1010 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for highvoltage high-speed switching,
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.0. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.
PD 9727 IRFP326PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors
TIP140, TIP141, TIP142, (); TIP145, TIP146, TIP147, () Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and low frequency switching applications. Features High DC
4N25 Phototransistor Optocoupler General Purpose Type
4N Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The 4N is an
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
PHOTOTRANSISTOR OPTOCOUPLERS
MCT2 MCT2E MCT20 MCT27 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor
PS11035 PS11035 PS11035. MITSUBISHI SEMICONDUCTOR <Application Specific Specific Intelligent Power Power Module>
MITSUBISHI SEMICONDUCTO FLT-BSE TYPE TYPE INSULTED TYPE TYPE INTEGTED FUNCTIONS ND FETUES Converter bridge for 3 phase C-to-DC power conversion.
5SDD 92Z0401. Housingless Welding Diode. I FAVm = 9 244 A I FSM = 60 000 A V TO = 0.780 V Applications r T = 0.031 m. Types.
SDD 92Z41 Housingless Welding Diode Properties SDD 92Z41 Key Parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 9 244 A I FSM = 6 A V TO =.78 V Applications
CoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product
IRFP450. N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET
IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRFP450 500 V < 0.4 Ω 14 A TYPICAL R DS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
TLP504A,TLP504A 2. Programmable Controllers AC / DC Input Module Solid State Relay. Pin Configurations (top view) 2002-09-25
TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP4A,TLP4A 2 TLP4A,TLP4A 2 Programmable Controllers AC / DC Input Module Solid State Relay Unit in mm The TOSHIBA TLP4A and TLP4A 2 consists of a photo
V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 973B IRFB432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low
IDB09E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 9 A V F 1.65 V T jmax 150 C
Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 9 V F 1.65 V T
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features
IDB30E120. Fast Switching EmCon Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C
Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Product Summary V RRM 1200 V I F 30 V F 1.65 V T
AN2011-05 Industrial IGBT Modules Explanation of Technical Information
AN2011-05 Industrial IGBT Modules IFAG IPC APS Edition 2011-09-30 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please! THE
SD4840/4841/4842/4843/4844
CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD4840/4841/4842/4843/4844 is a current mode PWM controller with low standby power and low start current for power switch. In standby
AUIRFR8405 AUIRFU8405
Features Advanced Process Technology New Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information
Green 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI 5 Product Summary I F V R V F MAX (V) I R MAX (ma) (V) (A) @ +25 C @ +25 C 1 5..71.35 Description and Applications This Schottky Barrier Rectifier
Transistor MOS. Ce Dossier comporte 10 pages comme suit : - Page 1 : Fonctionnement du transistor MOS
Transistor MOS Ce Dossier comporte 10 pages comme suit : - Page 1 : Fonctionnement du transistor MOS - Pages 2 à 9 : Documentation constructeur VNP49N04 NOTA : Tous les documents fournis seront remis à
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced
IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
2.5 A Output Current IGBT and MOSFET Driver
VO. A Output Current IGBT and MOSFET Driver 9 DESCRIPTION NC A C NC _ The VO consists of a LED optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for
Design and Applications of HCPL-3020 and HCPL-0302 Gate Drive Optocouplers
Design and Applications of HCPL-00 and HCPL-00 Gate Drive Optocouplers Application Note 00 Introduction The HCPL-00 (DIP-) and HCPL-00 (SO-) consist of GaAsP LED optically coupled to an integrated circuit
IRLR8729PbF IRLU8729PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
ST SiC MOSFET Evolution in Power Electronics
ST SiC MOSFET Evolution in Power Electronics Simone Buonomo Market & Application Development Manager Power Transistor Division simone.buonomo@st.com Power Transistor Division Agenda 2 SiC MOSFET Time Speaker
5A 3A. Symbol Parameter Value Unit
STP5NA50 STP5NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP5NA50 STP5NA50FI 500 V 500 V
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR
PD 967 IRFB465PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S V DSS HEXFET
2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish
N393, N393 is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Package May be Available. The GSuffix Denotes a PbFree Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter
Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS, Low Input Current
Optocoupler, Phototransistor Output, High Reliability, 53 V RMS, Low Input Current FEATURES A C 1 2 4 3 C E Operating temperature from -55 C to +11 C Good CTR linearity depending on forward current Isolation
Optocoupler, Phototransistor Output, AC Input
Optocoupler, Phototransistor Output, AC Input DESCRIPTION The SFH62A (DIP) and SFH626 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have
Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = 0 160 C f = 5 Hz, t p = 10 ms,
V RSM = 2800 V Rectifier Diode I F(AV)M = 6830 A I F(RMS) = 10730 A I FSM = 87 10 3 A V F0 = 0.8 V r F = 0.05 mw 5SDD 60N2800 Patented free-floating silicon technology Very low on-state losses Optimum
W/ C V GS Gate-to-Source Voltage ± 16 dv/dt Peak Diode Recovery e 21
PD 97369 IRLB43PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C
PD 9698A DIGITAL AUDIO MOSFET IRFB422PbF Features Key parameters optimized for ClassD audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency
Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C
2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High
N-channel enhancement mode TrenchMOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)
HFA08TB60. Ultrafast, Soft Recovery Diode HEXFRED TM TO-220AC. Bulletin PD -2.341 rev. A 11/00
Bulletin PD -.34 rev. A / HEXFRED TM HFA8TB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced
SPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V
SPW3N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances
STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
Y.LIN ELECTRONICS CO.,LTD.
Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact
Schottky Rectifier, 1.0 A
Schottky Rectifier, 1.0 A VS-BQ060PbF Vishay High Power Products FEATURES Small foot print, surface mountable Low forward voltage drop SMB Cathode Anode High frequency operation Guard ring for enhanced
APPLICATION AC100V~200V three-phase inverter drive for small power motor control.
MITSBISHI SEMIODTOR TYE TYE TEGRTED OWER FTIOS 4th generation (planar) IGBT inverter bridge for 3 phase D-to- power conversion. TEGRTED DRIE, ROTETIO D SYSTEM OTROL FTIOS
IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
Ultrafast, Soft Recovery Diode (N/C)
Bulletin PD -060 rev. C /00 HFA06TB0S.. Series HEXFRED TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits
TLP281,TLP281-4 TLP281,TLP281-4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE PC CARD MODEM(PCMCIA) Pin Configuration (top view) 2007-10-01
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR,-4,-4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE PC CARD MODEM(PCMCIA) Unit in mm and -4 is a very small and thin coupler, suitable for surface mount